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21. 发明申请

US20070054136A1 Film forming composition, insulating film and production process of the insulating film 审中-公开
标题翻译：绝缘膜的成膜组合物，绝缘膜和制造工艺
公开(公告)号：US20070054136A1
公开(公告)日：2007-03-08
申请号：US11515818
申请日：2006-09-06
申请人： Kazutaka Takahashi , Koji Wariishi , Kensuke Morita
发明人： Kazutaka Takahashi , Koji Wariishi , Kensuke Morita
IPC分类号： B32B9/04 , C07F7/18
CPC分类号： C09D183/14 , Y10T428/31663
摘要： A film forming composition comprising: at least one of a compound represented by formula (I) as defined in the specification, a hydrolysate of the compound represented by formula (I) and a polycondensate of the compound represented by formula (I); and a silicon surfactant, a production process of an insulating film by using the composition and the insulating film.
摘要翻译：一种成膜组合物，其包含：如本说明书中定义的由式（I）表示的化合物中的至少一种，由式（I）表示的化合物的水解产物和由式（I）表示的化合物的缩聚物; 硅表面活性剂，使用该组合物和绝缘膜的绝缘膜的制造方法。

22. 发明申请

US20070034992A1 Insulating film-forming composition, insulating film and production method thereof 失效
标题翻译：绝缘膜形成组合物，绝缘膜及其制造方法
公开(公告)号：US20070034992A1
公开(公告)日：2007-02-15
申请号：US11502389
申请日：2006-08-11
申请人： Koji Wariishi , Katsuyuki Watanabe , Kazutaka Takahashi
发明人： Koji Wariishi , Katsuyuki Watanabe , Kazutaka Takahashi
IPC分类号： H01L23/58
CPC分类号： H01L23/5329 , C09D4/00 , C09D183/14 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/31695 , H01L2924/0002 , Y10T428/31663 , C08G77/00 , H01L2924/00
摘要： An insulating film-forming composition comprising: at least one of a compound represented by formula (1) as defined in the specification, a hydrolysate and a condensate thereof; and at least one solvent, wherein the at least one solvent contains an organic solvent(s) having a boiling point of 85 to 250° C. in an amount of 25 mass % or more; a method for producing an insulating film by using the composition; and the insulating film.
摘要翻译：一种绝缘膜形成组合物，其包含：如说明书中定义的由式（1）表示的化合物，水解产物及其缩合物中的至少一种; 和至少一种溶剂，其中所述至少一种溶剂含有25质量％以上的沸点为85〜250℃的有机溶剂; 使用该组合物制造绝缘膜的方法; 和绝缘膜。

23. 发明申请

US20050244763A1 Black and white photothermographic material and image forming method 审中-公开
标题翻译：黑白光热成像材料及成像方法
公开(公告)号：US20050244763A1
公开(公告)日：2005-11-03
申请号：US11113242
申请日：2005-04-25
申请人： Kazutaka Takahashi , Takeshi Funakubo
发明人： Kazutaka Takahashi , Takeshi Funakubo
IPC分类号： G03C1/498 , G03C1/00 , G03C1/047 , G03C1/46 , G03C5/17
CPC分类号： G03C1/49818 , G03C1/047 , G03C1/46 , G03C1/49809 , G03C5/17 , G03C2001/0055 , G03C2001/0056 , G03C2001/0058 , G03C2001/03511 , G03C2001/0357 , G03C2001/7425 , G03C2200/03
摘要： The present invention provides a black and white photothermographic material having, on at least one side of a support, an image forming layer containing at least a photosensitive silver halide, a non-photosensitive organic silver salt, a reducing agent for silver ions, and a binder, as well as an image forming method. The black and white photothermographic material is characterized in that 50% or more of a total projected area of the photosensitive silver halide is occupied by tabular grains having a (111) face as a major face; the tabular grains have at least 2 parallel twin crystal planes in a grain; and a variation coefficient of a distribution of distances between closest twin crystal planes is 20% or less. Also provided is an image forming method that includes image exposure using fluorescent intensifying screens and thermal development. According to the invention, a black and white photothermographic material and image forming method realizing high image quality with favorable color tone of developed silver images are provided.
摘要翻译：本发明提供了一种黑色和白色光热敏成像材料，其在载体的至少一侧具有至少含有感光卤化银，非感光性有机银盐，银离子还原剂和粘合剂，以及成像方法。黑色和白色光热敏成像材料的特征在于，感光卤化银的总投影面积的50％或更多被具有（111）面作为主面的片状颗粒占据; 片状颗粒在颗粒中具有至少2个平行的双晶面; 并且最近的双晶面之间的距离分布的变化系数为20％以下。还提供了一种图像形成方法，其包括使用荧光增强屏幕的图像曝光和热显影。根据本发明，提供了一种黑白色光热成像材料和图像形成方法，其实现了高度图像质量，并且显影银色图像具有良好的色调。

