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11. 发明授权

US06708546B2 Honeycomb hydrogen storage structure with restrictive neck 失效
标题翻译：具有限制性颈部的蜂窝储氢结构
公开(公告)号：US06708546B2
公开(公告)日：2004-03-23
申请号：US10173381
申请日：2002-06-17
申请人： Vitaliy Myasnikov , Baoquan Huang , Rosa Young , Stanford R. Ovshinsky
发明人： Vitaliy Myasnikov , Baoquan Huang , Rosa Young , Stanford R. Ovshinsky
IPC分类号： F17C1100
CPC分类号： B01D53/0415 , B01D53/02 , B01D53/0438 , B01D53/0446 , B01D2253/1126 , B01D2253/25 , B01D2253/3425 , B01D2257/108 , B01D2258/0208 , B01D2259/40092 , B01D2259/4525 , B01D2259/4566 , C01B3/0005 , F17C11/005 , Y02E60/321 , Y02E60/324
摘要： Heat transfer management/compartmentalization system for a metal hydride hydrogen storage containment unit. The hydrogen storage alloy is preferably divided into compartments having a honeycomb configuration. Heat exchanger tubing is placed through the compartments to promote heat transfer between the hydrogen storage alloy and the exterior environment.
摘要翻译：用于金属氢化物储氢容器的换热管理/分隔系统。储氢合金优选分成具有蜂窝结构的隔室。热交换器管被放置通过隔间以促进储氢合金和外部环境之间的热传递。

12. 发明授权

US5597411A Method of forming a single crystal material 失效
标题翻译：形成单晶材料的方法
公开(公告)号：US5597411A
公开(公告)日：1997-01-28
申请号：US656697
申请日：1991-02-19
申请人： Helmut Fritzsche , Stanford R. Ovshinsky , Rosa Young
发明人： Helmut Fritzsche , Stanford R. Ovshinsky , Rosa Young
IPC分类号： C30B23/04 , C30B23/08 , C30B25/02 , C30B25/04 , C30B25/18 , C30B29/22 , H01L21/203 , H01L39/24
CPC分类号： H01L39/2448 , C30B25/02 , C30B25/18 , C30B29/22 , H01L39/2422 , H01L39/2432 , Y10S505/819
摘要： A method of growing an epitaxial like, single crystal, superconducting film by promoting the epitaxial-like growth of film from a single nucleation site in deference to substantially all other nucleation sites on the substrate. The present invention contemplates the use of a mask to systematically expose sections of the substrate to the deposition apparatus. This mask may include an adjustable or fixed aperture and is manipulated as herein described to systematically expose areas of the substrate to the deposition apparatus.
摘要翻译：通过从衬底上的基本上所有其它成核位置的单个成核位点促进膜的外延生长，生长外延像单晶超导膜的方法。本发明考虑使用掩模来系统地将基底的部分暴露于沉积设备。该掩模可以包括可调整或固定的孔，并且如本文所述被操纵以系统地将基板的区域暴露于沉积设备。

13. 发明授权

US5340792A Method of aligning the discrete grains of a multi-grained super-conducting material 失效
标题翻译：对准多晶超导材料的离散晶粒的方法
公开(公告)号：US5340792A
公开(公告)日：1994-08-23
申请号：US442380
申请日：1989-11-28
申请人： Stanford R. Ovshinsky , Rosa Young
发明人： Stanford R. Ovshinsky , Rosa Young
IPC分类号： C04B35/00 , C01B13/14 , C01G1/00 , C01G3/00 , C04B35/45 , C30B29/22 , H01L39/24 , H01B12/00
CPC分类号： H01L39/2419 , Y10S428/93 , Y10S505/742 , Y10S505/778 , Y10S505/78
摘要： A method of substantially aligning the superconducting grains of a multi-grained perovskite defect oxide type material, which material includes at least one superconducting phase. In the superconducting phase of such perovskite materials, the unit cells thereof include a plurality of substantially parallel metal oxide planes spacedly disposed along the c axis thereof. The aforementioned alignment of discrete grains of the multi-grained superconducting material occurs along the c axis.
摘要翻译：一种使多晶钙钛矿缺陷氧化物型材料的超导晶粒基本对准的方法，该材料包括至少一个超导相。在这种钙钛矿材料的超导相中，其单元电池包括沿其c轴间隔设置的多个基本平行的金属氧化物平面。多晶粒超导材料的离散晶粒的上述对准沿c轴发生。

