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21. 发明授权

US5625526A Electrostatic chuck 失效
标题翻译：静电吸盘
公开(公告)号：US5625526A
公开(公告)日：1997-04-29
申请号：US252213
申请日：1994-06-01
申请人： Masahide Watanabe , Masami Kubota , Shiro Koyama , Kenji Ishikawa , Kouichi Kazama , Mitsuaki Komino , Takanori Sakurai
发明人： Masahide Watanabe , Masami Kubota , Shiro Koyama , Kenji Ishikawa , Kouichi Kazama , Mitsuaki Komino , Takanori Sakurai
IPC分类号： G03F7/20 , H01L21/683 , H02N13/00
CPC分类号： G03F7/707 , G03F7/70708 , H01L21/6831 , H01L21/6833 , H02N13/00
摘要： An electrostatic chuck of this invention includes a conductive film, an insulating coat formed on a susceptor to cover the conductive film, and a feeder circuit for applying a voltage to the conductive film to cause the insulating coat to generate an electrostatic attractive force. The feeder circuit includes a connecting conductor replacing a portion of the insulating coat to be electrically connected to the conductive film, a first feeder pin extending through the susceptor from its front surface side to its rear surface side and having one end portion electrically connected to the connecting conductor, an insulating member for insulating the first feeder pin from the susceptor, a second feeder pin having one end portion pressed against the other end portion of the first feeder pin to be electrically connected to the first feeder pin, and a power supply electrically connected to the second feeder pin.
摘要翻译：本发明的静电卡盘包括导电膜，形成在基座上以覆盖导电膜的绝缘涂层，以及用于向导电膜施加电压以使绝缘涂层产生静电引力的馈电电路。供电电路包括：替代与导电膜电连接的绝缘涂层的一部分的连接导体;延伸穿过基座从其前表面侧到其后表面侧的第一馈电引脚，并且一端部电连接到连接导体，用于使所述第一馈电销与所述基座绝缘的绝缘构件;第二馈电销，其具有压靠所述第一馈电线的另一端部的一端部，以与所述第一馈电线电连接;以及电源，连接到第二个馈线。

22. 发明授权

US5581874A Method of forming a bonding portion 失效
标题翻译：形成接合部的方法
公开(公告)号：US5581874A
公开(公告)日：1996-12-10
申请号：US410736
申请日：1995-03-27
申请人： Makoto Aoki , Mitsuaki Komino , Masayuki Kitamura
发明人： Makoto Aoki , Mitsuaki Komino , Masayuki Kitamura
IPC分类号： H01L21/00 , H01R43/00
CPC分类号： H01L21/67069 , Y10T279/23 , Y10T29/49117 , Y10T29/49885
摘要： A process apparatus comprises a process chamber containing a semiconductor wafer, a gas being able to be supplied to and exhausted from the process chamber, a support table for supporting an object to be processed, which is contained in the process chamber, a gas supply system for supplying the gas into the process chamber, and a gas exhaust system for exhausting the gas from the process chamber. An inner wall of the process chamber and the support table are formed of an aluminum-based material, and the surfaces of these are brought into contact with a fluorine-containing gas, thereby coating the surfaces with AlF.sub.3.
摘要翻译：一种处理装置，包括一个包含半导体晶片的处理室，能够从该处理室供应和排出的气体;一个用于支撑被处理室内容纳的处理室的支撑台，一个供气系统用于将气体供应到处理室中，以及用于从处理室排出气体的排气系统。处理室的内壁和支撑台由铝基材料形成，其表面与含氟气体接触，从而用AlF 3涂覆表面。

