专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US07760474B1 Magnetic element utilizing free layer engineering 有权
标题翻译：使用自由层工程的磁性元件
公开(公告)号：US07760474B1
公开(公告)日：2010-07-20
申请号：US11487552
申请日：2006-07-14
申请人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
发明人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
IPC分类号： G11B5/127 , G11C11/14
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11C11/161 , H01L43/10 , Y10T428/115
摘要： A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, a barrier layer, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer. The barrier layer resides between the pinned layer and the free layer and includes MgO. The first ferromagnetic layer resides between the barrier layer and the intermediate layer. The first ferromagnetic layer includes at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent. The first ferromagnetic layer is ferromagnetically coupled with the second ferromagnetic layer. The intermediate layer is configured such that the first ferromagnetic layer has a first crystalline orientation and the second ferromagnetic layer has a second crystalline orientation different from the first ferromagnetic layer.
摘要翻译：描述了一种用于提供磁性元件的方法和系统。该方法和系统包括提供钉扎层，阻挡层和自由层。自由层包括第一铁磁层，第二铁磁层和第一铁磁层与第二铁磁层之间的中间层。阻挡层位于被钉扎层和自由层之间，并且包括MgO。第一铁磁层位于阻挡层和中间层之间。第一铁磁层包括CoFeX和CoNiFeX中的至少一种，其中X选自B，P，Si，Nb，Zr，Hf，Ta，Ti，并且大于零原子百分比且不超过三十个原子百分。第一铁磁层与第二铁磁层铁磁耦合。中间层被配置为使得第一铁磁层具有第一结晶取向，而第二铁磁层具有不同于第一铁磁层的第二晶体取向。

12. 发明授权

US07742328B2 Method and system for providing spin transfer tunneling magnetic memories utilizing non-planar transistors 有权
标题翻译：提供使用非平面晶体管的自旋传输隧道磁存储器的方法和系统
公开(公告)号：US07742328B2
公开(公告)日：2010-06-22
申请号：US11764057
申请日：2007-06-15
申请人： Eugene Chen , Yiming Huai , Alexander A. G. Driskill-Smith
发明人： Eugene Chen , Yiming Huai , Alexander A. G. Driskill-Smith
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L29/785 , H01L29/7853 , H01L29/7854 , Y10S977/935
摘要： A magnetic memory cell and a magnetic memory incorporating the cell are described. The magnetic memory cell includes at least one magnetic element and at least one non-planar selection device. The magnetic element(s) are programmable using write current(s) driven through the magnetic element. The magnetic memory may include a plurality of magnetic storage cells, a plurality of bit lines corresponding to the plurality of magnetic storage cells, and a plurality of source lines corresponding to the plurality of magnetic storage cells.
摘要翻译：描述了包含该单元的磁存储单元和磁存储器。磁存储单元包括至少一个磁性元件和至少一个非平面选择装置。磁性元件可通过驱动通过磁性元件的写入电流来编程。磁存储器可以包括多个磁存储单元，对应于多个磁存储单元的多个位线，以及对应于多个磁存储单元的多个源极线。

13. 发明授权

US07502249B1 Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements 有权
公开(公告)号：US07502249B1
公开(公告)日：2009-03-10
申请号：US11736290
申请日：2007-04-17
申请人： Yunfei Ding
发明人： Yunfei Ding
IPC分类号： G11C11/00
CPC分类号： G11C11/5607 , G11C11/1659 , G11C11/1675 , G11C11/1693 , Y10S977/934 , Y10S977/935
摘要： A method and system for providing and utilizing a magnetic memory are described. The magnetic memory includes a plurality of magnetic storage cells. Each magnetic storage cell includes magnetic element(s) programmable due to spin transfer when a write current is passed through the magnetic element(s) and selection device(s). The method and system include driving a first current in proximity to but not through the magnetic element(s) of a portion of the magnetic storage cells. The first current generates a magnetic field. The method and system also include driving a second current through the magnetic element(s) of the portion of the magnetic storage cells. The first and second currents are preferably both driven through bit line(s) coupled with the magnetic element(s). The first and second currents are turned on at a start time. The second current and the magnetic field are sufficient to program the magnetic element(s).

