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1. 发明授权

US5026664A Method of providing a semiconductor IC device with an additional conduction path 失效
标题翻译：提供具有附加传导路径的半导体IC器件的方法
公开(公告)号：US5026664A
公开(公告)日：1991-06-25
申请号：US334145
申请日：1989-04-06
申请人： Mikio Hongo , Katsuro Mizukoshi , Shuzo Sano , Takashi Kamimura , Fumikazu Itoh , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi
发明人： Mikio Hongo , Katsuro Mizukoshi , Shuzo Sano , Takashi Kamimura , Fumikazu Itoh , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/52
CPC分类号： H01L21/76838 , H01L21/32051 , H01L21/76892 , Y10S148/093
摘要： A semiconductor IC device having a substrate, a patterned conductor layer for interconnection of regions in the substrate and a passivation layer covering the device is provided with an additional conduction path of a pattern and/or part of the patterned conductor layer is removed for disconnection for the purpose of evaluation of the characteristics of the device. The additional conduction path is formed by forming a hole in the passivation layer to expose a part of the conductor layer, directing, in an atmosphere containing a metal compound gas, an ion beam onto the hole and onto a predetermined portion of the passivation layer on which the additional conduction path of a pattern is to be formed to thereby form a patterned film of the metal decomposed from the metal compound gas and forming an additional conductor on the patterned film. The provision of the additional conduction path and/or the removal of part of the patterned conductor layer is preformed in a chemical vapor deposition apparatus which includes a vacuum chamber and an ion beam radiation unit having a housing partitioned into, for example, first, second and third compartments. The ion beam radiation unit has an ion source placed in the first compartment, an ion beam focusing and deflecting device placed in the second compartment and pressure buffer constituted by the third compartment. The third compartment is coupled to and pneumatically isolated from the vacuum chamber for conducting an ion beam emitted from the ion source, passing the second compartment and ejected from the second compartment to the vacuum chamber.
摘要翻译：具有衬底，用于衬底中的区域的互连的图案化导体层和覆盖该器件的钝化层的半导体IC器件被设置有去除图案和/或图案化导体层的一部分的附加传导路径用于断开评估设备特点的目的。附加传导路径是通过在钝化层中形成一个孔而露出导体层的一部分而形成的，该导体层的一部分在包含金属化合物气体的气氛中引导离子束到孔上并延伸到钝化层的预定部分上其形成图案的附加传导路径，从而形成从金属化合物气体分解的金属的图案化膜，并在图案化膜上形成附加导体。提供额外的传导路径和/或去除图案化的导体层的一部分在化学气相沉积设备中预先形成，该化学气相沉积设备包括真空室和离子束辐射单元，该单元具有被分隔成例如第一，第二和第三个隔间。离子束辐射单元具有放置在第一隔室中的离子源，放置在第二隔室中的离子束聚焦和偏转装置以及由第三隔间构成的压力缓冲器。第三隔室与真空室联接并气动隔离，用于传导从离子源发射的离子束，通过第二隔室并从第二隔室喷射到真空室。