24. 发明申请

US20050208441A1 Photothermographic material and image forming method utilizing the same 审中-公开
标题翻译：光热成像材料及其成像方法
公开(公告)号：US20050208441A1
公开(公告)日：2005-09-22
申请号：US11080781
申请日：2005-03-16
申请人： Takayoshi Oyamada , Keiichi Suzuki , Yasuhiro Yoshioka , Kazutaka Takahashi
发明人： Takayoshi Oyamada , Keiichi Suzuki , Yasuhiro Yoshioka , Kazutaka Takahashi
IPC分类号： G03C1/00 , G03C1/46 , G03C1/498 , G03C5/17
CPC分类号： G03C1/49872 , G03C1/04 , G03C1/46 , G03C1/49809 , G03C1/49818 , G03C1/49827 , G03C1/49845 , G03C1/49881 , G03C5/17 , G03C2001/03558 , G03C2001/03594 , G03C2007/3025 , G03C2200/35 , G03C2200/39 , G03C2200/52
摘要： The invention provides a photothermographic material having, at least on a surface of a substrate, an image forming layer including a photosensitive silver halide, a non-photosensitive organic silver salt, a reducing agent, and a binder, and adapted to be exposed with an X-ray intensifying screen, the material including a non-photosensitive intermediate layer A on a surface of the substrate at the side having the image forming layer and between an outermost layer farthest from the substrate and the image forming layer, wherein a binder of the non-photosensitive intermediate layer A includes a hydrophobic polymer by 50 mass % or more, or a photothermographic material in which the photosensitive silver halide has a silver iodide content of 40 to 100 mol. %, and an image forming method for such photothermographic materials.
摘要翻译：本发明提供一种光热敏成像材料，其至少在基材的表面上具有包含光敏卤化银，非光敏有机银盐，还原剂和粘合剂的图像形成层，并且适于暴露于 X射线增强屏幕，该材料包括在具有图像形成层的一侧的表面上的与基底最远的最外层和图像形成层之间的非光敏中间层A，其中粘合剂非感光性中间层A包含50质量％以上的疏水性聚合物，或光敏卤化银的碘化银含量为40〜100摩尔的光热敏成像材料。％，以及这种光热敏成像材料的成像方法。

25. 发明授权

US06933102B2 Silver halide photographic light-sensitive material 失效
标题翻译：卤化银照相感光材料
公开(公告)号：US06933102B2
公开(公告)日：2005-08-23
申请号：US09962078
申请日：2001-09-26
申请人： Kazutaka Takahashi , Terukazu Yanagi
发明人： Kazutaka Takahashi , Terukazu Yanagi
IPC分类号： G03C1/035 , G03C1/005 , G03C1/015 , G03C1/047 , G03C1/07
CPC分类号： G03C1/0051 , G03C1/047 , G03C1/07 , G03C2001/0153 , G03C2001/0357 , G03C2200/03
摘要： A silver halide photographic light-sensitive material is disclosed, comprising at least one silver halide emulsion characterized in that 50% or more of the projected area of all silver halide grains comprises tabular silver halide grains satisfying all of the following requirements (i) to (iii) and the coefficient of variation in the thickness of the tabular silver halide grains is less than 40%: (i) to have a grain thickness of less than 0.05 μm and an equivalent-circle diameter of 0.6 μm or more; (ii) to be silver iodobromide or silver chloroiodobromide having a silver bromide content of 70 mol % or more; (iii) to be a tabular silver halide grain having two parallel main planes comprising a (111) face.
摘要翻译：公开了一种卤化银照相感光材料，其包含至少一种卤化银乳剂，其特征在于所有卤化银颗粒的投影面积的50％或更多包括满足以下所有要求（I）至（ iii）并且片状卤化银颗粒的厚度变化系数小于40％：（i）具有小于0.05μm的颗粒厚度和0.6μm或更大的当量圆直径; （ii）为碘溴化银或溴化银含量为70摩尔％以上的氯碘溴化银; （iii）为具有包括（111）面的两个平行主平面的片状卤化银颗粒。

