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21. 发明授权

US06841141B2 System for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen (XFn) compounds for use in cleaning semiconductor processing chambers 失效
标题翻译：用于原位生成用于清洗半导体处理室的氟自由基和/或含氟卤代（XFn）化合物的系统
公开(公告)号：US06841141B2
公开(公告)日：2005-01-11
申请号：US10065219
申请日：2002-09-26
申请人： Jose I. Arno , W. Karl Olander
发明人： Jose I. Arno , W. Karl Olander
IPC分类号： B08B7/00 , C23C16/44 , C01B7/00 , A61L2/00 , C01D3/02
CPC分类号： H01J37/32862 , B08B7/0035 , C23C16/4405
摘要： A system for in-situ generation of fluorine radicals and/or fluorine-containing interhalogen compounds XFn (wherein X is Cl, Br, or I, and n is an odd integer). Such system comprises a fluorine source, a halogen source for supplying halogen species other than fluorine, a chamber for mixing fluorine with halogen species other than fluorine, and an energy source to supply energy to such chamber to facilitate reaction between fluorine and the halogen species other than fluorine. The chamber may be a semiconductor processing chamber, wherein the in situ generated fluorine radicals and/or fluorine-containing interhalogens are employed for cleaning the processing chamber.
摘要翻译：用于原位产生氟自由基和/或含氟卤代化合物XFn（其中X为Cl，Br或I，n为奇整数）的系统。这种系统包括氟源，用于提供除氟之外的卤素物质的卤素源，用于将氟与氟以外的卤素物质混合的室，以及向该室供应能量以促进氟与卤素物质之间的反应的能量源比氟。腔室可以是半导体处理腔室，其中原位产生的氟自由基和/或含氟中间卤素用于清洁处理室。

22. 发明授权

US5972743A Precursor compositions for ion implantation of antimony and ion implantation process utilizing same 失效
标题翻译：用于离子注入锑的前体组合物和利用其的离子注入工艺
公开(公告)号：US5972743A
公开(公告)日：1999-10-26
申请号：US759761
申请日：1996-12-03
申请人： Timothy E. Glassman , Thomas H. Baum , James V. McManus , W. Karl Olander
发明人： Timothy E. Glassman , Thomas H. Baum , James V. McManus , W. Karl Olander
IPC分类号： C23C14/48 , C30B31/00 , C30B31/22 , H01L21/265 , H01L21/338 , H01L21/331
CPC分类号： H01L21/26513 , C23C14/48 , C30B31/00 , C30B31/22 , Y10S438/914
摘要： A method for n-doping a material layer with antimony, comprising ion implanting antimony from an antimony precursor composition including a compound of the formula SbX.sub.n ((CH.sub.2).sub.y SiR.sub.3).sub.n-3, wherein: n is an integer having a value of 1 or 2; y is an integer having a value of from 1 to 3 inclusive; each R is independently selected from C.sub.1 -C.sub.4 alkyl; and each X is independently selected from halo substituents. The antimony precursor composition may further include a fluorine-containing auxiliary gas, to effect in situ cleaning of the ionization chamber during ion implantation.
摘要翻译：一种用锑掺杂材料层的方法，包括从包含式SbXn（（CH 2）y SiR 3）n-3的化合物的锑前体组合物离子注入锑，其中：n是具有值1的整数或 2; y为1〜3的整数，每个R独立地选自C 1 -C 4烷基; 并且每个X独立地选自卤素取代基。锑前体组合物还可以包括含氟辅助气体，以在离子注入期间实现电离室的原位清洁。