2. 发明授权

US5086015A Method of etching a semiconductor device by an ion beam 失效
标题翻译：通过离子束蚀刻半导体器件的方法
公开(公告)号：US5086015A
公开(公告)日：1992-02-04
申请号：US394364
申请日：1989-08-15
申请人： Fumikazu Itoh , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi , Mikio Hongo
发明人： Fumikazu Itoh , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi , Mikio Hongo
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/768
CPC分类号： H01L21/76802 , Y10S148/046
摘要： A method of etching a semiconductor device having multi-layered wiring by an ion beam is disclosed which method comprises the steps of: extracting a high-intensity ion beam from a high-density ion source; focusing the extracted ion beam; causing the focused ion beam to perform a scanning operation by a voltage applied to a deflection electrode; forming a first hole in the semiconductor device by the focused ion beam to a depth capable of reaching an insulating film formed between upper and lower wiring conductors so that the first hole has a curved bottom corresponding to the undulation of the upper wiring conductor, and the upper wiring conductor is absent at the bottom of the first hole; and scanning a portion of the bottom of the first hole with the focused ion beam to form a second hole in the insulating film to a depth capable of reaching the lower wiring conductor, thereby preventing the shorting between the upper and lower wiring conductors. Further, a method of forming a hole of a predetermined shape at a surface area having a step-like portion of a semiconductor device by an ion beam is disclosed which method comprises a pre-etching step of scanning the high-level region of the step-like portion with the ion beam so that the high-level region becomes equal in level to the low-level region of the step-like portion, and a main step of scanning the whole of the surface area with the ion beam till the hole of the predetermined shape is formed in the semiconductor device.
摘要翻译：公开了一种通过离子束蚀刻具有多层布线的半导体器件的方法，该方法包括以下步骤：从高密度离子源提取高强度离子束; 聚焦提取的离子束; 使聚焦离子束通过施加到偏转电极的电压进行扫描操作; 通过所述聚焦离子束在所述半导体器件中形成第一孔至能够到达形成在上部和下部布线导体之间的绝缘膜的深度，使得所述第一孔具有对应于所述上部布线导体的起伏的弯曲底部，并且上部布线导体在第一个孔的底部不存在; 并用聚焦离子束扫描第一孔的底部的一部分，以在绝缘膜中形成能够到达下布线导体的深度的第二孔，从而防止上布线导体和下布线导体之间的短路。此外，公开了一种通过离子束在具有半导体器件的阶梯状部分的表面区域形成预定形状的孔的方法，该方法包括：扫描步骤的高级区域的预蚀刻步骤具有离子束的部分，使得高级区域变得与阶梯状部分的低级区域相等，并且主要步骤是用离子束扫描整个表面积直到孔在半导体器件中形成预定形状。

3. 发明授权

US06753253B1 Method of making wiring and logic corrections on a semiconductor device by use of focused ion beams 失效
标题翻译：通过使用聚焦离子束在半导体器件上进行布线和逻辑校正的方法
公开(公告)号：US06753253B1
公开(公告)日：2004-06-22
申请号：US07584180
申请日：1990-09-18
申请人： Takahiko Takahashi , Fumikazu Itoh , Akira Shimase , Mikio Hongo , Satoshi Haraichi , Hiroshi Yamaguchi
发明人： Takahiko Takahashi , Fumikazu Itoh , Akira Shimase , Mikio Hongo , Satoshi Haraichi , Hiroshi Yamaguchi
IPC分类号： H01L2144
CPC分类号： H01L23/544 , H01J37/304 , H01J37/3056 , H01J2237/30466 , H01J2237/31749 , H01L21/32051 , H01L21/768 , H01L21/76879 , H01L21/76888 , H01L21/76892 , H01L21/76894 , H01L22/22 , H01L23/525 , H01L23/5254 , H01L23/552 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/45 , H01L2223/5442 , H01L2223/54426 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05027 , H01L2224/05554 , H01L2224/05572 , H01L2224/11 , H01L2224/1147 , H01L2224/13 , H01L2224/13099 , H01L2224/13111 , H01L2224/16225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48463 , H01L2224/73204 , H01L2224/73253 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01009 , H01L2924/01011 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/0105 , H01L2924/01057 , H01L2924/01065 , H01L2924/01068 , H01L2924/01072 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/12036 , H01L2924/1204 , H01L2924/12044 , H01L2924/1305 , H01L2924/14 , H01L2924/15312 , H01L2924/181 , H01L2924/19043 , H01L2924/30105 , H01L2924/3025 , Y10S438/94 , H01L2924/00014 , H01L2924/00 , H01L2224/05552 , H01L2924/00012
摘要： Herein disclosed are a variety of techniques relating to the wiring and logic corrections on a chip by making use of the focused ion beam (which is shortly referred to as “FIB”) or the laser selection metal CVD. The time periods for the wiring corrections and for debugging and developing an electronic system are shortened by making use of the processing characteristics of the FIB. Illustratively, a hole is bored in an insulating film above a portion of a wiring which is to be connected to another wiring by means of a focused ion beam. The inside of the hole and a predetermined region on the insulating film are irradiated with either a laser beam or an ion beam in a metal compound gas to deposit metal in the hole and on said region and a connecting wiring is formed by means of optically pumped CVD. The present invention also relates to an IC or VLSI structure having a trial cutting region, at test etching region and an auxiliary wiring or pad, suitable for the application of such defect correction and circuit change, as well as a method of making same, a designing method using such technique, and a focused ion beam system and other systems for use in those methods.
摘要翻译：这里公开了通过利用聚焦离子束（其被简称为“FIB”）或激光选择金属CVD与芯片上的布线和逻辑校正有关的各种技术。通过利用FIB的处理特性，缩短布线校正和调试开发电子系统的时间。示例性地，在通过聚焦离子束连接到另一布线的布线的一部分上方的绝缘膜中钻孔。在绝缘膜的内部和绝缘膜上的预定区域用金属化合物气体中的激光束或离子束照射以在孔中和所述区域上沉积金属，并且通过光泵浦形成连接布线 CVD。本发明还涉及一种IC或VLSI结构，其具有在测试蚀刻区域处的试验切割区域和适于应用这种缺陷校正和电路改变的辅助布线或焊盘，以及其制造方法使用这种技术的设计方法，以及用于这些方法的聚焦离子束系统和其它系统。

