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1. 发明授权

US09068153B2 Cleaning composition, cleaning process, and process for producing semiconductor device 有权
标题翻译：清洁组合物，清洁工艺和半导体器件的制造工艺
公开(公告)号：US09068153B2
公开(公告)日：2015-06-30
申请号：US12893964
申请日：2010-09-29
申请人： Tomonori Takahashi , Kazutaka Takahashi , Atsushi Mizutani , Hiroyuki Seki , Hideo Fushimi , Tomoo Kato
发明人： Tomonori Takahashi , Kazutaka Takahashi , Atsushi Mizutani , Hiroyuki Seki , Hideo Fushimi , Tomoo Kato
IPC分类号： C09K13/06 , C11D11/00 , C11D7/08 , C11D7/50
CPC分类号： G03F7/425 , C09K13/00 , C09K13/06 , C11D7/08 , C11D7/265 , C11D7/3209 , C11D7/3245 , C11D7/34 , C11D7/5013 , C11D11/0047 , G03F7/422 , G03F7/423 , H01L21/02052 , H01L21/02057 , H01L21/02063 , H01L21/02068 , H01L21/02071 , H01L21/31133 , H01L21/32134 , H01L21/32136 , H01L21/32138 , H01L21/32139
摘要： A cleaning composition for removing plasma etching residue and/or ashing residue formed above a semiconductor substrate is provided that includes (component a) water, (component b) a hydroxylamine and/or a salt thereof, (component c) a basic organic compound, and (component d) an organic acid and has a pH of 7 to 9. There are also provided a cleaning process and a process for producing semiconductor device employing the cleaning composition.
摘要翻译：提供了用于去除形成在半导体衬底上的等离子体蚀刻残渣和/或灰化残留物的清洁组合物，其包括（组分a）水，（组分b）羟胺和/或其盐，（组分c）碱性有机化合物，和（组分d）有机酸，并且具有7至9的pH。还提供了一种清洁方法和使用该清洁组合物的半导体器件的制造方法。

2. 发明授权

US08669217B2 Cleaning composition, cleaning process, and process for producing semiconductor device 有权
标题翻译：清洁组合物，清洁工艺和半导体器件的制造工艺
公开(公告)号：US08669217B2
公开(公告)日：2014-03-11
申请号：US13050666
申请日：2011-03-17
申请人： Atsushi Mizutani , Hideo Fushimi , Tomonori Takahashi , Kazutaka Takahashi
发明人： Atsushi Mizutani , Hideo Fushimi , Tomonori Takahashi , Kazutaka Takahashi
IPC分类号： C11D7/50 , C11D11/00
CPC分类号： H01L21/02076 , C11D7/261 , C11D7/265 , C11D7/3209 , C11D11/0047 , H01L21/02063 , H01L21/02071
摘要： A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition. There are also provided a process for producing a semiconductor device that includes a step of cleaning plasma etching residue formed above a semiconductor substrate using the cleaning method, and a cleaning composition for removing plasma etching residue formed above a semiconductor substrate that contains 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10.
摘要翻译：提供一种清洗方法，其包括制备含有57〜95重量％的（a成分）水，1〜40重量％的（成分b）含羟基和/或叔羟基的羟基化合物，（组分c）有机酸和（组分d）季铵化合物，该组合物的pH为5〜10，以及通过清洗组合物除去在半导体衬底上形成的等离子体蚀刻残渣的步骤。还提供了一种半导体器件的制造方法，该半导体器件包括使用该清洁方法清洗形成在半导体衬底上的等离子体蚀刻残渣的步骤，以及用于除去形成在半导体衬底上的等离子体蚀刻残渣的清洗组合物，（成分a）的水，1〜40重量％的（成分b）含羟基和/或叔羟基的羟基化合物，（成分c）有机酸和（成分d）季铵化合物，该组合物的pH为5〜10。

3. 发明授权

US08647523B2 Etching composition 有权
标题翻译：蚀刻组成
公开(公告)号：US08647523B2
公开(公告)日：2014-02-11
申请号：US13415390
申请日：2012-03-08
申请人： Tomonori Takahashi , Tadashi Inaba , Atsushi Mizutani , Bing Du , William A. Wojtczak , Kazutaka Takahashi , Tetsuya Kamimura
发明人： Tomonori Takahashi , Tadashi Inaba , Atsushi Mizutani , Bing Du , William A. Wojtczak , Kazutaka Takahashi , Tetsuya Kamimura
IPC分类号： C03C15/00
CPC分类号： H01L21/32134 , C09K13/06 , C23F1/16 , C23F1/28 , C23F1/30 , C23F1/44 , H01L21/28518 , H01L21/76843
摘要： This disclosure relates to an etching composition containing at least one sulfonic acid, at least one compound containing a halide anion, the halide being chloride or bromide, at least one compound containing a nitrate or nitrosyl ion, and water. The at least one sulfonic acid can be from about 25% by weight to about 95% by weight of the composition. The halide anion can be chloride or bromide, and can be from about 0.01% by weight to about 0.5% by weight of the composition. The nitrate or nitrosyl ion can be from about 0.1% by weight to about 20% by weight of the composition. The water can be at least about 3% by weight of the composition.
摘要翻译：本公开涉及含有至少一种磺酸，至少一种含卤化物阴离子的化合物，卤化物为氯化物或溴化物，至少一种含有硝酸根或亚硝酰基离子的化合物和水的蚀刻组合物。所述至少一种磺酸可以为所述组合物的约25重量％至约95重量％。卤化物阴离子可以是氯化物或溴化物，并且可以是组合物的约0.01重量％至约0.5重量％。硝酸盐或亚硝酰离子可以为组合物的约0.1重量％至约20重量％。水可以是组合物的至少约3重量％。

