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21. 发明授权

US06861299B2 Process for manufacturing thin film transistor on unannealed glass substrate 有权
标题翻译：在非退火玻璃基板上制造薄膜晶体管的工艺
公开(公告)号：US06861299B2
公开(公告)日：2005-03-01
申请号：US10404060
申请日：2003-04-02
申请人： Kazuhiko Horikoshi , Klyoshi Ogata , Takuo Tamura , Miwako Nakahara , Makoto Ohkura , Ryoji Oritsuki , Yasushi Nakano , Takeo Shiba
发明人： Kazuhiko Horikoshi , Klyoshi Ogata , Takuo Tamura , Miwako Nakahara , Makoto Ohkura , Ryoji Oritsuki , Yasushi Nakano , Takeo Shiba
IPC分类号： G02F1/1368 , G09F9/00 , G09F9/30 , G09F9/35 , H01L21/336 , H01L29/49 , H01L29/786 , H01L21/00 , H01L21/84
CPC分类号： H01L29/66757 , H01L29/4908 , H01L29/78603
摘要： Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500° C. or below to form a silicon oxide film of 4 to 20 nm thick on the surface of polycrystalline silicon. On account of this treatment, the level density at the interface between the gate-insulating layer and the channel layer can be made lower, and a thin-film transistor having less variations of characteristics can be formed on the unannealed glass substrate.
摘要翻译：使用廉价的未退火玻璃作为基材。掺杂有硼（B）或磷（P）的多晶硅膜的表面在臭氧处于500℃以下的处理温度下被氧化，在多晶的表面上形成厚度为4〜20nm的氧化硅膜硅。由于这种处理，可以使栅绝缘层和沟道层之间的界面处的电平密度更低，并且可以在非退火玻璃基板上形成具有较小特性变化的薄膜晶体管。

22. 发明授权

US06815717B2 Thin-film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US06815717B2
公开(公告)日：2004-11-09
申请号：US09988585
申请日：2001-11-20
申请人： Kazuhiko Horikoshi , Kiyoshi Ogata , Miwako Nakahara , Takuo Tamura , Yasushi Nakano , Ryoji Oritsuki , Toshihiko Itoga , Takahiro Kamo
发明人： Kazuhiko Horikoshi , Kiyoshi Ogata , Miwako Nakahara , Takuo Tamura , Yasushi Nakano , Ryoji Oritsuki , Toshihiko Itoga , Takahiro Kamo
IPC分类号： H01L2904
CPC分类号： H01L29/4908 , H01L29/66757
摘要： To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H2O or N2O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH3/hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer with a thickness of 4 nm or more at the surface of the polycrystalline silicon layer for forming a thin-film transistor having characteristics that are less varying on a glass substrate previously not annealed.

23. 发明授权

US06579754B2 Semiconductor memory device having ferroelectric film and manufacturing method thereof 失效
标题翻译：具有铁电体膜的半导体存储器件及其制造方法
公开(公告)号：US06579754B2
公开(公告)日：2003-06-17
申请号：US09850224
申请日：2001-05-08
申请人： Kazufumi Suenaga , Kiyoshi Ogata , Kazuhiko Horikoshi , Jun Tanaka , Hisayuki Kato , Keiichi Yoshizumi , Hisahiko Abe
发明人： Kazufumi Suenaga , Kiyoshi Ogata , Kazuhiko Horikoshi , Jun Tanaka , Hisayuki Kato , Keiichi Yoshizumi , Hisahiko Abe
IPC分类号： H01L218242
CPC分类号： H01L28/55 , G11C11/22 , H01L21/31691
摘要： The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of a crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).
摘要翻译：本发明是以制造成品率高的铁电薄膜电容器作为存储电容器的高质量的半导体存储器件，规定了电容器的铁电薄膜，晶体尺寸的相对标准偏差为13％，从而确保高的剩余极化值和小的薄膜疲劳（大的可重写数量）。

24. 发明授权

US06445025B2 Semiconductor memory device and manufacturing method thereof 失效
公开(公告)号：US06445025B2
公开(公告)日：2002-09-03
申请号：US09848420
申请日：2001-05-04
申请人： Kazufumi Suenaga , Kiyoshi Ogata , Kazuhiko Horikoshi , Jun Tanaka , Hisayuki Kato , Keiichi Yoshizumi , Hisahiko Abe
发明人： Kazufumi Suenaga , Kiyoshi Ogata , Kazuhiko Horikoshi , Jun Tanaka , Hisayuki Kato , Keiichi Yoshizumi , Hisahiko Abe
IPC分类号： H01L2976
CPC分类号： H01L28/55 , G11C11/22 , H01L21/31691
摘要： The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).

