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1. 发明授权

US6144534A Laminated hard magnet in MR sensor 失效
公开(公告)号：US6144534A
公开(公告)日：2000-11-07
申请号：US536
申请日：1997-12-30
申请人： Song Sheng Xue , James F. Dolejsi , Patrick J. Ryan
发明人： Song Sheng Xue , James F. Dolejsi , Patrick J. Ryan
IPC分类号： G01R33/09 , G11B5/39
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932
摘要： A magneto-resistive sensor has a magneto-resistive element with an active area with an electrical resistance sensitive to changes in magnetic flux. Two hard magnets on opposing sides of the magneto-resistive element magnetically bias the magneto-resistive element. Each hard magnet includes a seed layer of a soft magnetic, electrically conductive material between two magnet layers of a hard magnetic, electrically conductive material laminated longitudinally together such that the seed layer and the magnet layers exhibit unified magnetic properties. The seed layer is preferably an amorphous material such as nitrided sendust. The laminated structure allows for a thicker magnet structure with low electrical resistance but without degradation of magnetic properties due to the increased thickness.

2. 发明授权

US5495378A Magnetoresistive sensor with improved performance and processability 失效
标题翻译：在有源区域中具有软相邻层的永磁体稳定磁阻传感器
公开(公告)号：US5495378A
公开(公告)日：1996-02-27
申请号：US380820
申请日：1995-01-30
申请人： Peter I. Bonyhard , James F. Dolejsi , Charles H. Tolman , William P. Wood
发明人： Peter I. Bonyhard , James F. Dolejsi , Charles H. Tolman , William P. Wood
IPC分类号： G11B5/31 , G11B5/39 , G11B5/40
CPC分类号： G11B5/399 , G11B5/3903 , G11B5/3967 , G11B5/313 , G11B5/40
摘要： An MR sensor having improved current density distribution, reduced overall resistance and a substantially planar surface is disclosed. The MR sensor includes an MR layer having first and second outer regions and an active region located between the first and second outer regions. A first permanent magnet region is formed upon the first MR layer outer region and defines a first boundary of the MR layer active region. A second permanent magnet region is formed upon the second MR layer outer region and defines a second boundary of the MR layer active region so that a gap region is positioned at least partially between the first and second permanent magnet regions. A spacer layer is formed on the MR layer active region between the first and second permanent magnet regions. A soft adjacent layer is formed in the active region and upon the spacer layer, and, in some preferred embodiments, also at least partially upon the permanent magnet region.
摘要翻译：公开了具有改善的电流密度分布，降低的总体电阻和基本平坦的表面的MR传感器。 MR传感器包括具有第一和第二外部区域以及位于第一和第二外部区域之间的有源区域的MR层。第一永磁体区域形成在第一MR层外部区域上并且限定MR层有源区域的第一边界。第二永久磁铁区域形成在第二MR层外部区域上并且限定MR层有源区域的第二边界，使得间隙区域至少部分地位于第一和第二永磁体区域之间。在第一和第二永磁体区域之间的MR层有源区上形成间隔层。在有源区和隔离层中形成软相邻层，并且在一些优选实施例中还至少部分地形成在永磁体区域上。

3. 发明授权

US5554265A Method of making a magnetoresistive sensor 失效
标题翻译：制造磁阻传感器的方法
公开(公告)号：US5554265A
公开(公告)日：1996-09-10
申请号：US421543
申请日：1995-04-13
申请人： Peter I. Bonyhard , James F. Dolejsi , Charles H. Tolman , William P. Wood
发明人： Peter I. Bonyhard , James F. Dolejsi , Charles H. Tolman , William P. Wood
IPC分类号： G11B5/31 , G11B5/39 , G11B5/40 , C23C14/34 , B05D5/12 , G11B5/42
CPC分类号： G11B5/399 , G11B5/3903 , G11B5/3967 , G11B5/313 , G11B5/40
摘要： An MR sensor having improved current density distribution, reduced overall resistance and a substantially planar surface is disclosed. The MR sensor includes an MR layer having first and second outer regions and an active region located between the first and second outer regions. A first permanent magnet region is formed upon the first MR layer outer region and defines a first boundary of the MR layer active region. A second permanent magnet region is formed upon the second MR layer outer region and defines a second boundary of the MR layer active region so that a gap region is positioned at least partially between the first and second permanent magnet regions. A spacer layer is formed on the MR layer active region between the first and second permanent magnet regions. A soft adjacent layer is formed in the active region and upon the spacer layer, and, in some preferred embodiments, also at least partially upon the permanent magnet region.
摘要翻译：公开了具有改善的电流密度分布，降低的总体电阻和基本平坦的表面的MR传感器。 MR传感器包括具有第一和第二外部区域以及位于第一和第二外部区域之间的有源区域的MR层。第一永磁体区域形成在第一MR层外部区域上并且限定MR层有源区域的第一边界。第二永久磁铁区域形成在第二MR层外部区域上并且限定MR层有源区域的第二边界，使得间隙区域至少部分地位于第一和第二永磁体区域之间。在第一和第二永磁体区域之间的MR层有源区上形成间隔层。在有源区和隔离层中形成软相邻层，并且在一些优选实施例中还至少部分地形成在永磁体区域上。