23. 发明申请

US20100000469A1 DEPOSITION APPARATUS FOR ORGANIC EL AND EVAPORATING APPARATUS 审中-公开
标题翻译：有机EL和蒸发装置的沉积装置
公开(公告)号：US20100000469A1
公开(公告)日：2010-01-07
申请号：US12494453
申请日：2009-06-30
申请人： Yasushi Yagi , Shingo Watanabe , Yuji Ono , Hiroshi Kaneko , Koyu Hasegawa , Mitsuaki Komino
发明人： Yasushi Yagi , Shingo Watanabe , Yuji Ono , Hiroshi Kaneko , Koyu Hasegawa , Mitsuaki Komino
IPC分类号： C23C16/54
CPC分类号： C23C14/26 , C23C14/243 , H01L51/001
摘要： Provided is a deposition apparatus for organic EL capable of allowing vapor of a film forming material to be vapor deposited on a target object to be uniformly heated. A deposition apparatus, which performs a film forming process by vapor depositing a film forming material on a target object in a depressurized processing chamber, includes an evaporating head having a vapor discharge opening, disposed in the processing chamber, for discharging vapor of the film forming material. Inside the evaporating head, provided is a heater receiving member which is sealed with respect to an inside of the processing chamber, and installed is a communication path which allows the heater receiving member to communicate with an outside of the processing chamber. A power supply line for a heater received in the heater receiving member is disposed in the communication path and extended to the outside of the processing chamber.
摘要翻译：本发明提供一种能够使成膜材料的蒸气气相沉积在目标物体上以均匀加热的有机EL的沉积装置。通过在减压处理室中对目标物体上的成膜材料进行气相沉积而进行成膜处理的沉积装置包括具有蒸气排出口的蒸发头，设置在处理室中，用于排出成膜用蒸气材料。在蒸发头内部设置有相对于处理室的内部密封的加热器接收构件，并且设置有允许加热器接收构件与处理室的外部连通的连通路径。用于接收在加热器接收构件中的加热器的电源线设置在连通路径中并延伸到处理室的外部。

24. 发明申请

US20090179385A1 MAGNETIC FLUID SEAL DEVICE 审中-公开
标题翻译：磁流体密封装置
公开(公告)号：US20090179385A1
公开(公告)日：2009-07-16
申请号：US12295515
申请日：2007-03-20
申请人： Mitsuaki Komino , Shigeki Honda
发明人： Mitsuaki Komino , Shigeki Honda
IPC分类号： F16J15/43
CPC分类号： F16J15/43
摘要： The present invention provides a magnetic fluid seal device which enables to avoid the increase of the torque due to the aggregation of the solute of the magnetic fluid or the condition in which it is unable to start. According to the magnetic fluid seal device of the present invention, the hearer 151 is buried in the area where the magnetic fluid seal portion 140 is position inside the shaft 110. The torque meter 171 detects the rotation torque and the starting torque of the shaft 110, and when it is larger than the standard value, the magnetic fluid seal portion 140 is heated via the heater 151 inside the shaft 110. Thereby, the temperature of the magnetic fluid 146 and 147 rises, the solute of the magnetic fluid 146 and 147 is dispersed which lowers the viscosity thereof, and the rotation torque and the starting torque of the shaft 110 is lowered.
摘要翻译：本发明提供一种磁流体密封装置，其能够避免由于磁性流体的溶质的聚集引起的扭矩的增加或其不能启动的状态。根据本发明的磁性流体密封装置，听筒151被埋在磁性流体密封部分140位于轴110内部的区域中。扭矩计171检测轴110的旋转扭矩和起动扭矩，并且当其大于标准值时，磁性流体密封部分140经由轴110内部的加热器151被加热。由此，磁性流体146和147的温度升高，磁性流体146和147的溶质分散，降低其粘度，并且轴110的旋转扭矩和起动扭矩降低。

25. 发明授权

US6167323A Method and system for controlling gas system 失效
标题翻译：控制气体系统的方法和系统
公开(公告)号：US6167323A
公开(公告)日：2000-12-26
申请号：US130668
申请日：1998-08-07
申请人： Mitsuaki Komino , Osamu Uchisawa , Yasuhiro Chiba
发明人： Mitsuaki Komino , Osamu Uchisawa , Yasuhiro Chiba
IPC分类号： C23C16/455 , C23C16/52 , H01L21/00 , G05D23/00
CPC分类号： H01L21/67248 , C23C16/455 , C23C16/45561 , C23C16/52 , H01L21/67017
摘要： Flow sensors 41 and 42 for detecting a flow load including the presence of a flow of gas are provided in supply lines 2a through 2d for supplying a given gas into a treatment chamber 6. A CPU 40 is provided for previously storing control parameters corresponding to the presence of a flow of gas. The presence of a flow of gas or a flow of IPA is detected by the flow sensors 41, 42 or an IPA supply pump 43, and detected signals are transmitted to the CPU 40. On the basis of a control signal outputted from the CPU 40, a cartridge heater 14, inner and outer tube heaters 25 and 26 and an insulation heater 52 are controlled. Thus, a control parameter adopted in accordance with the presence of a flow of gas to be used is determined, so that the control parameter previously stored in a data table 100 is selected in accordance with a control mode to control the temperature or pressure of the gas.
摘要翻译：用于检测包括气流存在的流量负载的流量传感器41和42设置在用于将给定气体供应到处理室6中的供应管线2a至2d中。CPU 40用于预先存储对应于存在气体流。通过流量传感器41,42或IPA供给泵43检测气体流动或IPA流的存在，并且将检测信号传送到CPU 40.基于从CPU 40输出的控制信号，盒式加热器14，内管加热器25和外管加热器26以及绝缘加热器52被控制。因此，确定根据所使用的气体流的存在而采用的控制参数，使得根据控制模式选择先前存储在数据表100中的控制参数，以控制温度或压力加油站。

