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1. 发明申请

US20100043821A1 METHOD OF PHOTORESIST REMOVAL IN THE PRESENCE OF A LOW-K DIELECTRIC LAYER 审中-公开
标题翻译：在低K介质层存在下除去光电离元件的方法
公开(公告)号：US20100043821A1
公开(公告)日：2010-02-25
申请号：US12193964
申请日：2008-08-19
申请人： Siyi Li , Ryan Patz , Qingjun Zhou , Jeremiah Pender , Michael D. Armacost
发明人： Siyi Li , Ryan Patz , Qingjun Zhou , Jeremiah Pender , Michael D. Armacost
IPC分类号： B08B6/00
CPC分类号： H01L21/31138 , G03F7/427 , H01L21/76808
摘要： Described herein are methods and apparatus for removing photoresist in the presence of low-k dielectric layers. In one embodiment, the method includes exciting a first mixture of gases having a ratio of a flow rate of reducing process gas to a flow rate of an oxygen-containing process gas that is between 1:1 and 100:1 to generate a first reactive gas mixture. Next, the method includes exposing the photoresist layer that overlays the low-k dielectric layer on a substrate to the first reactive gas mixture to selectively remove the photoresist layer from the dielectric layer. Next, the method includes exposing the photoresist layer to a second reactive gas mixture to selectively remove the photoresist layer from the dielectric layer. The first and second reactive gas mixtures contain substantially no ions when the substrate is exposed to these mixtures in order to minimize damage to the low-k dielectric layer.
摘要翻译：这里描述了在低k电介质层的存在下去除光致抗蚀剂的方法和装置。在一个实施方案中，该方法包括激发第一混合气体，其中还原过程气体的流量与含氧处理气体的流量之比在1:1至100:1之间以产生第一反应性气体混合物接下来，该方法包括将衬底上的低k电介质层覆盖的光致抗蚀剂层暴露于第一反应气体混合物，以从电介质层选择性地除去光致抗蚀剂层。接下来，该方法包括将光致抗蚀剂层暴露于第二反应气体混合物以从介质层选择性地除去光致抗蚀剂层。当基板暴露于这些混合物时，第一和第二反应气体混合物基本上不含离子，以便最小化对低k电介质层的损伤。

2. 发明申请

US20070249172A1 Method for removing masking materials with reduced low-k dielectric material damage 失效
标题翻译：减少低k介电材料损坏的去除掩蔽材料的方法
公开(公告)号：US20070249172A1
公开(公告)日：2007-10-25
申请号：US11410786
申请日：2006-04-25
申请人： Zhilin Huang , Siyi Li , Qingjun Zhou
发明人： Zhilin Huang , Siyi Li , Qingjun Zhou
IPC分类号： H01L21/465 , G06F19/00
CPC分类号： H01L21/76808 , H01L21/31138
摘要： Methods for removing masking materials from a substrate having exposed low-k materials while minimizing damage to exposed surfaces of the low-k material are provided herein. In one embodiment a method for removing masking materials from a substrate includes providing a substrate having exposed low-k materials and a masking material to be removed; exposing the masking material to a first plasma formed from a reducing chemistry for a first period of time; and exposing the masking material to a second plasma formed from an oxidizing chemistry for a second period of time. The steps may be repeated as desired and may be performed in reverse order. Optionally, at least one diluent gas may be added to the oxidizing chemistry.
摘要翻译：本文提供了从具有暴露的低k材料的基材中除去掩蔽材料同时最小化对低k材料的暴露表面的损害的方法。在一个实施例中，用于从衬底去除掩模材料的方法包括提供具有暴露的低k材料和待除去的掩模材料的衬底; 将掩模材料暴露于由还原化学物质形成的第一等离子体第一时间段; 以及将所述掩蔽材料暴露于由氧化化学物质形成的第二等离子体第二时间段内。这些步骤可以根据需要重复，并且可以以相反的顺序进行。任选地，可以向氧化化学品中加入至少一种稀释气体。

