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11. 发明授权

US5171710A Method for photo annealing non-single crystalline semiconductor films 失效
标题翻译：非单晶半导体膜的退火方法
公开(公告)号：US5171710A
公开(公告)日：1992-12-15
申请号：US520998
申请日：1990-05-09
申请人： Shunpei Yamazaki , Kunio Suzuki , Susumu Nagayama , Takashi Inujima , Masayoshi Abe , Takeshi Fukada , Mikio Kinka , Ippei Kobayashi , Katsuhiko Shibata , Masato Susukida , Kaoru Koyanagi
发明人： Shunpei Yamazaki , Kunio Suzuki , Susumu Nagayama , Takashi Inujima , Masayoshi Abe , Takeshi Fukada , Mikio Kinka , Ippei Kobayashi , Katsuhiko Shibata , Masato Susukida , Kaoru Koyanagi
IPC分类号： H01L21/30 , H01L31/20
CPC分类号： H01L21/3003 , H01L31/208 , Y02E10/50 , Y02P70/521 , Y10S148/003 , Y10S148/004 , Y10S148/061 , Y10S148/09 , Y10S148/093
摘要： An improved semiconductor processing is disclosed. In the manufacturing process, a semiconductor layer is formed and then undergoes photo annealing. A neutralizer is then introduced to the photoannealed semiconductor. The semiconductor thus formed demonstrates the SEL effect instead of the Staebler-Wronski effect.
摘要翻译：公开了一种改进的半导体处理。在制造过程中，形成半导体层，然后进行光退火。然后将中和剂引入到光电导半导体中。这样形成的半导体表现出SEL效应而不是Staebler-Wronski效应。

12. 发明授权

US5145808A Method of crystallizing a semiconductor thin film 失效
标题翻译：使半导体薄膜结晶的方法
公开(公告)号：US5145808A
公开(公告)日：1992-09-08
申请号：US747708
申请日：1991-08-20
申请人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Setsuo Usui
发明人： Toshiyuki Sameshima , Masaki Hara , Naoki Sano , Setsuo Usui
IPC分类号： H01L21/20 , H01L21/268
CPC分类号： H01L21/2026 , Y10S117/904 , Y10S148/093 , Y10S148/134
摘要： A method of crystallizing a semiconductor thin film moves a laser beam emitted by a pulse laser in a first direction to irradiate the semiconductor tin film with the laser beam for scanning. The laser beam is split into a plurality of secondary laser beams of a width smaller than the pitch of step feed, respectively having different energy densities forming a stepped energy density distribution decreasing from the middle toward the opposite ends thereof with respect to the direction of step feed. The energy density of the first secondary laser beam corresponding to the middle of the energy distribution is higher than a threshold energy density, i.e., the minimum energy density that will melt the semiconductor thin film to make the same amorphous, and lower than a roughening energy density, i.e., the minimum energy density that will roughen the surface of the semiconductor thin film, the energy density of each of the secondary laser beams on the front side of the first secondary laser beam with respect to the direction of step feed is lower than a melting energy density, i.e., the minimum energy density of each of the secondary laser beams on the back side of the first secondary laser beam with respect to the direction of step feed is higher than the melting energy density and lower than and nearly equal to the threshold energy density.
摘要翻译：使半导体薄膜结晶的方法使由脉冲激光器发射的激光沿第一方向移动，以用激光束照射半导体锡膜进行扫描。激光束被分成多个宽度小于阶梯进给节距的次级激光束，分别具有不同的能量密度，形成阶梯能量密度分布，相对于台阶方向从中间向相对端减小饲料。对应于能量分布中间的第一次级激光束的能量密度高于阈值能量密度，即将熔化半导体薄膜以使其成为相同无定形且低于粗糙能量的最小能量密度密度，即将使粗糙化半导体薄膜的表面的最小能量密度，相对于步进进给方向，第一次级激光束正面上的每个次级激光束的能量密度低于熔融能量密度，即第一次级激光束的背侧上的每个次级激光束相对于步进进给方向的最小能量密度高于熔融能量密度，并且低于并且几乎等于阈值能量密度。

