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21. 发明授权

US06277738B1 Method of manufacturing a semiconductor device capable of reducing contact resistance 有权
标题翻译：制造能够降低接触电阻的半导体器件的方法
公开(公告)号：US06277738B1
公开(公告)日：2001-08-21
申请号：US09618271
申请日：2000-07-18
申请人： Hyung Bok Choi , Chang Seo Park , Hyeon Soo Kim
发明人： Hyung Bok Choi , Chang Seo Park , Hyeon Soo Kim
IPC分类号： H01L2144
CPC分类号： H01L21/76802 , H01L21/31116 , H01L21/32134 , H01L21/76838
摘要： The present invention relates to a method of manufacturing a semiconductor device, which is capable of effectively removing a WO3 film generated on a tungsten silicide during contact hole etch that opens a gate electrode including the tungsten silicide as its top film by selectively etching a interlayer insulating film. The WO3 film is removed by a washing process using an alkaline solution such as TMAH(tetra-methyl-ammonium-hydroxide) or NH4OH solution. The effective removal of the WO3 film reduces the contact resistance between a conductive material layer to be formed in the contact hole by a later process and the gate electrode, thereby improving the operative characteristics of the semiconductor device. TMAH solution used in the washing process has a high selectivity of WO3 film relative to a thermal oxide film or a BPSG film that is generally used as the interlayer insulating film. Thus, the present invention is capable of minimizing the damage of the side parts of the interlayer insulating film during the washing process after contact etching.
摘要翻译：本发明涉及一种制造半导体器件的方法，其能够有效地去除在接触孔蚀刻期间在硅化钨上产生的WO 3膜，其通过选择性地蚀刻层间绝缘来打开包括硅化钨作为其顶部膜的栅电极电影。通过使用碱性溶液如TMAH（四甲基氢氧化铵）或NH 4 OH溶液的洗涤方法除去WO 3膜。 WO3膜的有效去除减少了通过后续工艺在接触孔中形成的导电材料层与栅电极之间的接触电阻，从而提高了半导体器件的操作特性。在洗涤过程中使用的TMAH溶液相对于通常用作层间绝缘膜的热氧化膜或BPSG膜具有高选择性的WO 3膜。因此，本发明能够最小化接触蚀刻后的洗涤工序中的层间绝缘膜的侧面部分的损伤。

22. 发明授权

US09567515B2 White light emitting device and manufacturing method thereof 有权
标题翻译：白色发光元件及其制造方法
公开(公告)号：US09567515B2
公开(公告)日：2017-02-14
申请号：US11232966
申请日：2005-09-23
申请人： Sung Eun Lee , Hee Jung Kim , Chang Seo Park
发明人： Sung Eun Lee , Hee Jung Kim , Chang Seo Park
IPC分类号： H01L33/00 , C09K11/06 , C09K11/77 , H05B33/14 , H01L33/50
CPC分类号： C09K11/06 , C09K11/7734 , C09K11/7774 , C09K2211/1007 , C09K2211/1014 , C09K2211/1029 , C09K2211/1033 , C09K2211/1088 , C09K2211/1416 , C09K2211/1425 , C09K2211/1433 , C09K2211/1483 , H01L33/502 , H01L33/504 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H05B33/14 , Y02B20/181 , H01L2924/00014
摘要： A white light emitting device (LED) and a manufacturing method thereof wherein an LED coated with polymeric resin in which organic phosphors are solved dissolved and inorganic phosphors are dispersed creates a white LED, thereby producing an effect of excellent luminance and color coordinate without creating a compatibility problem with the polymeric resin. The present invention creates a white LED with a high luminance and a long service life using polymeric composition containing organic and inorganic phosphors, organic and inorganic combined phosphors and organosilicates, and an epoch making improvement in terms of luminance and credibility without additional process added to an existing element fabricating process, thereby enabling to achieve price competitiveness through cost reduction.
摘要翻译：一种白色发光器件（LED）及其制造方法，其中涂覆有有机磷光体溶解的聚合物树脂的LED和无机磷光体分散的LED产生白色LED，从而产生优异的亮度和色坐标的效果，而不产生与聚合物树脂的兼容性问题。本发明使用包含有机和无机磷光体，有机和无机组合荧光体和有机硅酸盐的聚合物组合物产生具有高亮度和长使用寿命的白色LED，并且在亮度和可靠性方面进行改进，而不需要额外加工现有元件制造工艺，从而通过降低成本实现价格竞争力。

