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21. 发明申请

US20050143982A1 Method and system for accelerating power complementary cumulative distribution function measurements 失效
标题翻译：加速功率互补累积分布函数测量的方法和系统
公开(公告)号：US20050143982A1
公开(公告)日：2005-06-30
申请号：US10737050
申请日：2003-12-15
申请人： Yi He , Gerald Ringel , Howard Hilton , Brian Barton
发明人： Yi He , Gerald Ringel , Howard Hilton , Brian Barton
IPC分类号： G06F15/00 , G06F17/18
CPC分类号： G06F17/18 , G01R21/133
摘要： Data values representing the (I2+Q2) values are converted to floating-point representations and a histogram of the floating-point numbers is generated. The count for each histogram bin in the histogram is stored in a memory. Each floating-point number acts as an address for a corresponding histogram bin in the memory. The accumulated counts in the histogram bins are then grouped into a desired number of CCDF bins, and the CCDF curve is derived from the histogram data. Grouping the histogram bins into the CCDF bins may include combining one or more histogram bins into a single CCDF bin. Linear interpolation is used to divide a count value in a histogram bin between two CCDF bins when the histogram bin does not align with a single CCDF bin.
摘要翻译：表示（I＆lt; 2＆gt; +＆lt; 2＆gt; 2）值的数据值被转换为浮点表示，并且生成浮点数的直方图。直方图中每个直方图单元格的计数都存储在存储器中。每个浮点数作为存储器中对应的直方图bin的地址。然后将直方图区块中的累积计数分组为所需数量的CCDF仓，并从直方图数据中导出CCDF曲线。将直方图箱分组到CCDF箱中可以包括将一个或多个直方图箱组合成单个CCDF箱。线性插值用于在直方图单元不与单个CCDF模块对齐时，在两个CCDF模块之间的直方图存储区中计算计数值。

22. 发明授权

US06795342B1 System for programming a non-volatile memory cell 有权
标题翻译：用于编程非易失性存储单元的系统
公开(公告)号：US06795342B1
公开(公告)日：2004-09-21
申请号：US10307667
申请日：2002-12-02
申请人： Yi He , Zhizheng Liu , Mark W. Randolph , Sameer S. Haddad
发明人： Yi He , Zhizheng Liu , Mark W. Randolph , Sameer S. Haddad
IPC分类号： G11C1604
CPC分类号： G11C16/10 , G11C16/0475 , G11C16/0491
摘要： A system for programming a charge stored on a charge storage region of a dielectric charge trapping layer of a first dual bit dielectric memory cell within an array of dual bit dielectric memory cells comprises applying a positive source programming bias to a first bit line that is the source of the selected memory cell while applying a drain programming voltage to a second bit line that forms a drain junction with the channel region and while applying a positive voltage to a selected word line. The source voltage may be applied by coupling the source bit line to a voltage divider or by coupling the source bit line to a resistor which in turn is coupled to a ground. A negative programming bias may also be applied to the substrate and to unselected word lines.
摘要翻译：一种用于对存储在双位介质存储器单元阵列内的第一双位介质存储单元的介电电荷俘获层的电荷存储区域上的电荷进行编程的系统包括将正源编程偏置施加到第一位线同时将漏极编程电压施加到与沟道区形成漏极结的第二位线以及向所选择的字线施加正电压的所选存储单元的源极。可以通过将源极线耦合到分压器或通过将源极线耦合到电阻器来施加源极电压，电阻器又连接到地电位器。负编程偏置也可以应用于衬底和未选择的字线。

