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11. 发明授权

US09324597B2 Vertical inline CVD system 有权
标题翻译：垂直在线CVD系统
公开(公告)号：US09324597B2
公开(公告)日：2016-04-26
申请号：US13098255
申请日：2011-04-29
申请人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
发明人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
IPC分类号： H01J37/32 , H01L21/67 , C23C16/458 , C23C16/46 , C23C16/511 , C23C16/54 , H01L21/677
CPC分类号： H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要： The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.
摘要翻译：本发明一般涉及具有能够处理多个基板的处理室的垂直CVD系统。多个基板设置在处理室内的处理源的相对侧上，但处理环境彼此不隔离。处理源是水平居中的垂直等离子体发生器，其允许在等离子体发生器的任一侧上同时处理多个基板，但彼此独立。该系统被布置为双系统，由此两个相同的处理线各自具有它们自己的处理室，彼此相邻布置。多个机器人用于从处理系统装载和卸载基板。每个机器人可以访问系统内的两条处理线。

12. 发明申请

US20120031335A1 VERTICAL INLINE CVD SYSTEM 有权
标题翻译：立式CVD系统
公开(公告)号：US20120031335A1
公开(公告)日：2012-02-09
申请号：US13098255
申请日：2011-04-29
申请人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
发明人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
IPC分类号： C23C16/511 , C23C16/458 , C23C16/455
CPC分类号： H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要： The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.
摘要翻译：本发明一般涉及具有能够处理多个基板的处理室的垂直CVD系统。多个基板设置在处理室内的处理源的相对侧上，但处理环境彼此不隔离。处理源是水平居中的垂直等离子体发生器，其允许在等离子体发生器的任一侧上同时处理多个基板，但彼此独立。该系统被布置为双系统，由此两个相同的处理线各自具有它们自己的处理室，彼此相邻布置。多个机器人用于从处理系统装载和卸载基板。每个机器人可以访问系统内的两条处理线。

13. 发明授权

US09068262B2 Tightly fitted ceramic insulator on large area electrode 有权
标题翻译：在大面积电极上紧密配合陶瓷绝缘子
公开(公告)号：US09068262B2
公开(公告)日：2015-06-30
申请号：US13110184
申请日：2011-05-18
申请人： Jozef Kudela , Jonghoon Baek , John M. White , Robin Tiner , Suhail Anwar , Gaku Furuta
发明人： Jozef Kudela , Jonghoon Baek , John M. White , Robin Tiner , Suhail Anwar , Gaku Furuta
IPC分类号： C23C16/455 , C23C16/509 , H01J37/32
CPC分类号： B05B1/185 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/3244 , H01J37/32532 , H01J37/32623 , H01J37/32651 , Y10T137/6851
摘要： Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.
摘要翻译：本发明的实施例通常包括用于喷头组件的屏蔽框架组件和具有屏蔽框架组件的喷头组件，所述屏蔽框架组件包括紧密配合在真空处理室中的喷头周边周围的绝缘体。在一个实施例中，喷头组件包括气体分配板和环绕气体分布板的周边边缘的多片框架组件。多件式框架组件允许气体分配板的膨胀而不产生可能导致电弧的间隙。在其它实施例中，绝缘体被定位成具有集中在位于其中的气体分配板的周边的电场，从而减少电弧电势。

14. 发明授权

US09922854B2 Vertical inline CVD system 有权
公开(公告)号：US09922854B2
公开(公告)日：2018-03-20
申请号：US13098253
申请日：2011-04-29
申请人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
发明人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
IPC分类号： C23C16/458 , C23C16/46 , C23C16/511 , C23C16/54 , H01J37/32 , H01L21/67 , H01L21/677
CPC分类号： H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要： The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.

15. 发明申请

US20120031333A1 VERTICAL INLINE CVD SYSTEM 有权
公开(公告)号：US20120031333A1
公开(公告)日：2012-02-09
申请号：US13098253
申请日：2011-04-29
申请人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
发明人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
IPC分类号： H01L21/677 , C23C16/511 , B25J9/00 , C23C16/44
CPC分类号： H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要： The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.

