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21. 发明授权

US06449871B1 Semiconductor process chamber having improved gas distributor 有权
标题翻译：具有改进的气体分配器的半导体处理室
公开(公告)号：US06449871B1
公开(公告)日：2002-09-17
申请号：US09657997
申请日：2000-09-08
申请人： Arnold Kholodenko , Dmitry Lubomirsky , Guang-Jye Shiau , Peter K. Loewenhardt , Shamouil Shamouilian
发明人： Arnold Kholodenko , Dmitry Lubomirsky , Guang-Jye Shiau , Peter K. Loewenhardt , Shamouil Shamouilian
IPC分类号： F26B334
CPC分类号： H01J37/32449 , H01J37/3244
摘要： A process chamber 25 for processing a semiconductor substrate, comprises a support for supporting a substrate 50. A gas distributor 90 provided for introducing process gas into the chamber 25, comprises a gas nozzle for injecting process gas at an inclined angle relative to a plane of the substrate 50, into the chamber 25. Optionally, a gas flow controller 100 controls and pulses the flow of process gas through one or more gas nozzles 140. An exhaust is used to exhaust the process gas from the chamber 25.
摘要翻译：用于处理半导体衬底的处理室25包括用于支撑衬底50的支撑件。用于将工艺气体引入腔室25中的气体分配器90包括用于将处理气体以相对于衬底50进入腔25.可选地，气流控制器100控制并脉冲过程气体流通过一个或多个气体喷嘴140.使用排气来从腔室25排出处理气体。

22. 发明授权

US06326597B1 Temperature control system for process chamber 有权
标题翻译：处理室温度控制系统
公开(公告)号：US06326597B1
公开(公告)日：2001-12-04
申请号：US09292726
申请日：1999-04-15
申请人： Dmitry Lubomirsky , Allen I. D'ambra , Edward L Floyd , Qiwei Liang , Daniel J Hoffman , Victor H Fuentes , Simon Yavelberg , Jerry C Chen
发明人： Dmitry Lubomirsky , Allen I. D'ambra , Edward L Floyd , Qiwei Liang , Daniel J Hoffman , Victor H Fuentes , Simon Yavelberg , Jerry C Chen
IPC分类号： B23K1000
CPC分类号： H01L21/67248
摘要： Temperature control of a process chamber 25 is achieved by directing a flow of gas at an external surface 100 of the chamber 25. In one aspect, gas directed at the chamber 25 passes through a gas flow amplifier 115 that increases the gas flow. Gas for the temperature control can be drawn in from the ambient air and, after passing over the process chamber 25, the gas can flow out through an outlet 150. Data is presented demonstrating superior temperature control performance over a conventional system.
摘要翻译：通过在室25的外表面100处引导气体流来实现处理室25的温度控制。在一个方面，指向室25的气体通过增加气体流量的气流放大器115。用于温度控制的气体可以从环境空气中吸入，并且在通过处理室25之后，气体可以通过出口150流出。提供数据表明比常规系统具有优异的温度控制性能。

23. 发明授权

US06185839B1 Semiconductor process chamber having improved gas distributor 失效
标题翻译：具有改进的气体分配器的半导体处理室
公开(公告)号：US06185839B1
公开(公告)日：2001-02-13
申请号：US09086704
申请日：1998-05-28
申请人： Arnold Kholodenko , Dmitry Lubomirsky , Guang-Jye Shiau , Peter K. Loewenhardt , Shamouil Shamouilian
发明人： Arnold Kholodenko , Dmitry Lubomirsky , Guang-Jye Shiau , Peter K. Loewenhardt , Shamouil Shamouilian
IPC分类号： F26B334
CPC分类号： H01J37/32449 , H01J37/3244
摘要： A process chamber 25 for processing a semiconductor substrate, comprises a support for supporting a substrate 50. A gas distributor 90 provided for introducing process gas into the chamber 25, comprises a gas nozzle for injecting process gas at an inclined angle relative to a plane of the substrate 50, into the chamber 25. Optionally, a gas flow controller 100 controls and pulses the flow of process gas through one or more gas nozzles 140. An exhaust is used to exhaust the process gas from the chamber 25.
摘要翻译：用于处理半导体衬底的处理室25包括用于支撑衬底50的支撑件。用于将工艺气体引入腔室25中的气体分配器90包括用于将处理气体以相对于衬底50进入腔25.可选地，气流控制器100控制并脉冲过程气体流通过一个或多个气体喷嘴140.使用排气来从腔室25排出处理气体。

