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21. 发明授权

US08161422B2 Fast and accurate method to simulate intermediate range flare effects 有权
标题翻译：快速准确的模拟中程火炬效果的方法
公开(公告)号：US08161422B2
公开(公告)日：2012-04-17
申请号：US12349108
申请日：2009-01-06
申请人： Maharaj Mukherjee , James A. Culp , Scott M. Mansfield , Kafai Lai , Alan E. Rosenbluth
发明人： Maharaj Mukherjee , James A. Culp , Scott M. Mansfield , Kafai Lai , Alan E. Rosenbluth
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F1/70
摘要： A method is provided for modeling lithographic processes in the design of photomasks for the manufacture of semiconductor integrated circuits, and more particularly for simulating intermediate range flare effects. For a region of influence (ROI) from first ROI1 of about 5λ/NA to distance ROI2 when the point spread function has a slope that is slowly varying according to a predetermined criterion, then mask shapes at least within the distance range from ROI1 to ROI2 are smoothed prior to computing the SOCS convolutions. The method provides a fast method for simulating intermediate range flare effects with sufficient accuracy.
摘要翻译：提供了一种用于在用于制造半导体集成电路的光掩模的设计中对光刻工艺进行建模的方法，更具体地说，用于模拟中间范围闪光效应。对于当点扩散函数具有根据预定标准缓慢变化的斜率时，从约5λ/ NA的第一ROI1到距离ROI2的影响区域（ROI），则至少在从ROI1到ROI2的距离范围内的掩模形状在计算SOCS卷积之前进行平滑处理。该方法提供了一种用于以足够的精度模拟中等范围闪光效果的快速方法。

22. 发明申请

US20120077130A1 METHOD FOR GENERATING A PLURALITY OF OPTIMIZED WAVEFRONTS FOR A MULTIPLE EXPOSURE LITHOGRAPHIC PROCESS 失效
标题翻译：一种用于多次曝光的光刻过程产生多重优化波形的方法
公开(公告)号：US20120077130A1
公开(公告)日：2012-03-29
申请号：US12890854
申请日：2010-09-27
申请人： Saeed Bagheri , Kafai Lai , David O. Melville , Alan E. Rosenbluth , Kehan Tian , Jaione Tirapu Azpiroz
发明人： Saeed Bagheri , Kafai Lai , David O. Melville , Alan E. Rosenbluth , Kehan Tian , Jaione Tirapu Azpiroz
IPC分类号： G03F7/20 , G06F17/50
CPC分类号： G03F7/70466 , G03F1/70
摘要： A simplified version of a multiexpose mask optimization problem is solved in order to find a compressed space in which to search for the solution to the full problem formulation. The simplification is to reduce the full problem to an unconstrained formulation. The full problem of minimizing dark region intensity while maintaining intensity above threshold at each bright point can be converted to the unconstrained problem of minimizing average dark region intensity per unit of average intensity in the bright regions. The extrema solutions to the simplified problem can be obtained for each source. This set of extrema solutions is then assessed to determine which features are predominantly printed by which source. A minimal set of extrema solutions serves as a space of reduced dimensionality within which to maximize the primary objective under constraints. The space typically has reduced dimensionality through selection of highest quality extrema solutions.
摘要翻译：解决了一个简化版本的多功能面罩优化问题，以便找到一个压缩空间，在该空间中搜索解决问题的全部问题。简化是将完整的问题减少到无约束的公式。将每个亮点处的强度保持在阈值以上的暗区强度最小化的问题可以转化为明亮区域每单位平均强度平均暗区强度最小化的无约束问题。可以为每个源获得简化问题的极值解。然后评估这组极值解决方案，以确定哪些特征主要由哪个来源打印。最小的一组极值解决方案作为减小维数的空间，在这个空间内可以在约束条件下最大化主要目标。该空间通常通过选择最高质量的极值解决方案降低维度。

