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21. 发明授权

US09570328B2 Substrate support for use with multi-zonal heating sources 有权
标题翻译：用于多区域加热源的基板支撑
公开(公告)号：US09570328B2
公开(公告)日：2017-02-14
申请号：US13155943
申请日：2011-06-08
申请人： Kailash Patalay , Errol Sanchez
发明人： Kailash Patalay , Errol Sanchez
IPC分类号： F24J3/00 , H01L21/67 , H01L21/687
CPC分类号： H01L21/67115 , H01L21/68735 , H01L21/68742
摘要： Apparatus for use with multi-zonal heating sources are provided. In some embodiments, a substrate support may have a pocket disposed in a surface of the substrate support and a lip disposed about the pocket to receive an edge of a substrate and to support the substrate over the pocket such that a gap is defined between a pocket surface and a backside surface of the substrate when the substrate is disposed on the lip; a plurality of features to operate in combination with a plurality of heating zones provided by a multi-zonal heating source to provide a desired temperature profile on a frontside surface of a substrate when the substrate is disposed on the lip, and wherein the plurality of features are alternatingly disposed above and below a baseline surface profile of the pocket surface in a radial direction from a central axis of the substrate support.
摘要翻译：提供了用于多区域加热源的设备。在一些实施例中，衬底支撑件可以具有设置在衬底支撑件的表面中的口袋和设置在口袋周围的唇缘，以容纳衬底的边缘并且将衬底支撑在口袋上，使得在口袋当衬底设置在唇缘上时，衬底的表面和背面; 多个特征，其与由多区域加热源提供的多个加热区组合操作，以在基板设置在唇缘上时在基板的前侧表面上提供期望的温度分布，并且其中多个特征交替地设置在从衬底支撑件的中心轴线的径向方向上的袋表面的基线表面轮廓之上和之下。

22. 发明申请

US20120282714A1 SUSCEPTOR WITH BACKSIDE AREA OF CONSTANT EMISSIVITY 有权
标题翻译：具有不断发生的背景区域的障碍物
公开(公告)号：US20120282714A1
公开(公告)日：2012-11-08
申请号：US13530238
申请日：2012-06-22
申请人： Errol Sanchez , David K. Carlson , Craig Metzner
发明人： Errol Sanchez , David K. Carlson , Craig Metzner
IPC分类号： H01L21/66
CPC分类号： H01L21/68757 , C23C16/4581 , C23C16/481 , C23C16/52
摘要： Methods and apparatus for providing constant emissivity of the backside of susceptors are described. Provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; and locating the wafer on a support surface of the susceptor plate. The method can further comprise selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method can also further comprise selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer.
摘要翻译：描述了用于提供感受器背面恒定发射率的方法和装置。提供了一种方法，包括：在沉积室中提供感受器，所述基座包括基座板和包括氧化物，氮化物，氮氧化物或其组合的层，所述层在反应性工艺气体存在下是稳定的; 以及将所述晶片定位在所述基座板的支撑表面上。该方法还可以包括在晶片的表面上选择性地沉积外延层或非外延层。该方法还可以进一步包括选择性蚀刻以维持氧化物，氮化物，氧氮化物或其组合层。