24. 发明授权

US09222172B2 Surface treated aluminum nitride baffle 有权
标题翻译：表面处理的氮化铝挡板
公开(公告)号：US09222172B2
公开(公告)日：2015-12-29
申请号：US12195127
申请日：2008-08-20
申请人： Muhammad M. Rasheed , Dmitry Lubomirsky
发明人： Muhammad M. Rasheed , Dmitry Lubomirsky
IPC分类号： C23C16/455 , C23C16/44
CPC分类号： C23C16/45591 , C04B35/581 , C04B40/0092 , C23C16/4404 , C23C16/45563 , C23C16/45565 , H01J37/32449 , H01L21/02271 , H01L21/0262 , H01L21/28556
摘要： Methods and apparatus relating to aluminum nitride baffles are provided herein. In some embodiments, a baffle for use in semiconductor process chambers may include a body comprising aluminum nitride and a metal oxide binding agent, wherein a ratio of aluminum nitride to metal oxide on a surface of the body is greater than or equal to the ratio within the body. In some embodiments, the body may have a center stem and an outer annulus coupled to and extending radially outwards from a lower portion of the center stem. In some embodiments, a method of fabricating a baffle may include sintering aluminum, nitrogen, and a metal oxide binding agent to form a body of the baffle, the body having excess metal oxide binding agent disposed on a surface thereof; and removing a bulk of the excess metal oxide binding agent from a surface of the body.
摘要翻译：本文提供了与氮化铝挡板相关的方法和装置。在一些实施例中，用于半导体处理腔室的挡板可以包括包括氮化铝和金属氧化物结合剂的主体，其中，主体表面上的氮化铝与金属氧化物的比例大于或等于身体。在一些实施例中，主体可以具有中心杆和外环，其与中心杆的下部连接并径向向外延伸。在一些实施方案中，制造挡板的方法可以包括烧结铝，氮和金属氧化物结合剂以形成挡板的主体，所述主体具有设置在其表面上的过量的金属氧化物结合剂; 以及从身体的表面去除大量的多余的金属氧化物粘合剂。

25. 发明申请

US20140017898A1 METHOD OF PATTERNING A LOW-K DIELECTRIC FILM 有权
标题翻译：绘制低K电介质膜的方法
公开(公告)号：US20140017898A1
公开(公告)日：2014-01-16
申请号：US13922543
申请日：2013-06-20
申请人： Srinivas D. Nemani , Jeremiah T. Pender , Qingjun Zhou , Dmitry Lubomirsky , Sergey G. Belostotskiy
发明人： Srinivas D. Nemani , Jeremiah T. Pender , Qingjun Zhou , Dmitry Lubomirsky , Sergey G. Belostotskiy
IPC分类号： H01L21/308
CPC分类号： H01L21/308 , H01J37/32357 , H01L21/31116 , H01L21/31138 , H01L21/31144
摘要： Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer. The low-k dielectric layer is disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a plasma process. The method also involves, in the same operation, removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.
摘要翻译：描述了低k介电膜图案的方法。在一个实例中，图案化低k电介质膜的方法包括在低k电介质层之上形成和图案化掩模层。低k电介质层设置在衬底之上。该方法还涉及用等离子体处理来修饰低k电介质层的暴露部分。该方法在相同的操作中还涉及用远程等离子体处理去除低k电介质层的修改部分对掩模层和低k电介质层的未修改部分选择。