23. 发明授权

US08073288B2 Rendering a mask using coarse mask representation 有权
标题翻译：使用粗糙掩码表示渲染掩模
公开(公告)号：US08073288B2
公开(公告)日：2011-12-06
申请号：US12015084
申请日：2008-01-16
申请人： Mark A. Lavin , Maharaj Mukherjee , Alan E. Rosenbluth
发明人： Mark A. Lavin , Maharaj Mukherjee , Alan E. Rosenbluth
IPC分类号： G06K9/20
CPC分类号： G03F7/705 , G03F1/36
摘要： A method, system and computer program product for rendering a mask are disclosed. A method of rendering a mask may comprise: providing an initial mask design for a photolithographic process, the initial mask design including polygons; initially rendering the initial mask design as a coarse mask representation in a pixel based image calculation; identifying an overhang portion; and rendering the overhang portion using a set of subpixels whose artifacts from spatial-localization lie outside a practical resolution of a pseudo lens having a numerical aperture larger than that of a projection lens used in the photolithographic process; and updating the initial rendering based on the overhang portion rendering.
摘要翻译：公开了一种用于渲染掩模的方法，系统和计算机程序产品。渲染掩模的方法可以包括：提供用于光刻工艺的初始掩模设计，初始掩模设计包括多边形; 最初在基于像素的图像计算中将初始掩模设计呈现为粗糙掩模表示; 识别突出部分; 并且使用一组子空间渲染悬伸部分，其中来自空间定位的伪像位于具有大于在光刻工艺中使用的投影透镜的数值孔径的假透镜的实际分辨率之外; 并基于突出部分呈现来更新初始呈现。

24. 发明授权

US07969554B2 Method, computer program, apparatus and system providing printing for an illumination mask for three-dimensional images 有权
标题翻译：方法，计算机程序，设备和系统，为三维图像的照明掩模提供打印
公开(公告)号：US07969554B2
公开(公告)日：2011-06-28
申请号：US11778750
申请日：2007-07-17
申请人： David O. S. Melville , Alan E. Rosenbluth , Kehan Tian
发明人： David O. S. Melville , Alan E. Rosenbluth , Kehan Tian
IPC分类号： G03B27/54
CPC分类号： G03B27/54 , G03F7/70125
摘要： A method able to provide illumination source parameters for illumination of a lithographic mask in order to project a three-dimensional image into a resist system. Source intensities of incident beams are determined using a near linear program and responsive to an allowed range of variation. Computer program, apparatus and system are detailed and variations are described.
摘要翻译：一种能够提供用于照射光刻掩模的照明源参数以便将三维图像投影到抗蚀剂系统中的方法。入射光束的光源强度使用近似线性程序确定，并响应允许的变化范围。详细描述了计算机程序，装置和系统，并对其进行了描述。

25. 发明授权

US07944545B2 High contrast lithographic masks 有权
标题翻译：高对比度光刻面具
公开(公告)号：US07944545B2
公开(公告)日：2011-05-17
申请号：US12463742
申请日：2009-05-11
申请人： Saeed Bagheri , David O. S. Melville , Alan E. Rosenbluth , Kehan Tian
发明人： Saeed Bagheri , David O. S. Melville , Alan E. Rosenbluth , Kehan Tian
IPC分类号： G03B27/42 , G03B27/52
CPC分类号： G03B27/54 , G03F1/34
摘要： A structure and a method for an equi-brightness optimization. The method may include projecting a plurality of bright patterns having a plurality of bright points and a plurality of dark patterns having a plurality of dark points on a substrate, generating a plurality of joint eigenvectors of the plurality of bright points and a plurality of dark points, selecting a predetermined number of joint eigenvectors to project the plurality of bright patterns, generating a plurality of natural sampling points from the plurality of bright points, wherein the plurality of natural sampling points has a substantially equal intensity, and obtaining a representation of an aperture from the plurality of natural sampling points, wherein an image of the representation of the aperture has a substantially uniform intensity.
摘要翻译：用于等亮度优化的结构和方法。该方法可以包括在衬底上投影具有多个亮点的多个亮图案和具有多个暗点的多个暗图案，产生多个亮点的多个联合特征向量和多个暗点选择预定数量的联合特征向量以投影所述多个亮图案，从所述多个亮点生成多个自然采样点，其中所述多个自然采样点具有基本相等的强度，并且获得孔径的表示从所述多个天然采样点开始，其中所述孔的表示的图像具有基本均匀的强度。

