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1. 发明授权

US07663848B1 Magnetic memories utilizing a magnetic element having an engineered free layer 有权
标题翻译：利用具有工程自由层的磁性元件的磁存储器
公开(公告)号：US07663848B1
公开(公告)日：2010-02-16
申请号：US11523872
申请日：2006-09-20
申请人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
发明人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
IPC分类号： G11B5/127
CPC分类号： H01F10/3254 , B82Y25/00 , G11B5/3906 , G11C11/161 , G11C11/1675 , H01F10/325 , H01F10/3263 , H01F10/3272 , H01L43/08
摘要： A method and system for providing a magnetic memory are described. The method and system include providing a plurality of magnetic storage cells. Each of the magnetic storage cells includes at least one magnetic element. The magnetic element(s) includes a pinned layer, a barrier layer that is a crystalline insulator and has a first crystalline orientation, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first and second ferromagnetic layer. The barrier layer resides between the pinned and free layers. The first ferromagnetic layer resides between the barrier layer and the intermediate layer and is ferromagnetically coupled with the second ferromagnetic layer. The intermediate layer is configured such that the first ferromagnetic layer has the first crystalline orientation and the second ferromagnetic layer has a second crystalline orientation different from the first ferromagnetic layer. The magnetic element is configured to allow the free layer to be switched utilizing spin transfer when a write current is passed through the magnetic element.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供多个磁存储单元。每个磁存储单元包括至少一个磁性元件。磁性元件包括钉扎层，作为结晶绝缘体并具有第一结晶取向的阻挡层和自由层。自由层包括第一铁磁层，第二铁磁层和第一和第二铁磁层之间的中间层。阻挡层位于固定层和自由层之间。第一铁磁层位于阻挡层和中间层之间，并且与第二铁磁层铁磁耦合。中间层被配置为使得第一铁磁层具有第一晶体取向，而第二铁磁层具有不同于第一铁磁层的第二晶体取向。磁性元件配置成当写入电流通过磁性元件时允许利用自旋转移来切换自由层。

2. 发明授权

US07272035B1 Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells 有权
标题翻译：利用自旋转移和使用这种电池的磁存储器的磁存储单元的电流驱动切换
公开(公告)号：US07272035B1
公开(公告)日：2007-09-18
申请号：US11217524
申请日：2005-08-31
申请人： Eugene Youjun Chen , Yiming Huai
发明人： Eugene Youjun Chen , Yiming Huai
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each of the plurality of magnetic storage cells includes a magnetic element and a selection transistor. The magnetic element may be programmed using spin transfer induced switching by a write current driven through the magnetic element. The selection transistor includes a source and a drain. The plurality of magnetic storage cells are grouped in pairs. The source of the selection transistor for one magnetic storage cell of a pair shares the source with the selection transistor for another magnetic storage cell of the pair.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供多个磁存储单元。多个磁存储单元中的每一个包括磁性元件和选择晶体管。磁性元件可以使用通过磁性元件驱动的写入电流进行自旋转移感应开关来编程。选择晶体管包括源极和漏极。多个磁存储单元成对分组。一对一个磁存储单元的选择晶体管的源与该对的另一个磁存储单元的选择晶体管共享源。

3. 发明授权

US07859034B2 Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer 有权
标题翻译：具有邻近自由铁磁层的氧化物反铁磁层的磁性器件
公开(公告)号：US07859034B2
公开(公告)日：2010-12-28
申请号：US12425370
申请日：2009-04-16
申请人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
发明人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909 , G11C11/161 , H01F10/3218 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3268 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers to switch the magnetization of the free ferromagnetic layer.
摘要翻译：诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性领域。具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。可以通过驱动垂直于层的写入电流来转换自由铁磁层的磁化，使用自旋转移感应开关对这种多层结构进行编程。

4. 发明授权

US07777261B2 Magnetic device having stabilized free ferromagnetic layer 有权
标题翻译：具有稳定的自由铁磁层的磁性装置
公开(公告)号：US07777261B2
公开(公告)日：2010-08-17
申请号：US11232356
申请日：2005-09-20
申请人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
发明人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
IPC分类号： H01L29/94
CPC分类号： H01L43/08 , B82Y25/00 , G11B5/3983 , G11C11/161 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3268 , H01L27/228 , H01L43/10
摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers.
摘要翻译：诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性领域。具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。可以通过驱动垂直于层的写入电流，使用自旋转移感应开关对这种多层结构进行编程。