14. 发明申请

US20090040855A1 METHOD AND SYSTEM FOR PROVIDING A SENSE AMPLIFIER AND DRIVE CIRCUIT FOR SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：用于提供感测放大器和驱动电路的方法和系统，用于旋转转矩磁性随机存取存储器
公开(公告)号：US20090040855A1
公开(公告)日：2009-02-12
申请号：US11834917
申请日：2007-08-07
申请人： Xiao Luo , David Chang-Cheng Yu
发明人： Xiao Luo , David Chang-Cheng Yu
IPC分类号： G11C7/00 , G11C11/06
CPC分类号： G11C11/1673 , G11C11/1659
摘要： A method and system for providing a magnetic memory are described. The method and system include a plurality of magnetic storage cells, a plurality of bit lines, at least one reference line, and at least one sense amplifier. Each magnetic storage cell includes magnetic element(s) and selection device(s). The magnetic element(s) are programmable using write current(s) driven through the magnetic element. The bit and source lines correspond to the magnetic storage cells. The sense amplifier(s) are coupled with the bit lines and reference line(s), and include logic and a plurality of stages. The stages include first and second stages. The first stage converts at least current signal to at least one differential voltage signal. The second stage amplifies the at least one differential voltage signal. The logic selectively disablies at least one of the first and second stages in the absence of a read operation and enabling the first and second stages during the read operation.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括多个磁存储单元，多个位线，至少一个参考线和至少一个读出放大器。每个磁存储单元包括磁性元件和选择装置。磁性元件可通过驱动通过磁性元件的写入电流来编程。位线和源极线对应于磁存储单元。读出放大器与位线和参考线耦合，并且包括逻辑和多个级。阶段包括第一和第二阶段。第一级至少将电流信号转换为至少一个差分电压信号。第二级放大至少一个差分电压信号。在没有读取操作的情况下，逻辑选择性地抵消第一级和第二级中的至少一级，并且在读取操作期间启用第一级和第二级。

15. 发明授权

US07486551B1 Method and system for providing domain wall assisted switching of magnetic elements and magnetic memories using such magnetic elements 有权
标题翻译：使用这种磁性元件提供磁性元件和磁性存储器的畴壁辅助切换的方法和系统
公开(公告)号：US07486551B1
公开(公告)日：2009-02-03
申请号：US11695614
申请日：2007-04-03
申请人： Zhanjie Li , Shengyuan Wang
发明人： Zhanjie Li , Shengyuan Wang
IPC分类号： G11C11/15
CPC分类号： G11C11/1675 , G11C11/161
摘要： A method and system for providing a magnetic element is described. The magnetic element includes a pinned layer, a spacer layer, and a free layer. The spacer layer is nonferromagnetic and resides between the pinned layer and the free layer. The free layer includes a first magnetic layer and at least one of a second magnetic layer and an intermediate layer. The intermediate layer would reside between the first and second magnetic layers. The free layer also includes at least one domain wall therein during switching. In addition, the magnetic element is configured to allow the free layer to be switched at least in part due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：描述了一种用于提供磁性元件的方法和系统。磁性元件包括钉扎层，间隔层和自由层。间隔层是非铁磁性的并且位于被钉扎层和自由层之间。自由层包括第一磁性层和第二磁性层和中间层中的至少一个。中间层将位于第一和第二磁性层之间。自由层在切换期间还包括至少一个畴壁。此外，磁性元件构造成允许自由层至少部分地由于当写入电流通过磁性元件时的自旋转移而被切换。

