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11. 发明授权

US4980015A Method for pulling single crystals 失效
标题翻译：单晶拉丝方法
公开(公告)号：US4980015A
公开(公告)日：1990-12-25
申请号：US360126
申请日：1989-06-01
申请人： Naoki Ono , Michio Kida , Yoshiaki Arai , Kensho Sahira
发明人： Naoki Ono , Michio Kida , Yoshiaki Arai , Kensho Sahira
IPC分类号： C30B15/04 , C30B15/12
CPC分类号： C30B15/04 , C30B15/12 , Y10T117/1052
摘要： In a method for pulling a single crystal, employing a double crucible assembly, the dopant concentration of the molten raw material in an inner crucible prior to the pulling, is raised to a value higher than the dopant concentration C of the molten raw material in the inner crucible at the steady state. Furthermore, at the initial stage of the pulling, the raw material having a dopant content ratio of no greater than kC is introduced into the outer crucible at a rate greater than the rate of decrease of the molten raw material within the inner crucible during the pulling, to achieve a concentration ratio of dopant between the inner and outer crucibles at a target value. Subsequently, the raw material having kC as the dopant content ratio is introduced into the outer crucible, at a rate equal to the rate of decrease of the molten raw material during the pulling.

12. 发明授权

US4935057A Cermet and process of producing same 失效
标题翻译：金属陶瓷及其生产工艺
公开(公告)号：US4935057A
公开(公告)日：1990-06-19
申请号：US405523
申请日：1989-09-11
申请人： Hironori Yoshimura , Niro Odani
发明人： Hironori Yoshimura , Niro Odani
IPC分类号： C22C29/04
CPC分类号： C22C29/04 , B22F2998/00
摘要： A cermet has a hard phase and a binder phase. The hard phase is formed by about 70% to about 95% by weight of elements including titanium, tantalum, tungsten, carbon and nitrogen. The elements have atomic ratios so as to satisfy the relationships of 0.05.ltoreq.b/(b+a).ltoreq.0.20, 0.04.ltoreq.c/(c+a).ltoreq.0.20 and 0.15.ltoreq.y/(x+y).ltoreq.0.60, where a, b, c, x and y denote atomic ratios of titanium, tantalum, tungsten, carbon and nitrogen, respectively. The binder phase is formed by about 5% to about 30% by weight of at least one metal of cobalt and nickel. Additionally, there is disclosed a process for producing such a cermet.

13. 发明授权

US4934881A Ball end mill 失效
标题翻译：球头铣刀
公开(公告)号：US4934881A
公开(公告)日：1990-06-19
申请号：US373513
申请日：1989-06-30
申请人： Osamu Tsujimura , Yuzo Koesashi , Masayuki Okawa
发明人： Osamu Tsujimura , Yuzo Koesashi , Masayuki Okawa
IPC分类号： B23C5/10
CPC分类号： B23C5/1018 , B23C2210/203 , Y10T407/1924 , Y10T407/1948 , Y10T407/26 , Y10T407/27
摘要： A ball end mill including an elongated body, a center insert, and a plurality of cutting inserts. The center insert and the cutting inserts are mounted on the forward end of the body. The center insert and each of the cutting inserts are adjacent to each other in such a manner that the center insert is located with a part thereof at the center. The center insert which is made of cemented carbide has cutting edges passing through the center axis. The cutting inserts are made of a super hard sintered compact. Each of the cutting inserts has a cutting edge aligned to the cutting edge of the center insert. The cutting edges of the cutting inserts and the center insert cooperate to draw a hemispherical path on rotation.
摘要翻译：一种球头立铣刀，包括细长主体，中心插入件和多个切削刀片。中心插入件和切削刀片安装在主体的前端。中心插入件和每个切削刀片彼此相邻，使得中心插入件的一部分位于中心。由硬质合金制成的中心刀片具有穿过中心轴线的切削刃。切削刀片由超硬烧结体制成。每个切削刀片具有与中心刀片的切削刃对准的切削刃。切削刀片和中心刀片的切削刃配合以在旋转时画出半球形路径。