26. 发明授权

US06157774A Vapor generating method and apparatus using same 失效
标题翻译：蒸汽发生方法及其使用方法
公开(公告)号：US06157774A
公开(公告)日：2000-12-05
申请号：US79767
申请日：1998-05-15
申请人： Mitsuaki Komino , Osamu Uchisawa
发明人： Mitsuaki Komino , Osamu Uchisawa
IPC分类号： B01F3/04 , B01F5/04 , B01F15/00 , B01F15/06 , C23C16/448 , H01L21/00 , A01G13/06 , F23D11/10
CPC分类号： H01L21/67017 , B01F15/065 , B01F15/066 , B01F3/04049 , B01F5/0415 , B01F5/0416 , B01F5/0426 , B01F5/0428 , B01F5/0471 , C23C16/4481 , C23C16/4486 , B01F15/00123 , B01F2015/062
摘要： A vapor generating apparatus comprises: a convergent-divergent nozzle 50 having an inlet port 50a and an outlet port 50a for a gas for a vapor medium, the convergent-divergent nozzle 50 comprising a convergent nozzle portion 51a, which is formed so as to be tapered and narrowed from the inlet port 50a toward the outlet port 50b, and a divergent nozzle portion 51c, which is formed so as to be expanded from the convergent nozzle portion 51a toward the outlet port 50b; and a supply port 54 for a liquid to be evaporated, the supply port 54 being open to the divergent nozzle portion 51c of the convergent-divergent nozzle 50. Thus, it is possible to easily produce a gas using a smaller number of control factors, and it is possible to increase the amount of produced gas and decrease the vapor generating time.
摘要翻译：蒸汽发生装置包括：会聚扩散喷嘴50，其具有用于蒸气介质的气体的入口端口50a和出口端口50a，收敛扩散喷嘴50包括会聚喷嘴部分51a，其形成为从入口端口50a朝向出口端口50b呈锥形和变窄;以及扩散喷嘴部分51c，其形成为从会聚喷嘴部分51a朝向出口端口50b扩展; 以及用于待蒸发的液体的供给口54，供给口54对会聚扩散喷嘴50的扩散喷嘴部51c开口。因此，可以容易地使用较少数量的控制因素产生气体，并且可以增加产生的气体量并降低蒸气产生时间。

27. 发明授权

US6106737A Plasma treatment method utilizing an amplitude-modulated high frequency power 失效
标题翻译：使用调幅高频功率的等离子体处理方法
公开(公告)号：US6106737A
公开(公告)日：2000-08-22
申请号：US94451
申请日：1998-06-10
申请人： Masayuki Tomoyasu , Akira Koshiishi , Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Yukio Naito , Kazuya Nagaseki , Keizo Hirose , Mitsuaki Komino , Hiroto Takenaka , Hiroshi Nishikawa , Yoshio Sakamoto
发明人： Masayuki Tomoyasu , Akira Koshiishi , Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Yukio Naito , Kazuya Nagaseki , Keizo Hirose , Mitsuaki Komino , Hiroto Takenaka , Hiroshi Nishikawa , Yoshio Sakamoto
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/509 , C23C16/517 , H01J37/32
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/4407 , C23C16/4483 , C23C16/4485 , C23C16/4557 , C23C16/5096 , C23C16/517 , H01J37/32082 , H01J37/32146 , H01J37/32155 , H01J37/32165 , H01J37/3244 , H01J37/32935 , H01J37/32963 , Y10S156/916
摘要： A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f.sub.1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f.sub.2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.
摘要翻译：一种等离子体处理方法，包括：排出处理室以对处理室进行减压，将晶片安装在可变装置上，通过淋浴电极向晶片供应处理气体，施加高频功率，该频率的第一频率f1低于固有的较低离子转移频率的工艺气体，以及施加高频功率，其具有高于处理气体的固有上部离子转移频率的第二频率f2，由此在处理室中产生等离子体并被激活物种影响晶圆。

