专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 再颁专利

USRE33193E Ion beam processing apparatus and method of correcting mask defects 失效
标题翻译：离子束处理装置及矫正掩模缺陷的方法
公开(公告)号：USRE33193E
公开(公告)日：1990-04-03
申请号：US22059
申请日：1987-03-05
申请人： Hiroshi Yamaguchi , Tateoki Miyauchi , Akira Shimase , Mikio Hongo
发明人： Hiroshi Yamaguchi , Tateoki Miyauchi , Akira Shimase , Mikio Hongo
IPC分类号： G03F1/74 , H01J37/30 , H01J37/305
CPC分类号： G03F1/74 , H01J37/3007 , H01J37/3053
摘要： Disclosed is an ion beam processing apparatus comprising within a vacuum container a specimen chamber with a table for mounting a specimen provided therein, a high intensity ion source, such as a liquid metal ion source or an electric field ionizing ion source which operates in ultra-low temperature, confronting the specimen chamber, an extraction electrode for extracting an ion beam out of the ion source, a charged-particle optical system for focusing the ion beam to a spot, and an aperture for adjusting the spot diameter.

12. 发明授权

US4868068A IC wiring connecting method and resulting article 失效
标题翻译： IC接线方式及其结果
公开(公告)号：US4868068A
公开(公告)日：1989-09-19
申请号：US32753
申请日：1987-03-31
申请人： Hiroshi Yamaguchi , Mikio Hongo , Tateoki Miyauchi , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi , Keiya Saito
发明人： Hiroshi Yamaguchi , Mikio Hongo , Tateoki Miyauchi , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi , Keiya Saito
IPC分类号： B21C27/00 , H01L21/00 , H01L21/3205 , H01L21/44 , H01L21/768 , H01L23/48 , H01L23/52 , H05K3/00 , H05K3/40
CPC分类号： H01L21/76879 , H01J37/3056 , H01L21/32051 , H01L21/67138 , H01L21/76892 , H05K3/0017 , H05K3/4076 , Y10S428/901 , Y10S438/94 , Y10S438/961 , Y10T428/12361 , Y10T428/31678
摘要： A IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.
摘要翻译：一种用于互连用于校正布线的IC芯片的相同布线面的导线的IC布线连接方法，用于将相同位置处的多层IC芯片的不同布线通道的导线相互连接，或用于连接下层导体线多层IC芯片的布线平面形成在同一多层IC芯片上的分离位置上的导线。覆盖要互连的导电线的绝缘膜或膜由诸如浓缩离子束的能量束进行处理，以形成孔，以便露出导线与互连的相应部分，然后金属为通过在气态有机金属化合物的气氛中通过能量束或浓缩离子束照射孔和区域的表面而沉积在孔的表面上的区域和互连孔的区域，以形成导电金属膜，导线。还提供了一种用于执行IC布线连接方法的装置，其包括作为主要组成部分的离子束材料处理系统，诸如激光诱导CVD单元的绝缘膜形成系统，导电膜形成系统和绝缘体电影蚀刻系统。

13. 发明授权

US4609566A Method and apparatus for repairing defects on a photo-mask pattern 失效
标题翻译：用于修复光掩模图案上的缺陷的方法和装置
公开(公告)号：US4609566A
公开(公告)日：1986-09-02
申请号：US713860
申请日：1985-03-20
申请人： Mikio Hongo , Katsurou Mizukoshi , Tateoki Miyauchi , Takao Kawanabe , Yasuhiro Koizumi
发明人： Mikio Hongo , Katsurou Mizukoshi , Tateoki Miyauchi , Takao Kawanabe , Yasuhiro Koizumi
IPC分类号： G03F1/00 , G03F1/72 , H01L21/027 , B05D3/06 , C23C14/00 , C23C16/00
CPC分类号： G03F1/72 , Y10S430/146
摘要： A photo-mask is mounted on a repairing chamber, with its mask pattern forming surface being exposed to the interior of the chamber. Vaporized repairing material which includes a metallic element is introduced into the chamber, and a laser beam is projected from the exterior of the chamber onto a transparent defect of the mask pattern. The irradiated portion is heated and the vaporized repairing material at the heated portion is resolved, resulting in the metal resolved from the repairing material deposits and fills the transparent defect. Thus, transparent defects of a mask pattern can be repaired in a simplified process.
摘要翻译：光掩模安装在修理室上，其掩模图案形成表面暴露于室的内部。将包含金属元素的汽化修复材料引入室中，并且将激光束从腔室的外部突出到掩模图案的透明缺陷上。照射部分被加热，并且在加热部分处的蒸发的修复材料被分解，导致从修复材料中分解的金属沉积并填充透明缺陷。因此，可以在简化的过程中修复掩模图案的透明缺陷。