26. 发明授权

US07774737B2 Performance in model-based OPC engine utilizing efficient polygon pinning method 失效
公开(公告)号：US07774737B2
公开(公告)日：2010-08-10
申请号：US11756883
申请日：2007-06-01
申请人： Gregg M Gallatin , Emanuel Gofman , Kafai Lai , Mark A. Lavin , Maharaj Mukherjee , Dov Ramm , Alan E. Rosenbluth , Shlomo Shlafman
发明人： Gregg M Gallatin , Emanuel Gofman , Kafai Lai , Mark A. Lavin , Maharaj Mukherjee , Dov Ramm , Alan E. Rosenbluth , Shlomo Shlafman
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： Methods, and a program storage device for executing such methods, for performing model-based optical proximity correction by providing a mask matrix having a region of interest (ROI) and locating a plurality of points of interest within the mask matrix. A first polygon having a number of vertices representative of the located points of interest is computed, followed by determining a spatial relation between its vertices and the ROI. The vertices of the first polygon are then pinned to boundaries of and within the ROI such that a second polygon is formed on the ROI. The process is repeated for all vertices of the first polygon such that the second polygon is collapsed onto the ROI. This collapsed second polygon is then used to correct for optical proximity.

27. 发明申请

US20100003605A1 SYSTEM AND METHOD FOR PROJECTION LITHOGRAPHY WITH IMMERSED IMAGE-ALIGNED DIFFRACTIVE ELEMENT 审中-公开
标题翻译：投影图像的系统和方法与映射图像对齐的差分元素
公开(公告)号：US20100003605A1
公开(公告)日：2010-01-07
申请号：US12168310
申请日：2008-07-07
申请人： Dario Gil , David O. Melville , Alan E. Rosenbluth , Kehan Tian , Jaione Tirapu Azpiroz
发明人： Dario Gil , David O. Melville , Alan E. Rosenbluth , Kehan Tian , Jaione Tirapu Azpiroz
IPC分类号： G03H1/04 , G06F17/50
CPC分类号： G03H1/02 , G03F7/70466 , G03H1/0244 , G03H1/0402 , G03H1/08 , G03H2001/0094 , G03H2001/2615 , G03H2222/47 , G03H2240/56
摘要： A novel system and method and computer program product for exposing a photoresist film with patterns of finer resolution than can physically be projected onto the film in an ordinary image formed at the same wavelength. A hologram structure containing a set of resolvable spatial frequencies is first formed above the photoresist film. If necessary the photoresist is then sensitized. An illuminating wavefront containing a second set of resolvable spatial frequencies is projected through the hologram, forming a new set of transmitted spatial frequencies that expose the photoresist. The transmitted spatial frequencies include sum frequencies of higher frequency than is present in the hologram or illuminating wavefront, increasing the resolution of the exposing pattern. These high spatial frequency transmitted waves can be evanescent, or they can propagate at a steeper obliquity in a higher index medium than is possible in a projected image. A further method is described for designing lithographic masks to fabricate the hologram and to project the illuminating wavefront. In other embodiments, a simple personalization based on Talbot fringes and plasmonic interference is performed.
摘要翻译：一种新颖的系统和方法以及计算机程序产品，用于将光致抗蚀剂膜以比分辨率更高的图案曝光在物理上可投影到以相同波长形成的普通图像中的胶片上。首先在光致抗蚀剂膜上方形成包含一组可分辨空间频率的全息图结构。如果需要，光致抗蚀剂然后被致敏。包含第二组可分辨空间频率的照明波前通过全息图投射，形成一组新的曝光光致抗蚀剂的透射空间频率。所发送的空间频率包括比存在于全息图或照明波前的频率更高的和频，增加曝光图案的分辨率。这些高空间频率的透射波可以是消逝的，或者它们可以在比投影图像中可能的更高的索引介质中更陡的倾斜度下传播。描述了用于设计光刻掩模以制造全息图并投影照明波前的另一种方法。在其他实施例中，执行基于Talbot条纹和等离子体激元干扰的简单个性化。

