专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08399865B2 Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system 有权
公开(公告)号：US08399865B2
公开(公告)日：2013-03-19
申请号：US13567571
申请日：2012-08-06
申请人： Robert Kaim , Joseph D. Sweeney , Anthony M. Avila , Richard S. Ray
发明人： Robert Kaim , Joseph D. Sweeney , Anthony M. Avila , Richard S. Ray
IPC分类号： H01J37/317 , H01L21/265
CPC分类号： H01L21/2225 , F17C7/00 , H01J37/08 , H01J37/3002 , H01J37/3171 , H01J2237/022 , H01J2237/304 , H01L21/223 , H01L21/26506 , Y02E60/321 , Y10T428/13
摘要： An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.

2. 发明授权

US08237134B2 Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system 有权
标题翻译：用于在离子注入系统中增加离子源的寿命和性能的方法和装置
公开(公告)号：US08237134B2
公开(公告)日：2012-08-07
申请号：US13401527
申请日：2012-02-21
申请人： Robert Kaim , Joseph D. Sweeney , Anthony M. Avila , Richard S. Ray
发明人： Robert Kaim , Joseph D. Sweeney , Anthony M. Avila , Richard S. Ray
IPC分类号： H01J37/317 , H01L21/265
CPC分类号： H01L21/2225 , F17C7/00 , H01J37/08 , H01J37/3002 , H01J37/3171 , H01J2237/022 , H01J2237/304 , H01L21/223 , H01L21/26506 , Y02E60/321 , Y10T428/13
摘要： An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.
摘要翻译：通过利用同位素富集的掺杂剂材料，或通过利用具有有效提供这种增强作用的补充气体的掺杂剂材料，离子注入系统和工艺，离子注入系统的离子源的性能和寿命得到增强。

3. 发明申请

US20120142174A1 METHOD AND APPARATUS FOR ENHANCED LIFETIME AND PERFORMANCE OF ION SOURCE IN AN ION IMPLANTATION SYSTEM 有权
公开(公告)号：US20120142174A1
公开(公告)日：2012-06-07
申请号：US13401527
申请日：2012-02-21
申请人： Robert KAIM , Joseph D. SWEENEY , Anthony M. AVILA , Richard S. RAY
发明人： Robert KAIM , Joseph D. SWEENEY , Anthony M. AVILA , Richard S. RAY
IPC分类号： H01L21/265 , C09K3/00
CPC分类号： H01L21/2225 , F17C7/00 , H01J37/08 , H01J37/3002 , H01J37/3171 , H01J2237/022 , H01J2237/304 , H01L21/223 , H01L21/26506 , Y02E60/321 , Y10T428/13
摘要： An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.

4. 发明申请

US20120111374A1 ION IMPLANTATION TOOL CLEANING APPARATUS AND METHOD 审中-公开
标题翻译：离子植入工具清洁装置和方法
公开(公告)号：US20120111374A1
公开(公告)日：2012-05-10
申请号：US13291342
申请日：2011-11-08
申请人： Joseph R. Despres , James V. McManus , Richard D. Chism , Edward E. Jones , Joseph D. Sweeney , Steven G. Sergi , Ying Tang , Michael J. Wodjenski , Richard S. Ray , Barry Lewis Chambers
发明人： Joseph R. Despres , James V. McManus , Richard D. Chism , Edward E. Jones , Joseph D. Sweeney , Steven G. Sergi , Ying Tang , Michael J. Wodjenski , Richard S. Ray , Barry Lewis Chambers
IPC分类号： B08B3/00 , G01N25/00
CPC分类号： H01L21/67028 , H01J37/02 , H01J37/3171 , H01J2237/006 , H01J2237/022
摘要： Apparatus and methods for cleaning ion implanters and/or components thereof are described, utilizing cleaning agents reacted with residue deposits to effect removal thereof. An endpoint detection apparatus and method are also disclosed, which may be integrated in the cleaning apparatus and methods to provide highly efficient utilization of the cleaning agent and avoidance of deleterious effects that otherwise can occur when cleaning agents are continued to be exposed to an implanter or components thereof after cleaning has been completed.
摘要翻译：描述了用于清洁离子注入机和/或其组分的装置和方法，利用与残余物沉积物反应以清除其的清洁剂。还公开了端点检测装置和方法，其可以集成在清洁装置和方法中，以提供清洁剂的高效利用并避免当清洁剂继续暴露于注入机时可能发生的有害影响，或清洁后的部件已经完成。