5. 发明申请

US20100072524A1 Magnetic Devices Having Oxide Antiferromagnetic Layer Next To Free Ferromagnetic Layer 有权
标题翻译：具有接近自由铁磁层的氧化物反铁磁层的磁性器件
公开(公告)号：US20100072524A1
公开(公告)日：2010-03-25
申请号：US12425370
申请日：2009-04-16
申请人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
发明人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B5/3909 , G11C11/161 , H01F10/3218 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3268 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers to switch the magnetization of the free ferromagnetic layer.
摘要翻译：诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性领域。具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。可以通过驱动垂直于层的写入电流来转换自由铁磁层的磁化，使用自旋转移感应开关对这种多层结构进行编程。

6. 发明申请

US20100247967A1 MAGNETIC ELEMENT UTILIZING FREE LAYER ENGINEERING 有权
标题翻译：磁性元件利用自由层工程
公开(公告)号：US20100247967A1
公开(公告)日：2010-09-30
申请号：US12816108
申请日：2010-06-15
申请人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
发明人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11C11/161 , H01L43/10 , Y10T428/115
摘要： A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, a barrier layer, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer. The barrier layer resides between the pinned layer and the free layer and includes MgO. The first ferromagnetic layer resides between the barrier layer and the intermediate layer. The first ferromagnetic layer includes at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent. The first ferromagnetic layer is ferromagnetically coupled with the second ferromagnetic layer. The intermediate layer is configured such that the first ferromagnetic layer has a first crystalline orientation and the second ferromagnetic layer has a second crystalline orientation different from the first ferromagnetic layer.
摘要翻译：描述了一种用于提供磁性元件的方法和系统。该方法和系统包括提供钉扎层，阻挡层和自由层。自由层包括第一铁磁层，第二铁磁层和第一铁磁层与第二铁磁层之间的中间层。阻挡层位于被钉扎层和自由层之间，并且包括MgO。第一铁磁层位于阻挡层和中间层之间。第一铁磁层包括CoFeX和CoNiFeX中的至少一种，其中X选自B，P，Si，Nb，Zr，Hf，Ta，Ti，并且大于零原子百分比且不超过三十个原子百分。第一铁磁层与第二铁磁层铁磁耦合。中间层被配置为使得第一铁磁层具有第一结晶取向，而第二铁磁层具有不同于第一铁磁层的第二晶体取向。

7. 发明授权

US07791931B2 Current driven memory cells having enhanced current and enhanced current symmetry 有权
标题翻译：具有增强的电流和增强的电流对称性的电流驱动存储单元
公开(公告)号：US07791931B2
公开(公告)日：2010-09-07
申请号：US12413535
申请日：2009-03-28
申请人： Eugene Youjun Chen , Yiming Huai
发明人： Eugene Youjun Chen , Yiming Huai
IPC分类号： G11C11/00
CPC分类号： G11C11/1697 , G11C11/1653 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C2013/0071 , G11C2013/0073
摘要： A method and system for providing and using a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element is programmed by write currents driven through the magnetic element in a first or second direction. In one aspect, the method and system include providing a voltage supply and a voltage pump coupled with the magnetic storage cells and the voltage supply. The voltage supply provides a supply voltage. The voltage pump provides to the selection device a bias voltage having a magnitude greater than the supply voltage. Another aspect includes providing a silicon on oxide transistor as the selection device. Another aspect includes providing to the body of the transistor a body bias voltage that is a first voltage when the transistor is off and a second voltage when the transistor is on.
摘要翻译：描述了一种用于提供和使用磁存储器的方法和系统。该方法和系统包括提供多个磁存储单元。每个磁存储单元包括磁性元件和与磁性元件耦合的选择装置。通过在第一或第二方向通过磁性元件驱动的写入电流来对磁性元件进行编程。一方面，该方法和系统包括提供与磁存储单元和电压源耦合的电压源和电压泵。电源提供电源电压。电压泵向选择装置提供具有大于电源电压的幅度的偏置电压。另一方面包括在氧化物晶体管上提供硅作为选择装置。另一方面包括向晶体管的主体提供当晶体管截止时为第一电压的体偏置电压，以及晶体管导通时的第二电压。