23. 发明授权

US06436768B1 Source drain implant during ONO formation for improved isolation of SONOS devices 有权
标题翻译：在ONO形成期间的源极漏极注入，以改善SONOS器件的隔离
公开(公告)号：US06436768B1
公开(公告)日：2002-08-20
申请号：US09893279
申请日：2001-06-27
申请人： Jean Yee-Mei Yang , Mark T. Ramsbey , Emmanuil Manos Lingunis , Yider Wu , Tazrien Kamal , Yi He , Edward Hsia , Hidehiko Shiraiwa
发明人： Jean Yee-Mei Yang , Mark T. Ramsbey , Emmanuil Manos Lingunis , Yider Wu , Tazrien Kamal , Yi He , Edward Hsia , Hidehiko Shiraiwa
IPC分类号： H01L21336
CPC分类号： H01L21/2652 , H01L21/2658 , H01L27/11568 , H01L29/66833
摘要： One aspect of the present invention relates to a method of forming a SONOS type non-volatile semiconductor memory device, involving forming a first layer of a charge trapping dielectric on a semiconductor substrate; forming a second layer of the charge trapping dielectric over the first layer of the charge trapping dielectric on the semiconductor substrate; optionally at least partially forming a third layer of the charge trapping dielectric over the second layer of the charge trapping dielectric on the semiconductor substrate; optionally removing the third layer of the charge trapping dielectric; forming a source/drain mask over the charge trapping dielectric; implanting a source/drain implant through the charge trapping dielectric into the semiconductor substrate; optionally removing the third layer of the charge trapping dielectric; and one of forming the third layer of the charge trapping dielectric over the second layer of the charge trapping dielectric on the semiconductor substrate, reforming the third layer of the charge trapping dielectric over the second layer of the charge trapping dielectric on the semiconductor substrate, or forming additional material over the third layer of the charge trapping dielectric.
摘要翻译：本发明的一个方面涉及一种形成SONOS型非易失性半导体存储器件的方法，包括在半导体衬底上形成电荷俘获电介质的第一层; 在所述半导体衬底上的所述电荷俘获电介质的所述第一层上形成所述电荷俘获电介质的第二层; 可选地至少部分地在所述半导体衬底上的所述电荷俘获电介质的所述第二层上形成所述电荷俘获电介质的第三层; 任选地去除电荷俘获电介质的第三层; 在电荷俘获电介质上形成源极/漏极掩模; 将源极/漏极注入物通过电荷俘获电介质注入到半导体衬底中; 任选地去除电荷俘获电介质的第三层; 以及在半导体衬底上的电荷俘获电介质的第二层上形成电荷俘获电介质的第三层之一，在半导体衬底上的电荷俘获电介质的第二层上重整第三层电荷俘获电介质，或在电荷俘获电介质的第三层上形成附加材料。

24. 发明授权

US08975685B2 N-channel multi-time programmable memory devices 有权
标题翻译： N通道多时间可编程存储器件
公开(公告)号：US08975685B2
公开(公告)日：2015-03-10
申请号：US13600792
申请日：2012-08-31
申请人： Yi He , Xiang Lu , Albert Bergemont
发明人： Yi He , Xiang Lu , Albert Bergemont
IPC分类号： H01L29/788
CPC分类号： G11C16/0408 , G11C2216/10
摘要： N-channel multi-time programmable memory devices having an N-conductivity type substrate, first and second P-conductivity type wells in the N-conductivity type substrate, N-conductivity type source and drain regions formed in the first P-conductivity type well, the source and drain regions being separated by a channel region, an oxide layer over the N-conductivity type substrate; and a floating gate extending over the channel region and over the second P-conductivity type well in the N-conductivity type substrate, the multi-time programmable memory cell being programmable by hot electron injection and erasable by hot hole injection.
摘要翻译：具有N-导电类型衬底，N导电类型衬底中的第一和第二P导电类型阱的N沟道多时间可编程存储器件，形成在第一P导电型阱中的N导电型源极和漏极区源极和漏极区域被沟道区域分隔，N导电型衬底上的氧化物层; 以及在N导电类型衬底中在沟道区域上延伸超过第二P导电类型的浮栅，多时间可编程存储单元可通过热电子注入进行编程，并可通过热空穴注入进行擦除。

25. 发明授权

US08710122B2 Halogen-free flame retardants for epoxy resin systems 有权
标题翻译：环氧树脂体系的无卤阻燃剂
公开(公告)号：US08710122B2
公开(公告)日：2014-04-29
申请号：US13128846
申请日：2009-11-24
申请人： Richard B. Ross , Yi He , Lisa S. Lim , Haohao Lin , Eumi Pyun
发明人： Richard B. Ross , Yi He , Lisa S. Lim , Haohao Lin , Eumi Pyun
IPC分类号： C08K5/521 , C08L63/00
CPC分类号： C08K5/521 , C08K3/32 , C08L63/00 , C09D5/18 , C09D163/00 , C08L2666/04
摘要： This disclosure relates to flame retardants that are useful for epoxy resin systems. Coating compositions and methods are provided the include an epoxy resin and a phosphate-containing flame retardant wherein the phosphate-containing flame retardant is selected from Group 1 metallic salts of a phosphate of a saccharide, Group 2 salts of a glycerophosphate, and Group 1 metallic salts of a polyphosphate. The provided flame retardants have low toxicity and are friendly to the environment.
摘要翻译：本发明涉及可用于环氧树脂体系的阻燃剂。提供了包括环氧树脂和含磷酸盐阻燃剂的涂料组合物和方法，其中含磷酸盐阻燃剂选自糖类磷酸盐的第1族金属盐，甘油磷酸盐的第2族盐和第1族金属多磷酸盐。所提供的阻燃剂具有低毒性，对环境友好。