4. 发明授权

US07082016B2 Multilayer magnetic shields with compensated thermal protrusion 失效
标题翻译：具有补偿热突起的多层磁屏蔽
公开(公告)号：US07082016B2
公开(公告)日：2006-07-25
申请号：US10375621
申请日：2003-02-27
申请人： Ladislav Rudolf Pust , Mark Thomas Kief , Ibro Tabakovic , James F. Dolejsi , Vee Sochivy Kong
发明人： Ladislav Rudolf Pust , Mark Thomas Kief , Ibro Tabakovic , James F. Dolejsi , Vee Sochivy Kong
IPC分类号： G11B5/11 , G11B5/33
CPC分类号： G11B5/3133 , G11B5/10 , G11B5/102 , G11B5/105 , G11B5/115 , G11B5/1871 , G11B5/3136 , G11B5/3146 , G11B5/332 , G11B5/3967 , G11B5/6011
摘要： A reader formed in a data transducer includes a first shield, a read gap, a second shield, a maanetic compensation layer, and a non-magnetic spacer layer. The first shield is formed of a multilayer comprised of a layer of a first material. The second shield is spaced apart from the first shield by the read gap. The magnetic compensation layer is formed in the first shield and has a coefficient of thermal expansion of less than the coefficient of thermal expansion of the first material. The non-magnetic spacer layer separates the first material layer and the compensation layer of the first shield.
摘要翻译：形成在数据换能器中的读取器包括第一屏蔽，读取间隙，第二屏蔽，马恩补偿层和非磁性间隔层。第一屏蔽由包括第一材料层的多层构成。第二屏蔽件与第一屏蔽件间隔开读出间隙。磁补偿层形成在第一屏蔽中，并且具有小于第一材料的热膨胀系数的热膨胀系数。非磁性间隔层分离第一屏蔽层的第一材料层和补偿层。

5. 发明授权

US06351357B1 Laminated hard magnet in MR sensor 失效
标题翻译： MR传感器中的层叠硬磁体
公开(公告)号：US06351357B1
公开(公告)日：2002-02-26
申请号：US09665782
申请日：2000-09-20
申请人： Song Sheng Xue , James F. Dolejsi , Patrick J. Ryan
发明人： Song Sheng Xue , James F. Dolejsi , Patrick J. Ryan
IPC分类号： G11B539
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932
摘要： A magneto-resistive sensor has a magneto-resistive element with an active area with an electrical resistance sensitive to changes in magnetic flux. Two hard magnets on opposing sides of the magneto-resistive element magnetically bias the magneto-resistive element. Each hard magnet includes a seed layer of a soft magnetic, electrically conductive material between two magnet layers of a hard magnetic, electrically conductive material laminated longitudinally together such that the seed layer and the magnet layers exhibit unified magnetic properties. The seed layer is preferably an amorphous material such as nitrided sendust. The laminated structure allows for a thicker magnet structure with low electrical resistance but without degradation of magnetic properties due to the increased thickness.
摘要翻译：磁阻传感器具有磁阻元件，其具有对磁通量变化敏感的电阻的有源区域。磁阻元件的相对侧上的两个硬磁体磁偏置磁阻元件。每个硬磁体包括在纵向一体层叠的硬磁导电材料的两个磁体层之间的软磁导电材料的种子层，使得晶种层和磁体层表现出统一的磁性。种子层优选为无定形材料，例如氮化硅铝石。层压结构允许具有低电阻的较厚的磁体结构，但由于增加的厚度而不降低磁性能。

