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    • 4. 发明授权
    • Process for producing cermet cutting tools having both longitudinal and
granular crystal structures
    • 具有纵向和粒状晶体结构的金属陶瓷切割工具的制造方法
    • US5589223A
    • 1996-12-31
    • US408691
    • 1995-03-21
    • Niro OdaniHironori YoshimuraAkira OsadaTetsuya TanakaSeiichirou Nakamura
    • Niro OdaniHironori YoshimuraAkira OsadaTetsuya TanakaSeiichirou Nakamura
    • C23C16/36C23C30/00C23C16/30
    • C23C16/36C23C30/005Y10T428/24975Y10T428/265
    • A cermet cutting tool, and process for producing the same, comprising a substrate formed from titanium carbo-nitride based cermet, and a hard coating layer of average thickness 0.5.about.20 .mu.m, formed onto the surface of the cermet substrate comprising a lower layer formed from at least one layer of a compound selected from the group consisting of titanium carbide (TiC), titanium nitride (TiN), titanium carbo-nitride (TiCN), titanium carbo-oxide (TiCO) and titanium carbo-oxi-nitride (TiCNO), and aluminum oxide (Al.sub.2 O.sub.3). Additionally, at least one of the layers comprising the hard coating layer is a titanium carbo-nitride layer, and at least one layer of this titanium carbo-nitride layer comprises a longitudinal growth crystal structure, and a further layer comprises a granular crystal structure. In the method of fabrication, chemical vapor deposition is performed using a reaction gas composed of 1.about.5% of TiCl.sub.4, 0.1.about.1% of CH.sub.3 CN, 0.about.25% of N.sub.2 with the remaining portion being composed of H.sub.2, under a reaction temperature of 800.degree..about.900.degree. C. and a reaction pressure of 30.about.200 Torr.
    • 一种金属陶瓷切削工具及其制造方法,包括由碳酸钛基金属陶瓷形成的基板和平均厚度为0.5μm的硬涂层,形成在金属陶瓷基板的表面上,该金属陶瓷基板包括下层 由选自碳化钛(TiC),氮化钛(TiN),碳氮化钛(TiCN),钛碳氧化物(TiCO)和钛碳氧化物氮化物(TiCO)的钛的化合物的至少一层形成, TiCNO)和氧化铝(Al 2 O 3)。 另外,包括硬涂层的层中的至少一层是钛碳氮化物层,并且该钛碳氮化物层的至少一层包含纵向生长晶体结构,另外的层包括颗粒状晶体结构。 在制造方法中,使用由1%的TiCl 4,0.1%的CH 3 CN,0.1%的CH 3 CN组成的反应气体,0%的N 2的剩余部分由H 2组成的反应气体在反应温度下进行化学气相沉积 800℃,反应压力为30℃,反应温度为200Torr。
    • 5. 发明授权
    • Cermet cutting tool and process for producing the same
    • 金属陶瓷切割工具及其制造方法
    • US5436071A
    • 1995-07-25
    • US73328
    • 1993-06-08
    • Niro OdaniHironori YoshimuraAkira OsadaTetsuya TanakaSeiichirou Nakamura
    • Niro OdaniHironori YoshimuraAkira OsadaTetsuya TanakaSeiichirou Nakamura
    • C23C16/36C23C30/00B23P15/28C23C16/30
    • C23C16/36C23C30/005Y10T428/24975Y10T428/265
    • The present invention discloses a cermet cutting tool, and process for producing the same, comprising a substrate formed from titanium carbo-nitride based cermet, and a hard coating layer of average thickness 0.5.about.20 .mu.m, formed onto the surface of the cermet substrate comprising a lower layer formed from at least one layer of a compound selected from the group consisting of titanium carbide (TiC), titanium nitride (TIN), titanium carbo-nitride (TiCN), titanium carbo-oxide (TiCO) and titanium carbo-oxi-nitride (TiCNO), and aluminum oxide (Al.sub.2 O.sub.3). Additionally, at least one of the layers comprising the hard coating layer is a titanium carbo-nitride layer, and at least one layer of this titanium carbo-nitride layer comprises a longitudinal growth crystal structure. The process for producing a cermet cutting tool according to the present invention comprises a step for preparing a substrate from titanium carbo-nitride based cermet, and a step for forming a hard coating layer onto the surface of said substrate using a chemical vapor deposition method wherein in at least one part of this step, chemical vapor deposition is performed using a reaction gas composed of 1.about.5% of TiCl.sub.4, 0.1.about.1% of CH.sub.3 CN, 0.about.25% of N.sub.2 with the remaining portion being composed of H.sub.2, under a reaction temperature of 800.degree..about.900.degree. C. and a reaction pressure of 30.about.200 Torr.
    • 本发明公开了一种金属陶瓷切削工具及其制造方法,其特征在于,包括由碳化钛基金属陶瓷形成的基板和平均厚度为0.5μm的硬涂层,形成在金属陶瓷基板的表面上 包括由选自碳化钛(TiC),氮化钛(TIN),钛碳氮化物(TiCN),钛碳氧化物(TiCO)和钛碳氮化物(TiCO))组成的组中的至少一层化合物形成的下层, 氧化氮化物(TiCNO)和氧化铝(Al 2 O 3)。 另外,包括硬涂层的至少一个层是钛碳氮化物层,并且该钛碳氮化物层的至少一层包括纵向生长晶体结构。 根据本发明的金属陶瓷切削工具的制造方法包括由碳纳米碳基金属陶瓷制备基板的步骤,以及使用化学气相沉积法在所述基板的表面上形成硬涂层的步骤,其中 在该步骤的至少一部分中,使用由1%的TiCl 4,0.1%的CH 3 CN,0.1%的CH 2 CN,0%的N 2组成的反应气体,其余部分由H 2组成的反应气体进行化学气相沉积, 反应温度为800℃,反应温度为30℃,反应温度为200Torr。