23. 发明授权

US08226770B2 Susceptor with backside area of constant emissivity 有权
标题翻译：受体具有不断发射率的背面积
公开(公告)号：US08226770B2
公开(公告)日：2012-07-24
申请号：US11744760
申请日：2007-05-04
申请人： Errol Sanchez , David K. Carlson , Craig Metzner
发明人： Errol Sanchez , David K. Carlson , Craig Metzner
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/68757 , C23C16/4581 , C23C16/481 , C23C16/52
摘要： Methods and apparatus for providing constant emissivity of the backside of susceptors are provided. Provided is a susceptor comprising: a susceptor plate having a surface for supporting a wafer and a backside surface opposite the wafer supporting surface; a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof located on the backside surface of the susceptor plate, the layer being stable in the presence of a reactive process gas. The layer comprises, for example, silicon dioxide, silicon nitride, silicon oxynitride, or combinations thereof. Also provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; locating the wafer on a support surface of the susceptor plate. The method can further comprises selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method further comprises selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer.
摘要翻译：提供了用于提供感受器背面恒定发射率的方法和装置。本发明提供一种基座，其特征在于，包括：具有用于支撑晶片的表面的基座板和与所述晶片支撑面相对的背面; 位于基座板的背面上的包含氧化物，氮化物，氧氮化物或其组合的层，该层在反应性工艺气体存在下是稳定的。该层包括例如二氧化硅，氮化硅，氮氧化硅或其组合。还提供了一种方法，其包括：在沉积室中提供感受器，所述基座包括基座板和包含氧化物，氮化物，氧氮化物或其组合的层，所述层在反应性工艺气体存在下是稳定的 ; 将晶片定位在基座板的支撑表面上。该方法还可以包括在晶片的表面上选择性地沉积外延层或非外延层。该方法还包括选择性蚀刻以维持氧化物，氮化物，氧氮化物或其组合层。

24. 发明授权

US07737007B2 Methods to fabricate MOSFET devices using a selective deposition process 有权
标题翻译：使用选择性沉积工艺制造MOSFET器件的方法
公开(公告)号：US07737007B2
公开(公告)日：2010-06-15
申请号：US12201681
申请日：2008-08-29
申请人： Arkadii V. Samoilov , Yihwan Kim , Errol Sanchez , Nicholas C. Dalida
发明人： Arkadii V. Samoilov , Yihwan Kim , Errol Sanchez , Nicholas C. Dalida
IPC分类号： H01L21/20
CPC分类号： H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/78 , H01L29/7848
摘要： In one embodiment, a method for forming a silicon-based material on a substrate having dielectric materials and source/drain regions thereon within a process chamber is provided which includes exposing the substrate to a first process gas comprising silane, methylsilane, a first etchant, and hydrogen gas to deposit a first silicon-containing layer thereon. The first silicon-containing layer may be selectively deposited on the source/drain regions of the substrate while the first silicon-containing layer may be etched away on the surface of the dielectric materials of the substrate. Subsequently, the process further provides exposing the substrate to a second process gas comprising dichlorosilane and a second etchant to deposit a second silicon-containing layer selectively over the surface of the first silicon-containing layer on the substrate.
摘要翻译：在一个实施例中，提供了一种在处理室内具有电介质材料和源极/漏极区域的衬底上形成硅基材料的方法，其包括将衬底暴露于包含硅烷，甲基硅烷，第一蚀刻剂的第一工艺气体，和氢气以在其上沉积第一含硅层。第一含硅层可以选择性地沉积在衬底的源极/漏极区上，同时第一含硅层可被蚀刻掉在衬底的电介质材料的表面上。随后，该方法进一步提供将衬底暴露于包含二氯硅烷和第二蚀刻剂的第二工艺气体，以在衬底上的第一含硅层的表面上选择性地沉积第二含硅层。

25. 发明授权

US07732269B2 Method of ultra-shallow junction formation using Si film alloyed with carbon 有权
标题翻译：使用与碳合金化的Si膜的超浅结结形成方法
公开(公告)号：US07732269B2
公开(公告)日：2010-06-08
申请号：US11742932
申请日：2007-05-01
申请人： Yihwan Kim , Majeed A. Foad , Yonah Cho , Zhiyuan Ye , Ali Zojaji , Errol Sanchez
发明人： Yihwan Kim , Majeed A. Foad , Yonah Cho , Zhiyuan Ye , Ali Zojaji , Errol Sanchez
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L29/7848 , H01L21/02378 , H01L21/02381 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02664 , H01L21/2233 , H01L21/26513 , H01L29/165 , H01L29/66287 , H01L29/6656 , H01L29/66628 , H01L29/66636
摘要： A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the substrate. The silicon carbon layer is exposed to a dopant. The substrate is heated to a temperature greater than 950° C. so as to cause substantial annealing of the dopant within the silicon carbon layer. In certain embodiments the substrate is heated to a temperature between about 1000° C. and about 1100°. In certain embodiments the substrate is heated to a temperature between about 1030° C. and 1050° C. In certain embodiments, a structure having an abrupt p-n junction is provided.
摘要翻译：提供了一种在基板上形成超浅结的方法。在某些实施例中，提供了在衬底上形成超浅结的方法。将基底放置在处理室中。硅基层沉积在基底上。硅碳层暴露于掺杂剂。将基板加热至大于950℃的温度，以使硅碳层内的掺杂剂发生实际退火。在某些实施方案中，将基材加热至约1000℃至约1100℃之间的温度。在某些实施方案中，将衬底加热至约1030℃至1050℃之间的温度。在某些实施方案中，提供具有突变p-n结的结构。

