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11. 发明授权

US07072531B2 Gain-assisted electroabsorption modulators 有权
标题翻译：增益辅助电吸收调节剂
公开(公告)号：US07072531B2
公开(公告)日：2006-07-04
申请号：US10944372
申请日：2004-09-16
申请人： Kostadin D. Djordjev , Michael R. T. Tan , Chao-Kun Lin , Scott W. Corzine
发明人： Kostadin D. Djordjev , Michael R. T. Tan , Chao-Kun Lin , Scott W. Corzine
IPC分类号： G02F1/17 , G02F1/035
CPC分类号： G02B6/12007 , G02B2006/12078 , G02B2006/12126 , G02B2006/12142
摘要： A light modulator having a waveguide and a resonator is disclosed. The waveguide routes light of wavelength λ past the resonator. The resonator is coupled to the waveguide such that a portion of the light is input to the resonator, the resonator having a resonance at λ. The resonator includes a gain region in which light of wavelength λ is amplified and an absorption region in which light of wavelength λ is absorbed, the absorption region having first and second states, the first state absorbing less light of wavelength λ than the second state, the state of the absorption region is determined by an electrical signal coupled to the absorption region. The gain region provides a gain that compensates for the light absorption in the first state. In one embodiment, the waveguide and resonator are critically coupled when the absorption region is in the second state.
摘要翻译：公开了一种具有波导和谐振器的光调制器。波导将波长λ的光通过谐振器。谐振器耦合到波导，使得一部分光被输入到谐振器，谐振器具有λ的共振。谐振器包括其中放大波长λ的光的增益区域和吸收波长λ的光的吸收区域，具有第一和第二状态的吸收区域，吸收比第二状态更少的波长λ的光的第一状态，吸收区域的状态由耦合到吸收区域的电信号决定。增益区域提供补偿第一状态下的光吸收的增益。在一个实施例中，当吸收区域处于第二状态时，波导和谐振器被严格耦合。

12. 发明授权

US5896408A Near planar native-oxide VCSEL devices and arrays using converging oxide ringlets 失效
标题翻译：近平面自然氧化物VCSEL器件和使用会聚氧化物小环的阵列
公开(公告)号：US5896408A
公开(公告)日：1999-04-20
申请号：US911708
申请日：1997-08-15
申请人： Scott W. Corzine , Richard P. Schneider, Jr. , Michael R. T. Tan
发明人： Scott W. Corzine , Richard P. Schneider, Jr. , Michael R. T. Tan
IPC分类号： H01S5/00 , H01S5/183 , H01S5/42 , H01S3/19 , H01L21/20 , H01S3/08
CPC分类号： H01S5/18313 , H01S5/2086 , H01S5/423
摘要： A VCSEL with a near planar top surface on which the top electrode is deposited. A VCSEL according to the present invention includes a top electrode, a top mirror having a top surface, a light generation region, and a bottom mirror for reflecting light toward the top mirror. At least one of the mirrors includes a plurality of planar electrically conducting layers having different indices of refraction. In addition, at least one of the layers includes an oxidizable material. To expose this layer to an oxidizing agent (thereby converting the material to an electrical insulator), three or more holes are etched down from the top surface of the VCSEL to the layer containing the oxidizable material. The oxidizing agent is then introduced into the top of these holes. The partial oxidation of the layer converts the layer to one having a conducting region surrounded by an electrically insulating region, the conducting region being positioned under the top electrode.
摘要翻译：具有近平面顶表面的VCSEL，其上沉积有顶电极。根据本发明的VCSEL包括顶电极，具有顶表面的上反射镜，光产生区域和用于向上反射镜反射光的底镜。至少一个反射镜包括具有不同折射率的多个平面导电层。此外，至少一层包括可氧化材料。为了将该层暴露于氧化剂（从而将材料转化为电绝缘体），从VCSEL的顶表面向包含可氧化材料的层蚀刻三个或更多个孔。然后将氧化剂引入这些孔的顶部。该层的部分氧化将该层转变为具有由电绝缘区域包围的导电区域的层，该导电区域位于顶部电极之下。