16. 发明授权

US08883269B2 Thin film deposition using microwave plasma 有权
标题翻译：使用微波等离子体的薄膜沉积
公开(公告)号：US08883269B2
公开(公告)日：2014-11-11
申请号：US13331021
申请日：2011-12-20
申请人： Tae Kyung Won , Helinda Nominanda , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , John M. White , Suhail Anwar , Jozef Kudela
发明人： Tae Kyung Won , Helinda Nominanda , Seon-Mee Cho , Soo Young Choi , Beom Soo Park , John M. White , Suhail Anwar , Jozef Kudela
IPC分类号： H05H1/30 , C23C16/34 , C23C16/455 , C23C16/511 , C23C16/54 , H01J37/32
CPC分类号： C23C16/345 , C23C16/45578 , C23C16/511 , C23C16/545 , H01J37/32192 , H01J37/3222 , H01J37/3244
摘要： A method of processing a substrate in a processing chamber is provided. The method generally includes applying a microwave power to an antenna coupled to a microwave source disposed within the processing chamber, wherein the microwave source is disposed relatively above a gas feeding source configured to provide a gas distribution coverage covering substantially an entire surface of the substrate, and exposing the substrate to a microwave plasma generated from a processing gas provided by the gas feeding source to deposit a silicon-containing layer on the substrate at a temperature lower than about 200 degrees Celsius, the microwave plasma using a microwave power having a power density of about 500 milliWatts/cm2 to about 5,000 milliWatts/cm2 at a frequency of about 1 GHz to about 10 GHz.
摘要翻译：提供了一种在处理室中处理衬底的方法。该方法通常包括对耦合到设置在处理室内的微波源的天线施加微波功率，其中微波源设置在气体馈送源的相对上方，该气体馈送源被配置成提供覆盖基板整个表面的气体分布覆盖，以及将所述衬底暴露于由所述气体供给源提供的处理气体产生的微波等离子体，以在低于约200摄氏度的温度下在所述衬底上沉积含硅层，所述微波等离子体使用具有功率密度在约1GHz至约10GHz的频率下为约500毫瓦/厘米2至约5,000毫瓦/厘米2。

17. 发明授权

US08691047B2 Large area plasma processing chamber with at-electrode RF matching 有权
标题翻译：大面积等离子体处理室，具有电极RF匹配
公开(公告)号：US08691047B2
公开(公告)日：2014-04-08
申请号：US12948164
申请日：2010-11-17
申请人： Carl A. Sorensen , John M. White , Jozef Kudela
发明人： Carl A. Sorensen , John M. White , Jozef Kudela
IPC分类号： C23C16/505 , H01L21/3065
CPC分类号： H01J37/32577 , H01J37/32091 , H01J37/32183
摘要： A plasma processing system having at-electrode RF matching and a method for processing substrates utilizing the same is provided. In one embodiment, the plasma processing system includes a chamber body, the substrate support, an electrode, a lid assembly and an RF tuning element. A substrate support is disposed in a processing volume defined in the chamber body. The electrode is positioned above the substrate support and below a cover of the lid assembly. The RF tuning element is disposed between the cover and the electrode and is coupled to the electrode.
摘要翻译：提供具有电极射频匹配的等离子体处理系统以及利用该等离子体处理基板的方法。在一个实施例中，等离子体处理系统包括室主体，衬底支撑件，电极，盖组件和RF调谐元件。基板支撑件设置在室主体中限定的处理空间中。电极位于衬底支撑件的上方并位于盖子组件的盖子的下面。 RF调谐元件设置在盖和电极之间并且耦合到电极。