23. 发明授权

US5914091A Point-of-use catalytic oxidation apparatus and method for treatment of voc-containing gas streams 失效
标题翻译：使用用催化氧化装置和处理含声气流的方法
公开(公告)号：US5914091A
公开(公告)日：1999-06-22
申请号：US602134
申请日：1996-02-15
申请人： Mark R. Holst , W. Karl Olander , Glenn M. Tom
发明人： Mark R. Holst , W. Karl Olander , Glenn M. Tom
IPC分类号： B01D53/72 , B01D53/86 , F01N3/10 , B01J8/00
CPC分类号： B01D53/8668 , B01D53/72
摘要： A point-of-use catalytic oxidation system, for treatment of a VOC-containing gas stream, including: a heat exchanger for heat exchange of a VOC-containing gas stream and a VOC-reduced gas stream at higher temperature than the VOC-containing gas stream, for heat recovery from the VOC-reduced gas stream for cooling thereof, to preheat the VOC-containing gas stream; a supplemental heater for supplemental heating of preheated VOC-containing gas, if and as required, to an elevated temperature for catalytic oxidation of VOC therein; and a bed of catalytic oxidizer material for catalytic oxidation of VOC in the VOC-containing gas stream, to yield the VOC-reduced gas stream. The heat exchanger, supplemental heater, and bed of catalytic oxidizer material are sized, constructed, arranged, and operated to effect autothermal catalytic oxidation of VOC in the bed of catalytic oxidizer material. The system may further employ a smoother to attenuate influent VOC spikes in the feed gas, and/or a concentrator to concentrate the feed gas VOC species for high efficiency VOC removal in the catalytic oxidation.
摘要翻译：一种用于处理含VOC的气流的使用点催化氧化系统，包括：用于在比含有VOC的气体的温度高的温度下热交换含VOC的气体流和VOC还原气流的热交换器气流，用于从VOC还原气流中回收热量用于冷却，以预热含VOC的气流; 一种补充加热器，用于在预先含有VOC的气体的温度下，根据需要对其中的VOC进行催化氧化的升高温度进行补充加热; 以及用于在含VOC的气流中催化氧化VOC的催化氧化剂床，以产生VOC还原气流。催化氧化剂材料的热交换器，补充加热器和床的尺寸，构造，布置和操作以在催化氧化剂床的床中进行VOC的自热催化氧化。该系统可以进一步采用更平滑的方式来减少进料气体中的流入VOC峰值，和/或浓缩器将浓缩进料气体VOC物质用于催化氧化中的高效挥发性有机化合物。

24. 发明授权

US5704967A Fluid storage and delivery system comprising high work capacity physical sorbent 失效
标题翻译：流体储存和输送系统包括高工作能力的物理吸附剂
公开(公告)号：US5704967A
公开(公告)日：1998-01-06
申请号：US650633
申请日：1996-05-20
申请人： Glenn M. Tom , James V. McManus , W. Karl Olander
发明人： Glenn M. Tom , James V. McManus , W. Karl Olander
IPC分类号： B01D53/04 , F17C7/04
CPC分类号： B01D53/0407 , F17C7/04 , B01D2253/102 , B01D2259/4525 , F17C2201/0109 , F17C2201/0114 , F17C2201/032 , F17C2201/058 , F17C2201/06 , F17C2205/0326 , F17C2205/0329 , F17C2205/0338 , F17C2205/0385 , F17C2205/0391 , F17C2221/011 , F17C2221/037 , F17C2223/0123 , F17C2250/043 , F17C2250/0636 , F17C2270/02 , F17C2270/0518
摘要： An adsorption-desorption apparatus, for storage and dispensing of a sorbable gas, wherein a physical sorbent medium bearing the adsorbed gas to be selectively dispensed is delivered by pressure differential desorption and/or thermal desorption of the sorbate gas from the sorbent material. The sorbent material preferably comprises a material which is characterized by a Sorbent Working Capacity, measured for arsine at 40 Torr and at 650 Torr, of at least 50 grams arsine per liter of bed of the sorbent material.
摘要翻译：用于储存和分配可吸入气体的吸附 - 脱附装置，其中通过吸附剂气体从吸附剂材料的压差解吸和/或热解吸提供携带要选择性分配的吸附气体的物理吸附剂介质。吸附剂材料优选地包括一种材料，其特征在于吸收剂工作能力，在40乇和650乇下测量至少50克胂/升吸附剂材料床的胂。

