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1. 发明授权

US07170713B2 Heat sink for a magnetic recording head 有权
标题翻译：用于磁记录头的散热器
公开(公告)号：US07170713B2
公开(公告)日：2007-01-30
申请号：US10215230
申请日：2002-08-08
申请人： Savas Gider , Wenchein Hsiao , Vladimir Nikitin
发明人： Savas Gider , Wenchein Hsiao , Vladimir Nikitin
IPC分类号： G11B5/127
CPC分类号： G11B5/3136 , G11B5/012 , G11B5/105 , G11B5/3103 , G11B5/3106 , G11B5/3133 , G11B5/332 , G11B5/4886
摘要： An effective heat sink is provided for a magnetic recording head. The heat sink conducts heat away from the recording head thus limiting the range of temperatures to which the recording head is subjected. A heat sink on a recording head significantly reduces heat induced protrusion.
摘要翻译：为磁记录头提供有效的散热器。散热器将热量从记录头导出，从而限制了记录头经受的温度范围。记录头上的散热片显着减少了热引起的突起。

2. 发明授权

US07154696B2 Tunable fly height using magnetomechanical effect in a magnetic head 失效
标题翻译：在磁头中使用磁力机械效应的可调飞翔高度
公开(公告)号：US07154696B2
公开(公告)日：2006-12-26
申请号：US10777522
申请日：2004-02-11
申请人： Vladimir Nikitin , Savas Gider , Wen-chien Hsiao
发明人： Vladimir Nikitin , Savas Gider , Wen-chien Hsiao
IPC分类号： G11B5/60 , G11B21/21
CPC分类号： G11B5/3136 , G11B5/6005
摘要： A new structure for adjusting flying height using a magnetomechanical effect. A head includes a magnetomechanically active structure and a coil coupled to the magnetomechanically active structure, the magnetomechanically active structure responding to a magnetic field generated by the coil to expand and/or contract.
摘要翻译：使用磁力机械效应调整飞行高度的新结构。磁头包括磁机械有源结构和耦合到磁机械有源结构的线圈，响应于由线圈产生的用于扩展和/或收缩的磁场的磁机械有源结构。

3. 发明授权

US06873542B2 Antiferromagnetically coupled bi-layer sensor for magnetic random access memory 有权
标题翻译：用于磁随机存取存储器的反铁磁耦合双层传感器
公开(公告)号：US06873542B2
公开(公告)日：2005-03-29
申请号：US10263495
申请日：2002-10-03
申请人： Savas Gider , Vladimir Nikitin
发明人： Savas Gider , Vladimir Nikitin
IPC分类号： G11C11/16 , G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic tunnel junction (MTJ) memory array having a magnetically stable free layer that can be switched from one memory state to another with a minimum of energy input. The memory array includes a MTJ cell having an antiparallel coupled free layer. An electrically conductive word line passes through the free layer such that current passed through the electrically conductive word line induces a magnetic field that acts on antiparallel coupled layers of the free layer causing their magnetizations to rotate while remaining antiparallel to one another.
摘要翻译：具有磁性稳定的自由层的磁性隧道结（MTJ）存储器阵列，其能够以最小的能量输入从一个存储器状态切换到另一个存储器状态。存储器阵列包括具有反平行耦合自由层的MTJ单元。导电字线通过自由层，使得通过导电字线的电流引起作用于自由层的反平行耦合层的磁场，导致它们的磁化旋转同时保持反向平行。

4. 发明授权

US08331058B2 Method and apparatus for providing a write head with an improved pole tip to improve overwrite and/or adjacent track interference 失效
标题翻译：用于向写头提供改进的极尖以改善重写和/或相邻轨道干扰的方法和装置
公开(公告)号：US08331058B2
公开(公告)日：2012-12-11
申请号：US10857363
申请日：2004-05-28
申请人： Savas Gider , Wen-Chien David Hsiao , Quan-chiu Harry Lam , Terence Tin-Lok Lam , Edward Hin Pong Lee , Yansheng Luo , Vladimir Nikitin , Changqing Shi , Xiaoyu Sui
发明人： Savas Gider , Wen-Chien David Hsiao , Quan-chiu Harry Lam , Terence Tin-Lok Lam , Edward Hin Pong Lee , Yansheng Luo , Vladimir Nikitin , Changqing Shi , Xiaoyu Sui
IPC分类号： G11B5/127
CPC分类号： G11B5/3116
摘要： A method and apparatus for providing a write head with an improved pole tip to improve overwrite and/or adjacent track interference. A cross pole tip writer is provided with a shape that is designed to reduce the saturation on the pole tip and aid in the concentration of flux to the down track.
摘要翻译：一种用于向写头提供改进的极尖以改善覆盖和/或相邻轨道干扰的方法和装置。十字极尖端写入器具有被设计成减小极尖上的饱和度的形状，并且有助于向下轨道的通量的集中。