16. 发明授权

US07379327B2 Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins 有权
标题翻译：利用具有增强的读和写余量的这样的单元使用自旋转移和磁存储的磁存储单元的电流驱动切换
公开(公告)号：US07379327B2
公开(公告)日：2008-05-27
申请号：US11476171
申请日：2006-06-26
申请人： Eugene Youjun Chen , Yiming Huai , Alex Fischer Panchula , Lien-Chang Wang , Xiao Luo
发明人： Eugene Youjun Chen , Yiming Huai , Alex Fischer Panchula , Lien-Chang Wang , Xiao Luo
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory. The magnetic memory includes magnetic storage cells in an array, bit lines, and source lines. Each magnetic storage cell includes at least one magnetic element. The magnetic element(s) are programmable by write currents driven through the magnetic element(s). Each magnetic element has free and pinned layer(s) and a dominant spacer. The magnetic memory is configured such that either the read current(s) flow from the free layer(s) to the dominant spacer if the maximum low resistance state read current divided by the minimum low resistance state write current is greater than the maximum high resistance state read current divided by the minimum high resistance state write current or the read current(s) flow from the dominant spacer to the free layer(s) if the maximum low resistance state read current divided by the minimum low resistance state write current is less than the maximum high resistance state read current divided by the minimum high resistance state write current.
摘要翻译：一种用于提供磁存储器的方法和系统。磁存储器包括阵列中的磁存储单元，位线和源极线。每个磁存储单元包括至少一个磁性元件。磁性元件可以通过驱动通过磁性元件的写入电流来编程。每个磁性元件具有自由和固定的层和主要间隔物。如果最大低电阻状态读取电流除以最小低电阻状态写入电流除以最大高电阻，则磁存储器被配置为使得读取电流从自由层流向主要间隔物如果最小低电阻状态读取电流除以最小低电阻状态写入电流，则状态读取电流除以最小高电阻状态写入电流或从主要间隔物到自由层的读取电流（s）比最大高电阻状态读取电流除以最小高电阻状态写入电流。

17. 发明授权

US07272034B1 Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells 有权
标题翻译：利用自旋转移和使用这种电池的磁存储器的磁存储单元的电流驱动切换
公开(公告)号：US07272034B1
公开(公告)日：2007-09-18
申请号：US11217258
申请日：2005-08-31
申请人： Eugene Youjun Chen , Yiming Huai
发明人： Eugene Youjun Chen , Yiming Huai
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each of the plurality of magnetic storage cells includes at least one magnetic element and a plurality of selection transistors. The at least one magnetic element is capable of being programmed using spin transfer induced switching by a write current driven through the at least one magnetic element. The at least one selection transistor is configured to allow the magnetic element to be alternately selected for writing and reading. Architectures for reading and writing to the magnetic storage cells are also described.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供多个磁存储单元。多个磁存储单元中的每一个包括至少一个磁性元件和多个选择晶体管。至少一个磁性元件能够通过由至少一个磁性元件驱动的写入电流使用自旋转移感应开关来编程。至少一个选择晶体管被配置为允许磁性元件被交替地选择用于写入和读取。还描述了用于读取和写入磁存储单元的体系结构。

