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11. 发明授权

US07656733B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US07656733B2
公开(公告)日：2010-02-02
申请号：US12059220
申请日：2008-03-31
申请人： Masao Shinozaki , Hajime Sato
发明人： Masao Shinozaki , Hajime Sato
IPC分类号： G11C7/02
CPC分类号： G11C7/22 , G11C7/227 , G11C11/412 , G11C11/419 , G11C2207/229
摘要： This invention provides a semiconductor memory device with enhanced speed performance or enabling timing adjustment reflected in characteristic variation of memory cells, adapted to suppress an increase in the number of circuit elements. A write dummy bit section comprises a first dummy line and a second dummy line corresponding to complementary bit lines and a plurality of first dummy cells formed to be similar in shape to static memory cells, wherein a write current path is coupled between the first dummy line and the second dummy line. In the write dummy bit section, one voltage level is input to the first dummy line through driver MOSFETs in relation to write signal inputs to the static memory cells and a signal change in the second dummy line precharged at the other voltage level is sensed and output. A timing control circuit deselects a word line selected by an output signal from the write dummy bit section.
摘要翻译：本发明提供了一种半导体存储器件，其具有增强的速度性能或能够反映在存储器单元的特性变化中的时序调整，适于抑制电路元件数量的增加。写入虚拟位部分包括对应于互补位线的第一虚拟线和第二虚拟线以及形状与静态存储单元类似的多个第一虚拟单元，其中写入电流路径耦合在第一虚拟线和第二虚线。在写入虚拟位部分中，相对于静态存储器单元的写信号输入，通过驱动器MOSFET将一个电压电平输入到第一虚拟线，并且在另一电压电平处预充电的第二虚拟线中的信号变化被感测和输出。定时控制电路取消由写入虚拟位部分的输出信号选择的字线。

12. 发明申请

US20090253038A1 BIPOLAR BATTERY AND METHOD OF MANUFACTURING SAME 有权
标题翻译：双极电池及其制造方法
公开(公告)号：US20090253038A1
公开(公告)日：2009-10-08
申请号：US12375569
申请日：2007-11-22
申请人： Teruo Segawa , Hajime Sato , Kenji Hosaka , Gen Takayama
发明人： Teruo Segawa , Hajime Sato , Kenji Hosaka , Gen Takayama
IPC分类号： H01M10/18 , H01M10/00 , B30B9/00 , B30B13/00
CPC分类号： H01M10/044 , H01M4/131 , H01M4/133 , H01M4/8631 , H01M10/0404 , H01M10/052 , H01M10/0565 , H01M10/058 , H01M10/0585 , H01M2010/0495 , Y02T10/7011 , Y10T29/10 , Y10T29/49108 , Y10T29/49115
摘要： An apparatus and a method for manufacturing a bipolar battery are disclosed, which are capable of restraining the introduction of a bubble, resulting in superior battery performance. A bipolar battery is disclosed for preparing an electrolyte layer, which includes permeable separators such that the electrolytes can penetrate therein and a bipolar electrode wherein a cathode is formed at one side of a collector and an anode is formed at another side of the collector. Then, the electrolyte layers are stacked upon one another. When the electrolyte layer is provided to the bipolar electrode, bubbles within the electrolyte layer are exhausted from one side to another side of the separator via the separator.
摘要翻译：公开了一种用于制造双极电池的装置和方法，其能够抑制气泡的引入，导致优异的电池性能。公开了一种用于制备电解质层的双极电池，其包括可渗透的电解质的可渗透分离器，以及在集电体的一侧形成阴极并且在集电体的另一侧形成阳极的双极电极。然后，电解质层彼此堆叠。当向双极电极提供电解质层时，电解质层内的气泡经由隔板从分离器的一侧排出到另一侧。