4. 发明申请

US20120231632A1 Novel Etching Composition 有权
标题翻译：新型蚀刻成分
公开(公告)号：US20120231632A1
公开(公告)日：2012-09-13
申请号：US13415390
申请日：2012-03-08
申请人： Tomonori Takahashi , Tadashi Inaba , Atsushi Mizutani , Bing Du , William A. Wojtczak , Kazutaka Takahashi , Tetsuya Kamimura
发明人： Tomonori Takahashi , Tadashi Inaba , Atsushi Mizutani , Bing Du , William A. Wojtczak , Kazutaka Takahashi , Tetsuya Kamimura
IPC分类号： H01L21/306 , C09K13/06 , C09K13/00
CPC分类号： H01L21/32134 , C09K13/06 , C23F1/16 , C23F1/28 , C23F1/30 , C23F1/44 , H01L21/28518 , H01L21/76843
摘要： This disclosure relates to an etching composition containing at least one sulfonic acid, at least one compound containing a halide anion, the halide being chloride or bromide, at least one compound containing a nitrate or nitrosyl ion, and water. The at least one sulfonic acid can be from about 25% by weight to about 95% by weight of the composition. The halide anion can be chloride or bromide, and can be from about 0.01% by weight to about 0.5% by weight of the composition. The nitrate or nitrosyl ion can be from about 0.1% by weight to about 20% by weight of the composition. The water can be at least about 3% by weight of the composition.
摘要翻译：本公开涉及含有至少一种磺酸，至少一种含卤化物阴离子的化合物，卤化物为氯化物或溴化物，至少一种含有硝酸根或亚硝酰基离子的化合物和水的蚀刻组合物。所述至少一种磺酸可以为所述组合物的约25重量％至约95重量％。卤化物阴离子可以是氯化物或溴化物，并且可以是组合物的约0.01重量％至约0.5重量％。硝酸盐或亚硝酰离子可以为组合物的约0.1重量％至约20重量％。水可以是组合物的至少约3重量％。

5. 发明授权

US08617417B2 Cleaning composition, method for producing semiconductor device, and cleaning method 有权
标题翻译：清洗组合物，半导体装置的制造方法以及清洗方法
公开(公告)号：US08617417B2
公开(公告)日：2013-12-31
申请号：US13107199
申请日：2011-05-13
申请人： Tadashi Inaba , Kazutaka Takahashi , Tomonori Takahashi , Atsushi Mizutani
发明人： Tadashi Inaba , Kazutaka Takahashi , Tomonori Takahashi , Atsushi Mizutani
IPC分类号： C09K13/00
CPC分类号： C11D11/0047 , C11D7/265 , C11D7/3209 , C11D7/3218 , C11D7/5004
摘要： Provided are a cleaning composition which is capable of inhibiting the metal of a semiconductor substrate from corrosion, and has an excellent removability of plasma etching residues and/or ashing residues on the semiconductor substrate, a method for producing a semiconductor device, and a cleaning method using the cleaning composition. The cleaning composition for removing plasma etching residues and/or ashing residues formed on a semiconductor substrate, and a preparation method and a cleaning method for a semiconductor device, using the cleaning composition, wherein the cleaning composition includes (Component a) water; (Component b) an amine compound; (Component c) hydroxylamine and/or a salt thereof; (Component d) a quaternary ammonium compound; (Component e) an organic acid; and (Component f) a water-soluble organic solvent; and has a pH of 6 to 9.
摘要翻译：本发明提供能够抑制半导体衬底的金属腐蚀并且具有优异的半导体衬底上的等离子体蚀刻残留物和/或灰化残留物的可除去性的清洁组合物，半导体器件的制造方法和清洁方法使用清洁组合物。用于除去形成在半导体衬底上的等离子体蚀刻残渣和/或灰化残留物的清洁组合物，以及使用该清洁组合物的半导体器件的制备方法和清洁方法，其中所述清洁组合物包含（组分a）水; （组分b）胺化合物; （组分c）羟胺和/或其盐; （组分d）季铵化合物; （组分e）有机酸; 和（组分f）水溶性有机溶剂; pH为6〜9。

