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21. 发明授权

US07344652B2 Plasma etching method 失效
标题翻译：等离子蚀刻法
公开(公告)号：US07344652B2
公开(公告)日：2008-03-18
申请号：US11487516
申请日：2006-07-17
申请人： Kazuya Nagaseki , Takanori Mimura , Hiroki Miyajima
发明人： Kazuya Nagaseki , Takanori Mimura , Hiroki Miyajima
IPC分类号： H01L21/00 , B44C1/22
CPC分类号： H01L21/67069 , H01J37/32623 , H01L21/3065 , H01L21/3081 , H01L21/3083
摘要： An etching method for forming a recess (220) having an opening dimension (R) of millimeter order in an object (212) to be etched such as a semiconductor wafer. A mask (214) having an opening corresponding to the recess (220) is formed on the object (212). The object (212) with the mask (214) is placed in a processing vessel for plasma etching and etched in it using a plasma. The material of the portion around the opening of the mask (214) is the same as the material, for example, silicon of the object (212). Hence, the recess (220) can be so formed as not to form a sub-trench shape (a shape formed by etching the periphery of which is deeper than the center) substantially in the bottom (222).
摘要翻译：一种蚀刻方法，用于在被蚀刻的物体（212）中形成具有毫米级的开口尺寸（R）的凹部（220），例如半导体晶片。在物体（212）上形成具有对应于凹部（220）的开口的面罩（214）。将具有掩模（214）的物体（212）放置在用于等离子体蚀刻的处理容器中，并使用等离子体蚀刻在其中。掩模（214）的开口周围部分的材料与物体（212）的材料（例如硅）相同。因此，凹部（220）可以形成为不形成基本上在底部（222）中形成副沟槽形状（通过蚀刻其周边比中心更深的形状形成的形状）。

22. 发明授权

US07338576B2 Plasma processing device 失效
标题翻译：等离子处理装置
公开(公告)号：US07338576B2
公开(公告)日：2008-03-04
申请号：US10490027
申请日：2002-09-19
申请人： Hiroo Ono , Koichi Tateshita , Masanobu Honda , Kazuya Nagaseki , Daisuke Hayashi
发明人： Hiroo Ono , Koichi Tateshita , Masanobu Honda , Kazuya Nagaseki , Daisuke Hayashi
IPC分类号： H01L21/00
CPC分类号： H01J37/32623 , H01J37/32688
摘要： Each magnet segment 22 of a magnetic field forming mechanism 21 is constructed such that, after the magnetic pole of each magnet segment 22 set to face a vacuum chamber 1 as shown in FIG. 3A, adjoining magnet segments 22 are synchronously rotated in opposite directions, and hence every other magnet element 22 is rotated in the same direction as shown in FIGS. 3B, 3C to thereby control the status of a multi-pole magnetic field formed in the vacuum chamber 1 and surrounding a semiconductor wafer W. Therefore, the status of a multi-pole magnetic field can be easily controlled and set appropriately according to a type of plasma processing process to provide a good processing easily.
摘要翻译：磁场形成机构21的每个磁体段22被构造成使得在每个磁体段22的磁极设置成面对如图1所示的真空室1之后。如图3A所示，相邻的磁体段22沿相反方向同步旋转，因此每隔一个磁体元件22沿与图1和图2所示相同的方向旋转。 3 B，3 C，从而控制形成在真空室1中并围绕半导体晶片W的多极磁场的状态。因此，可以容易地控制并设置多极磁场的状态，根据一种等离子体处理工艺，容易提供良好的加工。