23. 发明申请

US20130217204A1 METHODS FOR FABRICATING INTEGRATED CIRCUITS 有权
标题翻译：制作集成电路的方法
公开(公告)号：US20130217204A1
公开(公告)日：2013-08-22
申请号：US13399674
申请日：2012-02-17
申请人： Chang Seo Park
发明人： Chang Seo Park
IPC分类号： H01L21/762 , H01L21/20
CPC分类号： H01L21/823431 , H01L21/76232 , H01L21/76283 , H01L29/7853
摘要： Methods are provided for forming semiconductor devices. One method includes forming a first layer overlying a bulk semiconductor substrate. A second layer is formed overlying the first layer. A first plurality of trenches is etched into the first and second layers. The first plurality of trenches is filled to form a plurality of support structures. A second plurality of trenches is etched into the first and second layers. Portions of the second layer disposed between adjacent trenches of the first and second pluralities of trenches define a plurality of fins. The first layer is etched to form gap spaces between the bulk semiconductor substrate and the plurality of fins. The plurality of fins is supported in position adjacent to the gap spaces by the plurality of support structures. The gap spaces are filled with an insulating material.
摘要翻译：提供了形成半导体器件的方法。一种方法包括形成覆盖体半导体衬底的第一层。第二层形成在第一层上。第一多个沟槽被蚀刻到第一层和第二层中。第一多个沟槽被填充以形成多个支撑结构。第二多个沟槽被蚀刻到第一层和第二层中。设置在第一和第二多个沟槽的相邻沟槽之间的第二层的部分限定多个鳍。蚀刻第一层以在体半导体衬底和多个鳍之间形成间隙。多个翅片通过多个支撑结构支撑在与间隙空间相邻的位置。间隙空间填充绝缘材料。

24. 发明授权

US08431472B2 Semiconductor device fabrication using gate substitution 有权
标题翻译：使用栅极替代的半导体器件制造
公开(公告)号：US08431472B2
公开(公告)日：2013-04-30
申请号：US13174257
申请日：2011-06-30
申请人： Chang Seo Park
发明人： Chang Seo Park
IPC分类号： H01L21/44
CPC分类号： H01L29/66545 , H01L21/28088 , H01L21/823842
摘要： Methods is provided for forming a CMOS device. The method includes providing a substrate and depositing a gate stack on the substrate. The gate stack includes a gate dielectric and a dummy gate including polycrystalline silicon (polySi). The method also includes depositing a dielectric layer on the substrate after depositing the gate stack on the substrate. The method further includes substituting the dummy gate with a metal without first removing the dummy gate.
摘要翻译：提供了用于形成CMOS器件的方法。该方法包括提供衬底并在衬底上沉积栅叠层。栅极堆叠包括栅极电介质和包括多晶硅（polySi）的虚拟栅极。该方法还包括在将栅极堆叠沉积在衬底上之后，在衬底上沉积电介质层。该方法还包括在没有首先去除虚拟栅极的情况下用金属代替虚拟栅极。

25. 发明申请

US20130040450A1 Methods of Forming a Dielectric Cap Layer on a Metal Gate Structure 有权
标题翻译：在金属栅极结构上形成介电盖层的方法
公开(公告)号：US20130040450A1
公开(公告)日：2013-02-14
申请号：US13205050
申请日：2011-08-08
申请人： Ruilong Xie , Chang Seo Park , William James Taylor, JR. , John Iacoponi
发明人： Ruilong Xie , Chang Seo Park , William James Taylor, JR. , John Iacoponi
IPC分类号： H01L21/28
CPC分类号： H01L29/66545 , H01L21/28088 , H01L29/4966 , H01L29/51 , H01L29/6659
摘要： Disclosed herein are various methods of forming metal-containing insulating material regions on a metal layer of a gate structure of a semiconductor device. In one example, the method includes forming a gate structure of a transistor, the gate structure comprising at least a first metal layer, and forming a first metal-containing insulating material region in the first metal layer by performing a gas cluster ion beam process using to implant gas molecules into the first metal layer.
摘要翻译：本文公开了在半导体器件的栅极结构的金属层上形成含金属的绝缘材料区域的各种方法。在一个示例中，该方法包括形成晶体管的栅极结构，栅极结构至少包括第一金属层，并且通过执行气体簇离子束过程，在第一金属层中形成第一含金属绝缘材料区域将气体分子注入第一金属层。

