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11. 发明授权

US06265282B1 Process for making an isolation structure 有权
公开(公告)号：US06265282B1
公开(公告)日：2001-07-24
申请号：US09135474
申请日：1998-08-17
申请人： Richard Lane , Randhir Thakur
发明人： Richard Lane , Randhir Thakur
IPC分类号： H01L2176
CPC分类号： H01L21/76224 , Y10T428/31623
摘要： A novel shallow-trench isolation (STI) structure and process for forming it is described. More particularly, a recess is formed in a semiconductor substrate. An oxide layer is formed in the recess using thermal oxidation or high-pressure oxidation. If the oxide layer is formed by high-pressure oxidation, then a nitrogen containing gas may be flowed into a high-pressure oxidation chamber to add nitrogen to the oxide layer. The recess may then be filled with a dielectric layer by a deposition process. Alternately, the dielectric layer may be formed using high-pressure oxidation.

12. 发明授权

US06217784B1 High selectivity etching process for oxides 失效
公开(公告)号：US06217784B1
公开(公告)日：2001-04-17
申请号：US09652426
申请日：2000-08-31
申请人： Randhir Thakur , James Pan
发明人： Randhir Thakur , James Pan
IPC分类号： B44C122
CPC分类号： H01L28/40 , H01L21/30604 , H01L21/31111 , H01L21/31116
摘要： A process for etching oxides having differing densities which is not only highly selective, but which also produces uniform etches is provided and includes the steps of providing an oxide layer on a surface of a substrate, exposing the oxide layer to a liquid comprising a halide-containing species, and exposing the oxide layer to a gas phase comprising a halide-containing species. The process desirably is used to selectively etch a substrate surface in which the surface of the substrate includes on a first portion thereof a first silicon oxide and on a second portion thereof a second silicon oxide, with the first silicon oxide being relatively more dense than the second silicon oxide, such as, for example, a process which forms a capacitor storage cell on a semiconductor substrate.

13. 发明授权

US08536492B2 Processing multilayer semiconductors with multiple heat sources 有权
标题翻译：加工具有多个热源的多层半导体
公开(公告)号：US08536492B2
公开(公告)日：2013-09-17
申请号：US11187188
申请日：2005-07-22
申请人： Sundar Ramamurthy , Andreas G. Hegedus , Randhir Thakur
发明人： Sundar Ramamurthy , Andreas G. Hegedus , Randhir Thakur
IPC分类号： F27B5/14
CPC分类号： H01L21/67103
摘要： A method and apparatus for rapid thermal annealing comprising a plurality of lamps affixed to a lid of the chamber that provide at least one wavelength of light, a laser source extending into the chamber, a substrate support positioned within a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber. A method and apparatus for rapid thermal annealing comprising a plurality of lamps comprising regional control of the lamps and a cooling gas distribution system affixed to a lid of the chamber, a heated substrate support with magnetic levitation extending through a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber.
摘要翻译：一种用于快速热退火的方法和装置，包括固定到室的盖上的多个灯，其提供至少一个波长的光，延伸到腔室中的激光源，位于腔室的基座内的基底支撑件，固定到基板支撑件的环，以及与盖和基座的底部连通的气体分配组件。一种用于快速热退火的方法和装置，包括多个灯，其包括灯的区域控制和固定到所述室的盖的冷却气体分配系统，具有延伸穿过所述室的基部的磁悬浮的加热衬底支撑件，固定到基板支撑件的环，以及与盖和基座的底部连通的气体分配组件。