26. 发明申请

US20130164709A1 SUBSTITUTED SACCHARIDE COMPOUNDS AND DENTAL COMPOSITIONS 有权
标题翻译：替代化合物和牙科成分
公开(公告)号：US20130164709A1
公开(公告)日：2013-06-27
申请号：US13813673
申请日：2011-08-19
申请人： Jie Yang , Sumita B. Mitra , Yi He , Brian A. Shukla , Naimul Karim , Afshin Falsafi , Richard B. Ross , Paul R. Klaiber , George W. Griesgraber
发明人： Jie Yang , Sumita B. Mitra , Yi He , Brian A. Shukla , Naimul Karim , Afshin Falsafi , Richard B. Ross , Paul R. Klaiber , George W. Griesgraber
IPC分类号： A61K6/00 , C07C271/16 , C07C233/20 , A61C7/30 , A61C5/10 , A61C13/271 , A61C7/28 , A61C8/00 , C07H15/12 , C07F9/09
CPC分类号： A61K6/0029 , A61K6/0023 , A61K6/083 , C07H13/12 , C08L33/24 , C08L33/10
摘要： Substituted saccharide compounds, dental compositions comprising substituted saccharide compounds, and methods of using dental compositions are described. In one embodiment, the substituted saccharide amide compound comprises a hydrophobic group and at least one free-radically polymerizable group with the proviso that the hydrophobic group is not bonded to the ethylenically unsaturated carbon atom of the free-radically polymerizable group. The hydrophobic group is typically bonded to a nitrogen atom of a saccharide amine residue or a carbonyl moiety of saccharide amide residue.
摘要翻译：描述了取代的糖类化合物，包含取代的糖类化合物的牙科组合物和使用牙科用组合物的方法。在一个实施方案中，取代的糖酰胺化合物包含疏水基团和至少一个可自由基聚合的基团，条件是疏水基团不与可自由基聚合基团的烯属不饱和碳原子键合。疏水基团通常键合到糖胺残基的氮原子或糖酰胺残基的羰基部分。

27. 发明授权

US08456868B2 Controller for a resonant switched-mode power converter 有权
标题翻译：谐振开关型功率转换器的控制器
公开(公告)号：US08456868B2
公开(公告)日：2013-06-04
申请号：US12771467
申请日：2010-04-30
申请人： Yi He , Tuck Meng Chan , Yong Siang Teo , Xiaowu Gong , Meng Kiat Jeoh
发明人： Yi He , Tuck Meng Chan , Yong Siang Teo , Xiaowu Gong , Meng Kiat Jeoh
IPC分类号： H02M3/335
CPC分类号： H02M3/3378 , H02M3/33592 , H02M2001/0058 , Y02B70/1433 , Y02B70/1475 , Y02B70/1491
摘要： An embodiment of the invention relates to an LLC power converter including a controller configured to regulate an output characteristic of the power converter by controlling a power converter switching frequency. In a first mode of operation, the controller turns off a secondary-side power switch earlier than a turn-off time of a primary-side power switch by a time difference that is controlled by a resistor coupled to an external circuit node. In a second mode of operation, the controller turns on a secondary-side power switch at substantially the same time as the primary-side power switch, and turns off the secondary-side power switch after a maximum on time that is a nonlinear function of a load current of the power converter. The nonlinear function is a substantially constant function of the load current for a value of the load current higher than a threshold value.
摘要翻译：本发明的实施例涉及一种LLC功率转换器，其包括被配置为通过控制功率转换器开关频率来调节功率转换器的输出特性的控制器。在第一操作模式中，控制器比次级侧电源开关早于初级侧电源开关的关断时间，该时间差由耦合到外部电路节点的电阻器控制。在第二操作模式中，控制器在与初级侧电源开关基本相同的时间接通次级侧电源开关，并且在作为非线性功能的最大导通时间之后关闭次级侧电源开关功率转换器的负载电流。对于高于阈值的负载电流的值，非线性函数是负载电流的基本上恒定的函数。