13. 发明授权

US5771254A Integrated controlled intensity laser-based light source 失效
标题翻译：集成控制强度激光光源
公开(公告)号：US5771254A
公开(公告)日：1998-06-23
申请号：US660230
申请日：1996-06-03
申请人： Richard R. Baldwin , Scott W. Corzine , John P. Ertel , William D. Holland , Leif Eric Larson , David M. Sears , Michael R. T. Tan , Shih-Yuan Wang , Albert T. Yuen , Tao Zhang
发明人： Richard R. Baldwin , Scott W. Corzine , John P. Ertel , William D. Holland , Leif Eric Larson , David M. Sears , Michael R. T. Tan , Shih-Yuan Wang , Albert T. Yuen , Tao Zhang
IPC分类号： H01S3/102 , H01S5/022 , H01S5/026 , H01S5/06 , H01S5/183 , H01S3/10
CPC分类号： H01S5/02296 , H01S5/02288 , H01S5/02212 , H01S5/02228 , H01S5/02284 , H01S5/02292 , H01S5/026 , H01S5/0264 , H01S5/0683 , H01S5/183 , H01S5/423
摘要： An integrated laser-based light source that generates an output light beam having a controlled intensity. The light source comprises a package in which are mounted a laser, a light sensor and a coupler. The laser has one and only one light-emitting face from which a light beam is radiated as a radiated light beam. The light sensor generates an electrical signal representing the intensity of light energy falling it. The coupler couples a fraction of the radiated light beam to the light sensor, and provides the remainder of the radiated light beam as the output light beam. Since the light coupled to the light sensor by the coupler is a fraction of the radiated light beam, the electrical signal generated by the light sensor also represents the intensities of the radiated light beam and of the output light beam. A suitable control circuit, when fed with the electrical signal generated by the light sensor, can control the laser current to hold the electrical signal generated by the light sensor to a predetermined value that corresponds to the output light beam having a predetermined intensity.
摘要翻译：一种集成的基于激光的光源，其产生具有受控强度的输出光束。光源包括其中安装有激光器，光传感器和耦合器的封装。激光器具有一个且仅一个发光面，光束从该发光面照射为辐射光束。光传感器产生表示落在其上的光能强度的电信号。耦合器将辐射光束的一部分耦合到光传感器，并且将辐射光束的其余部分提供为输出光束。由于通过耦合器耦合到光传感器的光是辐射光束的一部分，所以由光传感器产生的电信号也表示辐射光束和输出光束的强度。合适的控制电路当馈送由光传感器产生的电信号时，可以控制激光电流以将由光传感器产生的电信号保持在与具有预定强度的输出光束对应的预定值。

14. 发明授权

US5727014A Vertical-cavity surface-emitting laser generating light with a defined direction of polarization 失效
标题翻译：垂直腔表面发射激光产生具有确定的极化方向的光
公开(公告)号：US5727014A
公开(公告)日：1998-03-10
申请号：US551302
申请日：1995-10-31
申请人： Shih-Yuan Wang , Michael R. T. Tan , William D. Holland , John P. Ertel , Scott W. Corzine
发明人： Shih-Yuan Wang , Michael R. T. Tan , William D. Holland , John P. Ertel , Scott W. Corzine
IPC分类号： H01S5/00 , H01S5/183 , H01S5/30 , H01S5/42 , H01S3/19
CPC分类号： H01S5/18355 , H01S5/18308 , H01S5/18338 , H01S5/18394 , H01S5/3054 , H01S5/3095 , H01S5/423
摘要： A vertical-cavity surface-emitting laser that generates light having a fixed direction of polarization. The laser has a plane light-generating region sandwiched between a first conductive mirror region and a second conductive mirror region. The first conductive mirror region has an opposite conductivity mode from the second conductive mirror region. The first conductive mirror region has a remote surface substantially parallel to the light-generating region and an electrode formed on the remote surface. The electrode bounds a light emission port from which the light is emitted in a direction defining an axis. A reduced-conductivity region is formed in the first conductive mirror region surrounding the axis and extending from the remote surface towards the light-emitting region to define a core region in the first conductive mirror region. The light emission port and/or the core region has first and second dimensions in orthogonal directions in a plane parallel to the light-generating region. The first dimension is greater than the second dimension to set the direction of polarization of the light to the direction of the first dimension.
摘要翻译：产生具有固定的偏振方向的光的垂直腔表面发射激光器。激光器具有夹在第一导电镜区域和第二导电镜面区域之间的平面发光区域。第一导电镜区域具有与第二导电镜区域相反的导电模式。第一导电镜区域具有基本上平行于发光区域的远程表面和形成在远程表面上的电极。电极在限定轴线的方向上限定发光的发光口。导电区域形成在围绕轴线的第一导电反射镜区域中，并从远程表面朝向发光区域延伸以在第一导电反射镜区域中限定芯区域。发光端口和/或芯区域在与发光区域平行的平面中具有正交方向上的第一和第二尺寸。第一尺寸大于第二尺寸以将光的偏振方向设置为第一尺寸的方向。