6. 发明授权

US06235342B1 Method of fabricating a magnetoresistive read sensor 有权
标题翻译：制造磁阻读取传感器的方法
公开(公告)号：US06235342B1
公开(公告)日：2001-05-22
申请号：US09651238
申请日：2000-08-30
申请人： Song Sheng Xue , Patrick J. Ryan , James F. Dolejsi
发明人： Song Sheng Xue , Patrick J. Ryan , James F. Dolejsi
IPC分类号： B05D512
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3116 , G11B5/3163 , G11B5/3903 , G11B5/3932
摘要： An improved magnetoresistive read sensor (100) and a method of fabricating magnetoresistive read sensor (100) that eliminates film removal is disclosed. The magnetoresistive sensor (100) is formed by positioning a first mask (128) on a gap layer (104) split into three regions due to subsequent layers. A first mask (128) is positioned on the central region of the gap layer (104) and a first hard-biasing material (106) is deposited onto the outside regions of the gap layer (104). The first mask (128) is removed and a magnetoresistive element (116) is deposited onto the outside regions of the first hard-biasing material (106) and the central region of gap layer (104), thereby forming an active region (122), a first passive region (124) and a second passive region (126) of the magnetoresistive sensor (100). A spacer layer (118) is deposited onto the magnetoresistive element (116) in all three regions and a soft adjacent layer (120) is deposited onto the spacer layer (118) in all three regions. A second mask (134) is positioned over the active region (122) of the sensor and a second hard-biasing material (110) is deposited onto the soft adjacent layer (120) in the first passive region (124) and the second passive region (126). The second mask (134) is removed and contacts (112, 114) are positioned onto the second hard-biasing material (110).
摘要翻译：公开了改进的磁阻读取传感器（100）和制造消除膜去除的磁阻读取传感器（100）的方法。通过将第一掩模（128）定位在由于后续层分裂成三个区域的间隙层（104）上而形成磁阻传感器（100）。第一掩模（128）位于间隙层（104）的中心区域上，并且第一硬偏压材料（106）沉积在间隙层（104）的外部区域上。去除第一掩模（128）并且将磁阻元件（116）沉积到第一硬偏压材料（106）的外部区域和间隙层（104）的中心区域上，由此形成有源区域（122），磁阻传感器（100）的第一无源区（124）和第二无源区（126）。在所有三个区域中，隔离层（118）沉积到磁阻元件（116）上，并且在所有三个区域中将软相邻层（120）沉积到间隔层（118）上。第二掩模（134）被定位在传感器的有源区域（122）上方，并且第二硬偏压材料（110）沉积在第一无源区域（124）中的软相邻层（120）上，并且第二被动区域（126）。移除第二掩模（134）并将触头（112,114）定位在第二硬偏置材料（110）上。

7. 发明授权

US06229678B1 Magnetoresistive read sensor 失效
标题翻译：磁阻读取传感器
公开(公告)号：US06229678B1
公开(公告)日：2001-05-08
申请号：US09011631
申请日：1999-01-07
申请人： Song Sheng Xue , Patrick J. Ryan , James F. Dolejsi
发明人： Song Sheng Xue , Patrick J. Ryan , James F. Dolejsi
IPC分类号： G11B5139
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3116 , G11B5/3163 , G11B5/3903 , G11B5/3932
摘要： An improved magnetoresistive read sensor (100) and a method of fabricating magnetoresistive read sensor (100) that eliminates film removal is disclosed. The magnetoresistive sensor (100) is formed by positioning a first mask (128) on a gap layer (104) split into three regions due to subsequent layers. A first mask (128) is positioned on the central region of the gap layer (104) and a first hard-biasing material (106) is deposited onto the outside regions of the gap layer (104). The first mask (128) is removed and a magnetoresistive element (116) is deposited onto the outside regions of the first hard-biasing material (106) and the central region of gap layer (104), thereby forming an active region (122), a first passive region (124) and a second passive region (126) of the magnetoresistive sensor (100). A spacer layer (118) is deposited onto the magnetoresistive element (116) in all three regions and a soft adjacent layer (120) is deposited onto the spacer layer (118) in all three regions. A second mask (134) is positioned over the active region (122) of the sensor and a second hard-biasing material (110) is deposited onto the soft adjacent layer (120) in the first passive region (124) and the second passive region (126). The second mask (134) is removed and contacts (112, 114) are positioned onto the second hard- biasing material (110).
摘要翻译：公开了改进的磁阻读取传感器（100）和制造消除膜去除的磁阻读取传感器（100）的方法。通过将第一掩模（128）定位在由于后续层分裂成三个区域的间隙层（104）上而形成磁阻传感器（100）。第一掩模（128）位于间隙层（104）的中心区域上，并且第一硬偏压材料（106）沉积在间隙层（104）的外部区域上。去除第一掩模（128）并且将磁阻元件（116）沉积到第一硬偏压材料（106）的外部区域和间隙层（104）的中心区域上，由此形成有源区域（122），磁阻传感器（100）的第一无源区（124）和第二无源区（126）。在所有三个区域中，隔离层（118）沉积到磁阻元件（116）上，并且在所有三个区域中将软相邻层（120）沉积到间隔层（118）上。第二掩模（134）被定位在传感器的有源区域（122）上方，并且第二硬偏压材料（110）沉积在第一无源区域（124）中的软相邻层（120）上，并且第二被动区域（126）。移除第二掩模（134）并将触头（112,114）定位在第二硬质偏置材料（110）上。

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