25. 发明授权

US09383064B2 Ventilation gas management systems and processes 有权
标题翻译：通风天然气管理系统和流程
公开(公告)号：US09383064B2
公开(公告)日：2016-07-05
申请号：US13522000
申请日：2011-01-11
申请人： W. Karl Olander , Paul J. Marganski
发明人： W. Karl Olander , Paul J. Marganski
IPC分类号： B01D53/02 , F17C13/08 , F17C11/00 , B01D53/04
CPC分类号： F24F11/04 , B01D53/04 , B01D2253/102 , B01D2258/0216 , F17C11/00 , F17C11/005 , F17C11/007 , F17C13/084 , F17C2201/0109 , F17C2201/032 , F17C2201/056 , F17C2205/0111 , F17C2205/0126 , F17C2205/0142 , F17C2205/0176 , F17C2205/018 , F17C2205/0338 , F17C2205/0394 , F17C2250/032 , F17C2250/043 , F17C2250/0439 , F17C2250/0469 , F17C2250/0491 , F17C2250/0636 , F17C2260/044 , F17C2270/0518 , F24F11/0012 , F24F11/30 , F24F11/74 , F24F2011/0042 , F24F2110/10 , F24F2110/40 , Y02P80/156
摘要： A ventilation gas management system and process for an enclosure adapted to contain fluid supply vessel(s) and through which ventilation gas is flowed to provide safe operation in the event of leakage of fluid from a vessel. Ventilation gas flow is modulated to accommodate various hazard levels associated with the deployment and operation of such enclosure containing fluid supply vessel(s), e.g., a gas box or gas cabinet in a semiconductor manufacturing facility, thereby achieving reduction in ventilation gas requirements otherwise required for such deployment and operation.
摘要翻译：一种通风气体管理系统和适用于容纳流体供应容器的外壳的过程，并且在流体从容器泄漏的情况下通过该通气气体流动以提供安全的操作。调节通风气流以适应与包含流体供应容器（例如半导体制造设备中的气体箱或气体柜）的这种外壳的展开和操作相关的各种危险水平，从而实现另外需要的通气气体需求的减少用于此类部署和操作。

26. 发明授权

US07951225B2 Fluid storage and dispensing systems, and fluid supply processes comprising same 有权
标题翻译：流体储存和分配系统以及包括该流体储存和分配系统的流体供应过程
公开(公告)号：US07951225B2
公开(公告)日：2011-05-31
申请号：US11913553
申请日：2006-05-03
申请人： W. Karl Olander , James V. McManus , Steven J. Hultquist , Jose I. Arno , Peter C. Van Buskirk
发明人： W. Karl Olander , James V. McManus , Steven J. Hultquist , Jose I. Arno , Peter C. Van Buskirk
IPC分类号： B01D53/02
CPC分类号： F17C11/00 , F17C2201/0109 , F17C2201/032 , F17C2201/035 , F17C2201/054 , F17C2201/056 , F17C2201/058 , F17C2203/0639 , F17C2203/0678 , F17C2205/0184 , F17C2205/0326 , F17C2205/0329 , F17C2205/0338 , F17C2205/0391 , F17C2221/011 , F17C2221/013 , F17C2221/014 , F17C2221/031 , F17C2221/033 , F17C2221/035 , F17C2221/037 , F17C2223/0123 , F17C2223/013 , F17C2223/033 , F17C2223/035 , F17C2225/0123 , F17C2225/013 , F17C2225/033 , F17C2225/035 , F17C2225/038 , F17C2227/0114 , F17C2227/0135 , F17C2227/0157 , F17C2250/032 , F17C2250/0443 , F17C2250/0636 , F17C2270/0168 , F17C2270/02 , F17C2270/0518
摘要： Fluid storage and dispensing systems, and processes for supplying fluids for use thereof. Various arrangements of fluid storage and dispensing systems are described, involving permutations of the physical sorbent-containing fluid storage and dispensing vessels and internal regulator-equipped fluid storage and dispensing vessels. The systems and processes are applicable to a wide variety of end-use applications, including storage and dispensing of hazardous fluids with enhanced safety. In a specific end-use application, reagent gas is dispensed to a semiconductor manufacturing facility from a large-scale, fixedly positioned fluid storage and dispensing vessel containing physical sorbent holding gas at subatmospheric pressure, with such vessel being refillable from a safe gas source of refill gas, as disclosed herein.
摘要翻译：流体储存和分配系统以及用于供应流体的方法。描述了流体存储和分配系统的各种布置，包括物理吸附剂流体存储和分配容器和内部调节器装备的流体存储和分配容器的排列。这些系统和工艺适用于各种各样的最终用途应用，包括存储和分配危险液体，并具有更高的安全性。在特定的最终用途应用中，反应气体从大规模固定位置的液体储存和分配容器中分配到半导体制造设备，所述流体储存和分配容器含有处于低于大气压的气体的物理吸附剂，该容器可以从安全气体源再填充气体，如本文所公开的。

