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1. 发明授权

US06449871B1 Semiconductor process chamber having improved gas distributor 有权
标题翻译：具有改进的气体分配器的半导体处理室
公开(公告)号：US06449871B1
公开(公告)日：2002-09-17
申请号：US09657997
申请日：2000-09-08
申请人： Arnold Kholodenko , Dmitry Lubomirsky , Guang-Jye Shiau , Peter K. Loewenhardt , Shamouil Shamouilian
发明人： Arnold Kholodenko , Dmitry Lubomirsky , Guang-Jye Shiau , Peter K. Loewenhardt , Shamouil Shamouilian
IPC分类号： F26B334
CPC分类号： H01J37/32449 , H01J37/3244
摘要： A process chamber 25 for processing a semiconductor substrate, comprises a support for supporting a substrate 50. A gas distributor 90 provided for introducing process gas into the chamber 25, comprises a gas nozzle for injecting process gas at an inclined angle relative to a plane of the substrate 50, into the chamber 25. Optionally, a gas flow controller 100 controls and pulses the flow of process gas through one or more gas nozzles 140. An exhaust is used to exhaust the process gas from the chamber 25.
摘要翻译：用于处理半导体衬底的处理室25包括用于支撑衬底50的支撑件。用于将工艺气体引入腔室25中的气体分配器90包括用于将处理气体以相对于衬底50进入腔25.可选地，气流控制器100控制并脉冲过程气体流通过一个或多个气体喷嘴140.使用排气来从腔室25排出处理气体。

2. 发明授权

US06185839B1 Semiconductor process chamber having improved gas distributor 失效
标题翻译：具有改进的气体分配器的半导体处理室
公开(公告)号：US06185839B1
公开(公告)日：2001-02-13
申请号：US09086704
申请日：1998-05-28
申请人： Arnold Kholodenko , Dmitry Lubomirsky , Guang-Jye Shiau , Peter K. Loewenhardt , Shamouil Shamouilian
发明人： Arnold Kholodenko , Dmitry Lubomirsky , Guang-Jye Shiau , Peter K. Loewenhardt , Shamouil Shamouilian
IPC分类号： F26B334
CPC分类号： H01J37/32449 , H01J37/3244
摘要： A process chamber 25 for processing a semiconductor substrate, comprises a support for supporting a substrate 50. A gas distributor 90 provided for introducing process gas into the chamber 25, comprises a gas nozzle for injecting process gas at an inclined angle relative to a plane of the substrate 50, into the chamber 25. Optionally, a gas flow controller 100 controls and pulses the flow of process gas through one or more gas nozzles 140. An exhaust is used to exhaust the process gas from the chamber 25.
摘要翻译：用于处理半导体衬底的处理室25包括用于支撑衬底50的支撑件。用于将工艺气体引入腔室25中的气体分配器90包括用于将处理气体以相对于衬底50进入腔25.可选地，气流控制器100控制并脉冲过程气体流通过一个或多个气体喷嘴140.使用排气来从腔室25排出处理气体。

3. 发明授权

US07363876B2 Multi-core transformer plasma source 失效
标题翻译：多核变压器等离子体源
公开(公告)号：US07363876B2
公开(公告)日：2008-04-29
申请号：US10768607
申请日：2004-01-30
申请人： Canfeng Lai , Michael S. Cox , Peter K. Loewenhardt , Tsutomu Tanaka , Shamouil Shamouilian
发明人： Canfeng Lai , Michael S. Cox , Peter K. Loewenhardt , Tsutomu Tanaka , Shamouil Shamouilian
IPC分类号： C23C16/00 , C23F1/00 , H01L21/3065
CPC分类号： H01J37/32431
摘要： A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.
摘要翻译：使用环形铁芯的变压器耦合等离子体源沿着环面的中心轴形成具有高密度离子的等离子体。在一个实施例中，等离子体发生器的芯以垂直对准堆叠以增强等离子体的方向性和发电效率。在另一个实施例中，芯以横向阵列布置成等离子体发生板，其可被缩放以适应各种尺寸的衬底，包括非常大的衬底。所获得的等离子体的对称性允许同时处理两个基板，一个在等离子体发生器的两侧。

