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1. 发明申请

US20060141683A1 Production method for thin-film semiconductor 失效
标题翻译：薄膜半导体的生产方法
公开(公告)号：US20060141683A1
公开(公告)日：2006-06-29
申请号：US10529373
申请日：2004-08-17
申请人： Mitsuo Inoue , Hidetada Tokioka , Shinsuke Yura
发明人： Mitsuo Inoue , Hidetada Tokioka , Shinsuke Yura
IPC分类号： H01L21/84 , H01L21/20 , C30B11/00
CPC分类号： H01L21/02686 , H01L21/02678 , H01L21/02691 , H01L21/2026 , H01L29/66757
摘要： A method of fabricating a thin-film of a semiconductor material includes: a scanning irradiation step of, in order to form a polycrystalline silicon film on the surface of a substrate, focusing first pulse laser light having a visible wavelength into a line shape having an intensity distribution of an approximately Gaussian shape in a width direction on the surface of the substrate and applying the light such that the line shape is shifted in the width direction; an edge processing step of, after performing the scanning irradiation step in one position in one direction, applying second pulse laser light having an ultraviolet wavelength to an end region of an edge parallel to the width direction of a region having undergone the scanning irradiation; and a step of applying the scanning irradiation step again to cover a region that is adjacent to the region covered by the scanning irradiation step as well as overlaps the end region having undergone the edge processing step.
摘要翻译：制造半导体材料薄膜的方法包括：扫描照射步骤，为了在基板的表面上形成多晶硅膜，将具有可见波长的第一脉冲激光聚焦成具有在基板的表面上的宽度方向上的大致高斯形状的强度分布，并且施加光，使得线形状在宽度方向上偏移; 边缘处理步骤，在沿一个方向的一个位置执行扫描照射步骤之后，将具有紫外线波长的第二脉冲激光施加到与经过扫描照射的区域的宽度方向平行的边缘的端部区域; 以及再次施加扫描照射步骤以覆盖与扫描照射步骤所覆盖的区域相邻的区域以及与已经经历边缘处理步骤的端部区域重叠的步骤。

2. 发明授权

US07223644B2 Method and apparatus for producing polycrystalline silicon film and method of manufacturing semiconductor device and thin-film transistor 失效
标题翻译：用于制造多晶硅膜的方法和装置及半导体器件和薄膜晶体管的制造方法
公开(公告)号：US07223644B2
公开(公告)日：2007-05-29
申请号：US10530026
申请日：2004-08-17
申请人： Mitsuo Inoue , Hidetada Tokioka , Shinsuke Yura
发明人： Mitsuo Inoue , Hidetada Tokioka , Shinsuke Yura
IPC分类号： H01L21/00
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L29/78675
摘要： A method for manufacturing a thin-film semiconductor includes polycrystallization to focus visible light pulse laser into a line shape on a surface of an object to be irradiated, and repeat irradiation with displacing the visible light pulse laser such that a line-shaped irradiated region is overlapped with a region irradiated at a next timing in a width direction of the line-shaped irradiated region, to form a polycrystalline silicon film on the surface of the object. The step of polycrystallization applies ultraviolet light pulse laser onto a second irradiated region partially overlapping the first irradiated region while or before the visible light pulse laser is applied to the first irradiated region.
摘要翻译：薄膜半导体的制造方法包括多晶化，将可见光脉冲激光聚焦成被照射物体的表面上的线状，并且通过使可见光脉冲激光器移位，使得线状照射区域为与在线状照射区域的宽度方向的下一定时照射的区域重叠，以在物体的表面上形成多晶硅膜。在将可见光脉冲激光器施加到第一照射区域之前或之前，多晶化步骤将紫外光脉冲激光施加到与第一照射区域部分重叠的第二照射区域上。