13. 发明授权

US07580308B2 Semiconductor memory device and refresh method for the same 有权
标题翻译：半导体存储器件和刷新方法相同
公开(公告)号：US07580308B2
公开(公告)日：2009-08-25
申请号：US11812420
申请日：2007-06-19
申请人： Hajime Sato , Yuji Nakagawa , Satoru Kawamoto
发明人： Hajime Sato , Yuji Nakagawa , Satoru Kawamoto
IPC分类号： G11C7/00
CPC分类号： G11C7/02 , G11C11/406 , G11C11/40615 , G11C11/4085 , G11C2211/4065 , G11C2211/4068
摘要： A refresh method for a semiconductor memory device features high noise resistance, lower power consumption, and lower cost. All word lines of one or more memory cell blocks that have not been selected in a self refresh mode are controlled to have a floating potential substantially at ground level. Even when a word line and a bit line are short-circuited, this control prevents destruction of memory cell information, which may be caused by noise, and also prevents generation of leakage current. A fuse, etc., for preventing generation of leakage current is unnecessary, so that lower cost is realized.
摘要翻译：用于半导体存储器件的刷新方法具有高抗噪性，较低的功耗和较低的成本。在自刷新模式下未被选择的一个或多个存储单元块的所有字线被控制为具有基本上处于地平面的浮动电位。即使当字线和位线短路时，该控制也可以防止可能由噪声引起的存储单元信息的破坏，并且还防止漏电流的产生。不需要用于防止产生泄漏电流的保险丝等，从而实现较低的成本。

14. 发明申请

US20090104062A1 COMPRESSOR 有权
标题翻译：压缩机
公开(公告)号：US20090104062A1
公开(公告)日：2009-04-23
申请号：US12250697
申请日：2008-10-14
申请人： Kazuya Kondo , Hajime Sato , Yoshiyuki Kimata
发明人： Kazuya Kondo , Hajime Sato , Yoshiyuki Kimata
IPC分类号： F04C29/02 , F04C23/02 , F04C18/04
CPC分类号： F04C23/008 , F04C18/0215 , F04C18/3564 , F04C23/005 , F04C29/025
摘要： There is provided a compressor capable of feeding lubricating oil to a blade of a rotary type compression mechanism even if the oil level in an oil reservoir lowers. The compressor 1 includes a low stage-side rotary type compression mechanism 3 having a rotor 34, and a blade 38 reciprocating with the rotation of the rotor 34 while the tip end thereof is in contact with the rotor 34; a high stage-side scroll type compression mechanism 4 for sucking and compressing refrigerant gas compressed by the low stage-side rotary type compression mechanism 3; a positive displacement lubrication pump 60 for feeding lubricating oil 27 to the high stage-side scroll type compression mechanism 4; and an oil feeding path for feeding the lubricating oil 27, which is fed to the high stage-side scroll type compression mechanism 4, toward the blade 38 of the low stage-side rotary type compression mechanism 3.
摘要翻译：提供一种能够将润滑油供给到旋转式压缩机构的叶片的压缩机，即使油箱中的油位下降。压缩机1包括具有转子34的低段侧旋转式压缩机构3和与转子34的旋转同时旋转的叶片38，同时其前端与转子34接触; 用于吸入和压缩由低级侧旋转式压缩机构3压缩的制冷剂气体的高级侧涡旋式压缩机构4; 用于将润滑油27供给到高级侧涡旋式压缩机构4的容积式润滑泵60; 以及供给到高级侧涡旋式压缩机构4的润滑油27朝向低段侧旋转式压缩机构3的叶片38供给的供油路径。