4. 发明授权

US5497034A IC wiring connecting method and apparatus 失效
公开(公告)号：US5497034A
公开(公告)日：1996-03-05
申请号：US318267
申请日：1994-10-05
申请人： Hiroshi Yamaguchi , Mikio Hongo , Tateoki Miyauchi , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi , Keiya Saito
发明人： Hiroshi Yamaguchi , Mikio Hongo , Tateoki Miyauchi , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi , Keiya Saito
IPC分类号： B21C27/00 , H01L21/00 , H01L21/3205 , H01L21/44 , H01L21/768 , H01L23/48 , H01L23/52 , H05K3/00 , H05K3/40 , H01L29/46
CPC分类号： H01L21/76879 , H01J37/3056 , H01L21/32051 , H01L21/67138 , H01L21/76892 , H05K3/0017 , H05K3/4076 , Y10S428/901 , Y10S438/94 , Y10S438/961 , Y10T428/12361 , Y10T428/31678
摘要： An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.

5. 发明授权

US4868068A IC wiring connecting method and resulting article 失效
标题翻译： IC接线方式及其结果
公开(公告)号：US4868068A
公开(公告)日：1989-09-19
申请号：US32753
申请日：1987-03-31
申请人： Hiroshi Yamaguchi , Mikio Hongo , Tateoki Miyauchi , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi , Keiya Saito
发明人： Hiroshi Yamaguchi , Mikio Hongo , Tateoki Miyauchi , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi , Keiya Saito
IPC分类号： B21C27/00 , H01L21/00 , H01L21/3205 , H01L21/44 , H01L21/768 , H01L23/48 , H01L23/52 , H05K3/00 , H05K3/40
CPC分类号： H01L21/76879 , H01J37/3056 , H01L21/32051 , H01L21/67138 , H01L21/76892 , H05K3/0017 , H05K3/4076 , Y10S428/901 , Y10S438/94 , Y10S438/961 , Y10T428/12361 , Y10T428/31678
摘要： A IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.
摘要翻译：一种用于互连用于校正布线的IC芯片的相同布线面的导线的IC布线连接方法，用于将相同位置处的多层IC芯片的不同布线通道的导线相互连接，或用于连接下层导体线多层IC芯片的布线平面形成在同一多层IC芯片上的分离位置上的导线。覆盖要互连的导电线的绝缘膜或膜由诸如浓缩离子束的能量束进行处理，以形成孔，以便露出导线与互连的相应部分，然后金属为通过在气态有机金属化合物的气氛中通过能量束或浓缩离子束照射孔和区域的表面而沉积在孔的表面上的区域和互连孔的区域，以形成导电金属膜，导线。还提供了一种用于执行IC布线连接方法的装置，其包括作为主要组成部分的离子束材料处理系统，诸如激光诱导CVD单元的绝缘膜形成系统，导电膜形成系统和绝缘体电影蚀刻系统。