3. 发明授权

US07179725B2 Method of fabricating a polycrystalline film by crystallizing an amorphous film with laser light 失效
标题翻译：通过用激光结晶非晶膜制造多晶膜的方法
公开(公告)号：US07179725B2
公开(公告)日：2007-02-20
申请号：US10529373
申请日：2004-08-17
申请人： Mitsuo Inoue , Hidetada Tokioka , Shinsuke Yura
发明人： Mitsuo Inoue , Hidetada Tokioka , Shinsuke Yura
IPC分类号： H01L21/20
CPC分类号： H01L21/02686 , H01L21/02678 , H01L21/02691 , H01L21/2026 , H01L29/66757
摘要： A method of fabricating a thin-film of a semiconductor material includes: a scanning irradiation step of, in order to form a polycrystalline silicon film on the surface of a substrate, focusing first pulse laser light having a visible wavelength into a line shape having an intensity distribution of an approximately Gaussian shape in a width direction on the surface of the substrate and applying the light such that the line shape is shifted in the width direction; an edge processing step of, after performing the scanning irradiation step in one position in one direction, applying second pulse laser light having an ultraviolet wavelength to an end region of an edge parallel to the width direction of a region having undergone the scanning irradiation; and a step of applying the scanning irradiation step again to cover a region that is adjacent to the region covered by the scanning irradiation step as well as overlaps the end region having undergone the edge processing step.
摘要翻译：制造半导体材料薄膜的方法包括：扫描照射步骤，为了在基板的表面上形成多晶硅膜，将具有可见波长的第一脉冲激光聚焦成具有在基板的表面上的宽度方向上的大致高斯形状的强度分布，并且施加光，使得线形状在宽度方向上偏移; 边缘处理步骤，在沿一个方向的一个位置执行扫描照射步骤之后，将具有紫外线波长的第二脉冲激光施加到与经过扫描照射的区域的宽度方向平行的边缘的端部区域; 以及再次施加扫描照射步骤以覆盖与扫描照射步骤所覆盖的区域相邻的区域以及与已经经历边缘处理步骤的端部区域重叠的步骤。

4. 发明申请

US20060051943A1 Method and producing thin-film semicoductor and production device 失效
标题翻译：方法生产薄膜半导体和生产装置
公开(公告)号：US20060051943A1
公开(公告)日：2006-03-09
申请号：US10530026
申请日：2004-08-17
申请人： Mitsuo Inoue , Hidetada Tokioka , Shinsuke Yura
发明人： Mitsuo Inoue , Hidetada Tokioka , Shinsuke Yura
IPC分类号： H01L21/20 , B23K26/00
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L29/78675
摘要： A method for manufacturing a thin-film semiconductor includes polycrystallization to focus visible light pulse laser into a line shape on a surface of an object to be irradiated, and repeat irradiation with displacing the visible light pulse laser such that a line-shaped irradiated region is overlapped with a region irradiated at a next timing in a width direction of the line-shaped irradiated region, to form a polycrystalline silicon film on the surface of the object. The step of polycrystallization applies ultraviolet light pulse laser onto a second irradiated region partially overlapping the first irradiated region while or before the visible light pulse laser is applied to the first irradiated region.
摘要翻译：薄膜半导体的制造方法包括多晶化，将可见光脉冲激光聚焦成被照射物体的表面上的线状，并且通过使可见光脉冲激光器移位，使得线状照射区域为与在线状照射区域的宽度方向的下一定时照射的区域重叠，以在物体的表面上形成多晶硅膜。在将可见光脉冲激光器施加到第一照射区域之前或之前，多晶化步骤将紫外光脉冲激光施加到与第一照射区域部分重叠的第二照射区域上。

5. 发明授权

US07570244B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US07570244B2
公开(公告)日：2009-08-04
申请号：US10513755
申请日：2003-06-17
申请人： Masafumi Agari , Hidetada Tokioka , Ryuichi Hashido , Takahiro Urakabe , Suehiro Gotoh , Masashi Okabe , Mitsuo Inoue
发明人： Masafumi Agari , Hidetada Tokioka , Ryuichi Hashido , Takahiro Urakabe , Suehiro Gotoh , Masashi Okabe , Mitsuo Inoue
IPC分类号： G09G3/36
CPC分类号： G09G3/3283 , G09G3/3241 , G09G2300/0417 , G09G2300/0842 , G09G2300/0861 , G09G2310/027 , G09G2310/0297 , G09G2320/0242
摘要： Signal lines for supplying signal currents to respective pixel circuits having light emitting elements are arranged. A signal line driving circuit generates, on a signal line, a signal current corresponding to the image data, by switching bit weighting currents output from bit weighting current source circuits provided for respective bits of the image data, using a switch circuit turned on/off dependent on the corresponding bit. Each current source circuit has a function of correcting the level of the bit weighting current output from itself, based on a reference current of the bit weighting current supplied from a reference current line. Therefore, even when the characteristics of TFTs forming respective current source circuits vary widely, variation in signal currents among the signal lines can be suppressed, and unevenness in emission luminance can be suppressed.
摘要翻译：布置用于向具有发光元件的各个像素电路提供信号电流的信号线。信号线驱动电路通过使用开关电路接通/断开来切换信号线上产生与图像数据相对应的信号电流，通过切换由针对图像数据的各个比特设置的比特加权电流源电路输出的比特加权电流取决于相应的位。每个电流源电路具有基于从参考电流线提供的比特加权电流的参考电流来校正其自身输出的比特加权电流的电平的功能。因此，即使形成各个电流源电路的TFT的特性变化很大，也可以抑制信号线之间的信号电流的变化，能够抑制发光亮度的不均匀。