14. 发明授权

US4503329A Ion beam processing apparatus and method of correcting mask defects 失效
标题翻译：离子束处理装置及矫正掩模缺陷的方法
公开(公告)号：US4503329A
公开(公告)日：1985-03-05
申请号：US427584
申请日：1982-09-29
申请人： Hiroshi Yamaguchi , Tateoki Miyauchi , Akira Shimase , Mikio Hongo
发明人： Hiroshi Yamaguchi , Tateoki Miyauchi , Akira Shimase , Mikio Hongo
IPC分类号： G01Q10/00 , G01Q30/02 , G03F1/00 , G03F1/72 , G03F1/74 , H01J37/30 , H01J37/305 , H01L21/027 , H01L21/30 , G01N23/00
CPC分类号： H01L21/30 , G03F1/74 , H01J37/3007 , H01J37/3053 , H01J2237/0044 , H01J2237/0807
摘要： Disclosed is an ion beam processing apparatus comprising within a vacuum container a specimen chamber with a table for mounting a specimen provided therein, a high intensity ion source, such as a liquid metal ion source or an electric field ionizing ion source which operates in ultra-low temperature, confronting the specimen chamber, an extraction electrode for extracting an ion beam out of the ion source, a charged-particle optical system for focusing the ion beam to a spot, and an aperture for adjusting the spot diameter.
摘要翻译：公开了一种离子束处理装置，在真空容器内具有试样室，具有用于安装其中设置的试样的工作台，高强度离子源，例如液体金属离子源或电场离子源，低温，对准样品室，用于从离子源中提取离子束的提取电极，用于将离子束聚焦到点的带电粒子光学系统和用于调节光斑直径的孔。