3. 发明申请

US20140017898A1 METHOD OF PATTERNING A LOW-K DIELECTRIC FILM 有权
标题翻译：绘制低K电介质膜的方法
公开(公告)号：US20140017898A1
公开(公告)日：2014-01-16
申请号：US13922543
申请日：2013-06-20
申请人： Srinivas D. Nemani , Jeremiah T. Pender , Qingjun Zhou , Dmitry Lubomirsky , Sergey G. Belostotskiy
发明人： Srinivas D. Nemani , Jeremiah T. Pender , Qingjun Zhou , Dmitry Lubomirsky , Sergey G. Belostotskiy
IPC分类号： H01L21/308
CPC分类号： H01L21/308 , H01J37/32357 , H01L21/31116 , H01L21/31138 , H01L21/31144
摘要： Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer. The low-k dielectric layer is disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a plasma process. The method also involves, in the same operation, removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.
摘要翻译：描述了低k介电膜图案的方法。在一个实例中，图案化低k电介质膜的方法包括在低k电介质层之上形成和图案化掩模层。低k电介质层设置在衬底之上。该方法还涉及用等离子体处理来修饰低k电介质层的暴露部分。该方法在相同的操作中还涉及用远程等离子体处理去除低k电介质层的修改部分对掩模层和低k电介质层的未修改部分选择。

4. 发明申请

US20110253670A1 METHODS FOR ETCHING SILICON-BASED ANTIREFLECTIVE LAYERS 审中-公开
标题翻译：用于蚀刻硅基抗反射层的方法
公开(公告)号：US20110253670A1
公开(公告)日：2011-10-20
申请号：US12896389
申请日：2010-10-01
申请人： YIFENG ZHOU , QINGJUN ZHOU , RYAN PATZ , JEREMIAH T. PENDER , MICHAEL D. ARMACOST
发明人： YIFENG ZHOU , QINGJUN ZHOU , RYAN PATZ , JEREMIAH T. PENDER , MICHAEL D. ARMACOST
IPC分类号： B01J19/00
CPC分类号： H01L21/31116
摘要： Methods for etching silicon-based antireflective layers are provided herein. In some embodiments, a method of etching a silicon-based antireflective layer may include providing to a process chamber a substrate having a multiple-layer resist thereon, the multiple-layer resist comprising a patterned photoresist layer defining features to be etched into the substrate disposed above a silicon-based antireflective coating; and etching the silicon-based antireflective layer through the patterned photoresist layer using a plasma formed from a process gas having a primary reactive agent comprising a chlorine-containing gas. In some embodiments, the chlorine-containing gas is chlorine (Cl2).
摘要翻译：本文提供了蚀刻硅基抗反射层的方法。在一些实施例中，蚀刻硅基抗反射层的方法可以包括向处理室提供其上具有多层抗蚀剂的衬底，所述多层抗蚀剂包括限定要被蚀刻到衬底中的特征的图案化光致抗蚀剂层在硅基抗反射涂层之上; 以及使用由具有包含含氯气体的初级反应剂的工艺气体形成的等离子体，通过图案化的光致抗蚀剂层蚀刻硅基抗反射层。在一些实施方案中，含氯气体是氯（Cl 2）。

5. 发明申请

US20110079918A1 PLASMA-BASED ORGANIC MASK REMOVAL WITH SILICON FLUORIDE 审中-公开
标题翻译：基于等离子体的有机硅除去硅氟化物
公开(公告)号：US20110079918A1
公开(公告)日：2011-04-07
申请号：US12894659
申请日：2010-09-30
申请人： Yifeng ZHOU , Qingjun Zhou , Ling Wang , Nancy Fung , Jeremiah T. Pender
发明人： Yifeng ZHOU , Qingjun Zhou , Ling Wang , Nancy Fung , Jeremiah T. Pender
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L23/5226 , G03F7/427 , H01L21/02063 , H01L21/31138 , H01L21/76808 , H01L21/7681 , H01L2924/0002 , H01L2924/00
摘要： Removal of organic mask material from an etched dielectric film with an etchant gas mixture including silicon fluoride (SiF4). In certain embodiments, SiF4 is combined in an etchant gas mixture of molecular nitrogen (N2), carbon dioxide (CO2) to in-situ strip an organic mask material from a porous low-k dielectric film that has been etched to form a damascene interconnect structure with reduced etch profile bowing and reduced ashing damage to the low-k dielectric film.
摘要翻译：使用包含氟化硅（SiF4）的蚀刻剂气体混合物从蚀刻的电介质膜去除有机掩模材料。在某些实施方案中，SiF 4在分子氮（N 2），二氧化碳（CO 2）的蚀刻剂气体混合物中组合，从原位剥离已经被蚀刻以形成镶嵌互连的多孔低k电介质膜的有机掩模材料结构具有减小的蚀刻轮廓弯曲并减少对低k电介质膜的灰化损伤。