14. 发明授权

US5198414A In-situ growth of flourounated superconducting, Y-Ba-Cu-O thin films on sapphire substrates with a buffer layer by laser ablation 失效
标题翻译：通过激光烧蚀在具有缓冲层的蓝宝石衬底上的氟化超导Y-Ba-Cu-O薄膜的原位生长
公开(公告)号：US5198414A
公开(公告)日：1993-03-30
申请号：US770733
申请日：1991-10-01
申请人： Stanford R. Ovshinsky , Rosa Young , Gerard Van der Leeden , Benjamin S. Chao
发明人： Stanford R. Ovshinsky , Rosa Young , Gerard Van der Leeden , Benjamin S. Chao
IPC分类号： C23C14/08 , C30B23/02 , H01L39/24
CPC分类号： H01L39/2461 , C23C14/087 , C30B23/002 , C30B23/02 , C30B29/22 , C30B29/225 , Y10S505/73 , Y10S505/732 , Y10S505/785
摘要： A laser ablation method for forming a fluorinated superconducting Y-Ba-Cu-O thin film on a sapphire substrate is disclosed, which comprises the steps of: (1) depositing a barrier layer of BaAl.sub.2 O.sub.4 on the sapphire substrate; (2) placing the coated substrate and a tagret in a deposition chamber, said target including fluorine, barium, yttrium, copper and oxygen; (3) providing a background atmosphere including at least partial pressure of O.sub.2 within the chamber; (4) heating the coated substrate to a temperature above ambient; (5) laser-ablating the target material onto the heated substrate while controlling the partial pressure of O.sub.2 in said background atmosphere and the temperature of said heated substrate so that the as-deposited thin film on said substrate is superconductive.
摘要翻译：公开了一种用于在蓝宝石衬底上形成氟化超导Y-Ba-Cu-O薄膜的激光烧蚀方法，其包括以下步骤：（1）在蓝宝石衬底上沉积BaAl 2 O 4阻挡层; （2）将涂布的基板和标签放置在沉积室中，所述目标包括氟，钡，钇，铜和氧; （3）提供在室内至少包括O 2分压的背景气氛; （4）将涂覆的基材加热到高于环境温度的温度; （5）在控制所述背景气氛中的O 2分压和所述被加热衬底的温度的同时将目标材料激光烧蚀到加热的衬底上，使得所述衬底上沉积的薄膜是超导的。

15. 发明授权

US06536487B2 Atomically engineered hydrogen storage alloys having extended storage capacity at high pressures and high pressure hydrogen storage units containing variable amounts thereof 有权
公开(公告)号：US06536487B2
公开(公告)日：2003-03-25
申请号：US09901816
申请日：2001-07-10
申请人： Stanford R. Ovshinsky , Rosa Young , Baoquan Huang
发明人： Stanford R. Ovshinsky , Rosa Young , Baoquan Huang
IPC分类号： B65B104
CPC分类号： C22C1/0408 , B22F9/008 , B22F2998/00 , B32B15/01 , C01B3/0005 , C01B3/0031 , C01B3/0057 , C01B3/0084 , C01B3/38 , C01B2203/0233 , C01B2203/0261 , C01B2203/0805 , C01B2203/085 , C22C1/04 , C22C22/00 , C22C23/00 , C22C23/02 , C22C23/06 , F17C11/005 , F17C2221/012 , F17C2260/046 , F17C2270/0184 , H01M8/065 , Y02E60/321 , Y02E60/327 , Y10S420/90
摘要： Atomically engineered hydrogen storage alloys which include a spectrum of hydrogen bonding energies and multiple hydride phases which extends and enhances their storage capacity at high pressures and high pressure hydrogen storage units which contain a variable amount of these hydrogen storage alloys therein to enhance the storage capacity of the unit beyond that obtainable by conventional alloys or pressurized hydrogen gas alone.