26. 发明申请

US20050133717A1 Method for manufacturing a split probe 失效
标题翻译：分离探针的制造方法
公开(公告)号：US20050133717A1
公开(公告)日：2005-06-23
申请号：US10822994
申请日：2004-04-13
申请人： Shoji Sadayama , Yoshiharu Shirakawabe , Kazutaka Takahashi
发明人： Shoji Sadayama , Yoshiharu Shirakawabe , Kazutaka Takahashi
IPC分类号： G01B15/00 , B25B9/02 , B82B3/00 , G01N23/00 , G01Q30/04 , G01Q60/16 , G01Q60/38 , G01Q60/40 , G01Q70/00 , G01Q70/10 , G01Q70/16
CPC分类号： G01Q20/04 , G01Q70/10
摘要： In order to provide a simple method for manufacturing a more finely detailed split probe with less damage being incurred, by tilting the whole of the microcantilever 6, it is possible to easily determine the center of the probe tip and decide processing position. Channel processing 1 and 2 is carried out using a small focused ion beam current over an extremely narrow range of the processing position. A channel 3 spanning a broad range connected to the channels 1 and 2 is processed using a focused ion beam current larger than the aforementioned focused ion beam current used at the channel processing of the channels 1 and 2, and the electrodes are cut.
摘要翻译：为了提供一种用于制造具有较少损伤的更精细的分割探针的简单方法，通过使整个微型悬臂梁6倾斜，可以容易地确定探针尖端的中心并确定加工位置。在处理位置的极窄范围内使用小的聚焦离子束电流进行通道处理1和2。使用大于在通道1和2的通道处理中使用的上述聚焦离子束电流的聚焦离子束电流来处理跨越与通道1和2连接的宽范围的通道3，并且切断电极。

27. 发明授权

US08669217B2 Cleaning composition, cleaning process, and process for producing semiconductor device 有权
标题翻译：清洁组合物，清洁工艺和半导体器件的制造工艺
公开(公告)号：US08669217B2
公开(公告)日：2014-03-11
申请号：US13050666
申请日：2011-03-17
申请人： Atsushi Mizutani , Hideo Fushimi , Tomonori Takahashi , Kazutaka Takahashi
发明人： Atsushi Mizutani , Hideo Fushimi , Tomonori Takahashi , Kazutaka Takahashi
IPC分类号： C11D7/50 , C11D11/00
CPC分类号： H01L21/02076 , C11D7/261 , C11D7/265 , C11D7/3209 , C11D11/0047 , H01L21/02063 , H01L21/02071
摘要： A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition. There are also provided a process for producing a semiconductor device that includes a step of cleaning plasma etching residue formed above a semiconductor substrate using the cleaning method, and a cleaning composition for removing plasma etching residue formed above a semiconductor substrate that contains 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10.
摘要翻译：提供一种清洗方法，其包括制备含有57〜95重量％的（a成分）水，1〜40重量％的（成分b）含羟基和/或叔羟基的羟基化合物，（组分c）有机酸和（组分d）季铵化合物，该组合物的pH为5〜10，以及通过清洗组合物除去在半导体衬底上形成的等离子体蚀刻残渣的步骤。还提供了一种半导体器件的制造方法，该半导体器件包括使用该清洁方法清洗形成在半导体衬底上的等离子体蚀刻残渣的步骤，以及用于除去形成在半导体衬底上的等离子体蚀刻残渣的清洗组合物，（成分a）的水，1〜40重量％的（成分b）含羟基和/或叔羟基的羟基化合物，（成分c）有机酸和（成分d）季铵化合物，该组合物的pH为5〜10。