15. 发明授权

US5832595A Method of modifying conductive lines of an electronic circuit board and its apparatus 失效
标题翻译：修改电子电路板导线及其装置的方法
公开(公告)号：US5832595A
公开(公告)日：1998-11-10
申请号：US260382
申请日：1994-06-14
申请人： Shigenobu Maruyama , Mikio Hongo , Haruhisa Sakamoto , Tateoki Miyauchi , Ryohei Satoh , Kiyoshi Matsui , Shinichi Kazui , Kaoru Katayama , Hiroshi Fukuda
发明人： Shigenobu Maruyama , Mikio Hongo , Haruhisa Sakamoto , Tateoki Miyauchi , Ryohei Satoh , Kiyoshi Matsui , Shinichi Kazui , Kaoru Katayama , Hiroshi Fukuda
IPC分类号： H01L23/538 , H01L21/48 , H01L23/12 , H05K1/09 , H05K3/00 , H05K3/02 , H05K3/10 , H05K3/22
CPC分类号： H01L21/485 , H05K3/225 , H05K1/095 , H05K2203/0769 , H05K2203/0783 , H05K2203/107 , H05K2203/108 , H05K2203/121 , H05K2203/173 , H05K2203/175 , H05K3/0017 , H05K3/027 , H05K3/102 , Y10T29/49124 , Y10T29/49718 , Y10T29/49732
摘要： A method of modifying an electronic circuit board by performing disconnection or connection of conductive lines at a specified or an arbitrary position of the conductive lines of the electronic circuit board thereby changing an electric circuit and of completely modifying an open pattern defect of the conductive lines or an insulator layer, and its device, wherein a first energy beam is irradiated to portions of repair terminals 9 and 9' which are intended to connect or disconnect, of conductive lines 5 and 5' in the electronic circuit board thereby removing a protection layer, making windows and exposing the terminals 9 and 9' for connection; a second energy beam is irradiated thereby disconnecting the repair terminals 9 and 9', or a metal piece for connecting is supplied to between the repair terminals 9 and 9' and applying an energy thereto thereby electrically connecting them; and the disconnected or connected windowed portion is locally coated with the insulator layer thereby modifying the conductive lines of the electronic circuit board. Further, windows 311 or 311' is formed in an insulating protection layer 310 on a conductive line connecting portion 308 formed in a couple or a conductive line disconnecting portion 309, a conductive line of the conductive line disconnecting portion is disconnected or a liquid material 312 for connecting conductive lines is supplied to the conductive line connecting portion 308, a metal layer 313 is precipitated by heating the liquid material 312 thereby connecting the conductive line connecting portion 308, and the window 311 or 311' is coated with an organic insulator layer.
摘要翻译：通过在电子电路板的导线的指定或任意位置执行导线的断开或连接来改变电子电路板的方法，从而改变电路并完全改变导电线的开路图案缺陷，或绝缘体层及其装置，其中第一能量束照射到旨在连接或断开电子电路板中的导线5和5'的修复端子9和9'的部分，从而去除保护层，制造窗户并露出端子9和9'用于连接; 照射第二能量束，从而断开维修端子9和9'，或者用于连接的金属片供应到修理端子9和9'之间并向其施加能量，从而电连接它们; 并且断开或连接的窗口部分局部地涂覆有绝缘体层，从而修改电子电路板的导线。此外，窗311或311'形成在形成在耦合或导线断路部分309中的导线连接部分308上的绝缘保护层310中，导线断开部分的导线被断开或液体材料312 用于连接导线的导线被提供给导线连接部分308，金属层313通过加热液体材料312而沉淀，从而连接导线连接部分308，并且窗311或311'被涂覆有机绝缘体层。

16. 发明授权

US5208437A Method of cutting interconnection pattern with laser and apparatus thereof 失效
标题翻译：用激光切割互连图案的方法及其设备
公开(公告)号：US5208437A
公开(公告)日：1993-05-04
申请号：US697779
申请日：1991-05-09
申请人： Tateoki Miyauchi , Mikio Hongo , Shigenobu Maruyama , Katsurou Mizukoshi , Hiroshi Yamaguchi , Koyo Morita
发明人： Tateoki Miyauchi , Mikio Hongo , Shigenobu Maruyama , Katsurou Mizukoshi , Hiroshi Yamaguchi , Koyo Morita
IPC分类号： H01L21/82 , B23K26/06 , B23K26/36 , H01L23/525
CPC分类号： H01L23/5258 , B23K26/0624 , B23K26/066 , B23K2201/38 , B23K2201/40 , H01L2924/0002
摘要： In an interconnection film cutting method and apparatus therefor according to the present invention, a laser beam having a pulse width of 10.sup.-9 second or less is illuminated on a desired portion of the interconnection pattern of a semiconductor device, such as a link used for redundant operation of a defective bit in, for example, a LSI memory, or on a desired portion of the interconnection pattern of a large-scaled interconnection substrate through a transmission type liquid crystal mask in the form of a desired pattern so as to cut the interconnection pattern without damaging a layer disposed below the interconnection pattern.