6. 发明申请

US20150105100A1 INFORMATION ASSOCIATION SYSTEM 有权
标题翻译：信息协会系统
公开(公告)号：US20150105100A1
公开(公告)日：2015-04-16
申请号：US14391852
申请日：2012-04-20
申请人： Naofumi Magarida , Atsushi Mizutani , Yuta Oshiro
发明人： Naofumi Magarida , Atsushi Mizutani , Yuta Oshiro
IPC分类号： G01S5/02 , G01L1/00 , G01P15/00
CPC分类号： G01S5/0284 , G01L1/00 , G01P15/00 , H04M1/6075 , H04M1/7253
摘要： An information association system for identifying a mobile terminal owned by a driver accurately is disclosed. The information association system is allowed to communicate with the mobile terminal and sensors arranged in a vehicle, and configured to identify the mobile terminal owned by the driver based on information about a detected signals transmitted form the mobile terminal(s) and sensor(s).
摘要翻译：公开了一种用于识别由驾驶员拥有的移动终端的信息关联系统。允许信息关联系统与布置在车辆中的移动终端和传感器通信，并且被配置为基于关于从移动终端和传感器发送的检测信号的信息来识别驾驶员拥有的移动终端，。

7. 发明授权

US08378628B2 Plug conversion adaptor 有权
标题翻译：插头转换适配器
公开(公告)号：US08378628B2
公开(公告)日：2013-02-19
申请号：US13120332
申请日：2009-02-26
申请人： Shinji Ichikawa , Kenji Itagaki , Masaru Sasaki , Wanleng Ang , Kenji Murasato , Atsushi Mizutani , Yukihiro Yamamoto , Taira Kikuchi , Yoshikazu Kataoka , Shingo Ieda , Hiroki Sawada , Yoshinori Fujitake
发明人： Shinji Ichikawa , Kenji Itagaki , Masaru Sasaki , Wanleng Ang , Kenji Murasato , Atsushi Mizutani , Yukihiro Yamamoto , Taira Kikuchi , Yoshikazu Kataoka , Shingo Ieda , Hiroki Sawada , Yoshinori Fujitake
IPC分类号： H02J7/00
CPC分类号： H01R31/065 , B60L3/0069 , B60L3/04 , B60L11/005 , B60L11/1818 , B60L2230/12 , B60L2270/32 , B60L2270/34 , H01R13/665 , H01R13/70 , Y02T10/7005 , Y02T10/7022 , Y02T10/7088 , Y02T90/121 , Y02T90/14
摘要： A conversion adaptor enables utilization of a standardized charge cable used when a power storage device mounted on an electrically-powered vehicle is charged by a power source provided outside of the vehicle as a universal cable for transmitting electric power to electric loads having different plug shapes that are respectively standardized from one region to another. Conversion adaptor includes a primary side connector unit configured to be connectable to a connector of charge cable, a secondary side connector unit configured so as to have a plug of an electric load, such as a home electric appliance, connected thereto, and a manipulating unit for manipulating a CCID of charge cable so that relays are switched off when connector of charge cable is connected to first connector unit.
摘要翻译：转换适配器使得利用当安装在电动车辆上的电力存储装置由设置在车辆外部的电源充电的标准化充电电缆作为用于将电力传送到具有不同插头形状的电负载的通用电缆时，分别从一个区域到另一个区域标准化。转换适配器包括被配置为可连接到充电电缆的连接器的初级侧连接器单元，被配置为具有连接到其上的诸如家用电器的电负载插头的次级侧连接器单元和操纵单元用于操作充电电缆的CCID，以便当充电电缆的连接器连接到第一连接器单元时，继电器被关闭。

8. 发明授权

US08202445B2 Metal polishing composition and chemical mechanical polishing method 有权
标题翻译：金属抛光组合物和化学机械抛光方法
公开(公告)号：US08202445B2
公开(公告)日：2012-06-19
申请号：US12404353
申请日：2009-03-16
申请人： Sumi Takamiya , Tadashi Inaba , Atsushi Mizutani , Tomoo Kato , Toshiyuki Saie
发明人： Sumi Takamiya , Tadashi Inaba , Atsushi Mizutani , Tomoo Kato , Toshiyuki Saie
IPC分类号： C09K13/06
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1409
摘要： The invention provides a metal polishing composition that is used in chemical mechanical polishing in production of a semiconductor device, and includes an oxidizing agent, an abrasive grain, and at least one compound selected from compounds represented by the following formula (I) and the following formula (II). The invention also provides a chemical mechanical polishing method that uses the metal polishing composition. In formula (I), R1 represents a hydrogen atom or an alkyl group, and Ph represents a phenyl ring. In formula (II), R2 represents a hydrogen atom or an alkyl group, and Ph represents a phenyl ring.
摘要翻译：本发明提供一种用于制造半导体器件的化学机械抛光中的金属抛光组合物，包括氧化剂，磨粒和至少一种选自下式（I）表示的化合物和下述式式（II）。本发明还提供了使用金属抛光组合物的化学机械抛光方法。在式（I）中，R 1表示氢原子或烷基，Ph表示苯基。式（II）中，R 2表示氢原子或烷基，Ph表示苯基。