27. 发明授权

US07364603B2 Method and apparatus for the abatement of toxic gas components from a semiconductor manufacturing process effluent stream 失效
标题翻译：用于从半导体制造工艺流出物流中减少有毒气体组分的方法和装置
公开(公告)号：US07364603B2
公开(公告)日：2008-04-29
申请号：US10928977
申请日：2004-08-27
申请人： Joseph D. Sweeney , Paul J. Marganski , W. Karl Olander
发明人： Joseph D. Sweeney , Paul J. Marganski , W. Karl Olander
IPC分类号： B01D53/04 , B01D53/68 , B01D59/26
CPC分类号： B01D53/0415 , B01D53/0407 , B01D2253/10 , B01D2253/102 , B01D2253/104 , B01D2253/108 , B01D2253/112 , B01D2253/25 , B01D2253/304 , B01D2253/3425 , B01D2257/202 , B01D2257/2022 , B01D2257/2025 , B01D2257/2027 , B01D2257/204 , B01D2257/2042 , B01D2257/2045 , B01D2257/2047 , B01D2257/206 , B01D2257/302 , B01D2257/406 , B01D2257/553 , B01D2257/70 , B01D2257/706 , B01D2258/0216 , B01D2259/40086 , B01D2259/4143 , B01D2259/4146
摘要： An apparatus and process for abating at least one acid or hydride gas component or by-product thereof, from an effluent stream deriving from a semiconductor manufacturing process, comprising, a first sorbent bed material having a high capacity sorbent affinity for the acid or hydride gas component, a second and discreet sorbent bed material having a high capture rate sorbent affinity for the same gas component, and a flow path joining the process in gas flow communication with the sorbent bed materials such that effluent is flowed through the sorbent beds, to reduce the acid or hydride gas component. The first sorbent bed material preferably comprises basic copper carbonate and the second sorbent bed preferably comprises at least one of, CuO, AgO, CoO, CO3O4, ZnO, MnO2 and mixtures thereof.
摘要翻译：一种用于从源自半导体制造工艺的流出物流中减轻至少一种酸或氢气体组分或其副产物的装置和方法，包括：具有对酸或氢化物气体具有高容量吸附剂亲和性的第一吸附剂床材料组分，具有对相同气体组分的高捕获率吸附剂亲和力的第二和离散的吸附剂床材料，以及将流程连接到与吸附剂床材料气流连通的流路，使得流出物流过吸附剂床，以减少酸或氢气组分。第一吸附剂床材料优选包含碱式碳酸铜，第二吸附剂床优选包含CuO，AgO，CoO，CO 3 O 4，ZnO，MnO 2＆lt; 2＆gt;及其混合物。

28. 发明授权

US07105037B2 Semiconductor manufacturing facility utilizing exhaust recirculation 有权
公开(公告)号：US07105037B2
公开(公告)日：2006-09-12
申请号：US10672051
申请日：2003-09-26
申请人： W. Karl Olander , Joseph D. Sweeney , Luping Wang
发明人： W. Karl Olander , Joseph D. Sweeney , Luping Wang
IPC分类号： F24F3/16
CPC分类号： C23C14/48 , B01D53/74 , C23C14/564 , Y10S438/905 , Y10S438/909
摘要： A semiconductor manufacturing process facility requiring use therein of air exhaust for its operation, such facility including clean room and gray room components, with the clean room having at least one semiconductor manufacturing tool therein, and wherein air exhaust is flowed through a region of the clean room. The facility includes an air exhaust treatment apparatus arranged to (i) receive air exhaust after flow thereof through said region of said clean room, (ii) produce a treated air exhaust, and (iii) recirculate the treated air exhaust to an ambient air environment in the facility, e.g., to the gray room of the facility.