26. 发明授权

US08524004B2 Loadlock batch ozone cure 有权
标题翻译：负压批次臭氧固化
公开(公告)号：US08524004B2
公开(公告)日：2013-09-03
申请号：US13161371
申请日：2011-06-15
申请人： Dmitry Lubomirsky , Jay D. Pinson, II , Kirby H. Floyd , Adib Khan , Shankar Venkataraman
发明人： Dmitry Lubomirsky , Jay D. Pinson, II , Kirby H. Floyd , Adib Khan , Shankar Venkataraman
IPC分类号： C23C16/455
CPC分类号： H01L21/67178 , H01L21/67109 , H01L21/6719 , H01L21/67757
摘要： A substrate processing chamber for processing a plurality of wafers in batch mode. In one embodiment the chamber includes a vertically aligned housing having first and second processing areas separated by an internal divider, the first processing area positioned directly over the second processing area; a multi-zone heater operatively coupled to the housing to heat the first and second processing areas independent of each other; a wafer transport adapted to hold a plurality of wafers within the processing chamber and move vertically between the first and second processing areas; a gas distribution system adapted to introduce ozone into the second area and steam into the first processing area; and a gas exhaust system configured to exhaust gases introduced into the first and second processing areas.
摘要翻译：一种用于以批处理模式处理多个晶片的衬底处理室。在一个实施例中，所述腔室包括具有由内部分隔器隔开的第一和第二处理区域的垂直排列的壳体，所述第一处理区域直接位于所述第二处理区域上方; 多区加热器，其可操作地耦合到所述壳体以彼此独立地加热所述第一处理区域和所述第二处理区域; 晶片传送器，其适于将多个晶片保持在处理室内并在第一和第二处理区域之间垂直移动; 气体分配系统，其适于将臭氧引入所述第二区域并将蒸汽引入到所述第一处理区域中; 以及排气系统，其被配置为排出引入到第一和第二处理区域中的气体。

27. 发明申请

US20130023124A1 METHOD OF PATTERNING A LOW-K DIELECTRIC FILM 有权
标题翻译：绘制低K电介质膜的方法
公开(公告)号：US20130023124A1
公开(公告)日：2013-01-24
申请号：US13187224
申请日：2011-07-20
申请人： Srinivas D. Nemani , Yifeng Zhou , Dmitry Lubomirsky , Ellie Yieh
发明人： Srinivas D. Nemani , Yifeng Zhou , Dmitry Lubomirsky , Ellie Yieh
IPC分类号： H01L21/316 , H01L21/3105
CPC分类号： H01L21/3105 , H01L21/02126 , H01L21/02203 , H01L21/31116 , H01L21/31138 , H01L21/31144
摘要： Methods of patterning low-k dielectric films are described. For example, a method includes forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. Exposed portions of the low-k dielectric layer are modified with a plasma process. The modified portions of the low-k dielectric layer are removed selective to the mask layer and unmodified portions of the low-k dielectric layer.
摘要翻译：描述了低k介电膜图案的方法。例如，一种方法包括在低k电介质层之上形成和图案化掩模层，低k电介质层设置在衬底之上。低等离子体介质层的露出部分用等离子体工艺进行改性。低k电介质层的修改部分被选择性地去除低k电介质层的掩模层和未修饰部分。

28. 发明申请

US20110136347A1 POINT-OF-USE SILYLAMINE GENERATION 审中-公开
标题翻译：使用要点使用硅烷生成
公开(公告)号：US20110136347A1
公开(公告)日：2011-06-09
申请号：US12901979
申请日：2010-10-11
申请人： Nicolay Y. Kovarsky , Dmitry Lubomirsky
发明人： Nicolay Y. Kovarsky , Dmitry Lubomirsky
IPC分类号： H01L21/30 , C23C16/30 , C23C16/40 , C23C16/44
CPC分类号： H01L21/02274 , C01B21/087 , C23C16/4488 , H01L21/0217 , H01L21/02222
摘要： The production and delivery of a reaction precursor containing one or more silylamines near a point of use is described. Silylamines may include trisilylamine (TSA) but also disilylamine (DSA) and monosilylamine (MSA). Mixtures involving two or more silylamines can change composition (e.g. proportion of DSA to TSA) over time. Producing silylamines near a point-of-use limits changing composition, reduces handling of unstable gases and reduces cost of silylamine-consuming processes.
摘要翻译：描述了在使用点附近含有一种或多种甲硅烷基胺的反应前体的生产和递送。甲硅烷基胺可以包括三甲硅烷胺（TSA），也可以包括二甲苯胺（DSA）和单甲胺（MSA）。涉及两种或多种甲硅烷基胺的混合物可随时间改变组成（例如DSA与TSA的比例）。在使用点附近生产甲硅烷基胺限制了组合变化，减少了不稳定气体的处理，并降低了甲胺胺消耗过程的成本。