23. 发明授权

US07230202B2 Plasma processing apparatus, electrode unit, feeder member and radio frequency feeder rod 有权
标题翻译：等离子体处理装置，电极单元，馈线构件和射频馈线棒
公开(公告)号：US07230202B2
公开(公告)日：2007-06-12
申请号：US10927587
申请日：2004-08-27
申请人： Daisuke Hayashi , Kazuya Nagaseki , Shinji Himori , Atsushi Matsuura , Ryo Nonaka
发明人： Daisuke Hayashi , Kazuya Nagaseki , Shinji Himori , Atsushi Matsuura , Ryo Nonaka
IPC分类号： B23K9/00
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32532
摘要： Disclosed herein is a plasma processing apparatus that introduces a process gas into an airtight processing container, that applies a radio frequency power to generate plasma, and that conducts a plasma process to an object to be processed arranged in the processing container. The plasma processing apparatus includes: an electrode unit arranged in the processing container, the electrode unit having an electrode for applying the radio frequency power, and a space portion arranged in the electrode unit, the space portion insulating the electrode and the processing container from each other. The space portion communicates with atmospheric air outside the processing container.
摘要翻译：这里公开了一种等离子体处理装置，其将处理气体引入到气密处理容器中，该气密处理容器施加射频功率以产生等离子体，并且将等离子体处理传送到布置在处理容器中的被处理物体。等离子体处理装置包括：布置在处理容器中的电极单元，具有用于施加射频电力的电极的电极单元和布置在电极单元中的空间部分，每个电极单元绝缘电极和处理容器的空间部分其他。空间部分与处理容器外部的大气连通。

24. 发明申请

US20060118044A1 Capacitive coupling plasma processing apparatus 有权
标题翻译：电容耦合等离子体处理装置
公开(公告)号：US20060118044A1
公开(公告)日：2006-06-08
申请号：US11292353
申请日：2005-12-02
申请人： Shinji Himori , Noriaki Imai , Katsumi Horiguchi , Takaaki Nezu , Shoichiro Matsuyama , Hiroki Matsumaru , Toshihiro Hayami , Kazuya Nagaseki , Itsuko Sakai , Tokuhisa Ohiwa , Yoshikazu Sugiyasu
发明人： Shinji Himori , Noriaki Imai , Katsumi Horiguchi , Takaaki Nezu , Shoichiro Matsuyama , Hiroki Matsumaru , Toshihiro Hayami , Kazuya Nagaseki , Itsuko Sakai , Tokuhisa Ohiwa , Yoshikazu Sugiyasu
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32697 , H01J37/32082
摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.
摘要翻译：电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。在腔室中，第一电极和第二电极相对设置。设置RF电源以向第一或第二电极提供RF功率，以在第一和第二电极之间的等离子体产生区域内形成RF电场，以将处理气体转化为等离子体。目标基板由第一和第二电极之间的支撑构件支撑，使得其工艺目标表面面向第二电极。导电功能表面设置在等离子体产生区域周围的周围区域中，并且被接地以与DC等离子体耦合以扩展等离子体。

25. 发明申请

US20050039854A1 Plasma etching method and plasma etching unit 审中-公开
标题翻译：等离子体蚀刻方法和等离子体蚀刻单元
公开(公告)号：US20050039854A1
公开(公告)日：2005-02-24
申请号：US10959585
申请日：2004-10-07
申请人： Shoichiro Matsuyama , Masanobu Honda , Kazuya Nagaseki , Hisataka Hayashi
发明人： Shoichiro Matsuyama , Masanobu Honda , Kazuya Nagaseki , Hisataka Hayashi
IPC分类号： H01L21/3065 , C23F1/00
CPC分类号： H01J37/32082 , H01J37/3266 , H01L21/3065
摘要： The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having a silicon film and an inorganic-material film adjacent to the silicon film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the silicon film of the substrate by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.
摘要翻译：本发明是一种等离子体蚀刻方法，包括：将一对电极相对设置在室中并使其中一个电极以使基板布置在电极之间的方式支撑待加工基板的布置步骤，基板具有与硅膜相邻的硅膜和无机材料膜; 以及蚀刻步骤，向所述电极中的至少一个施加高频电力，以在所述一对电极之间形成高频电场，将处理气体供应到所述室中以形成所述处理气体的等离子体，以通过电场的方法，通过等离子体选择性地等离子体蚀刻衬底的硅膜; 其中在所述蚀刻步骤中施加到所述至少一个所述电极的所述高频电力的频率为50〜150MHz。