13. 发明授权

US5094977A Stress reduction in metal films by laser annealing 失效
标题翻译：通过激光退火对金属膜进行应力减小
公开(公告)号：US5094977A
公开(公告)日：1992-03-10
申请号：US645865
申请日：1991-01-25
申请人： Chang Yu , Trung T. Doan , Gurtej S. Sandhu
发明人： Chang Yu , Trung T. Doan , Gurtej S. Sandhu
IPC分类号： H01L21/285 , H01L21/321
CPC分类号： H01L21/321 , H01L21/28518 , Y10S148/09 , Y10S148/093
摘要： A method of processing a semiconductor wafer comprises, a) chemical vapor depositing (CVD) a metal layer atop a semiconductor substrate; and b) impinging laser energy upon the CVD metal layer at an optical fluence of from 0.05 Joules/cm.sup.2 to 0.30 Joules/cm.sup.2 for a period of time sufficient to relieve mechanical stress associated with the CVD metal layer yet insufficient to melt the CVD metal layer. In accordance with another aspect of the invention, such treatment method could also be used to form a desired silicide layer in the same step.
摘要翻译：一种处理半导体晶片的方法包括：a）化学气相沉积（CVD）在半导体衬底顶上的金属层; 和b）以0.05焦耳/厘米2至0.30焦耳/平方厘米的光能密度将激光能量照射在CVD金属层上足以缓解与CVD金属层相关的机械应力但不足以熔化CVD金属层的时间。根据本发明的另一方面，这种处理方法也可用于在同一步骤中形成所需的硅化物层。

14. 发明授权

US5082791A Method of fabricating solar cells 失效
标题翻译：制造太阳能电池的方法
公开(公告)号：US5082791A
公开(公告)日：1992-01-21
申请号：US395904
申请日：1989-08-18
申请人： Ronald H. Micheels , Percy Valdivia , Jack I. Hanoka
发明人： Ronald H. Micheels , Percy Valdivia , Jack I. Hanoka
IPC分类号： H01L21/268 , H01L31/068 , H01L31/18
CPC分类号： H01L21/268 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S148/092 , Y10S148/093 , Y10S148/153 , Y10S438/94
摘要： A solar cell fabrication procedure is described in which an excimer laser is used to cut a trench in a flat solar cell substrate so as to electrically isolate front and back regions of the substrate. The trench is cut around the perimeter of the cell. The advantage of using an excimer laser is that it will ablate a trench without diffusing conductive material deeper into the cell.
摘要翻译：描述了一种太阳能电池制造方法，其中使用准分子激光器来切割扁平太阳能电池基板中的沟槽，以便电隔离基板的前部区域和后部区域。沟槽围绕电池的周边切割。使用准分子激光器的优点在于，它可以消除沟槽而不会使导电材料扩散到电池中。

15. 发明授权

US4895812A Method of making ohmic contact to ferroelectric semiconductors 失效
标题翻译：与铁电半导体欧姆接触的方法
公开(公告)号：US4895812A
公开(公告)日：1990-01-23
申请号：US284037
申请日：1988-12-14
申请人： Da Y. Wang , Daniel T. Kennedy , Burton W. MacAllister, Jr.
发明人： Da Y. Wang , Daniel T. Kennedy , Burton W. MacAllister, Jr.
IPC分类号： H01L41/22
CPC分类号： H01L41/29 , Y10S148/093 , Y10S148/094
摘要： A layer of chemically compatible conductive material is applied to ferroelectric semiconductor material having a permanent polarization below its Curie temperature. The materials are heated to a temperature above the Curie temperature of the ferroelectric semiconductor material and allowed to cool. The result is a low resistance contact. The ferroelectric semiconductive material may be a layer on a non ferroelectric semiconductor material with a matching work function or matching dopant levels.
摘要翻译：将一层化学相容的导电材料施加到具有低于其居里温度的永久极化的铁电半导体材料。将材料加热到高于铁电半导体材料的居里温度并允许冷却的温度。结果是低电阻接触。铁电半导体材料可以是具有匹配功函数或匹配掺杂剂水平的非铁电半导体材料上的层。

16. 发明授权

US4843030A Semiconductor processing by a combination of photolytic, pyrolytic and catalytic processes 失效
标题翻译：通过光解，热解和催化过程的组合进行半导体加工
公开(公告)号：US4843030A
公开(公告)日：1989-06-27
申请号：US126891
申请日：1987-11-30
申请人： J. Gary Eden , Kevin K. King , Viken Tavitian
发明人： J. Gary Eden , Kevin K. King , Viken Tavitian
IPC分类号： C23C16/02 , C23C16/48 , C30B25/10 , H01L21/205
CPC分类号： H01L21/0242 , C23C16/0272 , C23C16/483 , C30B25/105 , C30B29/08 , H01L21/02395 , H01L21/02532 , H01L21/0262 , Y10S117/904 , Y10S148/048 , Y10S148/058 , Y10S148/071 , Y10S148/093 , Y10S438/903
摘要： A semiconductor processing method is provided for growing a semiconductor film from a semiconductorbearing gas on a substrate at a substrate temperature below the pyrolytic threshold of the gas. The gas is photodissociated to a collisionally stable species which migrates and travels in the gas phase the entire distance to the substrate, surving hundreds of collisions, and is pyrolyzed at the surface of the substrate and forms several monolayers of semiconductor material which is substantially more catalytically active than the substrate and which subsequently catalyzes decomposition of the gas.
摘要翻译：提供一种半导体处理方法，用于在低于气体的热解阈值的衬底温度下从半导体衬底上的半导体衬底生长半导体膜。气体被光分解成碰撞稳定的物质，其在气相中迁移并移动到基底的整个距离，传播数百次碰撞，并在基底表面热解并形成几个基本上更具催化性的单层半导体材料比底物活性高，随后催化气体分解。

