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1. 发明授权

US07183715B2 Method for operating a semiconductor processing apparatus 失效
标题翻译：操作半导体处理装置的方法
公开(公告)号：US07183715B2
公开(公告)日：2007-02-27
申请号：US10997888
申请日：2004-11-29
申请人： Seiichiro Kanno , Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Hideki Kihara , Hideyuki Yamamoto
发明人： Seiichiro Kanno , Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Hideki Kihara , Hideyuki Yamamoto
IPC分类号： H01J7/24
CPC分类号： H01L21/67253 , H01J37/32082 , H01J37/3299 , H01J2237/334 , H01L21/67069 , H01L21/67248
摘要： A method for operating a semiconductor processing apparatus that plasma-processes a semiconductor wafer mounted on a stage placed in a container using a plasma generated therein. The method includes setting a temperature of the semiconductor wafer, and controlling an operation of the semiconductor processing apparatus based on information about the temperature of the semiconductor wafer which is set.
摘要翻译：一种用于操作半导体处理装置的方法，其使用其中产生的等离子体等离子体处理安装在放置在容器中的台上的半导体晶片。该方法包括设置半导体晶片的温度，并且基于关于设置的半导体晶片的温度的信息来控制半导体处理装置的操作。

2. 发明授权

US06825617B2 Semiconductor processing apparatus 失效
标题翻译：半导体处理装置
公开(公告)号：US06825617B2
公开(公告)日：2004-11-30
申请号：US10373711
申请日：2003-02-27
申请人： Seiichiro Kanno , Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Hideki Kihara , Hideyuki Yamamoto
发明人： Seiichiro Kanno , Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Hideki Kihara , Hideyuki Yamamoto
IPC分类号： H01J724
CPC分类号： H01L21/67253 , H01J37/32082 , H01J37/3299 , H01J2237/334 , H01L21/67069 , H01L21/67248
摘要： A semiconductor processing apparatus that processes a semiconductor wafer disposed in a process chamber of a processing apparatus main unit includes a setting unit for enabling a user to set a temperature of the semiconductor wafer and control unit for controlling a processing of the semiconductor wafer based on the temperature of the semiconductor wafer set by the setting unit.
摘要翻译：处理设置在处理设备主单元的处理室中的半导体晶片的半导体处理设备包括：设置单元，用于使用户能够设置用于控制半导体晶片的处理的半导体晶片和控制单元的温度，由设置单元设置的半导体晶片的温度。

3. 发明申请

US20050089625A1 Method for operating a semiconductor processing apparatus 失效
标题翻译：操作半导体处理装置的方法
公开(公告)号：US20050089625A1
公开(公告)日：2005-04-28
申请号：US10997888
申请日：2004-11-29
申请人： Seiichiro Kanno , Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Hideki Kihara , Hideyuki Yamamoto
发明人： Seiichiro Kanno , Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Hideki Kihara , Hideyuki Yamamoto
IPC分类号： H01L21/00 , B05D1/00 , H01L21/31 , H01L21/469
CPC分类号： H01L21/67253 , H01J37/32082 , H01J37/3299 , H01J2237/334 , H01L21/67069 , H01L21/67248
摘要： A method for operating a semiconductor processing apparatus that plasma-processes a semiconductor wafer mounted on a stage placed in a container using a plasma generated therein. The method includes setting a temperature of the semiconductor wafer, and controlling an operation of the semiconductor processing apparatus based on information about the temperature of the semiconductor wafer which is set.
摘要翻译：一种用于操作半导体处理装置的方法，其使用其中产生的等离子体等离子体处理安装在放置在容器中的台上的半导体晶片。该方法包括设置半导体晶片的温度，并且基于关于设置的半导体晶片的温度的信息来控制半导体处理装置的操作。

4. 发明授权

US06895179B2 Wafer stage for wafer processing apparatus 失效
标题翻译：晶圆处理装置的晶圆台
公开(公告)号：US06895179B2
公开(公告)日：2005-05-17
申请号：US10658280
申请日：2003-09-10
申请人： Seiichiro Kanno , Ken Yoshioka , Ryoji Nishio , Saburou Kanai , Hideki Kihara , Koji Okuda
发明人： Seiichiro Kanno , Ken Yoshioka , Ryoji Nishio , Saburou Kanai , Hideki Kihara , Koji Okuda
IPC分类号： H01L21/00 , H01L21/683 , F26B19/00
CPC分类号： H01L21/67109 , H01L21/6831
摘要： A wafer stage for use in a wafer processing apparatus having a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate as attached onto the liquid cooling jacket and having therein a heater and an electrode for an electrostatic chuck. The wafer stage enables performance of wafer processing while letting a wafer be mounted on the ceramic plate. The liquid cooling jacket enables attachment of the ceramic plate through a gap for circulation of a coolant gas as formed over the liquid cooling jacket, and a heat resistant seal material containing therein an elastic body for sealing the coolant gas between the liquid cooling jacket and the ceramic plate.
摘要翻译：一种用于晶片处理装置的晶片台，其具有附接到液体冷却套上的具有内置冷却剂液体循环路径的液体冷却套和陶瓷板，并且其中具有用于静电卡盘的加热器和电极。晶片台可以在将晶片安装在陶瓷板上的同时实现晶片处理的性能。液体冷却套管能够通过用于在液体冷却套上形成的冷却剂气体的循环的间隙来安装陶瓷板，以及耐热密封材料，其中容纳有用于将液体冷却套和第二组件之间的冷却剂气体密封的弹性体陶瓷板。