15. 发明申请

US20090093118A1 POLISHING COMPOSITION 审中-公开
标题翻译：抛光组合物
公开(公告)号：US20090093118A1
公开(公告)日：2009-04-09
申请号：US11911508
申请日：2006-04-14
申请人： Nobuo Uotani , Hiroshi Takahashi , Takashi Sato , Hajime Sato
发明人： Nobuo Uotani , Hiroshi Takahashi , Takashi Sato , Hajime Sato
IPC分类号： H01L21/461 , C09G1/02
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , C09K3/1463
摘要： In order to polish a wiring metal, a polishing composition ensuring that etching and erosion are suppressed and the residual wiring metal on the portion other than wiring is decreased, is provided, in which a polishing composition comprising (A) an azole group-containing compound having 3 or more azole groups within the molecule and a molecular weight of 300 to 15,000, (B) an oxidant, and (C) one, two or more acids selected from the group consisting of an amino acid, an organic acid and an inorganic acid is provided.
摘要翻译：为了研磨布线金属，可以提供确保蚀刻和侵蚀的抛光组合物，并且布线以外的部分上的残留布线金属减少，其中包含（A）含唑类化合物在分子内具有3个或更多个唑基，分子量为300至15,000，（B）氧化剂，和（C）选自氨基酸，有机酸和无机酸的一种或多种酸提供酸。

16. 发明申请

US20080173129A1 Crankshaft 有权
标题翻译：曲轴
公开(公告)号：US20080173129A1
公开(公告)日：2008-07-24
申请号：US12007901
申请日：2008-01-16
申请人： Hajime Sato , Yoshiyuki Kimata
发明人： Hajime Sato , Yoshiyuki Kimata
IPC分类号： F16C3/06 , F04B17/03
CPC分类号： F01C1/0215 , F01C1/3564 , F01C11/006 , F04C23/005 , F04C23/008 , F04C29/0057 , F04C29/0085 , F04C2240/60 , F16C2360/42 , Y10T74/211
摘要： A crankshaft is to be provided that allows its assembly process to be simplified, work hours required for the assembly process to be shortened and a manufacturing cost to be reduced. The crankshaft is provided with first eccentric section and second eccentric section at respective ends while interposing a shaft section therebetween and has such a shape that a peripheral edge of the first eccentric section and/or the second eccentric section is positioned radially inside of a peripheral edge of the shaft section.
摘要翻译：要提供一种可以简化其组装过程的曲轴，缩短组装过程所需的工作时间以及降低制造成本。曲轴在各端部设置有第一偏心部和第二偏心部，同时在其间插入轴部，并且具有第一偏心部和/或第二偏心部的周缘位于周缘的径向内侧的形状的轴段。

17. 发明申请

US20080131775A1 BIPOLAR BATTERY AND METHOD OF MANUFACTURING SAME 有权
标题翻译：双极电池及其制造方法
公开(公告)号：US20080131775A1
公开(公告)日：2008-06-05
申请号：US11936159
申请日：2007-11-07
申请人： Gen Takayama , Hajime Sato , Kenji Hosaka
发明人： Gen Takayama , Hajime Sato , Kenji Hosaka
IPC分类号： H01M4/00 , H01M10/36 , H01M10/38
CPC分类号： H01M2/08 , H01M2/1653 , H01M10/0418 , H01M10/052 , H01M10/0585 , Y02T10/7011 , Y10T29/49108
摘要： Bipolar batteries configured to minimize the introduction of gas bubbles and methods of manufacturing such batteries are taught herein. One bipolar battery includes an electrolyte layer, which includes a plurality of separators having permeability such that the electrolytes can penetrate therein, in a bipolar electrode wherein a cathode is formed at one side of a collector and an anode is formed at another side of the collector. A stack is formed by stacking the electrolyte layers upon one another. The electrolyte layer of the stack has a layer of overlayed separators.
摘要翻译：配置为最小化引入气泡的双极电池和制造这种电池的方法在本文中被教导。一个双极电池包括电解质层，其包括具有渗透性的多个分离器，使得电解质可以渗入其中，在双极电极中，其中阴极形成在集电体的一侧，阳极形成在集电体的另一侧。通过将电解质层彼此堆叠形成堆叠。堆叠的电解质层具有层叠的隔板。