14. 发明授权

US4898794A Hydrogen absorbing Ni,Zr-based alloy and rechargeable alkaline battery 失效
标题翻译：吸氢Ni，Zr基合金和可充电碱性电池
公开(公告)号：US4898794A
公开(公告)日：1990-02-06
申请号：US380608
申请日：1989-07-17
申请人： Hidekazu Doi , Ritsue Yabuki
发明人： Hidekazu Doi , Ritsue Yabuki
IPC分类号： C22C30/00 , H01M4/38
CPC分类号： C22C30/00 , H01M4/383 , Y10S420/90
摘要： A hydrogen absorbing Ni,Zr-based alloy comprising 5 to 20% by weight of titanium (Ti), 10 to 37% by weight of zirconium (Zr), 5 to 30% by weight of manganese (Mn), 0.01 to 15% by weight of tungsten (W), 6 to 30% by weight of iron (Fe), and optionally at least one of 0.1 to 7% by weight of Cu, 0.05 to 6% by weight of Cr and 0.01 to 5% by weight of Al, and balance nickel (Ni) and unavoidable impurities; and a sealed Ni-hydrogen rechargeable battery comprising a negative electrode provided with a hydrogen absorbing alloy as an active material, an Ni positive electrode, a separator and an alkaline electrolytic solution, wherein the hydrogen absorbing alloy is composed of such hydrogen absorbing Ni,Zr-based alloy.

15. 发明授权

US4861550A Corrosion-resistant nickel-base alloy having high resistance to stress corrosion cracking 失效
标题翻译：耐腐蚀的镍基合金具有很高的抗应力腐蚀开裂性能
公开(公告)号：US4861550A
公开(公告)日：1989-08-29
申请号：US135958
申请日：1988-03-14
申请人： Takeshi Yoshida , Yoshio Takizawa , Ichiro Sekine
发明人： Takeshi Yoshida , Yoshio Takizawa , Ichiro Sekine
IPC分类号： C22C19/03
CPC分类号： C22C19/03
摘要： The invention relates to a Ni-base alloy which contains Mo, Al and Fe, and further, as required, one or more of the following: a group consisting of one or more of V, W, Cr and Cu; one or both of B and Ca; and Co. The alloy of the invention has excellent resistance to stress corrosion cracking even after being subjected to thermal processing such as welding without need for solution treatment thereafter.
摘要翻译：本发明涉及一种含有Mo，Al和Fe的Ni基合金，进一步根据需要，可以使用以下一种或多种：由V，W，Cr和Cu中的一种或多种组成的组; B和Ca中的一种或两种; 本发明的合金即使在经受热处理如焊接之后也具有优异的耐应力腐蚀开裂性，因此此后不需要固溶处理。