15. 发明授权

US06765238B2 Material systems for semiconductor tunnel-junction structures 失效
标题翻译：半导体隧道结结构材料系统
公开(公告)号：US06765238B2
公开(公告)日：2004-07-20
申请号：US10243520
申请日：2002-09-12
申请人： Yin-Lan Chang , Ashish Tandon , Michael H. Leary , Michael R. T. Tan
发明人： Yin-Lan Chang , Ashish Tandon , Michael H. Leary , Michael R. T. Tan
IPC分类号： H01L2988
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/18308 , H01S5/18313 , H01S5/3095 , H01S5/32366 , H01S5/34306 , Y10S257/918
摘要： The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor materials includes gallium (Ga), arsenic (As) and either nitrogen (N) or antimony (Sb). The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer.
摘要翻译：隧道结结构包括第一半导体材料的p型隧道结层，第二半导体材料的n型隧道结层和隧道结层之间的隧道结。至少一种半导体材料包括镓（Ga），砷（As）和氮（N）或锑（Sb）。通过形成隧道结结构的隧道结结构，隧道结的电压降明显增加，并且通过形成具有p型隧道结层的材料的价带能量与 n型隧道结层的导带能量。

16. 发明授权

US6069908A N-drive or P-drive VCSEL array 失效
标题翻译： N驱动或P驱动VCSEL阵列
公开(公告)号：US6069908A
公开(公告)日：2000-05-30
申请号：US20724
申请日：1998-02-09
申请人： Albert T. Yuen , Michael R. T. Tan , Chun Lei
发明人： Albert T. Yuen , Michael R. T. Tan , Chun Lei
IPC分类号： H01S5/00 , H01S5/02 , H01S5/042 , H01S5/183 , H01S5/187 , H01S5/42 , H01S3/19
CPC分类号： H01S5/183 , H01S5/423 , H01S5/0208 , H01S5/0422
摘要： A VCSEL that is adapted to the fabrication of an array of VCSELs. A VCSEL array according to the present invention includes first and second VCSELs for generating light of a predetermined wavelength. Each VCSEL includes a bottom reflector comprising an epitaxial layer of a semiconductor of a first conductivity type, a light generation region and a top reflector comprising a semiconductor of a second conductivity type. A bottom electrode is electrically connected to the bottom reflector, and a top electrode is electrically connected to the top reflector. The bottom electrode is grown on top of a buffer layer having an electrical conductivity less than a predetermined value and a crystalline structure that permits epitaxial growth of the bottom reflector on the buffer layer. The buffer layer may be grown on top of a substrate or be the substrate itself in the case in which a substrate having sufficiently low conductivity is utilized. The bottom reflector of each of the VCSELs is in contact with the top of the buffer layer. The first and second VCSELs are electrically isolated from one another by a trench extending into the buffer layer. The buffer layer is constructed from a material having resistivity that is sufficiently low to prevent cross-talk between the first and second VCSELs.
摘要翻译：适用于制造VCSEL阵列的VCSEL。根据本发明的VCSEL阵列包括用于产生预定波长的光的第一和第二VCSEL。每个VCSEL包括底部反射器，其包括第一导电类型的半导体的外延层，发光区域和包括第二导电类型的半导体的顶部反射器。底部电极电连接到底部反射器，并且顶部电极电连接到顶部反射器。底部电极生长在具有小于预定值的电导率的缓冲层的顶部上，并且允许底部反射器在缓冲层上外延生长的晶体结构。在使用具有足够低的导电性的基板的情况下，可以在衬底的顶部生长缓冲层或者作为衬底本身。每个VCSEL的底部反射器与缓冲层的顶部接触。第一和第二VCSEL通过延伸到缓冲层中的沟槽彼此电隔离。缓冲层由具有足够低的电阻率的材料构成，以防止第一和第二VCSEL之间的串扰。