5. 发明授权

US06646233B2 Wafer stage for wafer processing apparatus and wafer processing method 失效
标题翻译：晶圆处理装置的晶片台和晶圆加工方法
公开(公告)号：US06646233B2
公开(公告)日：2003-11-11
申请号：US10087747
申请日：2002-03-05
申请人： Seiichiro Kanno , Ken Yoshioka , Ryoji Nishio , Saburou Kanai , Hideki Kihara , Koji Okuda
发明人： Seiichiro Kanno , Ken Yoshioka , Ryoji Nishio , Saburou Kanai , Hideki Kihara , Koji Okuda
IPC分类号： F27B514
CPC分类号： H01L21/67109 , H01L21/6831
摘要： A wafer stage for use in wafer processing apparatus which comprises a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate that is attached onto the liquid cooling jacket and has therein a heater and an electrode for electrostatic chuck use, the wafer stage performing wafer processing while letting a wafer be mounted on the ceramic plate, wherein the liquid cooling jacket permits attachment of the ceramic plate through a coolant gas circulating gap as formed over the liquid cooling jacket while disposing between the liquid cooling jacket and the ceramic plate more than one heat resistant seal material containing therein an elastic body for sealing the coolant gas.
摘要翻译：用于晶片处理装置的晶片台，其包括具有内置冷却剂液体循环路径的液体冷却套和附接到液体冷却套上的陶瓷板，并且其中具有用于静电卡盘的加热器和电极，在将晶片安装在陶瓷板上的同时进行晶片处理的晶片台，其中液体冷却套管允许通过在液体冷却套上形成的冷却剂气体循环间隙来连接陶瓷板，同时设置在液体冷却套和陶瓷之间在其上容纳多个耐热密封材料，其中包含用于密封冷却剂气体的弹性体。

6. 发明授权

US07138606B2 Wafer processing method 失效
标题翻译：晶圆加工方法
公开(公告)号：US07138606B2
公开(公告)日：2006-11-21
申请号：US10658281
申请日：2003-09-10
申请人： Seiichiro Kanno , Ken Yoshioka , Ryoji Nishio , Saburou Kanai , Hideki Kihara , Koji Okuda
发明人： Seiichiro Kanno , Ken Yoshioka , Ryoji Nishio , Saburou Kanai , Hideki Kihara , Koji Okuda
IPC分类号： F27B5/14
CPC分类号： H01L21/67109 , H01L21/6831
摘要： A wafer processing method for use with a wafer processing apparatus having a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate as attached onto the liquid cooling jacket and having therein a heater and an electrode for an electrostatic chuck. The method enables performance of wafer processing while letting a wafer be mounted on the ceramic plate by a wafer transport. The method includes causing the wafer transport to transport the wafer onto the ceramic plate, pre-heating the wafer while the wafer is held on the ceramic plate for a predetermined length of time, and mounting the preheated wafer on the ceramic plate.
摘要翻译：一种与具有内置冷却剂液体循环路径的液体冷却套和安装在液体冷却套上的陶瓷板的晶片处理装置一起使用的晶片处理方法，其中具有加热器和用于静电卡盘的电极。该方法能够通过晶片输送将晶片安装在陶瓷板上，从而实现晶片处理。该方法包括使晶片输送将晶片输送到陶瓷板上，在将晶片保持在陶瓷板上预定时间长度的同时预热晶片，并将预热的晶片安装在陶瓷板上。

7. 发明授权

US06716301B2 Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe 失效
公开(公告)号：US06716301B2
公开(公告)日：2004-04-06
申请号：US09799527
申请日：2001-03-07
申请人： Seiichiro Kanno , Ryoji Nishio , Tsutomu Tetsuka , Junichi Tanaka , Hideyuki Yamamoto , Kazuyuki Ikenaga , Saburou Kanai
发明人： Seiichiro Kanno , Ryoji Nishio , Tsutomu Tetsuka , Junichi Tanaka , Hideyuki Yamamoto , Kazuyuki Ikenaga , Saburou Kanai
IPC分类号： H01L21306
CPC分类号： H01J37/32174 , H01J37/321 , H01J37/3299 , H01L21/31116
摘要： A semiconductor manufacturing apparatus includes a unit for generating a plasma in a vacuum chamber, a wafer stage for holding a semiconductor wafer introduced into the vacuum chamber, a high frequency power supply for applying a high frequency voltage to the wafer stage, a wafer voltage probe for measuring a voltage of the semiconductor wafer at a rear surface of the semiconductor wafer, a current and voltage probe for measuring at least one of a voltage and a current applied to the wafer stage from the high frequency power supply, and a control portion. The control portion obtains an impedance from the semiconductor wafer to earth through the plasma on the basis of a voltage value of the semiconductor wafer measured by the wafer voltage probe, and a voltage value or a current value measured by the current and voltage probe, and performs a processing based on the obtained impedance.