16. 发明授权

US5468724A High temperature oxide superconductor 失效
标题翻译：高温氧化物超导体
公开(公告)号：US5468724A
公开(公告)日：1995-11-21
申请号：US68587
申请日：1993-05-27
申请人： Takahiro Wada , Shin-ichi Koriyama , Takeshi Sakurai , Nobuo Suzuki , Takayuki Miyatake , Hisao Yamauchi , Naoki Koshizuka , Shoji Tanaka
发明人： Takahiro Wada , Shin-ichi Koriyama , Takeshi Sakurai , Nobuo Suzuki , Takayuki Miyatake , Hisao Yamauchi , Naoki Koshizuka , Shoji Tanaka
IPC分类号： C01G3/00 , C04B35/45 , H01L39/12 , H01B12/00
CPC分类号： C01G3/006 , C04B35/4504 , H01L39/126 , C01P2002/72 , C01P2002/77 , C01P2002/88 , C01P2004/80 , C01P2006/14 , Y10S505/779 , Y10S505/78
摘要： Disclosed herein are high-temperature oxide superconductors of RBa.sub.2 Cu.sub.4 O.sub.8 type, with Ba partly replaced by Sr or Ca, or with R and Ba partly replaced by Ca and Sr, respectively, as represented by the chemical composition formula of R(Ba.sub.1-y Sr.sub.y).sub.2 Cu.sub.4 O.sub.8 or R(Ba.sub.1-z Ca.sub.z).sub.2 Cu.sub.4 O.sub.8 or (R.sub.1-x Ca.sub.x) (Ba.sub.1-y Sr.sub.y).sub.2 Cu.sub.4 O.sub.8. They exhibit superconductivity at high temperatures. Especially, the last one exhibits superconductivity at a higher temperature than the former two. All of them can be made with a less amount of Ba as a deleterious substance, and the first two have improved sinterability. The best results are obtained when they are produced by the process involving the hot hydrostatic pressure treatment of the mixture of raw materials at 850.degree.-1100.degree. C. in an atmosphere composed of an inert gas and oxygen. The process permits a wider selection of Ba raw materials.
摘要翻译：本文公开了RBa2Cu4O8型的高温氧化物超导体，其中Ba部分被Sr或Ca取代，或者R和Ba分别被Ca和Sr部分替代，如R（Ba1-ySry）2Cu4O8的化学组成式所示或R（Ba1-zCaz）2 Cu4O8或（R1-xCax）（Ba1-ySry）2Cu4O8。它们在高温下表现出超导性。特别地，最后一个在比前两个更高的温度下表现出超导性。所有这些都可以用少量的Ba作为有害物质，前两种具有改善的烧结性。通过在惰性气体和氧气组成的气氛中，在850〜-1100℃的原料混合物进行热静水压处理的方法制造时，得到最好的结果。该过程允许更广泛地选择Ba原料。

17. 发明授权

US5204059A Ni base alloy for spark plug electrodes of internal combustion engines 失效
标题翻译：用于内燃机火花塞电极的镍基合金
公开(公告)号：US5204059A
公开(公告)日：1993-04-20
申请号：US804486
申请日：1991-12-09
申请人： Kensho Sahira , Hideo Kitamura , Akira Mimura , Nobuyoshi Kurauchi
发明人： Kensho Sahira , Hideo Kitamura , Akira Mimura , Nobuyoshi Kurauchi
IPC分类号： C22C19/03 , C22C19/05 , H01T13/39
CPC分类号： H01T13/39 , C22C19/03 , C22C19/058
摘要： An Ni base alloy for use in spark plug electrodes for internal combustion engines which consists essentially of, on a weight percent basis,0.1 to 1.5% Si,0.1 to 0.65% Mn,3.1 to 5% Al,0 to 2% Cr,0 to 0.5% of one or more elements selected from the group consisting of Y and rare earth elements,0 to 5% Co,0 to 0.5% of Hf and/or Re, andthe remainder Ni and incidental impurities.
摘要翻译：一种用于内燃机的火花塞电极的Ni基合金，其基本上以重量百分比计，基于0.1至1.5％的Si，0.1至0.65％的Mn，3.1至5％的Al，0至2％的Cr，0 至0.5％的选自由Y和稀土元素组成的组中的一种或多种元素，0-5％Co，0-0.5％Hf和/或Re，余量为Ni和附带杂质。