16. 发明授权

US5567241A Method and apparatus for the improved microwave deposition of thin films 失效
标题翻译：改进薄膜微波沉积的方法和装置
公开(公告)号：US5567241A
公开(公告)日：1996-10-22
申请号：US442146
申请日：1995-05-16
申请人： David V. Tsu , Rosa Young , Stanford R. Ovshinsky
发明人： David V. Tsu , Rosa Young , Stanford R. Ovshinsky
IPC分类号： C23C16/511 , C23C16/517 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32211 , C23C16/511 , C23C16/517 , H01J37/321 , H01J37/32192 , H01J37/32678 , H01J2237/3321
摘要： A first aspect of the present invention is an improved microwave vacuum feed-through device for coupling microwave energy from a microwave wave guide in a substantially atmospheric pressure region into an elongated linear microwave applicator in a sub-atmospheric pressure region. The improved feed-through is designed to match the impedance of the microwave wave guide in the atmospheric pressure region and the improved linear microwave applicator. A second aspect of the present invention is an improved linear microwave applicator for uniformly coupling 95% or more of the microwave energy input thereto into an elongated plasma zone. The applicator includes curved microwave reflector panels which are used to tune the uniformity of the radiated microwave energy along the length of the linear applicator. A third aspect of the present invention is a microwave enhanced chemical vapor deposition method for depositing thin film material. The method includes a step of intensifying the kinetic/thermal energy of the electrically neutral species in the plasma by intensifying the kinetic/thermal energy of the ions in the plasma and thereby, through ion-neutral collisions, intensifying the kinetic/thermal energy of the electrically neutral species. The step of intensifying the kinetic/thermal energy of the ions in the plasma includes subjecting the plasma to either a very low frequency alternating current electrical bias or an alternating polarity magnetic field, the frequency of thereof being less than about 100 kHz.
摘要翻译：本发明的第一方面是一种改进的微波真空馈通装置，用于将微波能量从大气压力区域中的微波波导耦合到亚大气压区域中的细长线性微波施加器。改进的馈通被设计成匹配大气压区域中的微波波导的阻抗和改进的线性微波施加器。本发明的第二方面是一种改进的线性微波施加器，用于将输入到其中的95％或更多的微波能量均匀地耦合到细长的等离子体区域中。施加器包括弯曲的微波反射器面板，其用于调节辐射的微波能量沿着线性施加器的长度的均匀性。本发明的第三方面是用于沉积薄膜材料的微波增强化学气相沉积方法。该方法包括通过增强等离子体中的离子的动能/热能来增强等离子体中的电中性物质的动力学/热能，从而通过离子中性碰撞强化其中的动能/热能电中性物种。增强等离子体中离子的动能/热能的步骤包括使等离子体经受非常低频的交流电偏压或交替极性磁场，其频率小于约100kHz。

17. 发明授权

US5324553A Method for the improved microwave deposition of thin films 失效
标题翻译：改进薄膜微波沉积的方法
公开(公告)号：US5324553A
公开(公告)日：1994-06-28
申请号：US89207
申请日：1993-07-09
申请人： Stanford R. Ovshinsky , David V. Tsu , Rosa Young
发明人： Stanford R. Ovshinsky , David V. Tsu , Rosa Young
IPC分类号： C23C16/511 , C23C16/517 , H01J37/32 , B05D3/06
CPC分类号： H01J37/32211 , C23C16/511 , C23C16/517 , H01J37/321 , H01J37/32192 , H01J37/32678 , H01J2237/3321
摘要： An improved chemical vapor deposition method for the high-rate low-temperature deposition of high-quality thin film material. The method includes the steps of providing an evacuated chamber having a plasma deposition region defined therein; placing a substrate inside the chamber; supplying plasma deposition precursor gases to the deposition region in the evacuated chamber; directing microwave energy from a source thereof to the deposition region, the microwave energy interacting with the deposition precursor gases to form a plasma of electrons, ions and activated electrically neutral species, the plasma including one or more depositing species; increasing the surface mobility of the depositing species in the plasma by coupling additional non-microwave electronic energy and magnetic energy into the plasma, without intentionally adding thermal energy to the substrate or precursor gas; and depositing a thin film of material onto the substrate.
摘要翻译：一种改进的化学气相沉积方法，用于高速低温沉积的高品质薄膜材料。该方法包括以下步骤：提供具有限定在其中的等离子体沉积区域的真空室; 将衬底放置在腔室内; 将等离子体沉积前体气体供应到所述抽真空室中的沉积区域; 将微波能量从其源引导到沉积区域，所述微波能量与沉积前体气体相互作用以形成电子，离子和活化的电中性物质的等离子体，所述等离子体包括一种或多种沉积物质; 通过将额外的非微波电子能量和磁能耦合到等离子体中来增加沉积物质在等离子体中的表面迁移率，而无需向基底或前体气体添加热能; 以及在衬底上沉积材料薄膜。