17. 发明授权

US4609809A Method and apparatus for correcting delicate wiring of IC device 失效
标题翻译：用于校正IC器件精密布线的方法和装置
公开(公告)号：US4609809A
公开(公告)日：1986-09-02
申请号：US590344
申请日：1984-03-16
申请人： Hiroshi Yamaguchi , Akira Shimase , Tateoki Miyauchi , Mikio Hongo
发明人： Hiroshi Yamaguchi , Akira Shimase , Tateoki Miyauchi , Mikio Hongo
IPC分类号： H01L21/3213 , B23K15/08 , B23K17/00 , G03F1/00 , H01J37/305 , H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/66 , H01L21/768 , B23K15/00
CPC分类号： G03F1/74 , B23K15/08 , B23K17/00 , H01J37/3056 , H01J2237/08
摘要： The invention discloses a method and apparatus for correcting a device characterized in that an ion beam is extracted from an ion source having high luminance such as a liquid metal ion source or the like, the ion beam is then converged to a delicate spot by use of a charged particle optical system and apertures, a wiring portion formed on and outside of an active layer region of a device and connected to the device is located to the spot by observing the wiring portion through an SIM, the ion beam in neutralized by an electron shower so as to prevent the wiring portion from being charged electrically, the converged ion beam spot is radiated to the wiring portion to remove the wiring portion, and radiation of the ion beam is stopped while observing the ion beam by a second ion mass spectrometer which detects that the wiring portion is cut by the ion beam and the ion beam reaches an insulating layer.
摘要翻译：本发明公开了一种用于校正装置的方法和装置，其特征在于，离子束从诸如液体金属离子源等的高亮度的离子源提取，然后通过使用离子束会聚到微妙的位置带电粒子光学系统和孔，在器件的有源层区域上形成并连接到器件的布线部分通过SIM通过观察布线部分而位于该点，离子束被电子中和淋浴，以防止布线部分被电荷充电，会聚的离子束点辐射到布线部分以去除布线部分，并且通过第二离子质谱仪观察离子束来停止离子束的辐射，其中第二离子质谱仪检测出配线部分被离子束切断，离子束到达绝缘层。

18. 发明授权

US5026664A Method of providing a semiconductor IC device with an additional conduction path 失效
标题翻译：提供具有附加传导路径的半导体IC器件的方法
公开(公告)号：US5026664A
公开(公告)日：1991-06-25
申请号：US334145
申请日：1989-04-06
申请人： Mikio Hongo , Katsuro Mizukoshi , Shuzo Sano , Takashi Kamimura , Fumikazu Itoh , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi
发明人： Mikio Hongo , Katsuro Mizukoshi , Shuzo Sano , Takashi Kamimura , Fumikazu Itoh , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/52
CPC分类号： H01L21/76838 , H01L21/32051 , H01L21/76892 , Y10S148/093
摘要： A semiconductor IC device having a substrate, a patterned conductor layer for interconnection of regions in the substrate and a passivation layer covering the device is provided with an additional conduction path of a pattern and/or part of the patterned conductor layer is removed for disconnection for the purpose of evaluation of the characteristics of the device. The additional conduction path is formed by forming a hole in the passivation layer to expose a part of the conductor layer, directing, in an atmosphere containing a metal compound gas, an ion beam onto the hole and onto a predetermined portion of the passivation layer on which the additional conduction path of a pattern is to be formed to thereby form a patterned film of the metal decomposed from the metal compound gas and forming an additional conductor on the patterned film. The provision of the additional conduction path and/or the removal of part of the patterned conductor layer is preformed in a chemical vapor deposition apparatus which includes a vacuum chamber and an ion beam radiation unit having a housing partitioned into, for example, first, second and third compartments. The ion beam radiation unit has an ion source placed in the first compartment, an ion beam focusing and deflecting device placed in the second compartment and pressure buffer constituted by the third compartment. The third compartment is coupled to and pneumatically isolated from the vacuum chamber for conducting an ion beam emitted from the ion source, passing the second compartment and ejected from the second compartment to the vacuum chamber.
摘要翻译：具有衬底，用于衬底中的区域的互连的图案化导体层和覆盖该器件的钝化层的半导体IC器件被设置有去除图案和/或图案化导体层的一部分的附加传导路径用于断开评估设备特点的目的。附加传导路径是通过在钝化层中形成一个孔而露出导体层的一部分而形成的，该导体层的一部分在包含金属化合物气体的气氛中引导离子束到孔上并延伸到钝化层的预定部分上其形成图案的附加传导路径，从而形成从金属化合物气体分解的金属的图案化膜，并在图案化膜上形成附加导体。提供额外的传导路径和/或去除图案化的导体层的一部分在化学气相沉积设备中预先形成，该化学气相沉积设备包括真空室和离子束辐射单元，该单元具有被分隔成例如第一，第二和第三个隔间。离子束辐射单元具有放置在第一隔室中的离子源，放置在第二隔室中的离子束聚焦和偏转装置以及由第三隔间构成的压力缓冲器。第三隔室与真空室联接并气动隔离，用于传导从离子源发射的离子束，通过第二隔室并从第二隔室喷射到真空室。