6. 发明授权

US06756953B1 Liquid crystal display device implementing gray scale based on digital data as well as portable telephone and portable digital assistance device provided with the same 有权
标题翻译：基于数字数据实现灰度的液晶显示装置以及具有该数字数据的便携式电话和便携式数字辅助装置
公开(公告)号：US06756953B1
公开(公告)日：2004-06-29
申请号：US09716242
申请日：2000-11-21
申请人： Hidetada Tokioka , Masafumi Agari , Hiroyuki Murai , Mitsuo Inoue
发明人： Hidetada Tokioka , Masafumi Agari , Hiroyuki Murai , Mitsuo Inoue
IPC分类号： G09G336
CPC分类号： G09G3/3659 , G09G3/2074 , G09G2300/0828 , G09G2300/0842 , G09G2330/021
摘要： Each of pixels arranged in a matrix is divided into sub pixels. Horizontal scanning lines and vertical scanning lines are arranged corresponding to rows and columns of the sub pixels, so that each sub pixel can be independently on and off. Each pixel includes a sub pixel connection circuit arranged between the sub pixels. A sub pixel connection circuit connects the pixel electrodes of corresponding sub pixels in accordance with a sub pixel connection signal input from a data line in synchronization with activation of vertical scanning line.
摘要翻译：排列成矩阵的每个像素被划分为子像素。水平扫描线和垂直扫描线对应于子像素的行和列布置，使得每个子像素可以独立地开和关。每个像素包括布置在子像素之间的子像素连接电路。子像素连接电路根据从数据线输入的子像素连接信号与垂直扫描线的激活同步地连接相应子像素的像素电极。

7. 发明授权

US06621477B1 Liquid crystal display device 失效
标题翻译：液晶显示装置
公开(公告)号：US06621477B1
公开(公告)日：2003-09-16
申请号：US09708559
申请日：2000-11-09
申请人： Mitsuo Inoue , Masafumi Agari , Hiroyuki Murai , Hidetada Tokioka
发明人： Mitsuo Inoue , Masafumi Agari , Hiroyuki Murai , Hidetada Tokioka
IPC分类号： G09G336
CPC分类号： G09G3/2011 , G09G3/3659 , G09G2300/0828 , G09G2300/0852
摘要： In a color liquid crystal display device, two capacitors are connected in parallel between a pixel signal line and an electrode of a liquid cell, or one of the capacitors is connected therebetween, or none of the capacitors are connected therebetween, in order to selectively set a potential of the electrode of the liquid crystal cell in any of four steps. Therefore, gradation display in four steps can be achieved without a digital-to-analog conversion circuit, so that the cost of the device can be reduced.
摘要翻译：在彩色液晶显示装置中，两个电容器并联连接在像素信号线和液晶盒的电极之间，或者其中一个电容器连接在它们之间，或者没有一个电容器连接在它们之间，以便选择性地设置液晶单元的电极的电位在四个步骤中的任一个中。因此，无需数字 - 模拟转换电路即可实现四级梯度显示，从而可以降低器件的成本。

8. 发明申请

US20050174306A1 Display device 有权
标题翻译：显示设备
公开(公告)号：US20050174306A1
公开(公告)日：2005-08-11
申请号：US10513755
申请日：2003-06-17
申请人： Masafumi Agari , Hidetada Tokioka , Ryuichi Hashido , Takahiro Urakabe , Suehiro Gotoh , Masashi Okabe , Mitsuo Inoue
发明人： Masafumi Agari , Hidetada Tokioka , Ryuichi Hashido , Takahiro Urakabe , Suehiro Gotoh , Masashi Okabe , Mitsuo Inoue
IPC分类号： G09G3/32 , G09G3/30
CPC分类号： G09G3/3283 , G09G3/3241 , G09G2300/0417 , G09G2300/0842 , G09G2300/0861 , G09G2310/027 , G09G2310/0297 , G09G2320/0242
摘要： Signal lines for supplying signal currents to respective pixel circuits having light emitting elements are arranged. A signal line driving circuit generates, on a signal line, a signal current corresponding to the image data, by switching bit weighting currents output from bit weighting current source circuits provided for respective bits of the image data, using a switch circuit turned on/off dependent on the corresponding bit. Each current source circuit has a function of correcting the level of the bit weighting current output from itself, based on a reference current of the bit weighting current supplied from a reference current line. Therefore, even when the characteristics of TFTs forming respective current source circuits vary widely, variation in signal currents among the signal lines can be suppressed, and unevenness in emission luminance can be suppressed.
摘要翻译：布置用于向具有发光元件的各个像素电路提供信号电流的信号线。信号线驱动电路通过使用开关电路接通/断开来切换信号线上产生与图像数据相对应的信号电流，通过切换由针对图像数据的各个比特设置的比特加权电流源电路输出的比特加权电流取决于相应的位。每个电流源电路具有基于从参考电流线提供的比特加权电流的参考电流来校正其自身输出的比特加权电流的电平的功能。因此，即使形成各个电流源电路的TFT的特性变化很大，也可以抑制信号线之间的信号电流的变化，能够抑制发光亮度的不均匀。