18. 发明申请

US20090159423A1 Asymmetrical RF Drive for Electrode of Plasma Chamber 有权
标题翻译：等离子室电极的非对称RF驱动
公开(公告)号：US20090159423A1
公开(公告)日：2009-06-25
申请号：US12343519
申请日：2008-12-24
申请人： Jozef Kudela , Carl A. Sorensen , Soo Young Choi , John M. White
发明人： Jozef Kudela , Carl A. Sorensen , Soo Young Choi , John M. White
IPC分类号： H05H1/00 , H01L21/3065 , B23H7/14
CPC分类号： H01L21/02 , B44C1/227 , C23C16/513 , H01J37/32091 , H01J37/32577 , H01L21/02104
摘要： RF power is coupled to one or more RF drive points (50-56) on an electrode (20-28) of a plasma chamber such that the level of RF power coupled to the RF drive points (51-52, 55-56) on the half (61) of the electrode that is closer to the workpiece passageway (12) exceeds the level of RF power coupled to the RF drive points (53-54), if any, on the other half (62) of the electrode. Alternatively, RF power is coupled to one or more RF drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center (60) of the electrode and the workpiece passageway. The weighted mean is based on weighting each drive point position by the time-averaged level of RF power coupled to that drive point position. The invention offsets an increase in plasma density that otherwise would exist adjacent the end of the electrode closest to the passageway.
摘要翻译： RF功率耦合到等离子体室的电极（20-28）上的一个或多个RF驱动点（50-56），使得耦合到RF驱动点（51-52,55-56）的RF功率的电平更靠近工件通道（12）的电极的一半（61）超过了电极的另一半（62）上耦合到RF驱动点（53-54）的RF功率的水平（如果有的话）。或者，RF功率耦合到等离子体室的电极上的一个或多个RF驱动点，使得驱动点位置的加权平均值在电极的中心（60）和工件通道之间。加权平均值基于通过耦合到该驱动点位置的RF功率的时间平均水平来加权每个驱动点位置。本发明抵消等离子体密度的增加，否则其将邻近电极最靠近通道的端部存在。

19. 发明申请

US20110135844A1 LARGE AREA PLASMA PROCESSING CHAMBER WITH AT-ELECTRODE RF MATCHING 有权
标题翻译：大面积等离子体加工室与电极射频匹配
公开(公告)号：US20110135844A1
公开(公告)日：2011-06-09
申请号：US12948164
申请日：2010-11-17
申请人： Carl A. Sorensen , John M. White , Jozef Kudela
发明人： Carl A. Sorensen , John M. White , Jozef Kudela
IPC分类号： C23C16/24 , C23C16/455 , C23C16/458 , C23C16/505 , C23C16/509 , C23C16/52
CPC分类号： H01J37/32577 , H01J37/32091 , H01J37/32183
摘要： A plasma processing system having at-electrode RF matching and a method for processing substrates utilizing the same is provided. In one embodiment, the plasma processing system includes a chamber body, the substrate support, an electrode, a lid assembly and an RF tuning element. A substrate support is disposed in a processing volume defined in the chamber body. The electrode is positioned above the substrate support and below a cover of the lid assembly. The RF tuning element is disposed between the cover and the electrode and is coupled to the electrode.
摘要翻译：提供具有电极射频匹配的等离子体处理系统以及利用该等离子体处理基板的方法。在一个实施例中，等离子体处理系统包括室主体，衬底支撑件，电极，盖组件和RF调谐元件。基板支撑件设置在室主体中限定的处理空间中。电极位于衬底支撑件的上方并位于盖子组件的盖子的下面。 RF调谐元件设置在盖和电极之间并且耦合到电极。

20. 发明申请

US20100089319A1 RF RETURN PATH FOR LARGE PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：用于大型等离子体加工室的RF返回路径
公开(公告)号：US20100089319A1
公开(公告)日：2010-04-15
申请号：US12576991
申请日：2009-10-09
申请人： Carl A. Sorensen , John M. White , Jozef Kudela , Jonghoon Baek , Jriyan Jerry Chen , Steve McPherson , Soo Young Choi , Robin L. Tiner
发明人： Carl A. Sorensen , John M. White , Jozef Kudela , Jonghoon Baek , Jriyan Jerry Chen , Steve McPherson , Soo Young Choi , Robin L. Tiner
IPC分类号： C23C16/00
CPC分类号： C23C16/4585 , C23C16/5096 , H01J37/32091 , H01J37/32174
摘要： A method and apparatus having a RF return path with low impedance coupling a substrate support to a chamber wall in a plasma processing system is provided. In one embodiment, a processing chamber includes a chamber body having a chamber sidewall, a bottom and a lid assembly supported by the chamber sidewall defining a processing region, a substrate support disposed in the processing region of the chamber body, a shadow frame disposed on an edge of the substrate support assembly, and a RF return path having a first end coupled to the shadow frame and a second end coupled to the chamber sidewall.
摘要翻译：提供了一种具有低阻抗的RF返回路径的方法和装置，其将衬底支撑件耦合到等离子体处理系统中的室壁。在一个实施例中，处理室包括室主体，其具有室侧壁，底部和盖组件，其由限定加工区域的室侧壁支撑，设置在室主体的处理区域中的基板支撑件，衬底支撑组件的边缘，以及RF返回路径，其具有耦合到阴影框架的第一端和联接到室侧壁的第二端。

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