26. 发明授权

US06544380B2 Plasma treatment method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US06544380B2
公开(公告)日：2003-04-08
申请号：US10079600
申请日：2002-02-19
申请人： Masayuki Tomoyasu , Akira Koshiishi , Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Yukio Naito , Kazuya Nagaseki , Keizo Hirose , Mitsuaki Komino , Hiroto Takenaka , Hiroshi Nishikawa , Yoshio Sakamoto
发明人： Masayuki Tomoyasu , Akira Koshiishi , Kosuke Imafuku , Shosuke Endo , Kazuhiro Tahara , Yukio Naito , Kazuya Nagaseki , Keizo Hirose , Mitsuaki Komino , Hiroto Takenaka , Hiroshi Nishikawa , Yoshio Sakamoto
IPC分类号： H05H100
CPC分类号： C23C16/45565 , C23C16/4405 , C23C16/4407 , C23C16/4483 , C23C16/4485 , C23C16/4557 , C23C16/5096 , C23C16/517 , H01J37/32082 , H01J37/32146 , H01J37/32155 , H01J37/32165 , H01J37/3244 , H01J37/32935 , H01J37/32963 , Y10S156/916
摘要： An apparatus for treating a substrate which includes a chamber and an opening formed in the chamber allowing the substrate to be conveyed into the chamber or taken out thereof. The chamber, also, includes a detachable baffle plate that fits around an electrode. For treatment to commence, the substrate is placed on the electrode and the chamber is exhausted of or supplied with gases. The electrode is then vertically lifted together with the baffle plate and the baffle plate is moved either to a position that is higher in level than an upper end of the opening of the chamber or to a position that is lower in level than a lower end of the opening of the chamber. This allows the baffle plate to shield a region near the opening of the chamber from a treatment region and allows reaction products to be adhered to the baffle plate.
摘要翻译：一种用于处理基板的设备，其包括室和形成在所述室中的开口，使得所述基板被输送到所述室中或从其中取出。该腔室还包括一个可拆卸的挡板，其围绕电极配合。为了开始处理，将基板放置在电极上，并且室被排出或供应气体。然后将电极与挡板一起垂直提升，并且挡板移动到比室的开口的上端更高的位置，或者移动到比下端更低的位置房间的开放。这允许挡板将腔室开口附近的区域与处理区域隔离，并允许反应产物粘附到挡板。

27. 发明授权

US5514425A Method of forming a thin film 失效
标题翻译：形成薄膜的方法
公开(公告)号：US5514425A
公开(公告)日：1996-05-07
申请号：US392737
申请日：1995-03-06
申请人： Hitoshi Ito , Kyoichi Suguro , Nobuo Hayasaka , Haruo Okano , Shinji Himori , Kazuya Nagaseki , Syuji Mochizuki
发明人： Hitoshi Ito , Kyoichi Suguro , Nobuo Hayasaka , Haruo Okano , Shinji Himori , Kazuya Nagaseki , Syuji Mochizuki
IPC分类号： H01L21/205 , C23C16/04 , C23C16/34 , H01L21/302 , H01L21/3065 , H01L21/768 , C23C14/02
CPC分类号： H01L21/76865 , C23C16/045 , C23C16/34 , H01L21/76843 , H01L21/76877
摘要： A thin film-forming method according to the present invention is characterized by comprising the steps of introducing TiCl.sub.4, hydrogen, nitrogen and NF.sub.3 into a film-forming chamber containing a semiconductor substrate (1) having a groove made in its surface, after the chamber has been evacuated to 10.sup.-4 Torr or less; and converting these gases into plasma, thereby forming a thin TiN film on only that portion of the groove which is other than the wall surfaces of the groove.
摘要翻译： PCT No.PCT / JP94 / 01089 Sec。 371日期：1995年3月6日 102（e）1995年3月6日PCT PCT 1994年7月5日PCT公布。第WO95 / 02076号公报日本1990年1月19日。根据本发明的薄膜形成方法的特征在于包括以下步骤：将TiCl 4，氢，氮和NF 3引入包含具有凹槽的半导体衬底（1）的成膜室在其表面上，在室被抽真空至10-4乇或更小之后; 并将这些气体转化为等离子体，从而在凹槽的除了凹槽的壁表面之外的部分上形成薄的TiN膜。