26. 发明授权

US07439142B2 Methods to fabricate MOSFET devices using a selective deposition process 有权
标题翻译：使用选择性沉积工艺制造MOSFET器件的方法
公开(公告)号：US07439142B2
公开(公告)日：2008-10-21
申请号：US11539775
申请日：2006-10-09
申请人： Arkadii V. Samoilov , Yihwan Kim , Errol Sanchez , Nicholas C. Dalida
发明人： Arkadii V. Samoilov , Yihwan Kim , Errol Sanchez , Nicholas C. Dalida
IPC分类号： H01L21/336
CPC分类号： H01L21/823814 , H01L21/0245 , H01L21/0251 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L21/28044 , H01L21/28114 , H01L21/823807 , H01L29/165 , H01L29/66242 , H01L29/665 , H01L29/66545 , H01L29/6656 , H01L29/66628 , H01L29/66636 , H01L29/78 , H01L29/7834 , H01L29/7848
摘要： In one embodiment, a method for forming a silicon-based material on a substrate having dielectric materials and source/drain regions thereon within a process chamber is provided which includes exposing the substrate to a first process gas comprising silane, methylsilane, a first etchant, and hydrogen gas to deposit a first silicon-containing layer thereon. The first silicon-containing layer may be selectively deposited on the source/drain regions of the substrate while the first silicon-containing layer may be etched away on the surface of the dielectric materials of the substrate. Subsequently, the process further provides exposing the substrate to a second process gas comprising dichlorosilane and a second etchant to deposit a second silicon-containing layer selectively over the surface of the first silicon-containing layer on the substrate.
摘要翻译：在一个实施例中，提供了一种在处理室内具有电介质材料和源极/漏极区域的衬底上形成硅基材料的方法，其包括将衬底暴露于包含硅烷，甲基硅烷，第一蚀刻剂的第一工艺气体，和氢气以在其上沉积第一含硅层。第一含硅层可以被选择性地沉积在衬底的源极/漏极区上，同时第一含硅层可被蚀刻掉在衬底的电介质材料的表面上。随后，该方法进一步提供将衬底暴露于包含二氯硅烷和第二蚀刻剂的第二工艺气体，以在衬底上的第一含硅层的表面上选择性地沉积第二含硅层。

27. 发明授权

US07838431B2 Method for surface treatment of semiconductor substrates 有权
标题翻译：半导体衬底的表面处理方法
公开(公告)号：US07838431B2
公开(公告)日：2010-11-23
申请号：US12143606
申请日：2008-06-20
申请人： Errol Sanchez
发明人： Errol Sanchez
IPC分类号： H01L21/00
CPC分类号： H01L21/268 , B23K26/1224 , H01L21/3221 , H01L21/67115
摘要： Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method of processing a substrate may include providing a substrate having at least one of a defect or a contaminant disposed on or near a surface of the substrate; and selectively annealing a portion of the substrate with a laser beam in the presence of a process gas comprising hydrogen. The laser beam may be moved over the substrate or continuously, or in a stepwise fashion. The laser beam may be applied in a continuous wave or pulsed mode. The process gas may further comprise an inert gas, such as, at least one of helium, argon, or nitrogen. A layer of material may be subsequently deposited atop the annealed substrate.
摘要翻译：本文提供了用于处理衬底的方法和设备。在一些实施例中，处理衬底的方法可以包括提供具有设置在衬底的表面上或附近的缺陷或污染物中的至少一种的衬底; 以及在包含氢气的工艺气体存在下用激光束选择性地退火所述衬底的一部分。激光束可以在衬底上或连续地或以逐步的方式移动。可以以连续波或脉冲模式施加激光束。工艺气体还可包括惰性气体，例如氦气，氩气或氮气中的至少一种气体。随后可以将一层材料沉积在退火的衬底上。

