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    • 13. 发明授权
    • Method of fabricating a polycrystalline film by crystallizing an amorphous film with laser light
    • 通过用激光结晶非晶膜制造多晶膜的方法
    • US07179725B2
    • 2007-02-20
    • US10529373
    • 2004-08-17
    • Mitsuo InoueHidetada TokiokaShinsuke Yura
    • Mitsuo InoueHidetada TokiokaShinsuke Yura
    • H01L21/20
    • H01L21/02686H01L21/02678H01L21/02691H01L21/2026H01L29/66757
    • A method of fabricating a thin-film of a semiconductor material includes: a scanning irradiation step of, in order to form a polycrystalline silicon film on the surface of a substrate, focusing first pulse laser light having a visible wavelength into a line shape having an intensity distribution of an approximately Gaussian shape in a width direction on the surface of the substrate and applying the light such that the line shape is shifted in the width direction; an edge processing step of, after performing the scanning irradiation step in one position in one direction, applying second pulse laser light having an ultraviolet wavelength to an end region of an edge parallel to the width direction of a region having undergone the scanning irradiation; and a step of applying the scanning irradiation step again to cover a region that is adjacent to the region covered by the scanning irradiation step as well as overlaps the end region having undergone the edge processing step.
    • 制造半导体材料薄膜的方法包括:扫描照射步骤,为了在基板的表面上形成多晶硅膜,将具有可见波长的第一脉冲激光聚焦成具有 在基板的表面上的宽度方向上的大致高斯形状的强度分布,并且施加光,使得线形状在宽度方向上偏移; 边缘处理步骤,在沿一个方向的一个位置执行扫描照射步骤之后,将具有紫外线波长的第二脉冲激光施加到与经过扫描照射的区域的宽度方向平行的边缘的端部区域; 以及再次施加扫描照射步骤以覆盖与扫描照射步骤所覆盖的区域相邻的区域以及与已经经历边缘处理步骤的端部区域重叠的步骤。