28. 发明授权

US5660740A Treatment apparatus control method 失效
标题翻译：治疗仪器控制方法
公开(公告)号：US5660740A
公开(公告)日：1997-08-26
申请号：US589041
申请日：1996-01-19
申请人： Mitsuaki Komino
发明人： Mitsuaki Komino
IPC分类号： C23C14/54 , C23C14/56 , C23C16/44 , C23C16/46 , C23C14/34 , C23C16/00 , H01L21/306
CPC分类号： C23C16/463 , C23C14/541 , C23C14/564 , C23C16/4401 , C23C16/46 , C23C16/466 , H01J2237/2001
摘要： This invention provides a method of controlling a treatment apparatus including a treatment chamber adjustable to a desired reduced-pressure atmosphere, a mounting table arranged in the treatment chamber to mount an object to be treated, a cooling medium container provided in the mounting table, and a cooling medium supply system for supplying a cooling medium to the cooling medium container and discharging the cooling medium from the cooling medium container. The method includes the steps of treating the object to be treated while decreasing the temperature of the object to be treated by cooling the mounting table by using heat transfer from the cooling medium supplied to the cooling medium container by the cooling medium supply system, and heating the vicinity of a very small gap which traps moisture in a member constituting the treatment apparatus, when the internal temperature of the treatment apparatus is to be raised.
摘要翻译：本发明提供了一种控制处理装置的方法，所述处理装置包括可调节到期望的减压气氛的处理室，布置在处理室中的安装台以安装待处理物体，设置在安装台中的冷却介质容器，以及用于向冷却介质容器供给冷却介质并从冷却介质容器排出冷却介质的冷却介质供给系统。该方法包括以下步骤：通过使用由冷却介质供给系统供给到冷却介质容器的冷却介质进行热传递，通过冷却安装台来降低待处理物体的温度来处理待处理物体，当要提高处理装置的内部温度时，在构成处理装置的构件中捕获水分的非常小的间隙附近。

29. 发明授权

US5382311A Stage having electrostatic chuck and plasma processing apparatus using same 失效
标题翻译：具有静电卡盘和使用其的等离子体处理装置的阶段
公开(公告)号：US5382311A
公开(公告)日：1995-01-17
申请号：US168367
申请日：1993-12-17
申请人： Kenji Ishikawa , Mitsuaki Komino , Tadashi Mitui , Teruo Iwata , Izumi Arai , Yoshifumi Tahara
发明人： Kenji Ishikawa , Mitsuaki Komino , Tadashi Mitui , Teruo Iwata , Izumi Arai , Yoshifumi Tahara
IPC分类号： C23C16/458 , H01L21/683 , H01L21/00
CPC分类号： C23C16/466 , C23C16/4586 , H01L21/6831
摘要： A plasma etching apparatus for a semiconductor wafer includes a susceptor arranged in a vacuum process chamber. A groove for flowing a heat transfer gas is formed in the mounting surface of the susceptor. The groove includes an annular groove portion formed along the peripheral edge of the mounting surface, and a gas path vertically extending through the susceptor is connected to the annular groove portion. A sheet-like electrostatic chuck is airtightly adhered to the mounting surface of the susceptor to cover the groove. A plurality of through holes are formed in the electrostatic chuck, and these holes are arranged along an above the groove. The heat transfer gas is supplied between the electrostatic chuck and the semiconductor wafer through the gas path, the groove, and the through holes. The heat transfer gas contributes to transfer of cold from a liquid nitrogen source arranged under the susceptor to the wafer.
摘要翻译：用于半导体晶片的等离子体蚀刻装置包括设置在真空处理室中的基座。在基座的安装面形成有用于使传热气体流动的槽。该槽包括沿着安装表面的周边边缘形成的环形槽部分，并且垂直延伸穿过基座的气体路径连接到环形槽部分。片状静电卡盘气密地粘附在基座的安装面上以覆盖凹槽。在静电卡盘中形成有多个通孔，这些孔沿着槽的上方配置。传热气体通过气路，凹槽和通孔供应在静电卡盘和半导体晶片之间。传热气体有助于从布置在基座下方的液氮源将冷转移到晶片。

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