28. 发明授权

US08083964B2 Metal-polishing liquid and polishing method 有权
标题翻译：金属抛光液和抛光方法
公开(公告)号：US08083964B2
公开(公告)日：2011-12-27
申请号：US12055930
申请日：2008-03-26
申请人： Toru Yamada , Makoto Kikuchi , Tadashi Inaba , Takahiro Matsuno , Takamitsu Tomiga , Kazutaka Takahashi
发明人： Toru Yamada , Makoto Kikuchi , Tadashi Inaba , Takahiro Matsuno , Takamitsu Tomiga , Kazutaka Takahashi
IPC分类号： C03C15/00
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： A metal-polishing liquid used for chemical-mechanical polishing of a conductor film of copper or a copper alloy in a process for manufacturing a semiconductor device, the metal-polishing liquid comprising: (1) an amino acid derivative represented by the formula (I); and (2) a surfactant, wherein, in the formula (I), R1 represents an alkyl group having 1 to 4 carbon atoms and R2 represents an alkylene group having 1 to 4 carbon atoms.
摘要翻译： 1.一种金属抛光液，其特征在于，在所述半导体装置的制造方法中，对铜或铜合金的导体膜进行化学机械研磨的金属研磨液，所述金属抛光液含有：（1）式）; 和（2）表面活性剂，其中，在式（I）中，R 1表示碳原子数1〜4的烷基，R 2表示碳原子数1〜4的亚烷基。

29. 发明申请

US20110237480A1 CLEANING COMPOSITION, CLEANING PROCESS, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE 有权
标题翻译：清洁组合物，清洁工艺和生产半导体器件的方法
公开(公告)号：US20110237480A1
公开(公告)日：2011-09-29
申请号：US13050666
申请日：2011-03-17
申请人： Atsushi MIZUTANI , Hideo Fushimi , Tomonori Takahashi , Kazutaka Takahashi
发明人： Atsushi MIZUTANI , Hideo Fushimi , Tomonori Takahashi , Kazutaka Takahashi
IPC分类号： C11D7/60
CPC分类号： H01L21/02076 , C11D7/261 , C11D7/265 , C11D7/3209 , C11D11/0047 , H01L21/02063 , H01L21/02071
摘要： A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition. There are also provided a process for producing a semiconductor device that includes a step of cleaning plasma etching residue formed above a semiconductor substrate using the cleaning method, and a cleaning composition for removing plasma etching residue formed above a semiconductor substrate that contains 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10.
摘要翻译：提供一种清洗方法，其包括制备含有57〜95重量％的（a成分）水，1〜40重量％的（成分b）含羟基和/或叔羟基的羟基化合物，（组分c）有机酸和（组分d）季铵化合物，该组合物的pH为5〜10，以及通过清洗组合物除去在半导体衬底上形成的等离子体蚀刻残渣的步骤。还提供了一种半导体器件的制造方法，该半导体器件包括使用该清洁方法清洗形成在半导体衬底上的等离子体蚀刻残渣的步骤，以及用于除去形成在半导体衬底上的等离子体蚀刻残渣的清洁组合物，该清洁组合物含有57〜95重量％（成分a）的水，1〜40重量％的（成分b）含羟基和/或叔羟基的羟基化合物，（成分c）有机酸和（成分d）季铵化合物，该组合物的pH为5〜10。

30. 发明授权

US07534292B2 Film-forming composition, insulating film obtained from the composition and electronic device having the same 失效
标题翻译：成膜组合物，由该组合物获得的绝缘膜和具有该成膜组合物的电子器件
公开(公告)号：US07534292B2
公开(公告)日：2009-05-19
申请号：US11376218
申请日：2006-03-16
申请人： Kazutaka Takahashi , Katsuyuki Watanabe
发明人： Kazutaka Takahashi , Katsuyuki Watanabe
IPC分类号： C09D4/00 , C09D7/00 , C04B41/49 , C04B41/50 , C09J11/06 , C07F7/18
CPC分类号： H01L21/312 , C08F232/00 , C08G61/04 , C08L65/00 , C09D7/65 , C09D183/16 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122
摘要： A film-forming composition comprising: a compound having a cage structure; and a silicon-containing surfactant; an insulating film formed by using the composition; and further, an electronic device comprising the insulating film.
摘要翻译：一种成膜组合物，其包含：具有笼结构的化合物; 和含硅表面活性剂; 通过使用该组合物形成的绝缘膜; 以及包括该绝缘膜的电子设备。

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