28. 发明授权

US08941037B2 Substrate processing apparatus, focus ring heating method, and substrate processing method 有权
标题翻译：基板加工装置，聚焦环加热方法和基板处理方法
公开(公告)号：US08941037B2
公开(公告)日：2015-01-27
申请号：US11950773
申请日：2007-12-05
申请人： Daisuke Hayashi , Kazuya Nagaseki
发明人： Daisuke Hayashi , Kazuya Nagaseki
IPC分类号： H05B6/10 , H05B6/36 , H01L21/687 , H01J37/32 , H01L21/67 , H01L21/683
CPC分类号： H01L21/68735 , H01J37/32522 , H01J37/32642 , H01J37/32706 , H01L21/67103 , H01L21/67109 , H01L21/6831 , H05B6/105
摘要： A substrate processing apparatus that can accurately control the temperature of a focus ring without causing abnormal electric discharge and the back-flow of radio frequency electrical power during the application of radio frequency electrical power. A wafer is mounted on a mounting stage disposed in a housing chamber. An annular focus ring is mounted on the mounting stage in such a manner as to surround the peripheral portion of the mounted wafer. The pressure in the housing chamber is reduced, radio frequency electrical power is applied to the mounting stage, and the focus ring generates heat by itself.
摘要翻译：一种基板处理装置，其可以在施加射频电力的同时，不会引起异常放电和射频电力的反向流动而精确地控制聚焦环的温度。晶片安装在设置在容纳室中的安装台上。环形聚焦环以围绕安装晶片的周边部分的方式安装在安装台上。容纳室中的压力减小，射频电力施加到安装台，并且聚焦环自身产生热量。

29. 发明授权

US08821683B2 Substrate processing apparatus and method, and program and storage medium 有权
标题翻译：基板处理装置和方法以及程序和存储介质
公开(公告)号：US08821683B2
公开(公告)日：2014-09-02
申请号：US11410120
申请日：2006-04-25
申请人： Yusuke Hirayama , Kazuya Nagaseki
发明人： Yusuke Hirayama , Kazuya Nagaseki
IPC分类号： H01L21/306 , C23C16/00 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/321 , H01J37/32623 , H01L21/3065
摘要： A substrate processing apparatus includes a plasma source facing a substrate, and a shielding member placed between the substrate and the plasma source. The plasma source diffuses a plasma radially and the shielding member has a through hole through which a part of the radially diffused plasma passes. A substrate processing method is used for performing a plasma processing on a substrate in a substrate processing apparatus including a plasma source facing the substrate and a shielding member placed between the plasma source and the substrate. The shielding member has a through hole. The method includes the step of diffusing a plasma radially by the plasma source.
摘要翻译：基板处理装置包括面向基板的等离子体源和设置在基板和等离子体源之间的屏蔽部件。等离子体源径向漫射等离子体，屏蔽构件具有通孔，通过该通孔使一部分径向扩散的等离子体通过。使用基板处理方法在基板处理装置中对基板进行等离子体处理，所述基板处理装置包括面向基板的等离子体源和设置在等离子体源与基板之间的屏蔽部件。屏蔽构件具有通孔。该方法包括通过等离子体源径向漫射等离子体的步骤。

30. 发明申请

US20110232846A1 MAGNETIC FIELD GENERATOR FOR MAGNETRON PLASMA 审中-公开
标题翻译： MAGNETRON等离子体磁场发生器
公开(公告)号：US20110232846A1
公开(公告)日：2011-09-29
申请号：US13154016
申请日：2011-06-06
申请人： Koji MIYATA , Kazuyuki TEZUKA , Koichi TATESHITA , Hiroo ONO , Kazuya NAGASEKI , Shinji HIMORI
发明人： Koji MIYATA , Kazuyuki TEZUKA , Koichi TATESHITA , Hiroo ONO , Kazuya NAGASEKI , Shinji HIMORI
IPC分类号： H01L21/3065 , C23C16/511
CPC分类号： H01L21/31116 , H01J37/32623 , H01J37/3266 , H01J37/32688 , H01L21/31138 , H01L21/32137 , H01L21/67069
摘要： Disclosed is a magnetic field generator for magnetron plasma. The magnetic field generator is provided with a plurality of magnetic segments, and generates a predetermined multi-pole magnetic field around the periphery of a workpiece substrate within a process chamber. The strength of the multi-pole magnetic field is controlled so that the state of the multi-pole magnetic field is matched different plasma processes. Further, the pattern of the multi-pole magnetic field can be changed so as to match different sizes of the substrate.
摘要翻译：公开了一种用于磁控管等离子体的磁场发生器。磁场发生器设置有多个磁段，并且在处理室内的工件衬底的周边周围产生预定的多极磁场。控制多极磁场的强度，使得多极磁场的状态与不同的等离子体处理相匹配。此外，可以改变多极磁场的图案，以便匹配基板的不同尺寸。

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