6. 发明授权

US5824598A IC wiring connecting method using focused energy beams 失效
标题翻译： IC接线方式采用聚焦能量束
公开(公告)号：US5824598A
公开(公告)日：1998-10-20
申请号：US561310
申请日：1995-11-21
申请人： Hiroshi Yamaguchi , Mikio Hongo , Tateoki Miyauchi , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi , Keiya Saito
发明人： Hiroshi Yamaguchi , Mikio Hongo , Tateoki Miyauchi , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi , Keiya Saito
IPC分类号： B21C27/00 , H01L21/00 , H01L21/3205 , H01L21/44 , H01L21/768 , H01L23/48 , H01L23/52 , H05K3/00 , H05K3/40
CPC分类号： H01L21/76879 , H01J37/3056 , H01L21/32051 , H01L21/67138 , H01L21/76892 , H05K3/0017 , H05K3/4076 , Y10S428/901 , Y10S438/94 , Y10S438/961 , Y10T428/12361 , Y10T428/31678
摘要： An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.
摘要翻译：一种用于互连用于校正布线的IC芯片的相同布线面的导线的IC布线连接方法，用于将相同位置处的多层IC芯片的不同布线通道的导线相互连接，或用于连接下层导体线多层IC芯片的布线平面形成在同一多层IC芯片上的分离位置上的导线。覆盖要互连的导电线的绝缘膜或膜由诸如浓缩离子束的能量束进行处理，以形成孔，以便露出导线与互连的相应部分，然后金属为通过在气态有机金属化合物的气氛中通过能量束或浓缩离子束照射孔和区域的表面而在孔的表面上沉积的区域和互连孔的区域，以形成将导电金属膜电连接导线。还提供了一种用于执行IC布线连接方法的装置，其包括作为主要组成部分的离子束材料处理系统，诸如激光诱导CVD单元的绝缘膜形成系统，导电膜形成系统和绝缘体电影蚀刻系统。

7. 发明授权

US5472507A IC wiring connecting method and apparatus 失效
标题翻译： IC接线方法和装置
公开(公告)号：US5472507A
公开(公告)日：1995-12-05
申请号：US238888
申请日：1994-05-06
申请人： Hiroshi Yamaguchi , Mikio Hongo , Tateoki Miyauchi , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi , Keiya Saito
发明人： Hiroshi Yamaguchi , Mikio Hongo , Tateoki Miyauchi , Akira Shimase , Satoshi Haraichi , Takahiko Takahashi , Keiya Saito
IPC分类号： B21C27/00 , H01L21/00 , H01L21/3205 , H01L21/44 , H01L21/768 , H01L23/48 , H01L23/52 , H05K3/00 , H05K3/40 , C23C16/00
CPC分类号： H01L21/76879 , H01J37/3056 , H01L21/32051 , H01L21/67138 , H01L21/76892 , H05K3/0017 , H05K3/4076 , Y10S428/901 , Y10S438/94 , Y10S438/961 , Y10T428/12361 , Y10T428/31678
摘要： An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines. Also provided is an apparatus for carrying out the IC wiring connecting method, which comprises, as essential components, an ion beam material processing system, an insulating film forming system such as a laser induced CVD unit, a conductive film forming system, and an insulating film etching system.
摘要翻译：一种用于互连用于校正布线的IC芯片的相同布线面的导线的IC布线连接方法，用于将相同位置处的多层IC芯片的不同布线通道的导线相互连接，或用于连接下层导体线多层IC芯片的布线平面形成在同一多层IC芯片上的分离位置上的导线。覆盖要互连的导电线的绝缘膜或膜由诸如浓缩离子束的能量束进行处理，以形成孔，以便露出导线与互连的相应部分，然后金属为通过在气态有机金属化合物的气氛中通过能量束或浓缩离子束照射孔和区域的表面而在孔的表面上沉积的区域和互连孔的区域，以形成将导电金属膜电连接导线。还提供了一种用于执行IC布线连接方法的装置，其包括作为主要组成部分的离子束材料处理系统，诸如激光诱导CVD单元的绝缘膜形成系统，导电膜形成系统和绝缘体电影蚀刻系统。