9. 发明授权

US06884699B1 Process and unit for production of polycrystalline silicon film 有权
标题翻译：生产多晶硅膜的工艺和单元
公开(公告)号：US06884699B1
公开(公告)日：2005-04-26
申请号：US10148562
申请日：2000-10-06
申请人： Tetsuya Ogawa , Hidetada Tokioka , Junichi Nishimae , Tatsuki Okamoto , Yukio Sato , Mitsuo Inoue , Mitsutoshi Miyasaka , Hiroaki Jiroku
发明人： Tetsuya Ogawa , Hidetada Tokioka , Junichi Nishimae , Tatsuki Okamoto , Yukio Sato , Mitsuo Inoue , Mitsutoshi Miyasaka , Hiroaki Jiroku
IPC分类号： C23C14/58 , H01L21/20 , H01L21/336 , H01L21/00 , H01L21/331 , H01L21/26
CPC分类号： C23C14/5813 , B23K26/0604 , B23K26/0738 , B23K26/0838 , B23K26/352 , B23K2101/40 , B23K2103/52 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L29/66757 , Y10S438/969
摘要： A process for making a polycrystalline silicon film includes forming, on a glass substrate, an amorphous silicon film having a first region and a second region that contacts the first region, forming a first polycrystalline portion by irradiating the first region of the amorphous silicon film with laser light having a wavelength not less than 390 nm and not more than 640 nm and forming a second polycrystalline portion that contacts the first polycrystalline portion by irradiating the second region and the portion of the region of the first polycrystalline portion that contacts the second region of the amorphous silicon film with the laser light.
摘要翻译：一种制造多晶硅膜的方法包括在玻璃基板上形成具有与第一区域接触的第一区域和第二区域的非晶硅膜，通过用非晶硅膜的第一区域照射非晶硅膜形成第一多晶部分，具有不小于390nm且不大于640nm的波长的激光，并且通过照射第二区域和形成与第一多晶部分接触的第二多晶部分的区域的部分形成第二多晶部分，具有激光的非晶硅膜。

10. 发明授权

US06573161B1 Thin film semiconductor device fabrication process 有权
标题翻译：薄膜半导体器件制造工艺
公开(公告)号：US06573161B1
公开(公告)日：2003-06-03
申请号：US09674645
申请日：2000-11-02
申请人： Mitsutoshi Miyasaka , Tetsuya Ogawa , Hidetada Tokioka , Yukio Satoh , Mitsuo Inoue , Tomohiro Sasagawa
发明人： Mitsutoshi Miyasaka , Tetsuya Ogawa , Hidetada Tokioka , Yukio Satoh , Mitsuo Inoue , Tomohiro Sasagawa
IPC分类号： H01L2120
CPC分类号： H01L21/02686 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L21/02683 , H01L21/02691 , H01L21/2026 , H01L21/268 , H01L27/1296 , H01L29/04 , H01L29/66757
摘要： A fabrication process is provided for semiconductor devices having a crystalline semiconductor film formed on a substrate, the semiconductor film being an active layer of a transistor and being mainly composed of silicon, and includes at least an underlevel protection layer fabrication step of forming a silicon oxide film as an underlevel protection layer on the substrate; a first processing step of forming a semiconductor film, which is mainly composed of silicon, on the underlevel protection layer; and a second processing step of irradiating a pulsed laser light on the semiconductor film. The semiconductor film is irradiated by a pulsed laser, the wavelength of the pulsed laser light is between 370 and 710 nm. As a result, using a low temperature process, high performance thin film semiconductor devices can be produced simply and reliably.
摘要翻译：本发明提供一种半导体器件的制造方法，该半导体器件具有在基板上形成的结晶半导体膜，该半导体膜是主要由硅组成的晶体管的有源层，并且至少包括形成氧化硅的底层保护层制造步骤膜作为衬底上的底层保护层; 在衬底保护层上形成主要由硅构成的半导体膜的第一处理步骤; 以及在半导体膜上照射脉冲激光的第二处理步骤。半导体膜被脉冲激光照射，脉冲激光的波长在370和710nm之间。结果，使用低温工艺，可以简单可靠地制造高性能薄膜半导体器件。

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