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    • 22. 发明授权
    • Chemically amplified positive resist composition
    • 化学放大正光刻胶组合物
    • US07893293B2
    • 2011-02-22
    • US12143268
    • 2008-06-20
    • Makoto AkitaIsao YoshidaKazuhiko Hashimoto
    • Makoto AkitaIsao YoshidaKazuhiko Hashimoto
    • C07C69/753C07C43/21C07C43/215C08F12/32G03F7/039
    • G03F7/0397C07C69/00C07C2603/24C08F212/14C08F212/34C08F220/18G03F7/0045G03F7/0046Y10S430/106
    • A chemically amplified positive resist composition comprising (A) a resin which comprises (i) a polymerization unit represented by the formula (I): wherein R7 represents a hydrogen atom etc., R8 represents a C1-C4 alkyl group, p represents an integer of 1 to 3, and q represents an integer of 0 to 2, (ii) at least one polymerization unit selected from a group consisting of a polymerization unit represented by the formula (II): wherein R1 represents a hydrogen atom etc., R2 represents a C1-C8 alkyl group and ring X represents an alicyclic hydrocarbon group, and a polymerization unit represented by the formula (IV): wherein R3 represents a hydrogen atom etc., R4 and R5 independently represents a hydrogen atom etc., R10 represents a C1-C6 alkyl group etc., and (iii) a polymerization unit represented by the formula (III): wherein R3, R4 and R5 are the same as defined above, E represents a divalent hydrocarbon group, G represents a single bond etc., Z represents a carbonyl group etc. and L represents an anthryl group etc., and (B) at least one acid generator.
    • 一种化学放大正型抗蚀剂组合物,其包含(A)树脂,其包含(i)由式(I)表示的聚合单元:其中R7表示氢原子等,R8表示C1-C4烷基,p表示整数 为1〜3,q为0〜2的整数,(ii)至少一种选自由式(II)表示的聚合单元的聚合单元:其中,R1表示氢原子等,R2 代表C1-C8烷基,X代表脂环族烃基,和由式(Ⅳ)表示的聚合单元:其中R3表示氢原子等,R4和R5独立地表示氢原子等,R10表示 C 1 -C 6烷基等,和(iii)由式(III)表示的聚合单元:其中R3,R4和R5与上述定义相同,E表示二价烃基,G表示单键等 Z表示羰基等,L r 表示蒽基等,和(B)至少一种酸发生剂。
    • 30. 发明授权
    • Method of producing a stencil mask
    • 生产模板掩模的方法
    • US5401932A
    • 1995-03-28
    • US13100
    • 1993-02-03
    • Kazuhiko HashimotoMasayuki EndoMasaru Sasago
    • Kazuhiko HashimotoMasayuki EndoMasaru Sasago
    • B23H9/00B23H9/14G03F1/20B23H1/00G03F1/16
    • G03F1/20B23H9/00B23H9/14
    • The reverse side of a substrate made of stainless steel is subjected to electro-discharge machining using a thick electrode having a diameter of about 10 .mu.m, thus selectively etching other part than the edge of the reverse side of the substrate. This electro-discharge machining causes the other part than the edge of the substrate to be thinned to a thickness of about 10 .mu.m. The surface of the substrate thus thinned is subjected to electro-discharge machining using a slender electrode having a diameter of about 3 .mu.m, thus forming a pattern having a predetermined configuration in the surface of the substrate. Further, the surface of the substrate is etched with the use of the slender electrode, so that the pattern of the silicon substrate is pierced, thus forming a pattern having vertical through-holes. Thus, by using, as a mask material, a substrate solely made of stainless steel as it is, there can be produced a stencil mask which is excellent in mechanical strength and thermal stability and which is not thermally distorted.
    • 使用直径约10μm的厚电极对由不锈钢制成的基板的背面进行放电加工,从而选择性地蚀刻比衬底背面的其它部分的其它部分。 这种放电加工使得除了衬底的边缘之外的其它部分被减薄到约10μm的厚度。 使用直径约3μm的细长电极对如此减薄的基板的表面进行放电加工,从而在基板的表面形成具有预定构造的图案。 此外,利用细长的电极蚀刻衬底的表面,使得硅衬底的图案被刺穿,从而形成具有垂直通孔的图案。 因此,通过使用仅由不锈钢制成的基材作为掩模材料,可以制造机械强度和热稳定性优异且不发生热变形的模板掩模。