8. 发明授权

US4900695A Semiconductor integrated circuit device and process for producing the same 失效
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US4900695A
公开(公告)日：1990-02-13
申请号：US134460
申请日：1987-12-17
申请人： Takahiko Takahashi , Funikazu Itoh , Akira Shimase , HIroshi Yamaguchi , Mikio Hongo , Satoshi Haraichi
发明人： Takahiko Takahashi , Funikazu Itoh , Akira Shimase , HIroshi Yamaguchi , Mikio Hongo , Satoshi Haraichi
IPC分类号： H01L21/66 , H01L21/768 , H01L23/525
CPC分类号： H01L22/22 , H01L21/768 , H01L21/76879 , H01L21/76888 , H01L21/76892 , H01L21/76894 , H01L23/5254 , H01L2924/0002 , H01L2924/14 , Y10S438/94
摘要： The present invention relates to a semiconductor integrated circuit device and a process for producing the same. A hole is bored in an insulating film above a portion of a wiring which is to be connected to another wiring by means of a focused ion beam. The inside of the hole and a predetermined region on the insulating film are irradiated with either a laser beam or an ion beam in a metal compound gas to deposit metal in the hole and on said region and a connecting wiring is formed by means of optically pumped CVD. To electrically connect upper- and lower-level wirings in a multilayer wiring structure by a connecting wiring, the connecting wiring is electrically isolated from an intermediate-level wiring through which it extends. The above-described arrangement enables provision of a hole with a focused ion beam and formation of a metal wiring on a selective region by means, for example, optically pumped CVD. Accordingly, it is possible to effect fine machining and electrically connect together wirings inside an LSI after the completion thereof. It is therefore possible to carry out debugging, repair and a defect analysis of the LSI.
摘要翻译：半导体集成电路装置及其制造方法技术领域本发明涉及半导体集成电路装置及其制造方法。在通过聚焦离子束连接到另一布线的布线的一部分上方的绝缘膜中钻孔。在绝缘膜的内部和绝缘膜上的预定区域用金属化合物气体中的激光束或离子束照射以在孔中和所述区域上沉积金属，并且通过光泵浦形成连接布线 CVD。为了通过连接布线将多层布线结构中的上下布线电连接，连接布线与其延伸的中间布线电隔离。上述布置可以通过例如光泵浦CVD在选择区域上提供具有聚焦离子束的孔和形成金属布线。因此，可以在完成LSI之后实现精细加工并将LSI内的布线电连接在一起。因此，可以进行LSI的调试，修理和缺陷分析。