4. 发明授权

US06755150B2 Multi-core transformer plasma source 失效
标题翻译：多核变压器等离子体源
公开(公告)号：US06755150B2
公开(公告)日：2004-06-29
申请号：US09839360
申请日：2001-04-20
申请人： Canfeng Lai , Michael S. Cox , Peter K. Loewenhardt , Tsutomu Tanaka , Shamouil Shamouilian
发明人： Canfeng Lai , Michael S. Cox , Peter K. Loewenhardt , Tsutomu Tanaka , Shamouil Shamouilian
IPC分类号： C23C1600
CPC分类号： H01J37/32431
摘要： A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.
摘要翻译：使用环形铁芯的变压器耦合等离子体源沿着环面的中心轴形成具有高密度离子的等离子体。在一个实施例中，等离子体发生器的芯以垂直对准堆叠以增强等离子体的方向性和发电效率。在另一个实施例中，芯以横向阵列布置成等离子体发生板，其可被缩放以适应各种尺寸的衬底，包括非常大的衬底。所获得的等离子体的对称性允许同时处理两个基板，一个在等离子体发生器的两侧。

5. 发明授权

US06673199B1 Shaping a plasma with a magnetic field to control etch rate uniformity 失效
标题翻译：用磁场成形等离子体，以控制蚀刻速率均匀性
公开(公告)号：US06673199B1
公开(公告)日：2004-01-06
申请号：US09800876
申请日：2001-03-07
申请人： John M. Yamartino , Peter K. Loewenhardt , Dmitry Lubomirsky , Saravjeet Singh
发明人： John M. Yamartino , Peter K. Loewenhardt , Dmitry Lubomirsky , Saravjeet Singh
IPC分类号： H05H100
CPC分类号： H01J37/321 , H01J37/32623 , H01J37/3266
摘要： A substrate etching chamber has a substrate support, a gas supply to introduce a process gas into the chamber; an inductor antenna to sustain a plasma of the process gas in a process zone of the chamber, and an exhaust to exhaust the process gas. A magnetic field generator disposed about the chamber has first and second solenoids. A controller is adapted to control a power supply to provide a first current to the first solenoid and a second current to the second solenoid, thereby generating a magnetic field in the process zone of the chamber to controllably shape the plasma in the process zone to reduce etch rate variations across the substrate.
摘要翻译：衬底蚀刻室具有衬底支撑件，用于将工艺气体引入腔室中的气体供应源; 电感天线，用于维持室的处理区中的处理气体的等离子体，以及排气以排出处理气体。设置在室周围的磁场发生器具有第一和第二螺线管。控制器适于控制电源以向第一螺线管提供第一电流，并将第二电流提供给第二螺线管，从而在腔室的过程区域中产生磁场，以可控地成形处理区域中的等离子体，以减少衬底上的蚀刻速率变化。

6. 发明授权

US06189484B1 Plasma reactor having a helicon wave high density plasma source 失效
标题翻译：具有螺旋波高密度等离子体源的等离子体反应器
公开(公告)号：US06189484B1
公开(公告)日：2001-02-20
申请号：US09263642
申请日：1999-03-05
申请人： Gerald Zheyao Yin , Chii Guang Lee , Arnold Kholodenko , Peter K. Loewenhardt , Hongching Shan , Diana Xiaobing Ma , Dan Katz
发明人： Gerald Zheyao Yin , Chii Guang Lee , Arnold Kholodenko , Peter K. Loewenhardt , Hongching Shan , Diana Xiaobing Ma , Dan Katz
IPC分类号： C23C1600
CPC分类号： H01J37/321 , H01J37/32678
摘要： A helicon wave, high density RF plasma reactor having improved plasma and contaminant control. The reactor contains a well defined anode electrode that is heated above a polymer condensation temperature to ensure that deposits of material that would otherwise alter the ground plane characteristics do not form on the anode. The reactor also contains a magnetic bucket for axially confining the plasma in the chamber using a plurality of vertically oriented magnetic strips or horizontally oriented magnetic toroids that circumscribe the chamber. The reactor may utilize a temperature control system to maintain a constant temperature on the surface of the chamber.
摘要翻译：具有改进的等离子体和污染物控制的螺旋波，高密度RF等离子体反应器。反应器包含明确定义的阳极电极，其被加热到聚合物冷凝温度以上，以确保否则会改变接地平面特性的材料沉积物不会在阳极上形成。反应器还包含磁性桶，用于使用多个垂直取向的磁条或围绕室的水平取向的磁环将轴向限制在室中的等离子体。反应器可以利用温度控制系统来维持室的表面上恒定的温度。

