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    • 18. 发明申请
    • Manufacturing method of thin-film magnetic head and thin-film magnetic head
    • 薄膜磁头和薄膜磁头的制造方法
    • US20060067010A1
    • 2006-03-30
    • US10971113
    • 2004-10-25
    • Takeo KagamiTakayasu KanayaNoriaki KasaharaKazuki Sato
    • Takeo KagamiTakayasu KanayaNoriaki KasaharaKazuki Sato
    • G11B5/33G11B5/127
    • G11B5/332Y10T29/49043Y10T29/49046Y10T29/49048Y10T29/49052
    • A manufacturing method of a thin-film magnetic head includes a step of depositing an MR multi-layered film on a lower electrode layer, a step of patterning the deposited MR multi-layered film to define a track width, a step of forming a layer containing at least first insulation layer at both track-width direction sides of the patterned MR multi-layered film, a step of depositing a first additional upper metal layer on the patterned MR multi-layered film and on the layer containing at least first insulation layer, a step of patterning the first additional upper metal layer and the MR multi-layered film to define a length in a direction perpendicular to the track-width direction so as to obtain an MR multi-layered structure, a step of forming a second insulation layer to surround the first additional upper metal layer and the MR multi-layered structure, a step of removing by etching the second insulation layer on the first additional upper metal layer formed on the MR multi-layered structure, a step of thereafter, forming a second additional upper metal layer on the first additional upper metal layer and on the second insulation layer, and a step of forming an upper electrode layer on the second additional upper metal layer.
    • 薄膜磁头的制造方法包括在下电极层上沉积MR多层膜的步骤,对沉积的MR多层膜进行图案化以限定磁道宽度的步骤,形成层的步骤 在图案化MR多层膜的两个轨道宽度方向侧上至少含有第一绝缘层,在图案化MR多层膜上沉积第一附加上金属层和在至少包含第一绝缘层的层上沉积步骤 图案化第一附加上金属层和MR多层膜以在垂直于轨道宽度方向的方向上限定长度以获得MR多层结构的步骤,形成第二绝缘体的步骤 层以围绕第一附加上金属层和MR多层结构,通过蚀刻在形成在MR多层结构上的第一附加上金属层上的第二绝缘层去除步骤 其次,在第一附加上金属层和第二绝缘层上形成第二另外的上金属层,以及在第二另外的上金属层上形成上电极层的步骤。