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    • 2. 发明授权
    • Method of controlling temperature of susceptor
    • 感受器温度控制方法
    • US5567267A
    • 1996-10-22
    • US154451
    • 1993-11-19
    • Kouichi KazamaMitsuaki KominoKenji IshikawaYoichi Ueda
    • Kouichi KazamaMitsuaki KominoKenji IshikawaYoichi Ueda
    • H01J37/32C23F1/02
    • H01J37/32H01J2237/2001
    • A susceptor of a plasma etching apparatus is arranged on a heater fixing frame incorporating a heater. The fixing frame is arranged on a cooling block containing liquid nitrogen. A boundary clearance is formed between the fixed frame and the cooling block and on a heat transfer path. A method of controlling the temperature of the susceptor includes an initialization mode, an idle mode following the initialization mode, process and maintenance modes selectively following the idle mode. The initialization mode includes the steps of filling the boundary clearance with a heat transfer gas and observing a change in temperature of the susceptor caused by cold transferred from the cooling block. The idle mode is executed after the temperature of the susceptor reaches a predetermined temperature. The idle mode includes the step of exhausting the boundary clearance to set it in a vacuum state to sever the heat transfer path. The process mode includes the steps of filling the boundary clearance with the heat transfer gas and processing a semiconductor wafer on the susceptor. The maintenance mode includes the steps of keeping the vacuum state of the boundary clearance to sever the heat transfer path and performing maintenance.
    • 等离子体蚀刻装置的基座设置在加热器的加热器固定框架上。 固定框架设置在含有液氮的冷却块上。 在固定框架和冷却块之间以及传热路径上形成边界间隙。 控制基座的温度的方法包括初始化模式,初始化模式之后的空闲模式,选择性地跟随空闲模式的处理和维护模式。 初始化模式包括用传热气体填充边界间隙并观察由冷却块传递的冷引起的基座的温度变化的步骤。 在基座的温度达到预定温度之后执行空闲模式。 空闲模式包括排出边界间隙以将其设置在真空状态以切断传热路径的步骤。 工艺模式包括以下步骤:用传热气体填充边界间隙并处理基座上的半导体晶片。 维护模式包括保持边界空隙的真空状态以切断传热路径并执行维护的步骤。