14. 发明申请

US20130013847A1 STORAGE SUB-SYSTEM FOR A COMPUTER COMPRISING WRITE-ONCE MEMORY DEVICES AND WRITE-MANY MEMORY DEVICES AND RELATED METHOD 有权
标题翻译：用于包含写入存储器件和写入多个存储器件的计算机的存储子系统及相关方法
公开(公告)号：US20130013847A1
公开(公告)日：2013-01-10
申请号：US13616986
申请日：2012-09-14
申请人： Roy E. Scheuerlein , Randhir Thakur , Christopher Moore
发明人： Roy E. Scheuerlein , Randhir Thakur , Christopher Moore
IPC分类号： G06F12/02
CPC分类号： G06F12/0638 , G06F11/1415 , G06F12/1425 , G06F2212/2142
摘要： Methods and apparatus for a solid state non-volatile storage sub-system of a computer is provided. The storage sub-system may include a write-many storage sub-system memory device including write-many memory cells, a write-once storage sub-system memory device including write-once memory cells, and a page-based interface that is adapted to read and write the write-once and write-many storage sub-system memory devices. Numerous other aspects are provided.
摘要翻译：提供了一种计算机固态非易失性存储子系统的方法和装置。存储子系统可以包括包括多写存储器单元的多写存储子系统存储器设备，包括一次写入存储器单元的一次写入存储子系统存储器件以及适配的基于页面的接口读写多个存储子系统存储器件。提供了许多其他方面。

15. 发明申请

US20100173495A1 SUBSTRATE PROCESSING APPARATUS USING A BATCH PROCESSING CHAMBER 审中-公开
标题翻译：使用批处理室的基板处理装置
公开(公告)号：US20100173495A1
公开(公告)日：2010-07-08
申请号：US12724935
申请日：2010-03-16
申请人： Randhir Thakur , Steve G. Ghanayem , Joseph Yudovsky , Aaron Webb , Adam Alexander Brailove , Nir Merry , Vinay K. Shah , Andreas G. Hegedus
发明人： Randhir Thakur , Steve G. Ghanayem , Joseph Yudovsky , Aaron Webb , Adam Alexander Brailove , Nir Merry , Vinay K. Shah , Andreas G. Hegedus
IPC分类号： H01L21/302 , H01L21/316 , H01L21/314 , C23C16/00
CPC分类号： H01L21/67109 , C23C16/4412 , C23C16/45546 , C23C16/45593 , C23C16/4584 , C23C16/481 , C23C16/54 , H01L21/67017 , H01L21/67115 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/67745 , H01L21/67757 , H01L21/67781
摘要： Aspects of the invention include a method and apparatus for processing a substrate using a multi-chamber processing system (e.g., a cluster tool) adapted to process substrates in one or more batch and/or single substrate processing chambers to increase the system throughput. In one embodiment, a system is configured to perform a substrate processing sequence that contains batch processing chambers only, or batch and single substrate processing chambers, to optimize throughput and minimize processing defects due to exposure to a contaminating environment. In one embodiment, a batch processing chamber is used to increase the system throughput by performing a process recipe step that is disproportionately long compared to other process recipe steps in the substrate processing sequence that are performed on the cluster tool. In another embodiment, two or more batch chambers are used to process multiple substrates using one or more of the disproportionately long processing steps in a processing sequence. Aspects of the invention also include an apparatus and method for delivering a precursor to a processing chamber so that a repeatable ALD or CVD deposition process can be performed.
摘要翻译：本发明的方面包括使用适于在一个或多个批次和/或单个基板处理室中处理基板以增加系统吞吐量的多室处理系统（例如，集群工具）来处理基板的方法和装置。在一个实施例中，系统被配置为执行仅包含批处理室的衬底处理序列，或批处理和单个衬底处理室，以优化生产量并且由于暴露于污染环境而最小化处理缺陷。在一个实施例中，批处理室用于通过执行与在集群工具上执行的衬底处理序列中的其他工艺配方步骤相比不成比例地长的工艺配方步骤来增加系统吞吐量。在另一个实施方案中，使用两个或更多个间隔室来处理多个基板，使用处理顺序中的一个或多个不成比例的长处理步骤。本发明的方面还包括用于将前体输送到处理室的装置和方法，使得可以执行可重复的ALD或CVD沉积工艺。

