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21. 发明授权

US06747239B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US06747239B2
公开(公告)日：2004-06-08
申请号：US10437030
申请日：2003-05-14
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Ryoji Nishio , Seiichiro Kanno , Hideyuki Yamamoto
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Ryoji Nishio , Seiichiro Kanno , Hideyuki Yamamoto
IPC分类号： B23K1000
CPC分类号： H01L21/67253 , H01J37/32935
摘要： A plasma processing apparatus having a process chamber to process specimens; a status detecting unit for detecting the internal processing status of the process chamber and outputting a plurality of signals; and a signal converting unit for extracting an arbitrary number of signal processing filters from a signal filter database using a signal filter selector and creating an arbitrary number of device status signals. The signal converting unit creates fewer effective device status signals of a time series from the output signals.
摘要翻译：一种等离子体处理装置，具有处理试样的处理室; 状态检测单元，用于检测处理室的内部处理状态并输出多个信号; 以及信号转换单元，用于使用信号滤波器选择器从信号滤波器数据库中提取任意数量的信号处理滤波器，并创建任意数量的装置状态信号。信号转换单元从输出信号产生一个时间序列的有效装置状态信号。

22. 发明授权

US06590179B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US06590179B2
公开(公告)日：2003-07-08
申请号：US09791732
申请日：2001-02-26
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Ryoji Nishio , Seiichiro Kanno , Hideyuki Yamamoto
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Ryoji Nishio , Seiichiro Kanno , Hideyuki Yamamoto
IPC分类号： B23K1000
CPC分类号： H01L21/67253 , H01J37/32935
摘要： A plasma processing apparatus having a process chamber to process specimens, a status detecting means for detecting the internal processing status of said process chamber and outputting a plurality of signals, and signal converting means for extracting an arbitrary number of signal processing filters from a signal filter database using a signal filter selecting means and creating an arbitrary number of device status signals. The signal converting means creates fewer effective device status signals of a time series from said output signals.
摘要翻译：一种具有处理试样的处理室的等离子体处理装置，检测所述处理室的内部处理状态并输出多个信号的状态检测装置，以及从信号滤波器提取任意数量的信号处理滤波器的信号转换装置数据库，使用信号滤波器选择装置并创建任意数量的装置状态信号。信号转换装置从所述输出信号产生一个时间序列的有效装置状态信号。

23. 发明授权

US08680466B2 Electron microscope, and specimen holding method 有权
标题翻译：电子显微镜和样品保持法
公开(公告)号：US08680466B2
公开(公告)日：2014-03-25
申请号：US13202556
申请日：2009-10-15
申请人： Seiichiro Kanno , Hiroyuki Kitsunai , Masaru Matsushima , Toru Shuto , Kazuyuki Ikenaga
发明人： Seiichiro Kanno , Hiroyuki Kitsunai , Masaru Matsushima , Toru Shuto , Kazuyuki Ikenaga
IPC分类号： H01J37/28
CPC分类号： H01J37/20 , G01R31/307 , H01J37/28 , H01J2237/2007
摘要： It is an object of the present invention to provide an electron microscope for properly applying a retarding voltage to a sample which is brought into electrical conduction.In order to accomplish the above-described object, the following electron microscope is proposed: The electron microscope including a negative-voltage applying power-supply for applying the negative voltage to the sample, and thereby forming a decelerating electric field to be exerted onto the electron beam, an electrostatic-chuck mechanism for providing a potential difference among a plurality of its internal electrodes, and thereby generating an adsorption force to be exerted onto the sample, and a contact terminal which is so configured as to come into contact with the sample when the sample is deployed on a sample-supporting stage, the electrostatic-chuck mechanism causes the potential difference to occur among the internal electrodes in the state where the contact terminal comes into contact with the sample, the negative-voltage applying power-supply being operated to apply the negative voltage to the contact terminal after the potential difference has been caused to occur.
摘要翻译：本发明的目的在于提供一种电子显微镜，用于对被导入的样品适当地施加延迟电压。为了实现上述目的，提出了以下电子显微镜：电子显微镜，其包括负电压施加电源，用于向样品施加负电压，从而形成施加到该样品上的减速电场电子束，用于在多个内部电极之间提供电位差的静电吸盘机构，从而产生施加到样品上的吸附力;以及接触端子，其被配置为与样品接触当样品被部署在样品支撑台上时，静电吸盘机构在接触端子与样品接触的状态下在内部电极之间产生电位差，负压施加电源为在发生电位差之后，将负电压施加到接触端子。