9. 发明授权

US07887402B2 Game device, computer control method, and information storage medium 有权
标题翻译：游戏装置，计算机控制方法和信息存储介质
公开(公告)号：US07887402B2
公开(公告)日：2011-02-15
申请号：US11792236
申请日：2005-07-04
申请人： Eiji Suzuki , Tadakatsu Izumi , Ippei Kondo , Atsushi Mizutani
发明人： Eiji Suzuki , Tadakatsu Izumi , Ippei Kondo , Atsushi Mizutani
IPC分类号： A63F13/00 , G06F17/00 , A63F9/24
CPC分类号： A63F13/537 , A63F13/10 , A63F13/573 , A63F13/812 , A63F2300/303 , A63F2300/64 , A63F2300/8011
摘要： To provide a game device for presenting to a player inputting the amount of operation while utilizing a gauge, the length of a gauge which corresponds to a desired amount of operation. In a game device in which an object placed in a virtual three dimensional space is moved by a distance according to the displayed length of the gauge when the player carries out a predetermined operation, a target position to which the object is going to be moved is obtained (S102), a distance between the target movement position and the present position of the object is calculated (S103), and the length of the gauge corresponding to the calculated distance L is calculated based on the distance L (S104). Then, the target length of the gauge is presented based on the calculated length of the gauge (S105).
摘要翻译：为了提供游戏装置，用于在使用量规时向玩家呈现输入操作量，对应于期望的操作量的量表的长度。在游戏装置中，当游戏者执行预定操作时，放置在虚拟三维空间中的物体根据显示器的长度移动一定距离的游戏装置，对象将被移动到的目标位置是（S102），计算目标移动位置与目标的当前位置的距离（S103），并且基于距离L计算与计算出的距离L对应的计量器的长度（S104）。然后，基于计算出的计量长度来显示量规的目标长度（S105）。

10. 发明授权

US06004618A Method and apparatus for fabricating electroluminescent device 失效
标题翻译：用于制造电致发光器件的方法和装置
公开(公告)号：US06004618A
公开(公告)日：1999-12-21
申请号：US841334
申请日：1997-04-30
申请人： Atsushi Mizutani , Masayuki Katayama , Nobuei Ito , Tadashi Hattori
发明人： Atsushi Mizutani , Masayuki Katayama , Nobuei Ito , Tadashi Hattori
IPC分类号： C23C16/30 , C23C16/44 , C23C16/455 , H05B33/10 , H05B33/14 , B05D5/12 , C23C16/00
CPC分类号： C23C16/45576 , C23C16/305 , H05B33/10
摘要： Fabrication of an electroluminescent device having a high-quality luminescent layer is disclosed. The device emits intense blue light. A first electrode layer, a first dielectric layer, the luminescent layer, a second dielectric layer, and a second electrode layer are successively formed on a glass substrate. At least the exit side of the device is made from an optically transparent material. A first gaseous source material of a group II element belonging to group II of the periodic table, a second gaseous source material of a group VIB element belonging to group VIB, and a third gaseous source material of an element forming the luminescent center of the luminescent layer are supplied into a reaction furnace through first, second, and third gas supply tubes, respectively, and caused to react with each other. Thus, the luminescent layer is formed by chemical vapor deposition. The first material acts as a base material from which the luminescent layer is formed. The first tube for the first material is laid in the center of the furnace. The third tube for the third material forming the luminescent center is laid around the first gas supply tube. The second tube is laid around the third tube.
摘要翻译：公开了具有高品质发光层的电致发光器件的制造。该装置发出强烈的蓝光。在玻璃基板上依次形成第一电极层，第一电介质层，发光层，第二电介质层和第二电极层。至少装置的出口侧由光学透明材料制成。属于元素周期表II族的第II族元素的第一气态源材料，属于VIB族的VIB族元素的第二气态源材料和形成发光体的发光中心的元素的第三气态源材料层分别通过第一，第二和第三气体供给管供给到反应炉中，并使其彼此反应。因此，通过化学气相沉积形成发光层。第一材料作为形成发光层的基材。用于第一种材料的第一管被放置在炉的中心。形成发光中心的第三材料的第三管被放置在第一气体供应管的周围。第二个管被放置在第三根管子周围。

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