18. 发明授权

US5096768A Substrate used for fabrication of thick film circuit 失效
标题翻译：用于制造厚膜电路的基板
公开(公告)号：US5096768A
公开(公告)日：1992-03-17
申请号：US474904
申请日：1990-02-05
申请人： Yoshirou Kuromitsu , Hideaki Yoshida , Toshiyuki Nagase , Hiroto Uchida , Tadaharu Tanaka , Yoshio Kanda , Kenji Morinaga
发明人： Yoshirou Kuromitsu , Hideaki Yoshida , Toshiyuki Nagase , Hiroto Uchida , Tadaharu Tanaka , Yoshio Kanda , Kenji Morinaga
IPC分类号： H01L23/15 , H01L23/31
CPC分类号： H01L23/3135 , H01L23/15 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L24/45 , H01L24/48 , H01L2924/01014 , H01L2924/0102 , H01L2924/01039 , H01L2924/01046 , H01L2924/01047 , H01L2924/01322 , H01L2924/12042 , H01L2924/14 , H01L2924/181 , H01L2924/19105 , Y10S428/901 , Y10T428/24917
摘要： An insulating substrate is used for fabrication of a thick film circuit and comprises a foundation of aluminum nitride and a surface film structure provided on the foundation, in which the foundation contains at least one oxidizing agent selected from the group consisting of an yttrium oxide and a calcium oxide ranging from 0.1% to 10% by weight for enhancing a stiffness of the foundation, and in which the surface film structure is of the multi-level surface film structure having a lower surface film of an aluminum oxide rapidly grown on the foundation in the presence of the oxidizing agent and an upper surface film containing a silicon oxide and a substance selected from the group consisting of a zirconium oxide, a titanium oxide and a boron oxide for enhancing the resistivity against a firing operation.

19. 发明授权

US5087509A Substrate used for fabrication of thick film circuit 失效
公开(公告)号：US5087509A
公开(公告)日：1992-02-11
申请号：US524936
申请日：1990-05-18
申请人： Yoshirou Kuromitsu , Hideaki Yoshida , Toshiyuki Nagase , Tadaharu Tanaka , Yoshio Kanda
发明人： Yoshirou Kuromitsu , Hideaki Yoshida , Toshiyuki Nagase , Tadaharu Tanaka , Yoshio Kanda
IPC分类号： H01L23/15 , H01L25/16 , H05K3/38
CPC分类号： H01L23/15 , H01L25/16 , H05K3/38 , H01L2224/45147 , H01L2224/48091 , H01L2924/01015 , H01L2924/01047 , H01L2924/01322 , H01L2924/181 , H01L2924/19105 , Y10S428/901 , Y10T428/24802 , Y10T428/24917 , Y10T428/24926
摘要： An insulating substrate is used for fabrication of a thick film circuit provided with a conductive pattern made from a paste containing glass frits, and comprises a foundation containing an aluminum nitride and incidental impurities, and a multi-level surface film structure provided between the foundation and the conductive pattern and having a lower surface film of an aluminum oxide provided on a surface of the foundation, an intermediate surface film provided on the lower surface film and formed of a substance having a relatively small acidity and an upper surface film provided on the intermediate surface film and formed of a substance having a relatively large acidity, in which the substance with the large acidity rapidly reacts with the frits in a firing stage for enhancing the adhesion of the conductive pattern but the substance with the relatively small acidity restricts the consumption thereof, so that the total thickness of the multi-level film structure is decrased and, accordingly, the heat radiation capability is improved.

20. 发明授权

US5075200A Process of forming superconductive wiring strip 失效
标题翻译：形成超导布线的工艺
公开(公告)号：US5075200A
公开(公告)日：1991-12-24
申请号：US415215
申请日：1989-08-24
申请人： Tadashi Sugihara , Yoshio Murakami , Takuo Takeshita
发明人： Tadashi Sugihara , Yoshio Murakami , Takuo Takeshita
IPC分类号： C01G1/00 , C04B41/87 , H01B12/06 , H01B13/00 , H01L21/3205 , H01L21/768 , H01L23/498 , H01L23/52 , H01L39/24
CPC分类号： H01L39/2464 , H01L21/76891 , H01L23/49888 , H01L2924/0002
摘要： A process of forming a superconductive wiring strip incorporates a deposition of a raw material on a mask layer followed by a lift-off stage for patterning the wiring strip, and the mask layer is formed for the miniature wiring strip by using lithographic techniques.

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