7. 发明授权

US06566272B2 Method for providing pulsed plasma during a portion of a semiconductor wafer process 有权
标题翻译：在半导体晶片工艺的一部分期间提供脉冲等离子体的方法
公开(公告)号：US06566272B2
公开(公告)日：2003-05-20
申请号：US09360883
申请日：1999-07-23
申请人： Alex Paterson , John M. Yamartino , Peter K. Loewenhardt , Wade Zawalski
发明人： Alex Paterson , John M. Yamartino , Peter K. Loewenhardt , Wade Zawalski
IPC分类号： H01L21302
CPC分类号： H01J37/321 , H01J2237/0206 , H01L21/3065 , H01L21/32136 , H01L21/32137
摘要： A method for processing a semiconductor wafer with a plasma using continuous RF power for a first phase of wafer processing and with pulsed RF power for a second phase of wafer processing.
摘要翻译：一种使用等离子体处理半导体晶片的方法，该等离子体使用用于晶片处理的第一阶段的连续RF功率和用于晶片处理的第二阶段的脉冲RF功率。

8. 发明授权

US06508198B1 Automatic tuning in a tapped RF transformer inductive source of a plasma reactor for processing a semiconductor wafer 失效
标题翻译：在用于处理半导体晶片的等离子体反应器的抽头RF变压器感应源中自动调谐
公开(公告)号：US06508198B1
公开(公告)日：2003-01-21
申请号：US09569834
申请日：2000-05-11
申请人： Daniel J. Hoffman , Peter K. Loewenhardt , Victor H. Fuentes , Qiwei Liang
发明人： Daniel J. Hoffman , Peter K. Loewenhardt , Victor H. Fuentes , Qiwei Liang
IPC分类号： C23C16507
CPC分类号： H01J37/321 , H01J37/32183
摘要： In a plasma reactor for processing a semiconductor wafer having an overhead inductive coil antenna, automatic compensation for the load impedance shift that accompanies plasma ignition is achieved using fixed elements. This is accomplished by applying RF power to an intermediate tap of the coil antenna that divides the antenna into two portions, while permanently suppressing the inductance of one of the two portions to an at least nearly fixed level.
摘要翻译：在用于处理具有顶置感应线圈天线的半导体晶片的等离子体反应器中，使用固定元件实现了伴随等离子体点火的负载阻抗偏移的自动补偿。这通过将RF功率施加到将天线分成两部分的线圈天线的中间抽头，同时将两部分中的一个的电感永久地抑制到至少接近固定的电平来实现。