5. 发明申请

US20050264930A1 Method and apparatus for providing a write head with an improved pole tip to improve overwrite and/or adjacent track interference 失效
标题翻译：用于向写头提供改进的极尖以改善重写和/或相邻轨道干扰的方法和装置
公开(公告)号：US20050264930A1
公开(公告)日：2005-12-01
申请号：US10857363
申请日：2004-05-28
申请人： Savas Gider , Wen-Chien Hsiao , Quan-chiu Lam , Terence Lam , Edward Hin Lee , Yansheng Luo , Vladimir Nikitin , Changqing Shi , Xiaoyu Sui
发明人： Savas Gider , Wen-Chien Hsiao , Quan-chiu Lam , Terence Lam , Edward Hin Lee , Yansheng Luo , Vladimir Nikitin , Changqing Shi , Xiaoyu Sui
IPC分类号： G11B5/23 , G11B5/31
CPC分类号： G11B5/3116
摘要： A method and apparatus for providing a write head with an improved pole tip to improve overwrite and/or adjacent track interference. A cross pole tip writer is provided with a shape that is designed to reduce the saturation on the pole tip and aid in the concentration of flux to the down track.
摘要翻译：一种用于向写头提供改进的极尖以改善覆盖和/或相邻轨道干扰的方法和装置。十字极尖端写入器具有被设计成减小极尖上的饱和度的形状，并且有助于向下轨道的通量的集中。

6. 发明授权

US06791868B2 Ferromagnetic resonance switching for magnetic random access memory 有权
标题翻译：磁性随机存取存储器的铁磁共振切换
公开(公告)号：US06791868B2
公开(公告)日：2004-09-14
申请号：US10335671
申请日：2003-01-02
申请人： Savas Gider , Vladimir Nikitin
发明人： Savas Gider , Vladimir Nikitin
IPC分类号： G11C1100
CPC分类号： G11C11/16
摘要： A new method of performing the write operation on the MRAM bit cell with improved switching selectivity and lower write current requirements is achieved utilizing oscillating word write currents at frequency near the ferromagnetic resonance frequency of the free layer, combined with the shift in said frequency due to the magnetic field produced by the current in the bit line. Operation is implemented in a conventional magnetic random access memory having a plurality of magnetoresisitive cells formed by an intersection of a grid of word and bit lines, wherein an individual cell within the grid can be selected and switched from one magnetic state to another by the magnetic fields produced by the currents in the word and bit lines.
摘要翻译：利用具有改善的开关选择性和较低写入电流要求的MRAM位单元执行写入操作的新方法利用在自由层的铁磁共振频率附近的频率处的振荡字写入电流来实现，结合由于由位线中的电流产生的磁场。操作在具有由字和位线的交叉点的交叉形成的多个磁感应电池的常规磁随机存取存储器中实现，其中电网内的单个电池可以通过磁性被选择并从一个磁状态切换到另一个磁状态由字和位线中的电流产生的场。

7. 发明申请

US20050264912A1 Tunable fly height using magnetomechanical effect in a magnetic head 失效
标题翻译：在磁头中使用磁力机械效应的可调飞翔高度
公开(公告)号：US20050264912A1
公开(公告)日：2005-12-01
申请号：US10777522
申请日：2004-02-11
申请人： Vladimir Nikitin , Savas Gider , Wen-chien Hsiao
发明人： Vladimir Nikitin , Savas Gider , Wen-chien Hsiao
IPC分类号： G11B5/60 , G11B21/02
CPC分类号： G11B5/3136 , G11B5/6005
摘要： A new structure for adjusting flying height using a magnetomechanical effect. A head includes a magnetomechanically active structure and a coil coupled to the magnetomechanically active structure, the magnetomechanically active structure responding to a magnetic field generated by the coil to expand and/or contract.
摘要翻译：使用磁力机械效应调整飞行高度的新结构。磁头包括磁机械有源结构和耦合到磁机械有源结构的线圈，响应于由线圈产生的用于扩展和/或收缩的磁场的磁机械有源结构。