8. 发明授权

US07760474B1 Magnetic element utilizing free layer engineering 有权
标题翻译：使用自由层工程的磁性元件
公开(公告)号：US07760474B1
公开(公告)日：2010-07-20
申请号：US11487552
申请日：2006-07-14
申请人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
发明人： Yiming Huai , Zhitao Diao , Eugene Youjun Chen
IPC分类号： G11B5/127 , G11C11/14
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11C11/161 , H01L43/10 , Y10T428/115
摘要： A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, a barrier layer, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer. The barrier layer resides between the pinned layer and the free layer and includes MgO. The first ferromagnetic layer resides between the barrier layer and the intermediate layer. The first ferromagnetic layer includes at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent. The first ferromagnetic layer is ferromagnetically coupled with the second ferromagnetic layer. The intermediate layer is configured such that the first ferromagnetic layer has a first crystalline orientation and the second ferromagnetic layer has a second crystalline orientation different from the first ferromagnetic layer.
摘要翻译：描述了一种用于提供磁性元件的方法和系统。该方法和系统包括提供钉扎层，阻挡层和自由层。自由层包括第一铁磁层，第二铁磁层和第一铁磁层与第二铁磁层之间的中间层。阻挡层位于被钉扎层和自由层之间，并且包括MgO。第一铁磁层位于阻挡层和中间层之间。第一铁磁层包括CoFeX和CoNiFeX中的至少一种，其中X选自B，P，Si，Nb，Zr，Hf，Ta，Ti，并且大于零原子百分比且不超过三十个原子百分。第一铁磁层与第二铁磁层铁磁耦合。中间层被配置为使得第一铁磁层具有第一结晶取向，而第二铁磁层具有不同于第一铁磁层的第二晶体取向。

9. 发明授权

US07379327B2 Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins 有权
标题翻译：利用具有增强的读和写余量的这样的单元使用自旋转移和磁存储的磁存储单元的电流驱动切换
公开(公告)号：US07379327B2
公开(公告)日：2008-05-27
申请号：US11476171
申请日：2006-06-26
申请人： Eugene Youjun Chen , Yiming Huai , Alex Fischer Panchula , Lien-Chang Wang , Xiao Luo
发明人： Eugene Youjun Chen , Yiming Huai , Alex Fischer Panchula , Lien-Chang Wang , Xiao Luo
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory. The magnetic memory includes magnetic storage cells in an array, bit lines, and source lines. Each magnetic storage cell includes at least one magnetic element. The magnetic element(s) are programmable by write currents driven through the magnetic element(s). Each magnetic element has free and pinned layer(s) and a dominant spacer. The magnetic memory is configured such that either the read current(s) flow from the free layer(s) to the dominant spacer if the maximum low resistance state read current divided by the minimum low resistance state write current is greater than the maximum high resistance state read current divided by the minimum high resistance state write current or the read current(s) flow from the dominant spacer to the free layer(s) if the maximum low resistance state read current divided by the minimum low resistance state write current is less than the maximum high resistance state read current divided by the minimum high resistance state write current.
摘要翻译：一种用于提供磁存储器的方法和系统。磁存储器包括阵列中的磁存储单元，位线和源极线。每个磁存储单元包括至少一个磁性元件。磁性元件可以通过驱动通过磁性元件的写入电流来编程。每个磁性元件具有自由和固定的层和主要间隔物。如果最大低电阻状态读取电流除以最小低电阻状态写入电流除以最大高电阻，则磁存储器被配置为使得读取电流从自由层流向主要间隔物如果最小低电阻状态读取电流除以最小低电阻状态写入电流，则状态读取电流除以最小高电阻状态写入电流或从主要间隔物到自由层的读取电流（s）比最大高电阻状态读取电流除以最小高电阻状态写入电流。

10. 发明申请

US20070279968A1 Method and system for providing a magnetic memory structure utilizing spin transfer 有权
标题翻译：提供利用自旋转移的磁记忆体结构的方法和系统
公开(公告)号：US20070279968A1
公开(公告)日：2007-12-06
申请号：US11446391
申请日：2006-06-01
申请人： Xiao Luo , Eugene Youjun Chen , Lien-Chang Wang , Yiming Huai
发明人： Xiao Luo , Eugene Youjun Chen , Lien-Chang Wang , Yiming Huai
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C8/12 , G11C8/14 , G11C11/1657 , G11C11/1659 , G11C11/1673
摘要： A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programmed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供磁存储器单元，局部和全局字线，位线和源极线。每个磁存储单元包括磁性元件和与该磁性元件连接的选择装置。磁性元件通过在第一和第二方向通过磁性元件驱动的第一和第二写入电流来编程。局部字线与第一电阻率的选择装置连接。每个全局字线对应于局部字线的一部分，并具有低于第一电阻率的电阻率。位线与磁性元件连接。源极线与选择器件连接。每个源极线对应于多个磁存储器单元并且承载第一和第二写入电流。

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