26. 发明申请

US20120055177A1 Air conditioner and control method thereof 审中-公开
标题翻译：空调及其控制方法
公开(公告)号：US20120055177A1
公开(公告)日：2012-03-08
申请号：US13137585
申请日：2011-08-26
申请人： Sung Goo Kim , Jae Hyuk Oh , Seong Je Wu , Dong Woon Jeong , Yong Hyun Jeon , Chang Seo Park
发明人： Sung Goo Kim , Jae Hyuk Oh , Seong Je Wu , Dong Woon Jeong , Yong Hyun Jeon , Chang Seo Park
IPC分类号： F25B29/00 , F25B41/04
CPC分类号： F24F3/065 , F24D3/08 , F24D11/0214 , F24D15/04 , F24D17/02 , F24D19/1039 , F24D19/1054 , F24D19/1087 , F24D2200/123 , F24F11/83 , F24H6/00 , F25B13/00 , F25B2313/003 , F25B2313/0231 , F25B2313/0314 , F25B2600/2513 , F25B2700/04 , F25B2700/21152 , Y02B30/12
摘要： An air conditioner controls supply of refrigerant so that the refrigerant is first supplied to one or more indoor units in operation from an outdoor unit, and is then supplied to a hot water generator, thereby sufficiently supplying refrigerant to the indoor units in heating operation even when the hot water generator is operated.
摘要翻译：空调器控制制冷剂的供应，使得制冷剂首先从室外单元供应到一个或多个室内单元，然后被供应到热水发生器，由此即使当制冷剂热水发生器运行。

27. 发明申请

US20110203298A1 Heat pump system and control method thereof 审中-公开
标题翻译：热泵系统及其控制方法
公开(公告)号：US20110203298A1
公开(公告)日：2011-08-25
申请号：US12929574
申请日：2011-02-01
申请人： Sung Goo Kim , Jae Hyuk Oh , Dong Woon Jeong , Chang Seo Park
发明人： Sung Goo Kim , Jae Hyuk Oh , Dong Woon Jeong , Chang Seo Park
IPC分类号： F25B30/02 , F25B41/00 , F25B41/04
CPC分类号： F25B30/02 , F24H4/04 , F24H9/2021 , F25B2339/047 , F25B2600/0253 , F25B2600/2513 , F25B2700/21161 , Y02B30/741
摘要： A heat pump system, the operation of which is controlled using a temperature difference between a water inlet and a water outlet of a heat exchanger, exchanging heat between a refrigerant and water, and a control method thereof. The heat pump system includes temperature sensors installed on a water circulation pipe unit at water inlet and outlet sides of a heat exchanger, and heats a load to a set temperature by controlling a compressor or an expander according to a difference between temperatures sensed by the temperature sensors. Here, a temperature of water transmitted to the load is set to be greater than a target load temperature by a reference value, and if the temperature difference is smaller than a designated value, the operation of the heat pump system is stopped.
摘要翻译：一种热泵系统，其操作使用热交换器的进水口和出水口之间的温度差进行控制，在制冷剂和水之间进行热交换及其控制方法。热泵系统包括温度传感器，其安装在热交换器的进水口和出口侧的水循环管单元上，并且通过根据温度感测到的温度差来控制压缩机或膨胀机将负载加热到设定温度传感器。这里，传递到负载的水的温度被设定为大于目标负载温度的基准值，如果温度差小于指定值，则停止热泵系统的动作。

28. 发明申请

US20050123492A1 Composition for skin whitening containing lysophosphatidylethanolamine as an active ingredient 审中-公开
标题翻译：含有溶血磷脂酰乙醇胺作为活性成分的皮肤美白组合物
公开(公告)号：US20050123492A1
公开(公告)日：2005-06-09
申请号：US10503200
申请日：2003-01-29
申请人： Guk Hoon Chung , Young Sei Park , Wang Keun Choi , Chang Seo Park
发明人： Guk Hoon Chung , Young Sei Park , Wang Keun Choi , Chang Seo Park
IPC分类号： A61K8/00 , A61K8/30 , A61K8/49 , A61K8/55 , A61K8/58 , A61K8/96 , A61K8/97 , A61Q19/00 , A61Q19/02 , A61K7/135 , A61K7/06
CPC分类号： A61Q19/02 , A61K8/553
摘要： Lysophosphatidylethanolamine has skin whitening ability and thus a composition containing lysophosphatidylethanolamine as an active ingredient can be used to relieve hyperpigmentation or discoloration. The composition containing lysophosphatidylethanolamine can also induce moisturizing effect on skin, is very safe, and very stable.
摘要翻译：溶血磷脂酰乙醇胺具有皮肤美白能力，因此含有溶血磷脂酰乙醇胺作为活性成分的组合物可用于缓解色素沉着过度或变色。含有溶血磷脂酰乙醇胺的组合物也可以诱导对皮肤的保湿作用，非常安全，非常稳定。