17. 发明授权

US5892787A N-drive, p-common light-emitting devices fabricated on an n-type substrate and method of making same 失效
标题翻译：在n型衬底上制造的N驱动p普通发光器件及其制造方法
公开(公告)号：US5892787A
公开(公告)日：1999-04-06
申请号：US635838
申请日：1996-04-22
申请人： Michael R. T. Tan , Albert T. Yuen , Shih-Yuan Wang , Ghulam Hasnain , Yu-Min Houng
发明人： Michael R. T. Tan , Albert T. Yuen , Shih-Yuan Wang , Ghulam Hasnain , Yu-Min Houng
IPC分类号： H01S5/00 , H01L33/00 , H01L33/30 , H01S5/042 , H01S5/183 , H01S5/30 , H01S5/42 , H01S3/19
CPC分类号： H01L33/30 , H01L33/0016 , H01L33/0062 , H01S5/18308 , H01S5/0207 , H01S5/0421 , H01S5/18305 , H01S5/2059 , H01S5/2063 , H01S5/3054 , H01S5/3095 , H01S5/423
摘要： A substantially n-type substrate structure having a p-type surface for use in semiconductor devices as a substitute for a p-type semiconductor substrate. The substrate structure comprises a substrate region and a buffer region. The substrate region is a region of n-type compound semiconductor, and includes a degeneratively n-doped portion adjacent its first surface. The buffer region is a region of compound semiconductor doped with a p-type dopant. The buffer region is located on the first surface of the substrate region and includes a surface remote from the substrate region that provides the p-type surface of the substrate structure. The buffer region also includes a degeneratively p-doped portion adjacent the degeneratively n-doped portion of the substrate region. The substrate structure includes a tunnel junction between the degeneratively n-doped portion of the substrate region and the degeneratively p-doped portion of the buffer region. The substrate structure is made by degeneratively doping a substrate region of n-type compound semiconductor material adjacent its first surface with an n-type impurity, and depositing a layer of compound semiconductor material doped with a p-type impurity on the first surface of the substrate region to form a buffer region that includes a surface remote from the substrate region. In the course of depositing the compound semiconductor material to form the buffer region, the compound semiconductor material is degeneratively doped with the p-type impurity at least in a portion adjacent the substrate region to form a tunnel junction between the substrate region and the buffer region.
摘要翻译：具有用于半导体器件的p型表面作为p型半导体衬底的替代物的基本为n型衬底结构。衬底结构包括衬底区域和缓冲区域。衬底区域是n型化合物半导体的区域，并且包括与其第一表面相邻的退化的n-掺杂部分。缓冲区是掺杂有p型掺杂剂的化合物半导体的区域。缓冲区域位于衬底区域的第一表面上并且包括远离衬底区域的表面，该表面提供衬底结构的p型表面。缓冲区还包括与衬底区域的退化的n掺杂部分相邻的退化的p掺杂部分。衬底结构包括在衬底区域的退化的n掺杂部分和缓冲区域的退化的p掺杂部分之间的隧道结。衬底结构是通过用n型杂质将邻近其第一表面的n型化合物半导体材料的衬底区域简单地掺杂制成的，并且在第一表面上沉积掺杂有p型杂质的化合物半导体材料层衬底区域以形成包括远离衬底区域的表面的缓冲区域。在沉积化合物半导体材料以形成缓冲区的过程中，化合物半导体材料至少在与衬底区域相邻的部分中被p型杂质退变掺杂以在衬底区域和缓冲区域之间形成隧道结。

18. 发明授权

US5266503A Method of making a surface emitting laser with oxygen ion implants followed by epitaxial regrowth 失效
标题翻译：用氧离子注入制造表面发射激光，然后进行外延再生的方法
公开(公告)号：US5266503A
公开(公告)日：1993-11-30
申请号：US771069
申请日：1991-10-02
申请人： Shih-Yuan Wang , Michael R. T. Tan
发明人： Shih-Yuan Wang , Michael R. T. Tan
IPC分类号： H01L21/76 , H01L33/00 , H01S5/183 , H01S5/20 , H01S5/223 , H01S5/24 , H01S5/343
CPC分类号： B82Y20/00 , H01L21/7605 , H01L33/0062 , H01S5/0207 , H01S5/18308 , H01S5/18305 , H01S5/2063 , H01S5/2234 , H01S5/24 , H01S5/3432 , Y10S148/095
摘要： A surface emitting laser diode device is disclosed where an active layer is implanted with oxygen ions except for a small active region. The active region includes a pn junction for generating radiation in response to passage of electrical current therethrough. After the oxygen implantation, mirror layers are grown on top of the active layer to reflect light generated in the active region back into the active region to induce more radiation emission. Mirror layers are also provided underneath the active region for the same purpose. Contact layers are provided on the top and bottom of the structure just described so that when an electrical potential is applied between the two contacts, electrical current will flow between the contacts between the active region for generating radiation. The oxygen-implanted isolation region surrounds the active region in order to confine current flow to the active region.
摘要翻译：公开了一种表面发射激光二极管器件，其中除了小的有源区域之外，用氧离子注入有源层。有源区包括用于响应电流通过其中的辐射而产生辐射的pn结。在氧注入之后，镜层生长在有源层的顶部上，以将在有源区中产生的光反射回有源区，以引起更多的辐射发射。为了相同的目的，镜面层也设置在活动区域的下方。接触层设置在刚刚描述的结构的顶部和底部，使得当在两个触点之间施加电势时，电流将在用于产生辐射的有源区域之间的触点之间流动。氧注入的隔离区围绕有源区域，以限制电流流向有源区。