8. 发明授权

US06771481B2 Plasma processing apparatus for processing semiconductor wafer using plasma 有权
标题翻译：使用等离子体处理半导体晶片的等离子体处理装置
公开(公告)号：US06771481B2
公开(公告)日：2004-08-03
申请号：US09796494
申请日：2001-03-02
申请人： Ryoji Nishio , Seiichiro Kanno , Hideyuki Yamamoto , Akira Kagoshima
发明人： Ryoji Nishio , Seiichiro Kanno , Hideyuki Yamamoto , Akira Kagoshima
IPC分类号： B23B3128
CPC分类号： H01J37/32082 , H01J37/32706 , H01J37/3299 , Y10T29/49124 , Y10T279/23
摘要： A plasma processing apparatus comprises: a body that comprises a vacuum processing chamber with a wafer stage on which a semiconductor wafer is held, a plasma producing unit for producing plasma within the vacuum chamber, and a high frequency source for applying a high frequency bias voltage to the wafer stage. A control unit controls various parameters of the body of the plasma processing apparatus. The control unit comprises a detecting unit for detecting the high frequency voltage or high frequency current applied to the wafer stage and for calculating a difference in phase between the high frequency voltage and the high frequency current, and a unit for obtaining a characteristic of the plasma or an electric characteristic of the plasma processing apparatus based on the detected high frequency voltage, the detected high frequency current, and the obtained difference in phase.
摘要翻译：一种等离子体处理装置包括：主体，其包括具有保持半导体晶片的晶片台的真空处理室，用于在真空室内产生等离子体的等离子体产生单元和用于施加高频偏置电压的高频源到晶片台。控制单元控制等离子体处理装置的主体的各种参数。控制单元包括用于检测施加到晶片台的高频电压或高频电流并用于计算高频电压和高频电流之间的相位差的检测单元，以及用于获得等离子体的特性的单元或基于检测到的高频电压，检测到的高频电流和所获得的相位差的等离子体处理装置的电特性。

9. 发明授权

US06747239B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US06747239B2
公开(公告)日：2004-06-08
申请号：US10437030
申请日：2003-05-14
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Ryoji Nishio , Seiichiro Kanno , Hideyuki Yamamoto
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Ryoji Nishio , Seiichiro Kanno , Hideyuki Yamamoto
IPC分类号： B23K1000
CPC分类号： H01L21/67253 , H01J37/32935
摘要： A plasma processing apparatus having a process chamber to process specimens; a status detecting unit for detecting the internal processing status of the process chamber and outputting a plurality of signals; and a signal converting unit for extracting an arbitrary number of signal processing filters from a signal filter database using a signal filter selector and creating an arbitrary number of device status signals. The signal converting unit creates fewer effective device status signals of a time series from the output signals.
摘要翻译：一种等离子体处理装置，具有处理试样的处理室; 状态检测单元，用于检测处理室的内部处理状态并输出多个信号; 以及信号转换单元，用于使用信号滤波器选择器从信号滤波器数据库中提取任意数量的信号处理滤波器，并创建任意数量的装置状态信号。信号转换单元从输出信号产生一个时间序列的有效装置状态信号。

10. 发明授权

US06590179B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US06590179B2
公开(公告)日：2003-07-08
申请号：US09791732
申请日：2001-02-26
申请人： Junichi Tanaka , Hiroyuki Kitsunai , Ryoji Nishio , Seiichiro Kanno , Hideyuki Yamamoto
发明人： Junichi Tanaka , Hiroyuki Kitsunai , Ryoji Nishio , Seiichiro Kanno , Hideyuki Yamamoto
IPC分类号： B23K1000
CPC分类号： H01L21/67253 , H01J37/32935
摘要： A plasma processing apparatus having a process chamber to process specimens, a status detecting means for detecting the internal processing status of said process chamber and outputting a plurality of signals, and signal converting means for extracting an arbitrary number of signal processing filters from a signal filter database using a signal filter selecting means and creating an arbitrary number of device status signals. The signal converting means creates fewer effective device status signals of a time series from said output signals.
摘要翻译：一种具有处理试样的处理室的等离子体处理装置，检测所述处理室的内部处理状态并输出多个信号的状态检测装置，以及从信号滤波器提取任意数量的信号处理滤波器的信号转换装置数据库，使用信号滤波器选择装置并创建任意数量的装置状态信号。信号转换装置从所述输出信号产生一个时间序列的有效装置状态信号。

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