18. 发明授权

US5124310A Laser ablation method for depositing fluorinated Y-Ba-Cu-O superconducting film having basal plane alignment of the unit cells deposited on non-lattice-matched substrates 失效
标题翻译：用于沉积荧光的Y-BA-CU-O超导膜的激光吸收方法具有在非层叠衬底上沉积的单元电极的基础平面对准
公开(公告)号：US5124310A
公开(公告)日：1992-06-23
申请号：US570190
申请日：1990-08-20
申请人： Stanford R. Ovshinsky , Rosa Young
发明人： Stanford R. Ovshinsky , Rosa Young
IPC分类号： C01G1/00 , C01G3/00 , C23C14/08 , C23C14/28 , C30B23/02 , C30B23/08 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/24
CPC分类号： C23C14/28 , C23C14/087 , H01L39/2448 , Y10S505/731 , Y10S505/78
摘要： A thin film, fluorinated, ceramic defect-oxide type superconducting material grown on a substrate such as sapphire or stainless steel. The superconducting material is characterized by basal plane alignment of the unit cells thereof even though the substrate does not possess a perovskite-type lattice structure. A laser ablation technique is used to evaporate material from a fluorinated pellet of target material to deposit the fluorinated superconducing material on the substrate, which is heated during the deposition process. The instant invention provides for a low pressure and relatively low temperature method of depositing a superconducting film which is characterized by (1) a minimal number of high angle grain boundaries typically associated with polycrystalline films, and (2) aligned a, b, and c axes of the unit cells thereof so as to provide for enhanced current carrying capacities. Further, the method of this invention provides for the deposition of superconducting material without a post deposition anneal. Large area, irregularly shaped rolls of inexpensive substrate material can be uniformly covered by the method described herein.

19. 发明授权

US5004725A Parametrically modified superconductor material 失效
标题翻译：参数改性超导材料
公开(公告)号：US5004725A
公开(公告)日：1991-04-02
申请号：US441847
申请日：1989-11-27
申请人： Stanford R. Ovshinsky , Rosa Young
发明人： Stanford R. Ovshinsky , Rosa Young
IPC分类号： C04B35/45 , H01L39/12
CPC分类号： H01L39/126 , C04B35/4504 , Y10S505/78
摘要： An oxide type superconducting material comprising a plurality of metal species and oxygen in combined form, said superconducting material improved by the addition of a parametric modifier.
摘要翻译：包含多个金属物质和组合形式的氧的氧化物型超导材料，所述超导材料通过添加参数改性剂而得到改善。

20. 发明授权

US4710899A Data storage medium incorporating a transition metal for increased switching speed 失效
标题翻译：包含过渡金属以提高切换速度的数据存储介质
公开(公告)号：US4710899A
公开(公告)日：1987-12-01
申请号：US742813
申请日：1985-06-10
申请人： Rosa Young , Stanford R. Ovshinsky
发明人： Rosa Young , Stanford R. Ovshinsky
IPC分类号： G11B7/0055 , G11B7/243 , G11B7/257 , G11C13/00
CPC分类号： G11B7/257 , G11B7/00557 , G11B7/243 , G11B2007/24306 , G11B2007/24316 , G11B2007/2571 , G11B2007/25715 , G11B7/00454 , G11B7/2542 , Y10S430/146
摘要： A data storage medium which includes a transition metal as a switching modulator is disclosed. The data storage medium is switchable by projected beam energy, has an erased signal to noise ratio that is substantially invariant with respect to written storage time, and a contrast ratio that is substantially invariant with respect to cycle history. The data storage medium is substantially oxygen free and comprises a chalcogenide and a switching modulator. The switching modulator is a transition metal, especially from the right hand column of Group VIII, e.g. nickel (Ni), palladium (Pd), and platinum (Pt). The concentration of the switching modulator in the data storage medium is high enough to suppress grain growth during written storage, to provide random crystallite orientation and to increase the erase velocity, but low enough to permit discrimination between detectable written and erased states of the data storage medium.
摘要翻译：公开了一种包括过渡金属作为开关调制器的数据存储介质。数据存储介质可以通过投射的光束能量切换，具有相对于写入的存储时间基本上不变的擦除的信噪比，以及相对于循环历史基本上不变的对比度比。数据存储介质基本上是无氧的并且包括硫族化物和开关调制器。开关调制器是过渡金属，特别是来自第VIII族的右栏，例如镍（Ni），钯（Pd）和铂（Pt）。数据存储介质中的开关调制器的浓度足够高以抑制书写存储期间的晶粒生长，以提供随机微晶取向并增加擦除速度，但是足够低以允许区分数据存储器的可检测的写入和擦除状态中。

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