25. 发明授权

US06316798B1 Ferroelectric memory device and method for manufacturing the same 失效
标题翻译：铁电存储器件及其制造方法
公开(公告)号：US06316798B1
公开(公告)日：2001-11-13
申请号：US09331670
申请日：1999-06-23
申请人： Kiyoshi Ogata , Kazuhiko Horikoshi , Kazufumi Suenaga , Hisayuki Kato , Keiichi Yoshizumi , Masahito Yamazaki
发明人： Kiyoshi Ogata , Kazuhiko Horikoshi , Kazufumi Suenaga , Hisayuki Kato , Keiichi Yoshizumi , Masahito Yamazaki
IPC分类号： H01L2976
CPC分类号： H01L28/57 , H01L27/1203
摘要： A long life ferroelectric memory device using a thin ferroelectric film capacitor as a memory capacitor is obtained by disposing one or a plurality of degradation preventive layers on an upper protection electrode and an upper electrode 8 and a degradation preventive layer at the boundary of ferroelectric layer 7 /electrodes 6, 8, or providing a step of decreasing a modified layer at the boundary of ferroelectric layer 7/upper electrode 8. This provides a thin ferroelectric film capacitor which is subjected to less fatigue and imprinting and which has less degradation of the ferroelectric characteristic, thereby to attain a long life ferroelectric memory device.
摘要翻译：使用薄铁电薄膜电容器作为记忆电容器的长寿命铁电存储器件通过在铁氧体层7的边界上的上保护电极和上电极8以及劣化防止层上设置一个或多个降解防止层来获得 /电极6,8，或者提供在铁电层7 /上电极8的边界处减小改性层的步骤。这提供了一种薄铁电薄膜电容器，其经受较少的疲劳和压印，并且铁电体的劣化较少特性，从而获得长寿命的铁电存储器件。

26. 发明申请

US20110180707A1 MICROSAMPLING APPARATUS AND SAMPLING METHOD THEREOF 审中-公开
标题翻译：微型装置及其采样方法
公开(公告)号：US20110180707A1
公开(公告)日：2011-07-28
申请号：US13014054
申请日：2011-01-26
申请人： Takashi Iwanami , Kazuhiko Horikoshi
发明人： Takashi Iwanami , Kazuhiko Horikoshi
IPC分类号： G01N23/00
CPC分类号： G01N23/2202 , G01N2001/2873
摘要： A microsampling apparatus having a mechanism for enabling observation of a specimen and for contacting a potential-controllable conductive terminal with a sampling area and a sampling method thereof are provided. The mechanism includes an operation mechanism for precisely controlling, during the observation, a conductive terminal for contact with a periphery of the sampling area and movement of the terminal, a potential control mechanism for applying a voltage to the terminal, and a mechanism for coupling the terminal to ground and to the potential control mechanism. Contacting the terminal with a vicinity of the specimen allows charged particles that are created during the observation and sampling to escape via an earth lead. This makes it possible, in analysis preprocessing of a small insulator specimen of about 1 μm which causes device defects, to lessen electrification risks, thereby enabling sampling of only the target object without mixture of a surrounding base material.
摘要翻译：本发明提供了一种微采样装置，其具有能够观察样本并使电位可控导电端子与采样区域接触的机构及其采样方法。该机构包括用于在观察期间精确地控制用于与采样区域的周边接触的导电端子和端子的移动的操作机构，用于向端子施加电压的电位控制机构，以及用于将终端对地和潜在的控制机制。将端子与样品附近接触允许在观察和取样过程中产生的带电粒子通过接地引线逸出。这使得在大约1μm的小绝缘体样品的分析预处理中可能导致器件缺陷，从而降低电气化风险，从而能够仅对目标物体进行采样而不会混合周围的基底材料。