18. 发明申请

US20080068656A1 PRINTING APPARATUS AND PRINT CONTROL METHOD 有权
标题翻译：打印设备和打印控制方法
公开(公告)号：US20080068656A1
公开(公告)日：2008-03-20
申请号：US11855891
申请日：2007-09-14
申请人： Hajime Sato
发明人： Hajime Sato
IPC分类号： G06F15/00
CPC分类号： H04N1/32363 , H04N1/32609 , H04N1/32635 , H04N1/32673 , H04N1/32678 , H04N2201/0082 , H04N2201/3288 , H04N2201/3298
摘要： A printing apparatus includes a built-in hard disk drive configured to operate as a mass storage device. The printing apparatus includes an HDD control unit configured to store print image data into the hard disk drive; a secondary storage unit configured to store the print image data; an HDD state detection unit configured to detect a state of the hard disk drive; and a storage method changing unit configured to change a storage method of the print image data based on the state of the hard disk drive detected by the HDD state detection unit.
摘要翻译：打印设备包括被配置为作为大容量存储设备操作的内置硬盘驱动器。打印设备包括：HDD控制单元，被配置为将打印图像数据存储到硬盘驱动器中; 配置为存储打印图像数据的次要存储单元; HDD状态检测单元，被配置为检测硬盘驱动器的状态; 以及存储方法改变单元，被配置为基于由HDD状态检测单元检测到的硬盘驱动器的状态来改变打印图像数据的存储方法。

19. 发明授权

US07248525B2 Semiconductor memory device and refresh method for the same 有权
标题翻译：半导体存储器件和刷新方法相同
公开(公告)号：US07248525B2
公开(公告)日：2007-07-24
申请号：US11070888
申请日：2005-03-03
申请人： Hajime Sato , Yuji Nakagawa , Satoru Kawamoto
发明人： Hajime Sato , Yuji Nakagawa , Satoru Kawamoto
IPC分类号： G11C7/00
CPC分类号： G11C7/02 , G11C11/406 , G11C11/40615 , G11C11/4085 , G11C2211/4065 , G11C2211/4068
摘要： A refresh method for a semiconductor memory device features high noise resistance, lower power consumption, and lower cost. All word lines of one or more memory cell blocks that have not been selected in a self refresh mode are controlled to have a floating potential substantially at ground level. Even when a word line and a bit line are short-circuited, this control prevents destruction of memory cell information, which may be caused by noise, and also prevents generation of leakage current. A fuse, etc., for preventing generation of leakage current is unnecessary, so that lower cost is realized.
摘要翻译：用于半导体存储器件的刷新方法具有高抗噪性，较低的功耗和较低的成本。在自刷新模式下未被选择的一个或多个存储单元块的所有字线被控制为具有基本上处于地平面的浮动电位。即使当字线和位线短路时，该控制也可以防止可能由噪声引起的存储单元信息的破坏，并且还防止漏电流的产生。不需要用于防止产生泄漏电流的保险丝等，从而实现较低的成本。

20. 发明申请

US20070019457A1 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US20070019457A1
公开(公告)日：2007-01-25
申请号：US11452232
申请日：2006-06-14
申请人： Hajime Sato , Masao Shinozaki
发明人： Hajime Sato , Masao Shinozaki
IPC分类号： G11C5/06
CPC分类号： G11C7/18 , G11C7/02 , G11C7/1051 , G11C7/106 , G11C7/1069 , G11C7/1078 , G11C7/1084 , G11C11/4087 , G11C11/4093 , G11C11/4097
摘要： The present invention provides a semiconductor memory device in which the number of write amplifiers is decreased by increasing the number of bit line pairs connected to one pair of common write data lines. Further, by decreasing the number of bit line pairs connected to one pair of common read data lines, parasitic capacitance connected to the pair of common read data lines is reduced and, accordingly, time in which the potential difference between the pair of common read data lines increases is shortened. Thus, while preventing enlargement of the chip layout area, read time can be shortened.
摘要翻译：本发明提供一种半导体存储器件，其中通过增加连接到一对公共写入数据线的位线对的数量来减少写入放大器的数量。此外，通过减少连接到一对公共读取数据线的位线对的数量，减少连接到该对公共读取数据线的寄生电容，并且因此减小了该对公共读取数据之间的电位差线条增加缩短。因此，在防止芯片布局区域扩大的同时，可以缩短读取时间。

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