24. 发明申请

US20100282414A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20100282414A1
公开(公告)日：2010-11-11
申请号：US12842368
申请日：2010-07-23
申请人： Naoshi ITABASHI , Tsutomu Tetsuka , Seiichiro Kanno , Motohiko Yoshigai
发明人： Naoshi ITABASHI , Tsutomu Tetsuka , Seiichiro Kanno , Motohiko Yoshigai
IPC分类号： H01L21/306
CPC分类号： H01J37/32706 , H01J37/32082 , H01J37/32495 , H01J37/32935 , H01L21/6831
摘要： A plasma processing apparatus including a chamber having an inner wall with a protective film thereon and a sample stage disposed in the chamber in which plasma is generated by supplying high-frequency wave energy to processing gas to conduct plasma processing for a sample on the sample stage using the plasma. The apparatus includes a control device which determines, based on monitor values of a wafer attracting current monitor (Ip) to monitor a current supplied from a wafer attracting power source, an impedance monitor (Zp) to monitor plasma impedance viewed from a plasma generating power source, and an impedance monitor (Zb) to monitor a plasma impedance viewed from a bias power supply, presence or absence of occurrence of an associated one of abnormal discharge in inner parts, deterioration in insulation of an insulating film of a wafer attracting electrode, and abnormal injection in a gas injection plate.
摘要翻译：一种等离子体处理装置，包括：室，具有保护膜的内壁和设置在室中的样品台，其中通过向处理气体提供高频波能以对样品台进行等离子体处理使用等离子体。该装置包括控制装置，其基于监视从晶片吸引电源提供的电流的晶片吸引电流监视器（Ip）的值来确定阻抗监视器（Zp），以监测从等离子体发生功率源极和阻抗监视器（Zb），用于监视从偏置电源观察的等离子体阻抗，是否存在内部部分的异常放电相关联的一种，晶片吸引电极的绝缘膜的绝缘的劣化，并在气体注射板中异常注入。

25. 发明授权

US06895179B2 Wafer stage for wafer processing apparatus 失效
标题翻译：晶圆处理装置的晶圆台
公开(公告)号：US06895179B2
公开(公告)日：2005-05-17
申请号：US10658280
申请日：2003-09-10
申请人： Seiichiro Kanno , Ken Yoshioka , Ryoji Nishio , Saburou Kanai , Hideki Kihara , Koji Okuda
发明人： Seiichiro Kanno , Ken Yoshioka , Ryoji Nishio , Saburou Kanai , Hideki Kihara , Koji Okuda
IPC分类号： H01L21/00 , H01L21/683 , F26B19/00
CPC分类号： H01L21/67109 , H01L21/6831
摘要： A wafer stage for use in a wafer processing apparatus having a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate as attached onto the liquid cooling jacket and having therein a heater and an electrode for an electrostatic chuck. The wafer stage enables performance of wafer processing while letting a wafer be mounted on the ceramic plate. The liquid cooling jacket enables attachment of the ceramic plate through a gap for circulation of a coolant gas as formed over the liquid cooling jacket, and a heat resistant seal material containing therein an elastic body for sealing the coolant gas between the liquid cooling jacket and the ceramic plate.
摘要翻译：一种用于晶片处理装置的晶片台，其具有附接到液体冷却套上的具有内置冷却剂液体循环路径的液体冷却套和陶瓷板，并且其中具有用于静电卡盘的加热器和电极。晶片台可以在将晶片安装在陶瓷板上的同时实现晶片处理的性能。液体冷却套管能够通过用于在液体冷却套上形成的冷却剂气体的循环的间隙来安装陶瓷板，以及耐热密封材料，其中容纳有用于将液体冷却套和第二组件之间的冷却剂气体密封的弹性体陶瓷板。