27. 发明授权

US07227186B2 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07227186B2
公开(公告)日：2007-06-05
申请号：US11123496
申请日：2005-05-04
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
IPC分类号： H01L21/20
CPC分类号： H01L29/66757 , H01L29/78675 , Y10S438/969
摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要翻译：激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。

28. 发明授权

US06995058B2 Semiconductor memory device and manufacturing method thereof 失效
公开(公告)号：US06995058B2
公开(公告)日：2006-02-07
申请号：US10183669
申请日：2002-06-28
申请人： Kazufumi Suenaga , Kiyoshi Ogata , Kazuhiko Horikoshi , Jun Tanaka , Hisayuki Kato , Keiichi Yoshizumi , Hisahiko Abe
发明人： Kazufumi Suenaga , Kiyoshi Ogata , Kazuhiko Horikoshi , Jun Tanaka , Hisayuki Kato , Keiichi Yoshizumi , Hisahiko Abe
IPC分类号： H01L21/8242
CPC分类号： H01L28/55 , G11C11/22 , H01L21/31691
摘要： The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).

29. 发明授权

US06906365B2 Ferroelectric memory device including an upper protection electrode 失效
标题翻译：铁电存储器件包括上保护电极
公开(公告)号：US06906365B2
公开(公告)日：2005-06-14
申请号：US09984609
申请日：2001-10-30
申请人： Kiyoshi Ogata , Kazuhiko Horikoshi , Kazufumi Suenaga , Hisayuki Kato , Keiichi Yoshizumi , Masahito Yamazaki
发明人： Kiyoshi Ogata , Kazuhiko Horikoshi , Kazufumi Suenaga , Hisayuki Kato , Keiichi Yoshizumi , Masahito Yamazaki
IPC分类号： H01L21/8247 , H01L21/00 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/12 , H01L29/76 , H01L29/788 , H01L29/792 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L28/57 , H01L27/1203
摘要： A long life ferroelectric memory device using a thin ferroelectric film capacitor as a memory capacitor is obtained by disposing a plurality of degradation preventive layers on an upper protection electrode and an upper electrode 8 and a degradation preventive layer at the boundary of ferroelectric layer 7/electrodes 6, 8, or providing a step of decreasing a modified layer at the boundary of ferroelectric layer 7/upper electrode 8. This provides a thin ferroelectric film capacitor which is subjected to less fatigue and imprinting and which has less degradation of ferroelectric characteristic to attain a long life ferroelectric memory device.
摘要翻译：通过在铁电层7 /电极的边界上的上保护电极和上电极8以及劣化防止层上设置多个防腐层，可获得使用薄铁电薄膜电容器作为记忆电容器的长寿命铁电存储器件或者提供在铁电层7 /上电极8的边界处减少改性层的步骤。这提供了一种薄的铁电薄膜电容器，其经受较少的疲劳和压印，并且其铁电特性的降低较少以获得长寿命的铁电存储器件。

30. 发明授权

US06767760B2 Process of manufacturing a thin-film transistor 有权
标题翻译：制造薄膜晶体管的工艺
公开(公告)号：US06767760B2
公开(公告)日：2004-07-27
申请号：US10166311
申请日：2002-06-11
申请人： Kazuhiko Horikoshi , Kiyoshi Ogata , Miwako Nakahara , Takuo Tamura , Yasushi Nakano , Ryoji Oritsuki , Toshihiko Itoga , Takahiro Kamo
发明人： Kazuhiko Horikoshi , Kiyoshi Ogata , Miwako Nakahara , Takuo Tamura , Yasushi Nakano , Ryoji Oritsuki , Toshihiko Itoga , Takahiro Kamo
IPC分类号： H01L2100
CPC分类号： H01L29/4908 , H01L29/66757
摘要： To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H2O or N2O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH3/hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer of 4 nm or more thick at the surface of the polycrystalline silicon layer for forming a thin-film transistor having less variations of characteristics on an unannealed glass substrate.
摘要翻译：通过用激光照射结晶的多晶硅层，在500℃以下的加工温度下进料由臭氧气体和H 2 O或N 2 O气体构成的混合气体，或者多晶硅层预先用溶液作为臭氧水或NH 3 /过氧化氢水溶液，随后用臭氧进行氧化处理，在多晶硅层的表面形成厚度为4nm以上的氧化硅层，以形成具有较小变化的薄膜晶体管未退火玻璃基板上的特性。

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