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    • 9. 发明申请
    • Semiconductor constructions
    • 半导体结构
    • US20070117347A1
    • 2007-05-24
    • US11655386
    • 2007-01-17
    • Hongmei WangFred FishburnJanos FucskoT. AllenRichard LaneRobert HansonKevin Shea
    • Hongmei WangFred FishburnJanos FucskoT. AllenRichard LaneRobert HansonKevin Shea
    • H01L21/76
    • H01L21/76232
    • The invention includes methods of forming isolation regions. An opening can be formed to extend into a semiconductor material, and an upper periphery of the opening can be protected with a liner while a lower periphery is unlined. The unlined portion can then be etched to form a widened region of the opening. Subsequently, the opening can be filled with insulative material to form an isolation region. Transistor devices can then be formed on opposing sides of the isolation region, and electrically isolated from one another with the isolation region. The invention also includes semiconductor constructions containing an electrically insulative isolation structure extending into a semiconductor material, with the structure having a bulbous bottom region and a stem region extending upwardly from the bottom region to a surface of the semiconductor material.
    • 本发明包括形成隔离区域的方法。 可以形成开口以延伸到半导体材料中,并且可以用衬垫保护开口的上周边,而下边缘是无衬里的。 然后可以对无衬里部分进行蚀刻以形成开口的加宽区域。 随后,开口可以用绝缘材料填充以形成隔离区域。 晶体管器件然后可以形成在隔离区域的相对侧上,并且与隔离区域彼此电隔离。 本发明还包括包含延伸到半导体材料中的电绝缘隔离结构的半导体结构,其结构具有球形底部区域和从底部区域向上延伸到半导体材料表面的杆区域。