8. 发明授权

US08704319B2 Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories 有权
标题翻译：用于提供具有用于自旋转移转矩存储器中的插入层的磁性层的方法和系统
公开(公告)号：US08704319B2
公开(公告)日：2014-04-22
申请号：US13332328
申请日：2011-12-20
申请人： Xueti Tang , Vladimir Nikitin , Dmytro Apalkov , Kiseok Moon , Steven M. Watts
发明人： Xueti Tang , Vladimir Nikitin , Dmytro Apalkov , Kiseok Moon , Steven M. Watts
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675
摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, a free layer, and at least one damping reduction layer. The free layer has an intrinsic damping constant. The nonmagnetic spacer layer is between the pinned layer and the free layer. The at least one damping reduction layer is adjacent to at least a portion of the free layer and configured to reduce the intrinsic damping constant of the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：一种方法和系统提供可用于磁性装置的磁结。磁结包括钉扎层，非磁性间隔层，自由层和至少一个阻尼减小层。自由层具有固有阻尼常数。非磁性间隔层位于被钉扎层和自由层之间。所述至少一个阻尼减小层与所述自由层的至少一部分相邻并且被配置为减小所述自由层的固有阻尼常数。磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

9. 发明授权

US08698259B2 Method and system for providing a magnetic tunneling junction using thermally assisted switching 有权
标题翻译：使用热辅助切换提供磁隧道结的方法和系统
公开(公告)号：US08698259B2
公开(公告)日：2014-04-15
申请号：US13332282
申请日：2011-12-20
申请人： Mohamad Towfik Krounbi , Dmytro Apalkov , Xueti Tang , Vladimir Nikitin
发明人： Mohamad Towfik Krounbi , Dmytro Apalkov , Xueti Tang , Vladimir Nikitin
IPC分类号： H01L27/22
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3286 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： A magnetic junction is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The magnetic junction may also include an additional nonmagnetic spacer layer and an additional pinned layer opposing the nonmagnetic spacer layer and the pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is configured to be switchable using a write current passed through the magnetic junction. The free layer is also configured to be thermally stable in a quiescent state and have a reduced thermal stability due to heating from the write current being passed through the magnetic junction. In some aspects, the free layer includes at least one of a pinning layer(s) interleaved with ferromagnetic layer(s), two sets of interleaved ferromagnetic layers having different Curie temperatures, and a ferrimagnet having a saturation magnetization that increases with temperature between ferromagnetic layers.
摘要翻译：描述了磁连接。磁结包括钉扎层，非磁性间隔层和自由层。磁结还可以包括附加的非磁性间隔层和与非磁性间隔层和被钉扎层相对的附加钉扎层。非磁性间隔层位于被钉扎层和自由层之间。自由层被配置为可以使用通过磁结的写入电流来切换。自由层还被配置为在静止状态下是热稳定的，并且由于来自写入电流的加热通过磁结而具有降低的热稳定性。在一些方面，自由层包括与铁磁层交织的钉扎层，具有不同居里温度的两组交错铁磁层和具有随着温度升高的饱和磁化强度的铁磁体中的至少一个铁磁材料层。

10. 发明申请

US20130155754A1 METHOD AND SYSTEM FOR PROVIDING A MAGNETIC MEMORY UTILIZING A SHIFT REGISTER 有权
标题翻译：提供使用移位寄存器的磁记录的方法和系统
公开(公告)号：US20130155754A1
公开(公告)日：2013-06-20
申请号：US13332230
申请日：2011-12-20
申请人： Dmytro Apalkov , Vladimir Nikitin , Alexey Vasilyevitch Khvalkovskiy
发明人： Dmytro Apalkov , Vladimir Nikitin , Alexey Vasilyevitch Khvalkovskiy
IPC分类号： G11C19/02
CPC分类号： G11C19/0841 , G11C11/161 , G11C11/1675
摘要： A magnetic memory is described. The magnetic memory includes magnetic memory elements corresponding to magnetic memory cells and at least one shift register. Each magnetic memory element includes a pinned layer, a free layer, and a nonmagnetic spacer layer between the pinned and free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic memory element. The shift register(s) correspond to the magnetic memory elements. Each shift register includes domains separated by domain walls. A domain is antiparallel to an adjoining domain. The shift register(s) are configured such that an equilibrium state aligns a portion of the domains with the magnetic memory elements. The shift register(s) are also configured such that each domain walls shifts to a location of an adjoining domain wall when a shift current is passed through the shift register(s) in a direction along adjoining domains.
摘要翻译：描述磁存储器。磁存储器包括对应于磁存储器单元和至少一个移位寄存器的磁存储元件。每个磁存储元件包括被钉扎层，自由层和在钉扎层和自由层之间的非磁性间隔层。当写入电流通过磁存储元件时，自由层可在稳定磁状态之间切换。移位寄存器对应于磁存储元件。每个移位寄存器包括由畴壁分隔的域。一个域与相邻域反向并行。移位寄存器被配置为使得平衡状态将磁畴的一部分与磁存储元件对准。移位寄存器还被配置为使得当移位电流沿着相邻域的方向通过移位寄存器时，每个畴壁移动到邻接畴壁的位置。

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