26. 发明授权

US06243251B1 Electrostatic chuck, and method of and apparatus for processing sample using the chuck 失效
标题翻译：静电吸盘，使用卡盘处理样品的方法和设备
公开(公告)号：US06243251B1
公开(公告)日：2001-06-05
申请号：US09382779
申请日：1999-08-25
申请人： Seiichiro Kanno , Tatehito Usui , Ken Yoshioka , Saburo Kanai , Youichi Itou
发明人： Seiichiro Kanno , Tatehito Usui , Ken Yoshioka , Saburo Kanai , Youichi Itou
IPC分类号： H02N1300
CPC分类号： H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck includes a pair of electrodes having different polarities, and a dielectric film, formed on top surfaces of the pair of electrodes, on which a sample to be electrostatically attracted and held when a DC voltage is applied between the pair of electrodes, wherein the respective amounts of electric charges stored on attracting portions of the dielectric film corresponding to the pair of electrodes, directly before stopping supply of the DC voltage applied between the pair of electrodes, are substantially equal to each other. With this chuck, the electric charges stored on the attracting portions of the dielectric film after stopping supply of the DC voltage can be eliminated due to the balance between the electric charges having different polarities. The electrostatic chuck is subjected to a significantly reduced residual attracting force.
摘要翻译：静电卡盘包括具有不同极性的一对电极和形成在一对电极的顶表面上的电介质膜，当在一对电极之间施加直流电压时，待静电吸引并保持的样品，其中在停止施加在该对电极之间的直流电压的供给之前，直接在与该对电极对应的电介质膜的吸引部分上存储的电荷的相应量基本相等。利用该卡盘，可以通过在极性不同的电荷之间的平衡来消除在停止供给直流电压之后存储在电介质膜的吸引部分上的电荷。静电吸盘受到显着降低的残留吸引力。

27. 发明申请

US20120256087A1 Scanning Electron Microscope 失效
标题翻译：扫描电子显微镜
公开(公告)号：US20120256087A1
公开(公告)日：2012-10-11
申请号：US13518236
申请日：2010-12-24
申请人： Seiichiro Kanno , Hiroyuki Kitsunai , Masaru Matsushima
发明人： Seiichiro Kanno , Hiroyuki Kitsunai , Masaru Matsushima
IPC分类号： H01J37/20
CPC分类号： H01L21/6831 , H01J37/20 , H01J2237/2007 , H01J2237/28
摘要： There is provided a technique that is capable of attracting a sample without making the voltage applied to an electrostatic chuck unnecessarily large. Attraction experiments with respect to the electrostatic chuck are performed using a testing sample whose degree of warp and pattern of warp are known, and a critical application voltage at which the attraction state changes from “bad” to “good” is found. When measuring an inspection target sample, the flatness of the inspection target sample is measured, and the degree of warp and pattern of warp of the inspection target sample are detected. Based on the degree of warp and pattern of warp of the inspection target sample and on the known critical application voltage, the application voltage for the electrostatic chuck is set.
摘要翻译：提供了能够吸引样品而不使施加到静电卡盘的电压不必要地大的技术。对于静电卡盘的吸引实验，使用已知翘曲度和翘曲方式的试样，以及吸附状态从不良变为良好的临界施加电压来进行。在测定检查对象样品时，测定检查对象样品的平坦度，检测检查对象样品的翘曲程度和翘曲图案。基于检测对象样品的翘曲和翘曲的程度以及已知的关键施加电压，设定静电卡盘的施加电压。