9. 发明授权

US5779926A Plasma process for etching multicomponent alloys 失效
标题翻译：用于蚀刻多组分合金的等离子体工艺
公开(公告)号：US5779926A
公开(公告)日：1998-07-14
申请号：US596960
申请日：1996-02-05
申请人： Diana Xiaobing Ma , Daisuke Tajima , Allen Zhao , Peter K. Loewenhardt , Timothy R. Webb
发明人： Diana Xiaobing Ma , Daisuke Tajima , Allen Zhao , Peter K. Loewenhardt , Timothy R. Webb
IPC分类号： C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/3213 , B44C1/22 , C23F1/00 , H01L21/00
CPC分类号： H01J37/321 , C23F4/00 , H01L21/32136
摘要： A method of etching a multicomponent alloy on a substrate, without forming etchant residue on the substrate, is described. In the method, the substrate is placed in a process chamber comprising a plasma generator and plasma electrodes. A process gas comprising a volumetric flow ratio V.sub.r of (i) a chlorine-containing gas capable of ionizing to form dissociated Cl.sup.+ plasma ions and non-dissociated Cl.sub.2.sup.+ plasma ions, and (ii) an inert gas capable of enhancing dissociation of the chlorine-containing gas, in introduced into the process chamber. The process gas is ionized to form plasma ions that energetically impinge on the substrate by (i) applying RF current at a first power level to the plasma generator, and (ii) applying RF current at a second power level to the plasma electrodes. The combination of (i) the volumetric flow ratio V.sub.r of the process gas and (ii) the power ratio P.sub.r of the first power level to the second power level, is selected so that the chlorine-containing etchant gas ionizes to form dissociated Cl.sup.+ plasma ions and non-dissociated Cl.sub.2.sup.+ plasma ions in a number ratio of at least about 0.6:1. The increased amount of dissociated Cl.sup.+ ions relative to non-dissociated Cl.sub.2.sup.+ ions etches the multicomponent alloy on the substrate at an etch rate of at least about 500 nm/min, without forming etchant residue on the substrate.
摘要翻译：描述了在衬底上蚀刻多组分合金而不在衬底上形成蚀刻剂残留物的方法。在该方法中，将基板放置在包括等离子体发生器和等离子体电极的处理室中。一种工艺气体，其包括（i）能够电离以形成离解的Cl +等离子体离子和非离解的Cl 2 +等离子体离子的含氯气体的体积流量比Vr，和（ii）能够增强氯 - 含有气体，被引入处理室。通过（i）以等离子体发生器施加第一功率电平的RF电流，并且（ii）将第二功率电平的RF电流施加到等离子体电极，将工艺气体电离以形成能量地撞击衬底的等离子体离子。选择（i）处理气体的体积流量比Vr和（ii）第一功率水平与第二功率水平的功率比Pr的组合，使得含氯蚀刻剂气体电离以形成离解的Cl +等离子体离子和非离解的Cl2 +等离子体离子的数量比至少为约0.6:1。解离的Cl +离子相对于未离解的Cl 2 +离子的量的增加量以至少约500nm / min的蚀刻速率蚀刻衬底上的多组分合金，而不在衬底上形成蚀刻剂残留物。

10. 发明授权

US06503367B1 Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma 失效
标题翻译：磁阻等离子体磁感应耦合等离子体反应器
公开(公告)号：US06503367B1
公开(公告)日：2003-01-07
申请号：US09521799
申请日：2000-03-09
申请人： Peter K. Loewenhardt , Gerald Z. Yin , Philip M. Salzman
发明人： Peter K. Loewenhardt , Gerald Z. Yin , Philip M. Salzman
IPC分类号： H01L2100
CPC分类号： H01J37/3266 , H01J37/321 , H01J37/32834
摘要： The invention is embodied in an RF plasma reactor for processing a semiconductor wafer, including as reactor chamber bounded by a chamber wall defining an interior region of the chamber, a gas inlet, an RF power source and an RF power applicator proximal the chamber and connected to the RF power source, and an opening in this chamber communicating with the interior region of the chamber. The invention further includes a magnet apparatus disposed adjacent said opening to resist flow of plasma ions through the opening, and the magnet apparatus comprising a first pair of magnetic poles and a second pair of magnetic poles, the first pair of magnetic poles facing the second pair of magnetic poles across the opening.
摘要翻译：本发明体现在用于处理半导体晶片的RF等离子体反应器中，该等离子体反应器包括作为反应室的反应室，该反应室由限定室的内部区域的室壁界定，气体入口，RF电源和RF室，并且连接到RF电源，并且该室中的开口与腔室的内部区域连通。本发明还包括一个与所述开口相邻设置的磁性装置，以阻止等离子体离子通过该开口的流动;磁体装置包括第一对磁极和第二对磁极，第一对磁极面对第二对磁极的磁极穿过开口。

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