29. 发明授权

US06638735B1 Plasmid for gene expression in pichia ciferrii and transformation method using the same 失效
标题翻译：在毕赤酵母中用于基因表达的质粒及使用其的转化方法
公开(公告)号：US06638735B1
公开(公告)日：2003-10-28
申请号：US09674826
申请日：2001-07-17
申请人： Sang Ki Rhee , Jung Hoon Bae , Eui Sung Choi , Jung Hoon Sohn , Hyun Ah Kang , Chang Seo Park
发明人： Sang Ki Rhee , Jung Hoon Bae , Eui Sung Choi , Jung Hoon Sohn , Hyun Ah Kang , Chang Seo Park
IPC分类号： C12P2106
CPC分类号： C07K14/39
摘要： Expression cassettes for transforming Pichia ciferrii and their use are disclosed. The present invention relates to expression cassettes containing Pichia ciferrii ribosomal DNA fragment, CYHr gene resistant to cycloheximide, and a desired gene. Expression cassette further comprising Pichia ciferrii GAPDH promoter gene which allows an increase in the expression of the desired gene also provided. Moreover, the present invention provides a process for producing tetraacetyl phytosphingosine using transformed Pichia ciferrii cells with the expression cassettes in a higher yield.
摘要翻译：公开了用于转化毕赤酵母的表达盒及其用途。本发明涉及含有毕赤酵母核糖体DNA片段，对放线菌酮具有抗性的CYHr基因和所需基因的表达盒。进一步包含允许增加所需基因表达的毕赤酵母GAPDH启动子基因的表达盒也被提供。此外，本发明提供了使用转化的毕赤酵母细胞以更高产率用表达盒生产四乙酰植物鞘氨醇的方法。

30. 发明授权

US6114241A Method of manufacturing a semiconductor device capable of reducing contact resistance 有权
标题翻译：制造能够降低接触电阻的半导体器件的方法
公开(公告)号：US6114241A
公开(公告)日：2000-09-05
申请号：US338525
申请日：1999-06-23
申请人： Hyung Bok Choi , Chang Seo Park , Hyeon Soo Kim
发明人： Hyung Bok Choi , Chang Seo Park , Hyeon Soo Kim
IPC分类号： H01L21/768 , H01L21/44
CPC分类号： H01L21/76814
摘要： The present invention relates to a method of manufacturing a semiconductor device, which is capable of effectively removing a WO.sub.3 film generated on a tungsten silicide during contact hole etch that opens a gate electrode including the tungsten silicide as its top film by selectively etching a interlayer insulating film. The WO.sub.3 film is removed by a washing process using an alkaline solution such as TMAH(tetra-methyl-ammonium-hydroxide) or NH.sub.4 OH solution. The effective removal of the WO.sub.3 film reduces the contact resistance between a conductive material layer to be formed in he contact hole by a later process and the gate electrode, thereby improving the operative characteristics of the semiconductor device. TMAH solution used in the washing process has a high selectivity of WO.sub.3 film relative to a thermal oxide film or a BPSG film that is generally used as the interlayer insulating film. Thus, the present invention is capable of minimizing the damage of the side parts of the interlayer insulating film during the washing process after contact etching.
摘要翻译：本发明涉及一种制造半导体器件的方法，该方法能够有效地除去在接触孔蚀刻期间在硅化钨上产生的WO 3膜，其通过选择性地蚀刻层间绝缘体来打开包括硅化钨作为其顶部膜的栅电极电影。通过使用碱性溶液如TMAH（四甲基氢氧化铵）或NH 4 OH溶液的洗涤方法除去WO 3膜。 WO3膜的有效去除通过后续工艺在接触孔中形成的导电材料层与栅电极之间的接触电阻降低，从而提高半导体器件的操作特性。在洗涤过程中使用的TMAH溶液相对于通常用作层间绝缘膜的热氧化膜或BPSG膜具有高选择性的WO 3膜。因此，本发明能够最小化接触蚀刻后的洗涤工序中的层间绝缘膜的侧面部分的损伤。

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