28. 发明授权

US08264898B2 Controlling AC disturbance while programming 有权
标题翻译：在编程时控制交流干扰
公开(公告)号：US08264898B2
公开(公告)日：2012-09-11
申请号：US13156763
申请日：2011-06-09
申请人： Sung-Yong Chung , Zhizheng Liu , Yugi Mizuguchi , Xuguang Alan Wang , Yi He , Ming Kwan , Darlene Hamilton , Sung-Chul Lee , Guowei Wang , Nancy Leong
发明人： Sung-Yong Chung , Zhizheng Liu , Yugi Mizuguchi , Xuguang Alan Wang , Yi He , Ming Kwan , Darlene Hamilton , Sung-Chul Lee , Guowei Wang , Nancy Leong
IPC分类号： G11C7/00
CPC分类号： G11C16/3418 , G11C16/0416 , G11C16/24 , G11C16/3427
摘要： A system and methodology that can minimize disturbance during an AC operation associated with a memory, such as, program, read and/or erase, is provided. The system pre-charges all or a desired subset of the bit lines in a memory array to a specified voltage, during an AC operation to facilitate reducing AC disturbances between neighboring cells. A pre-charge voltage can be applied to all bit lines in a block in the memory array, or to bit lines associated with a selected memory cell and neighbor memory cells adjacent to the selected memory cell in the block. The system ensures that source and drain voltage levels can be set to desired levels at the same or substantially the same time, while selecting a memory cell. This can facilitate minimizing AC disturbances in the selected memory cell during the AC operation.
摘要翻译：提供了一种能够在与诸如程序，读取和/或擦除之类的存储器相关联的AC操作期间最小化干扰的系统和方法。在AC操作期间，系统将存储器阵列中的所有或所需的位线子集预充电到指定的电压，以便于减少相邻单元之间的AC干扰。可以将预充电电压施加到存储器阵列中的块中的所有位线，或者对与所选择的存储器单元相关联的位线以及与块中所选择的存储单元相邻的相邻存储单元。该系统确保在选择存储器单元时，源极和漏极电压电平可以在相同或基本相同的时间被设置为期望的电平。这可以有助于在AC操作期间最小化所选择的存储器单元中的AC干扰。

29. 发明授权

US08249386B2 Video bandwidth resolution in DFT-based spectrum analysis 有权
标题翻译：基于DFT的频谱分析中的视频带宽分辨率
公开(公告)号：US08249386B2
公开(公告)日：2012-08-21
申请号：US12058546
申请日：2008-03-28
申请人： Yi He , Marcus K. Dasilva , Kathryn A. Engholm
发明人： Yi He , Marcus K. Dasilva , Kathryn A. Engholm
IPC分类号： G06K9/36
CPC分类号： G01R23/16
摘要： A method and apparatus for improved video bandwidth resolution in DFT-based spectrum analysis is disclosed. A first embodiment comprises an emulation of a continuous range of video bandwidths in DFT-based spectrum analysis using overlapping resolution bandwidth frames. A second embodiment utilizes frame weighting to reduce the standard deviation in the spectrum of noise signal to emulate a corresponding standard deviation of a specified video bandwidth.
摘要翻译：公开了一种在基于DFT的频谱分析中改进视频带宽分辨率的方法和装置。第一实施例包括使用重叠分辨率带宽帧在基于DFT的频谱分析中对视频带宽的连续范围的仿真。第二实施例利用帧加权来降低噪声信号频谱中的标准偏差，以模拟指定视频带宽的相应标准偏差。

30. 发明申请

US20120033458A1 System and Method for Power Conversion 有权
标题翻译：电源转换系统与方法
公开(公告)号：US20120033458A1
公开(公告)日：2012-02-09
申请号：US13274809
申请日：2011-10-17
申请人： Xiaowu Gong , Kok Kee Lim , Yong Siang Teo , Yi He , Winson Siew Teng Wong
发明人： Xiaowu Gong , Kok Kee Lim , Yong Siang Teo , Yi He , Winson Siew Teng Wong
IPC分类号： H02M3/335
CPC分类号： H02M3/33507 , H02M2001/0025 , H02M2001/0032 , Y02B70/16
摘要： A system and method for operating power supplies. A method comprises altering a current sense (CS) signal, turning off a switch of the converter in response to a determining that the CS signal is greater than or equal to a first threshold, and leaving on the switch of the converter in response to a determining that the CS signal is less than the first threshold.
摘要翻译：一种操作电源的系统和方法。一种方法包括改变电流检测（CS）信号，响应于确定CS信号大于或等于第一阈值而关闭转换器的开关，以及响应于转换器确定CS信号小于第一阈值。

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