29. 发明授权

US07848076B2 Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing 有权
标题翻译：用于提供具有降低的等离子体穿透和电弧放电的静电卡盘的方法和装置
公开(公告)号：US07848076B2
公开(公告)日：2010-12-07
申请号：US11888311
申请日：2007-07-31
申请人： Kadthala Ramaya Narendranath , Dmitry Lubomirsky , Xinglong Chen , Sudhir Goodhalekar , Muhammad Rasheed , Tony Kaushal
发明人： Kadthala Ramaya Narendranath , Dmitry Lubomirsky , Xinglong Chen , Sudhir Goodhalekar , Muhammad Rasheed , Tony Kaushal
IPC分类号： H01L21/683
CPC分类号： H01L21/6831 , H01L21/6833 , Y10T279/23
摘要： A method and apparatus for providing a fluid distribution element for an electrostatic chuck that reduces plasma formation and arcing within heat transfer fluid passages. One embodiment comprises a plate and a dielectric component, where the dielectric component is inserted into the plate. The plate is adapted to be positioned within a channel to define a plenum, wherein the dielectric component provides at least a portion of a fluid passage coupled to the plenum. A porous dielectric layer, formed upon the dielectric component, provides at least another portion of a fluid passage coupled to the plenum. In other embodiments, the fluid distribution element comprises various arrangements of components to define a fluid passage that does not provide a line-of-sight path from the support surface for a substrate to a plenum.
摘要翻译：一种用于提供用于静电卡盘的流体分配元件的方法和装置，其减少了传热流体通道内的等离子体形成和电弧。一个实施例包括板和电介质部件，其中介电部件插入板中。板适于被定位在通道内以限定通风室，其中介电部件提供耦合到集气室的流体通道的至少一部分。形成在电介质部件上的多孔介电层提供至少另一部分与气室相连的流体通道。在其他实施例中，流体分配元件包括各种组件的布置，以限定流体通道，该流体通道不提供从用于基底的支撑表面到气室的视线路径。

30. 发明授权

US07827930B2 Apparatus for electroless deposition of metals onto semiconductor substrates 有权
标题翻译：用于将金属无电沉积到半导体衬底上的装置
公开(公告)号：US07827930B2
公开(公告)日：2010-11-09
申请号：US11043442
申请日：2005-01-26
申请人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Russell Ellwanger , Ian A. Pancham , Ramakrishna Cheboli , Timothy W. Weidman
发明人： Dmitry Lubomirsky , Arulkumar Shanmugasundram , Russell Ellwanger , Ian A. Pancham , Ramakrishna Cheboli , Timothy W. Weidman
IPC分类号： B05C3/02
CPC分类号： H01L21/67155 , C23C18/1628 , H01L21/67167 , H01L21/6719 , H01L21/6723
摘要： An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure. The system also includes a substrate a fluid delivery system that is configured to deliver a processing fluid by use of a spraying process to a substrate mounted in the processing enclosure.
摘要翻译：提供无电沉积系统。该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。无电沉积站包括环境受控的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站，以及位于在第一和第二处理站之间传送衬底。该系统还包括位于主机上并被配置为访问处理外壳内部的基板传送机器人。该系统还包括一个流体输送系统，该流体输送系统被配置成通过使用喷射过程将处理流体输送到安装在处理外壳中的基板。

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