28. 发明申请

US20090011578A1 METHODS TO FABRICATE MOSFET DEVICES USING A SELECTIVE DEPOSITION PROCESS 有权
标题翻译：使用选择性沉积工艺制作MOSFET器件的方法
公开(公告)号：US20090011578A1
公开(公告)日：2009-01-08
申请号：US12201681
申请日：2008-08-29
申请人： ARKADII V. SAMOILOV , Yihwan Kim , Errol Sanchez , Nicholas C. Dalida
发明人： ARKADII V. SAMOILOV , Yihwan Kim , Errol Sanchez , Nicholas C. Dalida
IPC分类号： H01L21/203
CPC分类号： H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/78 , H01L29/7848
摘要： In one embodiment, a method for forming a silicon-based material on a substrate having dielectric materials and source/drain regions thereon within a process chamber is provided which includes exposing the substrate to a first process gas comprising silane, methylsilane, a first etchant, and hydrogen gas to deposit a first silicon-containing layer thereon. The first silicon-containing layer may be selectively deposited on the source/drain regions of the substrate while the first silicon-containing layer may be etched away on the surface of the dielectric materials of the substrate. Subsequently, the process further provides exposing the substrate to a second process gas comprising dichlorosilane and a second etchant to deposit a second silicon-containing layer selectively over the surface of the first silicon-containing layer on the substrate.
摘要翻译：在一个实施例中，提供了一种在处理室内具有电介质材料和源极/漏极区的衬底上形成硅基材料的方法，其包括将衬底暴露于包含硅烷，甲基硅烷，第一蚀刻剂的第一工艺气体，和氢气以在其上沉积第一含硅层。第一含硅层可以选择性地沉积在衬底的源极/漏极区上，同时第一含硅层可被蚀刻掉在衬底的电介质材料的表面上。随后，该方法进一步提供将衬底暴露于包含二氯硅烷和第二蚀刻剂的第二工艺气体，以在衬底上的第一含硅层的表面上选择性地沉积第二含硅层。

29. 发明申请

US20070256627A1 METHOD OF ULTRA-SHALLOW JUNCTION FORMATION USING SI FILM ALLOYED WITH CARBON 有权
标题翻译：使用与碳合金制成的超薄结块形成方法
公开(公告)号：US20070256627A1
公开(公告)日：2007-11-08
申请号：US11742932
申请日：2007-05-01
申请人： YIHWAN KIM , Majeed Foad , Yonah Cho , Zhiyuan Ye , Ali Zojaji , Errol Sanchez
发明人： YIHWAN KIM , Majeed Foad , Yonah Cho , Zhiyuan Ye , Ali Zojaji , Errol Sanchez
IPC分类号： C30B23/00 , C23C16/00 , B05D3/02 , C30B25/00
CPC分类号： H01L29/7848 , H01L21/02378 , H01L21/02381 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02664 , H01L21/2233 , H01L21/26513 , H01L29/165 , H01L29/66287 , H01L29/6656 , H01L29/66628 , H01L29/66636
摘要： A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the substrate. The silicon carbon layer is exposed to a dopant. The substrate is heated to a temperature greater than 950° C. so as to cause substantial annealing of the dopant within the silicon carbon layer. In certain embodiments the substrate is heated to a temperature between about 1000° C. and about 1100°. In certain embodiments the substrate is heated to a temperature between about 1030° C. and 1050° C. In certain embodiments, a structure having an abrupt p-n junction is provided.
摘要翻译：提供了一种在基板上形成超浅结的方法。在某些实施例中，提供了在衬底上形成超浅结的方法。将基底放置在处理室中。硅基层沉积在基底上。硅碳层暴露于掺杂剂。将基板加热至大于950℃的温度，以使硅碳层内的掺杂剂发生实际退火。在某些实施方案中，将基材加热至约1000℃至约1100℃之间的温度。在某些实施方案中，将衬底加热至约1030℃至1050℃之间的温度。在某些实施方案中，提供具有突变p-n结的结构。