5. 发明授权

US09205392B2 Apparatus and method for preparation of compounds or intermediates thereof from a solid material, and using such compounds and intermediates 有权
标题翻译：从固体材料制备化合物或其中间体的装置和方法，以及使用这些化合物和中间体
公开(公告)号：US09205392B2
公开(公告)日：2015-12-08
申请号：US13219706
申请日：2011-08-28
申请人： Oleg Byl , Edward E. Jones , Chiranjeevi Pydi , Joseph D. Sweeney
发明人： Oleg Byl , Edward E. Jones , Chiranjeevi Pydi , Joseph D. Sweeney
IPC分类号： B01J19/00 , B01J8/02 , B01J8/04 , C01B35/06 , B01J8/00 , C01B35/00 , C01B35/02
CPC分类号： B01J8/0285 , B01J8/0465 , B01J2208/00017 , B01J2208/00389 , B01J2208/00433 , B01J2208/00539 , C01B35/061
摘要： An apparatus is described, as including a reaction region for contacting a reactant gas with a reactive solid under conditions effective to form an intermediate product, and an opening for allowing an unreacted portion of the gaseous reagent and the intermediate product to exit the reaction region. The apparatus can be beneficially employed to form a final product as a reaction product of the intermediate product and the reactant gas. The reaction of the reactant gas and reactive solid can be conducted in a first reaction zone, with the reaction of the reactant gas and intermediate product conducted in a second reaction zone. In a specific implementation, the reaction of the reactant gas and intermediate product is reversible, and the reactant gas and intermediate product are flowed to the second reaction zone at a controlled rate or in a controlled manner, to suppress back reaction forming the reactive solid.
摘要翻译：描述了一种装置，其包括用于在有效形成中间产物的条件下使反应气体与反应性固体接触的反应区域，以及允许气态试剂和中间产物的未反应部分离开反应区域的开口。该设备可以有利地用于形成作为中间产物和反应气体的反应产物的最终产物。反应气体和反应性固体的反应可以在第一反应区进行，反应气体和中间产物的反应在第二反应区中进行。在具体实施方案中，反应气体和中间产物的反应是可逆的，并且反应物气体和中间产物以受控的速率或受控的方式流到第二反应区，以抑制形成反应性固体的反应。

6. 发明授权

US08598022B2 Isotopically-enriched boron-containing compounds, and methods of making and using same 有权
公开(公告)号：US08598022B2
公开(公告)日：2013-12-03
申请号：US13300575
申请日：2011-11-19
申请人： Robert Kaim , Joseph D. Sweeney , Oleg Byl , Sharad N. Yedave , Edward E. Jones , Peng Zou , Ying Tang , Barry Lewis Chambers , Richard S. Ray
发明人： Robert Kaim , Joseph D. Sweeney , Oleg Byl , Sharad N. Yedave , Edward E. Jones , Peng Zou , Ying Tang , Barry Lewis Chambers , Richard S. Ray
IPC分类号： H01L21/425
CPC分类号： H01J37/3171 , C01B35/00 , C01B35/061 , C01P2006/88 , H01J2237/006 , H01J2237/08 , H01J2237/31701 , H01L21/265 , Y02P20/134
摘要： An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

7. 发明申请

US20130125999A1 ENDPOINT DETERMINATION FOR CAPILLARY-ASSISTED FLOW CONTROL 有权
标题翻译：毛细管理流量控制的终点确定
公开(公告)号：US20130125999A1
公开(公告)日：2013-05-23
申请号：US13704612
申请日：2011-06-18
申请人： Joseph D. Sweeney , Anthony M. Avila , Michael J. Wodjenski , Joseph R. Despres , Thomas H. Baum
发明人： Joseph D. Sweeney , Anthony M. Avila , Michael J. Wodjenski , Joseph R. Despres , Thomas H. Baum
IPC分类号： F17D3/00
CPC分类号： F17D3/01 , F17D3/00 , G05D7/0635 , H01J37/3171 , H01J2237/006 , H01J2237/30466 , H01L21/67017 , H01L21/67253 , Y10T137/0324 , Y10T137/86389
摘要： Apparatus and method for determining endpoint of a fluid supply vessel in which fluid flow is controlled through a flow passage disposed in an interior volume of the fluid supply vessel with a static flow restricting device and a selectively actuatable valve element upon establishing fluid flow. The endpoint determination can be employed to terminate fluid supply from the fluid supply vessel and/or to switch from a fluid-depleted supply vessel to a fresh vessel for continuity or renewal of fluid supply operation. The apparatus and method are suitable for use with fluidutilizing apparatus such as ion implanters.
摘要翻译：用于确定流体供应容器的端点的装置和方法，其中通过设置在流体供应容器的内部容积中的流动通道具有静态流动限制装置和在建立流体流动时可选择性致动的阀元件来控制流体流动。端点确定可以用于终止从流体供应容器供应的流体和/或从流体耗尽的供应容器切换到新鲜的容器，以便连续或更新流体供应操作。该设备和方法适用于离子注入机等流体化处理装置。