9. 发明授权

US5182231A Method for modifying wiring of semiconductor device 失效
标题翻译：修改半导体器件布线的方法
公开(公告)号：US5182231A
公开(公告)日：1993-01-26
申请号：US528064
申请日：1990-05-23
申请人： Mikio Hongo , Katsuro Mizukoshi , Shyuzo Sano , Takashi Kamimura , Takahiko Takahashi
发明人： Mikio Hongo , Katsuro Mizukoshi , Shyuzo Sano , Takashi Kamimura , Takahiko Takahashi
IPC分类号： H01L21/768 , H01L23/525 , H01L23/532
CPC分类号： H01L23/53257 , H01L21/76892 , H01L23/5254 , H01L2924/0002
摘要： The wiring of a semiconductor device having a multilayer interconnection on a semiconductor substrate is modified. A plurality of fine holes are formed on an insulation film by the radiation of a converged energy beam to expose selected ones of the internal lines of the underlying wiring. A thin buffer film of Cr, Ti, TiN, or W is formed along a path where an additional connection line is to be deposited. The path extends along an upper surface of the insulating film at least in and between the said fine holes. The additional connection line is deposited on the buffer film by energy beam CVD, using Mo, W, or Al, to interconnect the exposed internal lines. The additional connection line is annealed by radiating an energy beam thereon to reduce its resistance. A further insulating film is deposited covering the additional connection line by energy beam CVD.
摘要翻译：在半导体衬底上具有多层互连的半导体器件的布线被改变。通过会聚能量束的辐射在绝缘膜上形成多个细孔，以暴露底层布线的选定内部线。沿着要沉积另外的连接线的路径形成Cr，Ti，TiN或W的薄缓冲膜。该路径至少在所述细孔之间和之间沿绝缘膜的上表面延伸。通过使用Mo，W或Al的能量束CVD将附加连接线沉积在缓冲膜上以互连暴露的内部线。附加连接线通过在其上辐射能量束来降低其电阻而退火。通过能量束CVD沉积覆盖附加连接线的另一绝缘膜。

10. 发明授权

US4687939A Method and apparatus for forming film by ion beam 失效
标题翻译：用离子束形成薄膜的方法和装置
公开(公告)号：US4687939A
公开(公告)日：1987-08-18
申请号：US668843
申请日：1984-11-06
申请人： Tateoki Miyauchi , Hiroshi Yamaguchi , Mikio Hongo , Katsuro Mizukoshi , Akira Shimase , Ryohei Satoh
发明人： Tateoki Miyauchi , Hiroshi Yamaguchi , Mikio Hongo , Katsuro Mizukoshi , Akira Shimase , Ryohei Satoh
IPC分类号： C23C14/48 , C23C14/22 , H01J37/305 , H01J37/317 , H01J37/00
CPC分类号： H01J37/3056 , C23C14/221 , H01J37/3178 , H01J2237/31749
摘要： An ion beam apparatus which comprises an enclosure defining a chamber of high vacuum. A crucible for producing vapor of a material, ionizing means, ion accelerating means, and a substrate to be deposited with the vaporized material to thereby form a film thereon are disposed within the chamber. An accelerating voltage is applied across the crucible and the accelerating means such that the crucible is of positive polarity while the accelerating means is of negative polarity. The material contained in the crucible is vaporized by heating. A pressure difference is maintained between the vapor pressure within the crucible and the vacuum chamber. The crucible is provided with a small hole for ejecting the vapor of the material into the vacuum chamber to thereby form atom clouds referred to as clusters under adiabatic expansion and supercooling, a part of the clusters being ionized through irradiation of electrons by the ionizing means and accelerated by the accelerating means so that the ionized and accelerated clusters deposit on the substrate to form a thin film thereon. The apparatus further comprises electrostatic optical system interposed between the cluster ionizing region and the substrate to be deposited with the ionized clusters, wherein the electrostatic optical system serves to focus the ionized clusters onto the element to form the thin film thereon through deposition of the ionized clusters.
摘要翻译：一种离子束装置，其包括限定高真空室的外壳。用于产生材料的蒸气的坩埚，离子化装置，离子加速装置以及待蒸发的材料沉积以形成其上的膜的基板设置在室内。在坩埚和加速装置之间施加加速电压，使得坩埚具有正极性，而加速装置是负极性的。包含在坩埚中的材料通过加热而蒸发。在坩埚内的蒸汽压力与真空室之间保持压力差。该坩埚设置有用于将材料的蒸气喷射到真空室中的小孔，从而在绝热膨胀和过冷却下形成称为簇的原子云，通过电离装置照射电子而使部分簇离子化; 通过加速装置加速，使得电离和加速的团簇沉积在基底上以在其上形成薄膜。该装置还包括插入群集电离区域和要沉积离子簇的基板之间的静电光学系统，其中静电光学系统用于将离子化的聚集体聚集到元件上以通过沉积离子簇而在其上形成薄膜。

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