16. 发明申请

US20090205677A1 METHOD AND APPARATUS FOR WAFER CLEANING 审中-公开
标题翻译：用于清洗的方法和装置
公开(公告)号：US20090205677A1
公开(公告)日：2009-08-20
申请号：US12423760
申请日：2009-04-14
申请人： Randhir Thakur , Steven Verhaverbeke , J. Kelly Truman
发明人： Randhir Thakur , Steven Verhaverbeke , J. Kelly Truman
IPC分类号： B08B3/12
CPC分类号： H01L21/67051 , B08B3/024 , B08B3/12
摘要： A single wafer cleaning apparatus that includes a rotatable bracket that can hold a wafer, a rinse fluid having a first surface tension, a second fluid having a second surface tension lower than the first surface tension, a first nozzle capable of applying the rinse fluid at a first location on the wafer positioned in the bracket, second nozzle capable of applying the second fluid at a second location on the wafer where the second location is inboard of the first location, and the first nozzle and the second nozzle are capable of moving across the wafer to translate the first location and the second location from the wafer center to the wafer outer edge.
摘要翻译：一种单晶片清洁装置，其包括可容纳晶片的可旋转托架，具有第一表面张力的冲洗流体，具有低于第一表面张力的第二表面张力的第二流体，能够将冲洗流体施加到第一表面张力的第一喷嘴位于所述晶片上的位于所述支架中的第一位置，所述第二喷嘴能够在所述晶片上的第二位置处施加所述第二流体，其中所述第二位置在所述第一位置的内侧，并且所述第一喷嘴和所述第二喷嘴能够跨越晶片将第一位置和第二位置从晶片中心平移到晶片外边缘。

17. 发明申请

US20090172321A1 STORAGE SUB-SYSTEM FOR A COMPUTER COMPRISING WRITE-ONCE MEMORY DEVICES AND WRITE-MANY MEMORY DEVICES AND RELATED METHOD 有权
标题翻译：用于包含写入存储器件和写入多个存储器件的计算机的存储子系统及相关方法
公开(公告)号：US20090172321A1
公开(公告)日：2009-07-02
申请号：US11967987
申请日：2007-12-31
申请人： Roy E. Scheuerlein , Randhir Thakur , Christopher Moore
发明人： Roy E. Scheuerlein , Randhir Thakur , Christopher Moore
IPC分类号： G06F12/14 , G06F12/02 , G06F12/16
CPC分类号： G06F12/0638 , G06F11/1415 , G06F12/1425 , G06F2212/2142
摘要： Methods and apparatus for a solid state non-volatile storage sub-system of a computer is provided. The storage sub-system may include a write-once storage sub-system memory device and a write-many storage sub-system memory device. Numerous other aspects are provided.
摘要翻译：提供了一种计算机固态非易失性存储子系统的方法和装置。存储子系统可以包括一次写入存储子系统存储器设备和多写存储子系统存储器设备。提供了许多其他方面。

18. 发明申请

US20090010626A1 PROCESSING MULTILAYER SEMICONDUCTORS WITH MULTIPLE HEAT SOURCES 失效
标题翻译：用多个热源处理多层半导体
公开(公告)号：US20090010626A1
公开(公告)日：2009-01-08
申请号：US12212487
申请日：2008-09-17
申请人： SUNDAR RAMAMURTHY , Andreas G. Hegedus , Randhir Thakur
发明人： SUNDAR RAMAMURTHY , Andreas G. Hegedus , Randhir Thakur
IPC分类号： A21B2/00
CPC分类号： H01L21/67103
摘要： A method of adjusting the heat transfer properties within a processing chamber is presented. Chamber properties may be determined and adjusted by adjusting the thermal mass of an edge ring disposed in the processing chamber.
摘要翻译：提出了一种在处理室内调节传热特性的方法。可以通过调节设置在处理室中的边缘环的热质量来确定和调整室特性。