18. 发明授权

US07245462B2 Magnetoresistive element having reduced spin transfer induced noise 有权
标题翻译：具有降低的自旋转移诱导噪声的磁阻元件
公开(公告)号：US07245462B2
公开(公告)日：2007-07-17
申请号：US10839064
申请日：2004-05-05
申请人： Yiming Huai , Paul P. Nguyen
发明人： Yiming Huai , Paul P. Nguyen
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/127 , G11B5/33
摘要： A method and system for providing a magnetic element is disclosed. The method and system include providing a ferromagnetic pinned layer, providing a free layer, and providing a spacer layer between the pinned layer and the free layer. The pinned layer and free layer are ferromagnetic and have a pinned layer magnetization and a free layer magnetization, respectively. The spacer layer is nonmagnetic. In one aspect, the free layer is configured to have an increased magnetic damping constant. In another aspect, the method and system also include providing a second pinned layer and a second spacer layer between the free layer and the second pinned layer. In this aspect, the first pinned layer and/or the second pinned layer are configured such that a forward torque and a reflected torque due to a current driven through the magnetic element in a current-perpendicular-to-plane configuration are substantially equal and opposite.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括提供铁磁性钉扎层，提供自由层，并在钉扎层和自由层之间提供间隔层。钉扎层和自由层是铁磁性的，并且分别具有钉扎层磁化和自由层磁化。间隔层是非磁性的。在一个方面，自由层被配置为具有增加的磁阻尼常数。在另一方面，该方法和系统还包括在自由层和第二钉扎层之间提供第二钉扎层和第二间隔层。在这方面，第一被钉扎层和/或第二钉扎层被构造成使得正向扭矩和由电流垂直于平面构造驱动通过磁性元件的电流引起的反射扭矩基本相等并且相反。

19. 发明授权

US07242048B2 Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements 有权
标题翻译：使用自旋转移的具有弹道磁阻的磁性元件和使用这种磁性元件的MRAM器件
公开(公告)号：US07242048B2
公开(公告)日：2007-07-10
申请号：US11413744
申请日：2006-04-28
申请人： Yiming Huai
发明人： Yiming Huai
IPC分类号： H01L29/76
CPC分类号： H01F41/305 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/3227 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/12
摘要： A method and system for providing a magnetic element is disclosed. The method and system include providing a pinned layer, a magnetic current confined layer, and a free layer. The pinned layer is ferromagnetic and has a first pinned layer magnetization. The magnetic current confined layer has at least one channel in an insulating matrix and resides between the pinned layer and the free layer. The channel(s) are ferromagnetic, conductive, and extend through the insulating matrix between the free layer and the pinned layer. The size(s) of the channel(s) are sufficiently small that charge carriers can give rise to ballistic magnetoresistance in the magnetic current confined layer. The free layer is ferromagnetic and has a free layer magnetization. Preferably, the method and system also include providing a second pinned layer and a nonmagnetic spacer layer between the second pinned layer and the free layer. In this aspect, the magnetic element is configured to allow the free layer magnetization to be switched using spin transfer.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括提供钉扎层，磁电流限制层和自由层。钉扎层是铁磁性的并且具有第一钉扎层磁化。磁电流限制层在绝缘基体中具有至少一个通道，并且位于被钉扎层和自由层之间。通道是铁磁性的，导电的，并且延伸穿过自由层和被钉扎层之间的绝缘基体。通道的尺寸足够小，使得载流子可以在磁电流限制层中产生弹道磁阻。自由层是铁磁性的并且具有自由层磁化。优选地，该方法和系统还包括在第二被钉扎层和自由层之间提供第二钉扎层和非磁性间隔层。在这方面，磁性元件被配置为允许使用自旋转移来切换自由层的磁化。

20. 发明授权

US07224601B2 Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element 有权
标题翻译：磁场隧道结记忆元件的振荡场辅助自旋转矩切换
公开(公告)号：US07224601B2
公开(公告)日：2007-05-29
申请号：US11271208
申请日：2005-11-09
申请人： Alex Panchula
发明人： Alex Panchula
IPC分类号： G11C11/00 , G11C11/14
CPC分类号： G11C11/16 , B82Y25/00 , G11C11/1675 , H01F10/3254 , H01F10/329
摘要： Devices and techniques for applying a resonant action by an applied oscillating magnetic field to a magnetic tunnel junction (MTJ) and an action of an applied DC current across the MTJ to effectuate a switching of the MTJ when writing data to the MTJ.
摘要翻译：通过施加的振荡磁场将谐振作用施加到磁隧道结（MTJ）的装置和技术以及跨越MTJ的施加的DC电流的作用，以在向MTJ写入数据时实现MTJ的切换。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式