6. 发明申请

US20100022091A1 METHOD FOR PLASMA ETCHING POROUS LOW-K DIELECTRIC LAYERS 审中-公开
标题翻译：等离子体蚀刻多孔低K介质层的方法
公开(公告)号：US20100022091A1
公开(公告)日：2010-01-28
申请号：US12180367
申请日：2008-07-25
申请人： SIYI LI , Qingjun Zhou , Ryan Patz , Yifeng Zhou , Jeremiah Pender , Michael D. Armacost
发明人： SIYI LI , Qingjun Zhou , Ryan Patz , Yifeng Zhou , Jeremiah Pender , Michael D. Armacost
IPC分类号： H01L21/306
CPC分类号： H01L21/31116 , H01J37/3244 , H01J37/32449 , H01J2237/334 , H01L21/31138 , H01L21/76808 , H01L21/76813
摘要： Described herein are methods and apparatuses for etching low-k dielectric layers to form various interconnect structures. In one embodiment, the method includes forming an opening in a resist layer. The method further includes etching a porous low-k dielectric layer with a process gas mixture that includes a fluorocarbon gas and a carbon dioxide (CO2) gas to form vias. The fluorocarbon gas may be C4F6 gas. A ratio of a flow rate of the C4F6 gas to a flow rate of the CO2 gas can vary from approximately 1:2 to 1:10. In another embodiment, the porous low-k dielectric layer is etched with a process gas mixture that includes a fluorocarbon gas and an argon gas with no CHF3 gas to form trenches aligned with the vias in an integrated dual-damascene structure. The fluorocarbon gas may be CF4 gas.
摘要翻译：这里描述了用于蚀刻低k电介质层以形成各种互连结构的方法和装置。在一个实施例中，该方法包括在抗蚀剂层中形成开口。该方法还包括用包括碳氟化合物气体和二氧化碳（CO 2）气体的工艺气体混合物蚀刻多孔低k电介质层以形成通孔。碳氟化合物气体可以是C 4 F 6气体。 C4F6气体的流量与CO 2气体的流量的比率可以在约1:2至1:10之间变化。在另一个实施例中，多孔低k电介质层被包括碳氟化合物气体和没有CHF 3气体的氩气的工艺气体混合物进行蚀刻，以形成与整个双镶嵌结构中的通路对准的沟槽。碳氟化合物气体可以是CF 4气体。

7. 发明申请

US20150380215A1 METHOD OF PATTERNING A LOW-K DIELECTRIC FILM 审中-公开
标题翻译：绘制低K电介质膜的方法
公开(公告)号：US20150380215A1
公开(公告)日：2015-12-31
申请号：US14849296
申请日：2015-09-09
申请人： Srinivas D. Nemani , Jeremiah T. Pender , Qingjun Zhou , Dmitry Lubomirsky , Sergey G. Belostotskiy
发明人： Srinivas D. Nemani , Jeremiah T. Pender , Qingjun Zhou , Dmitry Lubomirsky , Sergey G. Belostotskiy
IPC分类号： H01J37/32
摘要： Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.
摘要翻译：描述了低k介电膜图案的方法。在一个实例中，图案化低k电介质膜的方法包括在低k电介质层之上形成和图案化掩模层，低k电介质层设置在衬底之上。该方法还涉及用无氮等离子体工艺来修饰低k电介质层的暴露部分。该方法还涉及通过远程等离子体处理去除低k电介质层的修改部分对掩模层和低k电介质层的未修改部分有选择性。