17. 发明授权

US4835704A Adaptive lithography system to provide high density interconnect 失效
标题翻译：自适应光刻系统提供高密度互连
公开(公告)号：US4835704A
公开(公告)日：1989-05-30
申请号：US947461
申请日：1986-12-29
申请人： Charles W. Eichelberger , Robert J. Wojnarowski , Kenneth B. Welles, II
发明人： Charles W. Eichelberger , Robert J. Wojnarowski , Kenneth B. Welles, II
IPC分类号： G03F1/00 , G03F1/08 , G03F7/20 , H01L21/00 , H01L21/027 , H01L21/30 , H01L21/3213 , H01L21/60 , H01L21/768 , H01L21/82 , H01L23/538 , H05K3/00
CPC分类号： H01L24/25 , G03F7/704 , H01L21/6715 , H01L21/768 , H01L23/5389 , H01L24/24 , H01L24/75 , H01L24/76 , H01L2224/18 , H01L2224/75 , H01L2224/75753 , H01L2224/758 , H01L2224/759 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01074 , H01L2924/01075 , H01L2924/01082 , H01L2924/12042 , H01L2924/12043 , H01L2924/14 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , Y10S148/093 , Y10S430/146
摘要： An adaptive method and system are disclosed for providing high density interconnections of very large scale integrated circuits on a substrate. The procedure is performed in four basic steps: first an artwork representation for the interconnections of the integrated circuits is generated. This artwork representation is stored in a computer data base and assumes the integrated circuits to be at predetermined ideal locations and positions on the substrate. Second, using imaging, the actual positions of each integrated circuit on the substrate are determined. The actual positions of the integrated circuits are compared with their ideal positions to compute an offset and rotation for each integrated circuit on the substrate. Third, the computed offsets and rotations are then used to modify the artwork representation stored in the data base to account for the actual locations and positions of the integrated circuits on the substrate. Finally, the modified artwork representation is used to drive a direct writing laser lithography system that actually forms the high density interconnections of the integrated circuits on the substrate. The artwork representations are stored in computer data bases in vector form to minimize storage requirements. The laser beam produced by the lithography system is raster scanned on the substrate. Modulation of the laser beam is controlled by the real time conversion of the vector representation of the modified artwork to be a bit mapped representation. To assure accurate formations of the interconnects, a feedback alignment system is used to accurately position the laser beam throughout its raster scan.

18. 发明授权

US4822751A Method of producing a thin film semiconductor device 失效
标题翻译：薄膜半导体器件的制造方法
公开(公告)号：US4822751A
公开(公告)日：1989-04-18
申请号：US30904
申请日：1987-03-31
申请人： Akira Ishizu , Tadashi Nishimura , Yasuo Inoue
发明人： Akira Ishizu , Tadashi Nishimura , Yasuo Inoue
IPC分类号： H01L27/12 , H01L21/20 , H01L21/205 , H01L21/263 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/78 , H01L29/786 , H01L21/268
CPC分类号： H01L21/0262 , H01L21/0242 , H01L21/02491 , H01L21/02532 , H01L21/02639 , H01L27/1214 , H01L29/66757 , H01L29/78633 , Y10S148/091 , Y10S148/093
摘要： A thin film semiconductor device is formed by preparing a substrate, forming a pattern of metal thin film on the substrate, forming an insulating layer on the metal thin film, and forming a pattern of a semiconductor thin film active layer, which is self-aligned to the pattern of the metal thin film, by laser CVD.
摘要翻译：通过准备基板来形成薄膜半导体器件，在基板上形成金属薄膜图案，在金属薄膜上形成绝缘层，并形成自对准的半导体薄膜有源层的图案通过激光CVD到金属薄膜的图案。

