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    • 15. 发明授权
    • Process for producing per-p-toluic acid and utilizing the same
    • 每对甲苯甲酸生产方法及其应用
    • US3981909A
    • 1976-09-21
    • US562805
    • 1975-03-27
    • Nobuo IsogaiTakashi OkawaTakako Takeda
    • Nobuo IsogaiTakashi OkawaTakako Takeda
    • C01B15/022C07C51/00C07C51/255C07C409/30C07D301/14C07C179/10
    • C07C45/80C01B15/022C07C407/00C07C45/81C07C51/00C07C51/255C07C67/08C07D301/14
    • P-Tolualdehyde freed from reaction-inhibiting substances is autooxidized by a gas containing molecular oxygen in an aliphatic ketone or fatty acid ester solvent under pressure in the absence of catalyst to produce per-p-toluic acid. The resulting per-p-toluic acid is brought into contact with a lower olefin in the absence of catalyst to produce p-toluic acid and an alkylene oxide at the same time, or said per-p-toluic acid is reacted with allyl alcohol to produce glycidol and p-toluic acid at the same time, and further the resulting glycidol is hydrolyzed to produce glycerin, or said per-p-toluic acid is reacted with methanol in the presence of an esterification catalyst to produce hydrogen peroxide and methyl p-toluate at the same time. The foregoing reactions can be carried out easily and safely in simple processes in high yields.
    • 在不存在催化剂的情况下,在脂肪族酮或脂肪酸酯溶剂中,通过含有分子氧的气体,将从反应抑制物质中除去的P-甲醛自动氧化,生成对 - 对甲苯甲酸。 在不存在催化剂的情况下,使所得的对 - 对甲苯甲酸与低级烯烃接触,同时产生对甲苯甲酸和环氧烷烃,或将所述每对甲苯甲酸与烯丙醇反应, 同时产生缩水甘油和对甲苯甲酸,进一步将所得缩水甘油酯水解制备甘油,或者在酯化催化剂存在下使所述每对甲苯甲酸与甲醇反应生成过氧化氢和对甲苯磺酸甲酯, 同时甲苯甲酸。 上述反应可以在高产率的简单方法中容易且安全地进行。
    • 16. 发明申请
    • LATERAL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
    • 横向半导体器件及其制造方法
    • US20130309867A1
    • 2013-11-21
    • US13976266
    • 2011-02-08
    • Hiroomi EguchiTakashi OkawaAtsushi Onogi
    • Hiroomi EguchiTakashi OkawaAtsushi Onogi
    • H01L29/66H01L21/306
    • H01L29/6625H01L21/30604H01L29/4236H01L29/66325H01L29/7394
    • A manufacturing method for manufacturing a lateral semiconductor device having an SOI (Silicon on Insulator) substrate, the lateral semiconductor device comprising a semiconductor layer that includes a buried oxide layer and a drift region, the manufacturing method comprising an etching process of etching, by a predetermined depth, a LOCOS oxide that projects from a surface of the semiconductor layer by a predetermined thickness and is embedded in the semiconductor layer by a predetermined thickness, and a trench forming process of simultaneously forming a first trench extending from the drift region toward the buried oxide layer, and a second trench extending from a portion obtained by the etching in the etching process toward the buried oxide layer, at a same etching rate, and stopping forming the first trench and the second trench at a time when the second trench reaches the buried oxide layer.
    • 一种用于制造具有SOI(绝缘体上硅)衬底的横向半导体器件的制造方法,所述横向半导体器件包括包括掩埋氧化物层和漂移区的半导体层,所述制造方法包括通过蚀刻的蚀刻工艺, 预定深度,从半导体层的表面突出预定厚度并以预定厚度嵌入到半导体层中的LOCOS氧化物,以及沟槽形成工艺,其同时形成从漂移区延伸到掩埋的第一沟槽 氧化物层,以及从蚀刻处理中通过蚀刻获得的部分以相同的蚀刻速率向掩埋氧化物层延伸的第二沟槽,并且在第二沟槽到达第二沟槽时停止形成第一沟槽和第二沟槽 掩埋氧化层。