8. 发明申请

US20120108044A1 ISOTOPICALLY-ENRICHED BORON-CONTAINING COMPOUNDS, AND METHODS OF MAKING AND USING SAME 有权
标题翻译：同位素丰富的含硼化合物及其制备方法和使用方法
公开(公告)号：US20120108044A1
公开(公告)日：2012-05-03
申请号：US13300575
申请日：2011-11-19
申请人： Robert Kaim , Joseph D. Sweeney , Oleg Byl , Sharad N. Yedave , Edward E. Jones , Peng Zou , Ying Tang , Barry Lewis Chambers , Richard S. Ray
发明人： Robert Kaim , Joseph D. Sweeney , Oleg Byl , Sharad N. Yedave , Edward E. Jones , Peng Zou , Ying Tang , Barry Lewis Chambers , Richard S. Ray
IPC分类号： H01L21/265 , G21K5/00
CPC分类号： H01J37/3171 , C01B35/00 , C01B35/061 , C01P2006/88 , H01J2237/006 , H01J2237/08 , H01J2237/31701 , H01L21/265 , Y02P20/134
摘要： An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.
摘要翻译：包含两个或更多个硼原子和至少一个氟原子的同位素富集的含硼化合物，其中至少一个硼原子含有所需的硼的同位素，其浓度或比例大于天然丰度浓度或比率。该化合物可以具有化学式B2F4。对这些化合物的合成方法和使用这种化合物的离子注入方法进行了描述，以及储存和分配容器，其中有利地含有同位素富集的含硼化合物用于随后的分配用途。

9. 发明申请

US20120051994A1 APPARATUS AND METHOD FOR PREPARATION OF COMPOUNDS OR INTERMEDIATES THEREOF FROM A SOLID MATERIAL, AND USING SUCH COMPOUNDS AND INTERMEDIATES 有权
标题翻译：从固体材料中制备化合物或其中间体的装置和方法，以及使用这些化合物和中间体
公开(公告)号：US20120051994A1
公开(公告)日：2012-03-01
申请号：US13219706
申请日：2011-08-28
申请人： Oleg Byl , Edward E. Jones , Chiranjeevi Pydi , Joseph D. Sweeney
发明人： Oleg Byl , Edward E. Jones , Chiranjeevi Pydi , Joseph D. Sweeney
IPC分类号： C01B35/06 , G05B1/00 , B01J19/00
CPC分类号： B01J8/0285 , B01J8/0465 , B01J2208/00017 , B01J2208/00389 , B01J2208/00433 , B01J2208/00539 , C01B35/061
摘要： An apparatus is described, as including a reaction region for contacting a reactant gas with a reactive solid under conditions effective to form an intermediate product, and an opening for allowing an unreacted portion of the gaseous reagent and the intermediate product to exit the reaction region. The apparatus can be beneficially employed to form a final product as a reaction product of the intermediate product and the reactant gas. The reaction of the reactant gas and reactive solid can be conducted in a first reaction zone, with the reaction of the reactant gas and intermediate product conducted in a second reaction zone. In a specific implementation, the reaction of the reactant gas and intermediate product is reversible, and the reactant gas and intermediate product are flowed to the second reaction zone at a controlled rate or in a controlled manner, to suppress back reaction forming the reactive solid.
摘要翻译：描述了一种装置，其包括用于在有效形成中间产物的条件下使反应气体与反应性固体接触的反应区域，以及允许气态试剂和中间产物的未反应部分离开反应区域的开口。该设备可以有利地用于形成作为中间产物和反应气体的反应产物的最终产物。反应气体和反应性固体的反应可以在第一反应区进行，反应气体和中间产物的反应在第二反应区中进行。在具体实施方案中，反应气体和中间产物的反应是可逆的，并且反应物气体和中间产物以受控的速率或受控的方式流到第二反应区，以抑制形成反应性固体的反应。

10. 发明申请

US20110259366A1 ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
标题翻译：半导体加工系统中的离子源清洁
公开(公告)号：US20110259366A1
公开(公告)日：2011-10-27
申请号：US12867245
申请日：2009-02-11
申请人： Joseph D. Sweeney , Sharad N. Yedave , Oleg Byl , Robert Kaim , David Eldridge , Steven Sergi , Lin Feng , Steven E. Bishop , W. Karl Olander , Ying Tang
发明人： Joseph D. Sweeney , Sharad N. Yedave , Oleg Byl , Robert Kaim , David Eldridge , Steven Sergi , Lin Feng , Steven E. Bishop , W. Karl Olander , Ying Tang
IPC分类号： B08B7/00 , H01L21/265 , B08B5/00
CPC分类号： H01J37/3171 , C23C14/48 , C23C14/54 , C23C14/564 , H01J37/08 , H01J37/16 , H01J37/18 , H01J2237/082 , H01J2237/22
摘要： Cleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.
摘要翻译：使用能够在电弧室的离子源中生长/蚀刻细丝的反应性清洁剂来清洁离子注入系统或其组分，通过适当地控制电弧室中的温度以实现所需的长丝生长或替代的细丝蚀刻。还描述了使用诸如XeFx，WFx，AsFx，PFx和TaFx的反应性气体，其中x具有化学计量学上适当的值或值范围，用于清除离子注入器或植入物的组分的原位或非原生境清洁布置，在环境温度，升高的温度或等离子体条件下。在特定的反应性清洁剂中，BrF3被描述为用于在原位或非原位清洁装置中清洁离子注入系统或其组分。还描述了一种清洁离子注入系统的前沿以从所述前线至少部分去除电离相关沉积物的方法，包括使所述前沿与清洁气体接触，其中所述清洁气体与所述沉积物化学反应。还描述了改进离子注入系统的性能和延长寿命的方法，包括使阴极与气体混合物接触。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式