19. 发明授权

US09263637B2 Plasmonic light emitting diode 有权
标题翻译：等离子体发光二极管
公开(公告)号：US09263637B2
公开(公告)日：2016-02-16
申请号：US13145995
申请日：2009-01-30
申请人： Michael R. T. Tan , David A. Fattal , Marco Fiorentino , Shih-Yuan Wang
发明人： Michael R. T. Tan , David A. Fattal , Marco Fiorentino , Shih-Yuan Wang
IPC分类号： H01L33/00 , H01L33/20 , H01L33/02 , H01L33/04 , H01L33/38
CPC分类号： H01L33/06 , H01L33/0062 , H01L33/02 , H01L33/04 , H01L33/20 , H01L33/30 , H01L33/387 , H01L33/40 , H01L2933/0016
摘要： A light emitting diode (100 or 150) includes a diode structure containing a quantum well (120), an enhancement layer (142), and a barrier layer (144 or 148) between the enhancement layer (142) and the quantum well (120). The enhancement layer (142) supports plasmon oscillations at a frequency that couples to photons produced by combination of electrons and holes in the quantum well (120). The barrier layer serves to block diffusion between the enhancement layer (142) and the diode structure.
摘要翻译：发光二极管（100或150）包括在增强层（142）和量子阱（120）之间包含量子阱（120），增强层（142）和阻挡层（144或148）的二极管结构）。增强层（142）以耦合到量子阱（120）中的电子和空穴的组合产生的光子的频率来支持等离子体振荡。阻挡层用于阻止增强层（142）和二极管结构之间的扩散。

20. 发明授权

US07372886B2 High thermal conductivity vertical cavity surface emitting laser (VCSEL) 有权
标题翻译：高导热性垂直腔表面发射激光器（VCSEL）
公开(公告)号：US07372886B2
公开(公告)日：2008-05-13
申请号：US10862753
申请日：2004-06-07
申请人： Yoon K. Song , Michael H. Leary , Michael R. T. Tan
发明人： Yoon K. Song , Michael H. Leary , Michael R. T. Tan
IPC分类号： H01S5/00 , H01S3/04 , H01S3/08
CPC分类号： H01S5/02461 , H01S5/0425 , H01S5/18308 , H01S5/18327
摘要： A light generating device such as a VCSEL includes a light generation layer, a top reflector, a bottom reflector, and a high thermal conductivity (HTC) layer between the light generation layer and the bottom reflector. The light generation layer is adapted to generate light having a first wavelength. Heat produced at the light generation layer is more efficiently dissipated due to the presence of the HTC layer. Alternatively, a light generating device such as a VCSEL includes a light generation layer, a top reflector, and a high thermal conductivity (HTC) bottom reflector. Heat produced at the light generation layer is more efficiently dissipated due to the fact that the bottom reflector is a HTC DBR reflector having lower thermal resistivity than a conventional DBR reflector.
摘要翻译：诸如VCSEL的发光装置在光产生层和底部反射器之间包括光产生层，顶部反射器，底部反射器和高热导率（HTC）层。光产生层适于产生具有第一波长的光。由于HTC层的存在，在光产生层产生的热更有效地消散。或者，诸如VCSEL的发光装置包括光产生层，顶反射器和高热导率（HTC）底反射器。由于底部反射器是具有比常规DBR反射器低的热电阻率的HTC DBR反射器的事实，在光产生层产生的热量更有效地消散。

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