19. 发明申请

US20070196011A1 INTEGRATED VACUUM METROLOGY FOR CLUSTER TOOL 审中-公开
标题翻译：集成真空系统集成工具
公开(公告)号：US20070196011A1
公开(公告)日：2007-08-23
申请号：US11610468
申请日：2006-12-13
申请人： Damon Cox , Todd Egan , Randhir Thakur , Arkadii Samoilov , Per-Ove Hansson
发明人： Damon Cox , Todd Egan , Randhir Thakur , Arkadii Samoilov , Per-Ove Hansson
IPC分类号： H01L21/66 , G06K9/00
CPC分类号： G01N21/33 , H01L21/67109 , H01L21/67115 , H01L21/67161 , H01L21/67167 , H01L21/67196 , H01L21/67207 , H01L21/67745
摘要： Aspects of the invention generally provide an apparatus and method for processing substrates using a multi-chamber processing system that is adapted to process substrates and analyze the results of the processes performed on the substrate. In one aspect of the invention, one or more analysis steps and/or pre-processing steps are performed on the substrate to provide data for processes performed on subsequent substrates. In one aspect of the invention, a system controller and one or more analysis devices are utilized to monitor and control a process chamber recipe and/or a process sequence to reduce substrate scrap due to defects in the formed device and device performance variability issues. Embodiments of the present invention also generally provide methods and a system for repeatably and reliably forming semiconductor devices used in a variety of applications.
摘要翻译：本发明的方面通常提供一种使用多室处理系统来处理衬底的装置和方法，所述多室处理系统适于处理衬底并分析在衬底上执行的工艺的结果。在本发明的一个方面，在衬底上执行一个或多个分析步骤和/或预处理步骤以提供在后续衬底上执行的处理的数据。在本发明的一个方面，系统控制器和一个或多个分析装置用于监测和控制处理室配方和/或处理顺序，以减少由于所形成的装置中的缺陷和装置性能变异性问题引起的衬底废料。本发明的实施例还通常提供了用于可重复且可靠地形成用于各种应用的半导体器件的方法和系统。

20. 发明申请

US20060246679A1 FORMING INTEGRATED CIRCUITS USING SELECTIVE DEPOSITION OF UNDOPED SILICON FILM SEEDED IN CHLORINE AND HYDRIDE GAS 失效
标题翻译：使用选择性沉积在氯化物和氢气中的无机硅膜形成集成电路
公开(公告)号：US20060246679A1
公开(公告)日：2006-11-02
申请号：US11425607
申请日：2006-06-21
申请人： Randhir Thakur , James Pan
发明人： Randhir Thakur , James Pan
IPC分类号： H01L21/20
CPC分类号： H01L28/84 , C23C16/045 , C23C16/24 , C23C16/56 , H01L21/0245 , H01L21/02505 , H01L21/02532 , H01L21/0262 , H01L21/02664 , H01L27/10852 , H01L28/90 , H01L28/91 , Y10S438/964
摘要： A polysilicon film is formed with enhanced selectivity by flowing chlorine during the formation of the film. The chlorine acts as an etchant to insulative areas adjacent polysilicon structures on which the film is desired to be formed. Bottom electrodes for capacitors are formed using this process, followed by an anneal to create hemishperical grain (HSG) polysilicon. Multilayer capacitor containers are formed in a non-oxidizing ambient so that no oxide is formed between the layers. The structure formed is planarized to form separate containers made from doped and undoped amorphous silicon layers. Selected ones of undoped layers are seeded in a chlorine containing environment and annealed to form HSG. A dielectric layer and second electrode are formed to complete the cell capacitor.
摘要翻译：通过在膜的形成期间流动氯，形成具有增强的选择性的多晶硅膜。氯作为蚀刻剂，其邻近多晶硅结构的绝缘区域需要形成薄膜。使用该工艺形成用于电容器的底部电极，随后进行退火以产生半球形晶粒（HSG）多晶硅。多层电容器容器形成在非氧化环境中，使得在层之间不形成氧化物。所形成的结构被平坦化以形成由掺杂和未掺杂的非晶硅层制成的分离的容器。将选定的未掺杂层接种在含氯环境中并退火以形成HSG。形成电介质层和第二电极以完成电池电容器。

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