19. 发明授权

US5182231A Method for modifying wiring of semiconductor device 失效
标题翻译：修改半导体器件布线的方法
公开(公告)号：US5182231A
公开(公告)日：1993-01-26
申请号：US528064
申请日：1990-05-23
申请人： Mikio Hongo , Katsuro Mizukoshi , Shyuzo Sano , Takashi Kamimura , Takahiko Takahashi
发明人： Mikio Hongo , Katsuro Mizukoshi , Shyuzo Sano , Takashi Kamimura , Takahiko Takahashi
IPC分类号： H01L21/768 , H01L23/525 , H01L23/532
CPC分类号： H01L23/53257 , H01L21/76892 , H01L23/5254 , H01L2924/0002
摘要： The wiring of a semiconductor device having a multilayer interconnection on a semiconductor substrate is modified. A plurality of fine holes are formed on an insulation film by the radiation of a converged energy beam to expose selected ones of the internal lines of the underlying wiring. A thin buffer film of Cr, Ti, TiN, or W is formed along a path where an additional connection line is to be deposited. The path extends along an upper surface of the insulating film at least in and between the said fine holes. The additional connection line is deposited on the buffer film by energy beam CVD, using Mo, W, or Al, to interconnect the exposed internal lines. The additional connection line is annealed by radiating an energy beam thereon to reduce its resistance. A further insulating film is deposited covering the additional connection line by energy beam CVD.
摘要翻译：在半导体衬底上具有多层互连的半导体器件的布线被改变。通过会聚能量束的辐射在绝缘膜上形成多个细孔，以暴露底层布线的选定内部线。沿着要沉积另外的连接线的路径形成Cr，Ti，TiN或W的薄缓冲膜。该路径至少在所述细孔之间和之间沿绝缘膜的上表面延伸。通过使用Mo，W或Al的能量束CVD将附加连接线沉积在缓冲膜上以互连暴露的内部线。附加连接线通过在其上辐射能量束来降低其电阻而退火。通过能量束CVD沉积覆盖附加连接线的另一绝缘膜。

20. 发明授权

US06937296B2 Flat panel display unit and method of repairing defects in its line pattern 失效
标题翻译：平板显示单元及修补其线条缺陷的方法
公开(公告)号：US06937296B2
公开(公告)日：2005-08-30
申请号：US09944866
申请日：2001-08-31
申请人： Michinobu Mizumura , Mikio Hongo , Masaaki Okunaka , Kaoru Yamada
发明人： Michinobu Mizumura , Mikio Hongo , Masaaki Okunaka , Kaoru Yamada
IPC分类号： G02F1/13 , G02F1/1333 , G02F1/1337 , G02F1/1343 , G02F1/1362 , G09F9/00 , H01L29/786
CPC分类号： G02F1/136259 , G02F2001/136263
摘要： Shorting defects between the scan lines and signal lines are repaired during the manufacture of a TFT or other flat panel display unit without causing liquid crystal orientation defects and production yield is thereby improved. In a TFT panel in which scan line 2 bifurcates where scan line 2 and signal line 3 intersect, the lines having a protective insulation film 8 therebetween, one leg of the scan line 2 bifurcation is cut by a laser 9 where a short 7 has been found between lines at the intersection, thereby electrically separating the short. An insulation film material 13 dispensed from a glass pipette 12 is then applied locally to the cut part and surrounding area and cured to form a new insulation film.
摘要翻译：在TFT或其他平板显示单元的制造期间，在扫描线和信号线之间的短路缺陷被修复，而不引起液晶取向缺陷，从而提高了生产成本。在其中扫描线2在扫描线2和信号线3相交处分叉的TFT面板中，其间具有保护绝缘膜8的线，扫描线2分支的一条腿被短路7已经被激光9切断在交叉点的线之间发现，从而电短路。然后将从玻璃吸管12分配的绝缘膜材料13局部施加到切割部分和周围区域并固化以形成新的绝缘膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式