30. 发明申请

US20050079692A1 Methods to fabricate MOSFET devices using selective deposition process 有权
标题翻译：使用选择性沉积工艺制造MOSFET器件的方法
公开(公告)号：US20050079692A1
公开(公告)日：2005-04-14
申请号：US10845984
申请日：2004-05-14
申请人： Arkadii Samoilov , Yihwan Kim , Errol Sanchez , Nicholas Dalida
发明人： Arkadii Samoilov , Yihwan Kim , Errol Sanchez , Nicholas Dalida
IPC分类号： H01L21/20 , H01L21/205 , H01L21/28 , H01L21/331 , H01L21/336 , H01L21/8238 , H01L21/36
CPC分类号： H01L21/823814 , H01L21/0245 , H01L21/0251 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L21/28044 , H01L21/28114 , H01L21/823807 , H01L29/165 , H01L29/66242 , H01L29/665 , H01L29/66545 , H01L29/6656 , H01L29/66628 , H01L29/66636 , H01L29/78 , H01L29/7834 , H01L29/7848
摘要： In one embodiment, a method for fabricating a silicon-based device on a substrate surface is provided which includes depositing a first silicon-containing layer by exposing the substrate surface to a first process gas comprising Cl2SiH2, a germanium source, a first etchant and a carrier gas and depositing a second silicon-containing layer by exposing the first silicon-containing layer to a second process gas comprising SiH4 and a second etchant. In another embodiment, a method for depositing a silicon-containing material on a substrate surface is provided which includes depositing a first silicon-containing layer on the substrate surface with a first germanium concentration of about 15 at % or more. The method further provides depositing on the first silicon-containing layer a second silicon-containing layer wherein a second germanium concentration of about 15 at % or less, exposing the substrate surface to air to form a native oxide layer, removing the native oxide layer to expose the second silicon-containing layer, and depositing a third silicon-containing layer on the second silicon-containing layer. In another embodiment, a method for depositing a silicon-containing material on a substrate surface is provided which includes depositing epitaxially a first silicon-containing layer on the substrate surface with a first lattice strain, and depositing epitaxially on the first silicon-containing layer a second silicon-containing layer with a second lattice strain greater than the first lattice strain.
摘要翻译：在一个实施例中，提供了一种在衬底表面上制造硅基器件的方法，其包括通过将衬底表面暴露于包括Cl 2 SiH 2，锗源，第一蚀刻剂和第二蚀刻剂的第一工艺气体来沉积第一含硅层载气并通过将第一含硅层暴露于包含SiH 4和第二蚀刻剂的第二工艺气体而沉积第二含硅层。在另一个实施例中，提供了一种用于在衬底表面上沉积含硅材料的方法，其包括以约15at％或更多的第一锗浓度在衬底表面上沉积第一含硅层。该方法进一步提供了在第一含硅层上沉积第二含硅层，其中第二锗浓度为约15原子％或更低，将基底表面暴露于空气中以形成天然氧化物层，将天然氧化物层去除暴露第二含硅层，并在第二含硅层上沉积第三含硅层。在另一个实施例中，提供了一种用于在衬底表面上沉积含硅材料的方法，其包括以第一晶格应变在衬底表面上外延沉积第一含硅层，并且在第一含硅层上外延沉积第二含硅层具有大于第一晶格应变的第二晶格应变。

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