28. 发明申请

US20090271757A1 DATA CORRECTING HIERARCHICAL INTEGRATED CIRCUIT LAYOUT ACCOMMODATING COMPENSATE FOR LONG RANGE CRITICAL DIMENSION VARIATION 有权
标题翻译：数据校正分层整合电路布局扩展补偿长期关键尺寸变化
公开(公告)号：US20090271757A1
公开(公告)日：2009-10-29
申请号：US12109400
申请日：2008-04-25
申请人： Alan E. Rosenbluth , Ian P. Stobert
发明人： Alan E. Rosenbluth , Ian P. Stobert
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/36
摘要： A solution for performing a data correction on a hierarchical integrated circuit layout is provided. A method includes: receiving a CD compensation map for the long range critical dimension variation prior to the data correction; grouping compensation amounts of the CD compensation into multiple compensation ranges; generating multiple target layers corresponding to the multiple compensation ranges; super-imposing a region of the CD compensation map having a compensation amount falling into a compensation range over a respective target layer to generate a target shape; performing the data correction on the layout to generate a data corrected layout; performing the data correction on the target shape separately to generate a data corrected target shape; and combining the data corrected layout and the data corrected target shape based on the CD compensation map.
摘要翻译：提供了一种用于在分层集成电路布局上执行数据校正的解决方案。一种方法包括：在数据校正之前接收用于长距离临界尺寸变化的CD补偿图; 将CD补偿的补偿量分组为多个补偿范围; 产生对应于多个补偿范围的多个目标层; 超级CD补偿图的区域具有落在相应目标层上的补偿范围内的补偿量以产生目标形状; 在布局上执行数据校正以生成数据校正布局; 分别对目标形状进行数据校正，生成数据校正对象形状; 并且基于CD补偿图组合数据校正布局和数据校正目标形状。

29. 发明申请

US20090123057A1 Method and System for Obtaining Bounds on Process Parameters for OPC-Verification 有权
标题翻译：用于获取OPC验证过程参数边界的方法和系统
公开(公告)号：US20090123057A1
公开(公告)日：2009-05-14
申请号：US11937073
申请日：2007-11-08
申请人： Maharaj Mukherjee , Ioana Graur , Alan E. Rosenbluth
发明人： Maharaj Mukherjee , Ioana Graur , Alan E. Rosenbluth
IPC分类号： G06K9/00
CPC分类号： G06K9/036 , G03F7/70441
摘要： Embodiments of the present invention provide a method of performing printability verification of a mask layout. The method includes creating one or more tight clusters; computing a set of process parameters associated with a point on said mask; comparing said set of process parameters to said one or more tight clusters; and reporting an error when at least one of said process parameters is away from said one or more tight clusters.
摘要翻译：本发明的实施例提供了一种执行掩模布局的可印刷性验证的方法。该方法包括创建一个或多个紧密簇; 计算与所述掩模上的点相关联的一组过程参数; 将所述一组过程参数与所述一个或多个紧密簇进行比较; 并且当至少一个所述过程参数远离所述一个或多个紧密簇时报告错误。

30. 发明授权

US07269817B2 Lithographic process window optimization under complex constraints on edge placement 有权
标题翻译：边缘放置复杂约束下的平版印刷工艺窗口优化
公开(公告)号：US07269817B2
公开(公告)日：2007-09-11
申请号：US10776901
申请日：2004-02-10
申请人： Fook-Luen Heng , Mark A. Lavin , Jin-Fuw Lee , Daniel L. Ostapko , Alan E. Rosenbluth , Nakgeuon Seong
发明人： Fook-Luen Heng , Mark A. Lavin , Jin-Fuw Lee , Daniel L. Ostapko , Alan E. Rosenbluth , Nakgeuon Seong
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A method and system for layout optimization relative to lithographic process windows which facilitates lithographic constraints to be non-localized in order to impart a capability of printing a given circuit with a process window beyond the process windows which are attainable with conventional simplified design rules. Pursuant to the method and system, lithographic capability and process windows are maximized to satisfy local circuit requirements and in order to achieve a maximally efficient layout. In this connection, there is employed a method utilizing a generalized lithographic process window as a measure when layout optimization is extended to a degree beyond that achieved by the simple fixed design rules which are applied to the design rules obtained is the advantage that a lithographic process window is determined purely through the calculation of image intensities and slopes, and as a result, the method can be quite rapid in application because it is possible to take advantage of known methods for rapid calculation of image intensity, and because there is obviated the need for geometrical shape processing during optimization.
摘要翻译：一种用于相对于光刻工艺窗口的布局优化的方法和系统，其有助于光刻约束被非局部化，以便赋予给定电路打印超过可以用常规简化设计规则达到的过程窗口的处理窗口的能力。根据方法和系统，光刻能力和工艺窗口最大化，以满足局部电路要求，并实现最大限度的高效布局。在这方面，采用一种利用广义平版印刷工艺窗口作为测量的方法，当布局优化扩展到超过通过简单的固定设计规则实现的程度时，应用于所获得的设计规则是光刻工艺的优点通过计算图像强度和斜率来确定窗口，结果，该方法在应用中可以相当快速，因为可以利用已知的方法来快速计算图像强度，并且因为不需要用于优化期间的几何形状处理。

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