29. 发明授权

US06857447B2 Pressure-based gas delivery system and method for reducing risks associated with storage and delivery of high pressure gases 有权
标题翻译：基于压力的气体输送系统和降低高压气体储存和输送相关风险的方法
公开(公告)号：US06857447B2
公开(公告)日：2005-02-22
申请号：US10166242
申请日：2002-06-10
申请人： W. Karl Olander , Matthew B. Donatucci , Luping Wang , Michael J. Wodjenski
发明人： W. Karl Olander , Matthew B. Donatucci , Luping Wang , Michael J. Wodjenski
IPC分类号： F17C7/00 , F17C5/00 , B08B9/027 , B08B5/00 , G05B11/01 , G06F15/00
CPC分类号： F17C13/04 , F17C5/00 , F17C2201/0109 , F17C2201/0119 , F17C2201/032 , F17C2201/056 , F17C2201/058 , F17C2205/0111 , F17C2205/0176 , F17C2205/0326 , F17C2205/0332 , F17C2205/0335 , F17C2205/0338 , F17C2205/0341 , F17C2205/0391 , F17C2205/0394 , F17C2221/012 , F17C2221/014 , F17C2221/016 , F17C2221/037 , F17C2221/05 , F17C2223/0123 , F17C2223/036 , F17C2225/0123 , F17C2225/033 , F17C2225/035 , F17C2225/038 , F17C2227/044 , F17C2227/045 , F17C2250/032 , F17C2250/043 , F17C2260/036 , F17C2260/044 , F17C2270/0518 , Y02E60/321 , Y10T137/0324 , Y10T137/0419 , Y10T137/2569 , Y10T137/4259 , Y10T137/7759 , Y10T137/7761 , Y10T137/7762 , Y10T137/7793 , Y10T137/8158 , Y10T137/87249
摘要： Apparatus and method for dispensing a gas using a gas source coupled in selective flow relationship with a gas manifold. The gas manifold includes flow circuitry for discharging gas to a gas-using zone, and the gas source includes a pressure-regulated gas source vessel containing the gas at superatmospheric pressure. The pressure-regulated gas source vessel can be arranged with a pressure regulator at or within the vessel and a flow control valve coupled in flow relationship to the vessel, so that gas dispensed from the vessel flows through the regulator prior to flow through the flow control valve, and into the gas manifold. The apparatus and method permit an enhancement of the safety of storage and dispensing of toxic or otherwise hazardous gases used in semiconductor processes.
摘要翻译：使用与气体歧管以选择性流动关系耦合的气体源分配气体的装置和方法。气体歧管包括用于将气体排放到气体使用区域的流动回路，并且气体源包括在超大气压下容纳气体的压力调节气体源容器。压力调节的气体源容器可以布置有在容器内或容器内的压力调节器，以及与容器流动关系的流量控制阀，使得从容器分配的气体在流过流量控制器之前流过调节器阀，并进入气体歧管。该装置和方法允许提高半导体工艺中使用的有毒或其他有害气体的储存和分配的安全性。

30. 发明授权

US06845619B2 Integrated system and process for effluent abatement and energy generation 有权
标题翻译：污水排放和能源生成的综合系统和流程
公开(公告)号：US06845619B2
公开(公告)日：2005-01-25
申请号：US10316577
申请日：2002-12-11
申请人： W. Karl Olander
发明人： W. Karl Olander
IPC分类号： B01D53/00 , B01D53/86 , F02C6/10 , H01M8/06 , H01M8/22 , F01K25/06
CPC分类号： F02C6/10 , B01D53/002 , B01D53/8634 , B01D2257/108 , B01D2257/708 , H01M8/0606 , H01M8/0662 , H01M8/0687 , H01M8/222
摘要： The present invention relates to an effluent abatement/energy generation system, as well as a method, for abating a process effluent gas stream that contains one or more target compounds such as hydrogen gas, ammonia gas, isopropanol, and other volatile organic compounds that are readily oxidizable, and for concurrently generating energy using such process effluent gas stream. Such effluent abatement/energy generation system comprises a purification unit for removing components other than such target compounds from the process effluent gas stream, and an energy generation unit for generating thermal and/or electrical energy. Such energy generation unit may comprise a combustion assembly, such as a microturbine, for direct combustion or catalytic combustion of the target compounds to generate thermal and/or electrical energy. Such energy generation unit may also comprise a fuel cell for using the target compounds to generate electrical energy.
摘要翻译：本发明涉及一种污水消除/能量产生系统，以及一种用于减轻含有一种或多种目标化合物如氢气，氨气，异丙醇和其它挥发性有机化合物的工艺废气流的方法，易于氧化，并且使用这种工艺废气流同时产生能量。这种污水消除/能量产生系统包括用于从工艺废气流中除去除了这些目标化合物之外的组分的净化单元和用于产生热能和/或电能的能量产生单元。这种能量产生单元可以包括燃烧组件，例如微型涡轮机，用于目标化合物的直接燃烧或催化燃烧以产生热能和/或电能。这种能量产生单元还可以包括用于使用目标化合物产生电能的燃料电池。

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