8. 发明授权

US09165783B2 Method of patterning a low-k dielectric film 有权
标题翻译：图案化低k电介质膜的方法
公开(公告)号：US09165783B2
公开(公告)日：2015-10-20
申请号：US14059996
申请日：2013-10-22
申请人： Srinivas D. Nemani , Jeremiah T. Pender , Qingjun Zhou , Dmitry Lubomirsky , Sergey G. Belostotskiy
发明人： Srinivas D. Nemani , Jeremiah T. Pender , Qingjun Zhou , Dmitry Lubomirsky , Sergey G. Belostotskiy
IPC分类号： H01L21/302 , H01L21/3105 , H01L21/311 , H01L21/02
CPC分类号： H01J37/3244 , H01J37/32009 , H01L21/02126 , H01L21/3105 , H01L21/31116 , H01L21/31138
摘要： Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.
摘要翻译：描述了低k介电膜图案的方法。在一个实例中，图案化低k电介质膜的方法包括在低k电介质层之上形成和图案化掩模层，低k电介质层设置在衬底之上。该方法还涉及用无氮等离子体工艺来修饰低k电介质层的暴露部分。该方法还涉及通过远程等离子体处理去除低k电介质层的修改部分对掩模层和低k电介质层的未修改部分有选择性。

9. 发明申请

US20140120726A1 METHOD OF PATTERNING A LOW-K DIELECTRIC FILM 有权
标题翻译：绘制低K电介质膜的方法
公开(公告)号：US20140120726A1
公开(公告)日：2014-05-01
申请号：US14059996
申请日：2013-10-22
申请人： Srinivas D. Nemani , Jeremiah T. Pender , Qingjun Zhou , Dmitry Lubomirsky , Sergey G. Belostotskiy
发明人： Srinivas D. Nemani , Jeremiah T. Pender , Qingjun Zhou , Dmitry Lubomirsky , Sergey G. Belostotskiy
IPC分类号： H01L21/308 , H01L21/02 , H01L21/3065
CPC分类号： H01J37/3244 , H01J37/32009 , H01L21/02126 , H01L21/3105 , H01L21/31116 , H01L21/31138
摘要： Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.
摘要翻译：描述了低k介电膜图案的方法。在一个实例中，图案化低k电介质膜的方法包括在低k电介质层之上形成和图案化掩模层，低k电介质层设置在衬底之上。该方法还涉及用无氮等离子体工艺来修饰低k电介质层的暴露部分。该方法还涉及通过远程等离子体处理去除低k电介质层的修改部分对掩模层和低k电介质层的未修改部分有选择性。

10. 发明授权

US07790047B2 Method for removing masking materials with reduced low-k dielectric material damage 失效
标题翻译：减少低k介电材料损坏的去除掩蔽材料的方法
公开(公告)号：US07790047B2
公开(公告)日：2010-09-07
申请号：US11410786
申请日：2006-04-25
申请人： Zhilin Huang , Siyi Li , Qingjun Zhou
发明人： Zhilin Huang , Siyi Li , Qingjun Zhou
IPC分类号： H01L21/302
CPC分类号： H01L21/76808 , H01L21/31138
摘要： Methods for removing masking materials from a substrate having exposed low-k materials while minimizing damage to exposed surfaces of the low-k material are provided herein. In one embodiment a method for removing masking materials from a substrate includes providing a substrate having exposed low-k materials and a masking material to be removed; exposing the masking material to a first plasma formed from a reducing chemistry for a first period of time; and exposing the masking material to a second plasma formed from an oxidizing chemistry for a second period of time. The steps may be repeated as desired and may be performed in reverse order. Optionally, at least one diluent gas may be added to the oxidizing chemistry.
摘要翻译：本文提供了从具有暴露的低k材料的基材中除去掩蔽材料同时最小化对低k材料的暴露表面的损害的方法。在一个实施例中，用于从衬底去除掩模材料的方法包括提供具有暴露的低k材料和待除去的掩模材料的衬底; 将掩模材料暴露于由还原化学物质形成的第一等离子体第一时间段; 以及将所述掩蔽材料暴露于由氧化化学物质形成的第二等离子体第二时间段内。这些步骤可以根据需要重复，并且可以以相反的顺序进行。任选地，可以向氧化化学品中加入至少一种稀释气体。

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