19. 发明授权

US4764485A Method for producing via holes in polymer dielectrics 失效
标题翻译：在聚合物电介质中制造通孔的方法
公开(公告)号：US4764485A
公开(公告)日：1988-08-16
申请号：US617
申请日：1987-01-05
申请人： James A. Loughran , James G. McMullen , Alexander J. Yerman
发明人： James A. Loughran , James G. McMullen , Alexander J. Yerman
IPC分类号： B23K26/00 , B26F1/31 , B29C59/14 , H01L21/311 , H01L23/538 , H05K3/00 , C23F1/02 , B44C1/22
CPC分类号： H05K3/0041 , B23K26/0006 , B23K26/362 , B26F1/31 , B29C59/14 , H01L21/31127 , H01L23/5389 , H05K3/0038 , B23K2201/34 , B23K2203/08 , B23K2203/12 , B23K2203/172 , B23K2203/26 , B23K2203/42 , B23K2203/50 , H01L2924/0002 , H05K2203/0554 , H05K2203/107 , H05K3/0055 , Y10S148/091 , Y10S148/092 , Y10S148/093 , Y10S148/094 , Y10S148/106 , Y10S438/94 , Y10S438/945
摘要： A method for producing a hole in a polymer film includes the steps of depositing a conductive layer onto the polymer film and irradiating a spot on the layer with a burst of focused laser energy at a level sufficient to form an opening in the film and, subsequently, plasma etching the film so as to form a hole of desired depth in the polymer film underlying the opening in the conductive layer. This method is particularly applicable to the formation of multichip intergrated circuit packages in which a plurality of chips formed in a semiconductor wafer are coated with a polymer film covering the chips and the substrates. The holes are provided for the purpose of interconnecting selected chip contact pads via a deposited conductive layer which overlies the film and fills the holes.
摘要翻译：在聚合物膜中制造孔的方法包括以下步骤：在聚合物膜上沉积导电层，并以聚焦激光能量的突发照射该层上的斑点，其水平足以在膜中形成开口，随后等离子体蚀刻膜，以在导电层中的开口下方的聚合物膜中形成所需深度的孔。该方法特别适用于多芯片集成电路封装的形成，其中形成在半导体晶片中的多个芯片涂覆有覆盖芯片和基板的聚合物膜。这些孔被提供用于通过覆盖在膜上并填充孔的沉积的导电层互连所选择的芯片接触焊盘。

20. 发明授权

US4755475A Method of manufacturing photovoltaic device 失效
标题翻译：制造光伏器件的方法
公开(公告)号：US4755475A
公开(公告)日：1988-07-05
申请号：US15691
申请日：1987-02-17
申请人： Seiichi Kiyama , Yasuaki Yamamoto , Hideki Imai , Yutaka Hirono
发明人： Seiichi Kiyama , Yasuaki Yamamoto , Hideki Imai , Yutaka Hirono
IPC分类号： H01L27/142 , H01L31/0224 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/046 , H01L31/0463 , Y02E10/50 , Y10S148/093 , Y10S148/153 , Y10S438/94
摘要： A method of manufacturing a photovoltaic device, in which a plurality of photoelectric conversion elements comprising a first electrode layer, a semiconductive layer and a second electrode layer are laminatedly arranged on an insulative surface of a substrate and said photoelectric conversion elements are electrically connected in series with each other, comprising a step of dividedly arranging the first electrode layer on the surface of the substrate, a step of coating the semiconductive layer on the surface of the substrate including the upper surface of the divided first electrode layer, a step of coating the second electrode layer on the semiconductive layer, and a step of dividing the semiconductive layer and/or the second electrode layer in order to define each element by irradiating energy-beams on the semiconductive layer and/or the second electrode layer. The formation of a low resistance layer in the semiconductive layer and a residual molten second electrode layer can be prevented by using energy-beams having an energy-distribution substantially uniform over the entire irradiated zone. In addition, short-circuits between the adjacent photoelectric conversion elements can be prevented.
摘要翻译：一种制造光电器件的方法，其中包括第一电极层，半导体层和第二电极层的多个光电转换元件被层叠地布置在基板的绝缘表面上，并且所述光电转换元件串联电连接彼此包括在基板的表面上分割配置第一电极层的步骤，在包含分割的第一电极层的上表面的基板的表面上涂布半导体层的工序，第二电极层，以及分隔半导电层和/或第二电极层以便通过在半导体层和/或第二电极层上照射能量束来限定每个元件的步骤。通过使用在整个照射区域上具有基本均匀的能量分布的能量束，可以防止在半导体层中形成低电阻层和剩余熔融的第二电极层。此外，可以防止相邻光电转换元件之间的短路。

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