28. 发明申请

US20110303844A1 ELECTRON MICROSCOPE, AND SPECIMEN HOLDING METHOD 有权
标题翻译：电子显微镜和样本保持方法
公开(公告)号：US20110303844A1
公开(公告)日：2011-12-15
申请号：US13202556
申请日：2009-10-15
申请人： Seiichiro Kanno , Hiroyuki Kitsunai , Masaru Matsushima , Toru Shuto , Kazuyuki Ikenaga
发明人： Seiichiro Kanno , Hiroyuki Kitsunai , Masaru Matsushima , Toru Shuto , Kazuyuki Ikenaga
IPC分类号： H01J37/20 , H01J37/28
CPC分类号： H01J37/20 , G01R31/307 , H01J37/28 , H01J2237/2007
摘要： It is an object of the present invention to provide an electron microscope for properly applying a retarding voltage to a sample which is brought into electrical conduction.In order to accomplish the above-described object, the following electron microscope is proposed: The electron microscope including a negative-voltage applying power-supply for applying the negative voltage to the sample, and thereby forming a decelerating electric field to be exerted onto the electron beam, an electrostatic-chuck mechanism for providing a potential difference among a plurality of its internal electrodes, and thereby generating an adsorption force to be exerted onto the sample, and a contact terminal which is so configured as to come into contact with the sample when the sample is deployed on a sample-supporting stage, the electrostatic-chuck mechanism causes the potential difference to occur among the internal electrodes in the state where the contact terminal comes into contact with the sample, the negative-voltage applying power-supply being operated to apply the negative voltage to the contact terminal after the potential difference has been caused to occur.
摘要翻译：本发明的目的在于提供一种电子显微镜，用于对被导入的样品适当地施加延迟电压。为了实现上述目的，提出了以下电子显微镜：电子显微镜，其包括负电压施加电源，用于向样品施加负电压，从而形成施加在该样品上的减速电场电子束，用于在多个内部电极之间提供电位差的静电吸盘机构，从而产生施加到样品上的吸附力;以及接触端子，其被配置为与样品接触当样品被部署在样品支撑台上时，静电吸盘机构在接触端子与样品接触的状态下在内部电极之间产生电位差，负压施加电源为在发生电位差之后，将负电压施加到接触端子。

29. 发明授权

US07771564B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07771564B2
公开(公告)日：2010-08-10
申请号：US11512081
申请日：2006-08-30
申请人： Ken'etsu Yokogawa , Takumi Tandou , Seiichiro Kanno
发明人： Ken'etsu Yokogawa , Takumi Tandou , Seiichiro Kanno
IPC分类号： H01L21/3065 , C23C16/00 , C23C16/458 , C23C16/46
CPC分类号： H01L21/67109 , H01J37/32431 , H01J2237/2001
摘要： In a plasma processing apparatus equipped with a vacuum vessel and a sample table which is arranged within the vacuum vessel and has a sample mounting plane where a sample is mounted on an upper portion, for forming plasma within the processing chamber so as to process a sample mounted on the sample mounting plane, the plasma processing apparatus includes: a space arranged inside the sample table, into which a coolant is supplied; a ceiling plane of the space arranged opposite to the sample mounting plane, with which the coolant collides from plural portions; and an exhaust port via which the coolant which has collided with the ceiling plane to be evaporated is exhausted from the sample table.
摘要翻译：在配备有真空容器和样品台的等离子体处理装置中，其设置在真空容器内并具有样品安装面，样品安装在上部，用于在处理室内形成等离子体，以便处理样品安装在样品安装平面上的等离子体处理设备包括：布置在样品台内部的空间，供应冷却剂的空间; 与样品安装平面相对的空间的顶板，冷却剂与多个部分碰撞; 以及与待蒸发的顶板相撞的冷却剂通过该排气口从样品台排出。

30. 发明申请

US20050089625A1 Method for operating a semiconductor processing apparatus 失效
标题翻译：操作半导体处理装置的方法
公开(公告)号：US20050089625A1
公开(公告)日：2005-04-28
申请号：US10997888
申请日：2004-11-29
申请人： Seiichiro Kanno , Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Hideki Kihara , Hideyuki Yamamoto
发明人： Seiichiro Kanno , Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Hideki Kihara , Hideyuki Yamamoto
IPC分类号： H01L21/00 , B05D1/00 , H01L21/31 , H01L21/469
CPC分类号： H01L21/67253 , H01J37/32082 , H01J37/3299 , H01J2237/334 , H01L21/67069 , H01L21/67248
摘要： A method for operating a semiconductor processing apparatus that plasma-processes a semiconductor wafer mounted on a stage placed in a container using a plasma generated therein. The method includes setting a temperature of the semiconductor wafer, and controlling an operation of the semiconductor processing apparatus based on information about the temperature of the semiconductor wafer which is set.
摘要翻译：一种用于操作半导体处理装置的方法，其使用其中产生的等离子体等离子体处理安装在放置在容器中的台上的半导体晶片。该方法包括设置半导体晶片的温度，并且基于关于设置的半导体晶片的温度的信息来控制半导体处理装置的操作。

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