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11. 发明授权

US6022666A Chemical-sensitization photoresist composition 有权
标题翻译：化学增感光刻胶组合物
公开(公告)号：US6022666A
公开(公告)日：2000-02-08
申请号：US236567
申请日：1999-01-26
申请人： Hideo Hada , Hiroyuki Yamazaki , Yoshiki Sugeta , Hiroshi Komano
发明人： Hideo Hada , Hiroyuki Yamazaki , Yoshiki Sugeta , Hiroshi Komano
IPC分类号： C09K3/00 , G03F7/004 , G03F7/033 , G03F7/038 , G03F7/039 , H01L21/027 , G03C1/492
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/039 , Y10S430/12 , Y10S430/122
摘要： Disclosed are novel high-sensitivity positive- and negative-working chemical-sensitization photoresist compositions capable of giving a highly heat-resistant patterned resist layer of high resolution having excellently orthogonal cross sectional profile without being influenced by standing waves. The composition contains, as an acid generating agent by irradiation with actinic rays, a specific cyano-substituted oximesulfonate compound such as .alpha.-(methylsulfonyloxyimino)-4-methoxybenzyl cyanide. The advantages obtained by the use of this specific acid-generating agent is remarkable when the film-forming resinous ingredient has such a molecular weight distribution that the ratio of the weight-average molecular weight to the number-average molecular weight does not exceed 3.5.
摘要翻译：公开了能够赋予高分辨率的高耐热图案化抗蚀剂层的新型高灵敏度正负工作化学增感光致抗蚀剂组合物，而不受驻波的影响，具有非常正交的横截面轮廓。该组合物通过用光化射线照射作为酸产生剂含有特定的氰基取代的肟磺酸酯化合物，例如α-（甲基磺酰氧基亚氨基）-4-甲氧基苄基氰化物。当成膜树脂成分具有使重均分子量与数均分子量的比例不超过3.5的分子量分布时，通过使用该特定酸产生剂获得的优点是显着的。

12. 发明授权

US5990338A Negative-working chemical-sensitization photoresist composition 有权
标题翻译：负性化学增感光刻胶组合物
公开(公告)号：US5990338A
公开(公告)日：1999-11-23
申请号：US179817
申请日：1998-10-28
申请人： Hideo Hada , Yoshiki Sugeta , Hiroyuki Yamazaki , Hiroshi Komano
发明人： Hideo Hada , Yoshiki Sugeta , Hiroyuki Yamazaki , Hiroshi Komano
IPC分类号： C07C307/02 , C07C309/65 , C07C309/66 , C07C309/73 , G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , C07C255/00
CPC分类号： C07C309/66 , C07C309/65 , C07C309/73 , G03F7/0045
摘要： Disclosed is a novel positive-working or negative-working chemical-sensitization photoresist composition useful in the photolithographic patterning works for the manufacture of electronic devices. The photoresist composition is characterized by a unique acid-generating agent capable of releasing an acid by the pattern-wise exposure of the resist layer to actinic rays so as to increase or decrease the solubility of the resist layer in an aqueous alkaline developer solution. The acid-generating agent proposed is a novel cyano group-containing oxime sulfonate di- or triester compound represented by the general formulaA[C(CN).dbd.N--O--SO.sub.2 --R].sub.n,in which each R is, independently from the others, an unsubstituted or substituted monovalent hydrocarbon group such as alkyl groups, A is a divalent or tervalent organic group or, preferably, phenylene group and the subscript n is 2, when A is a divalent group, or 3, when A is a tervalent group or, preferably 2. Since more than one of sulfonic acid molecules are released from one molecule of the sulfonate compound by the exposure to actinic rays, the chemical-sensitization photoresist composition exhibits high photosensitivity.
摘要翻译：公开了一种用于制造电子器件的光刻图案化工艺中的新型正性或负性化学增感光致抗蚀剂组合物。光致抗蚀剂组合物的特征在于能够通过抗蚀剂层与光化射线的图案曝光而释放酸的独特的酸产生剂，从而增加或降低抗蚀剂层在碱性显影剂水溶液中的溶解度。所提出的酸产生剂是由通式A [C（CN）= NO-SO 2 -R] n表示的新的含氰基的肟磺酸酯二酯或三酯化合物，其中每个R独立地为未取代或取代的一价烃基如烷基，A是二价或三价有机基团，或优选亚苯基，下标n为2，当A为二价基团时，或3，当A为三价基团或，优选2.由于通过暴露于光化射线，一个以上的磺酸分子从一分子的磺酸酯化合物中释放出来，化学增感光致抗蚀剂组合物表现出高的光敏性。

13. 发明授权

US5902713A Chemical-sensitization photoresist composition 失效
公开(公告)号：US5902713A
公开(公告)日：1999-05-11
申请号：US762920
申请日：1996-12-10
申请人： Hideo Hada , Hiroyuki Yamazaki , Yoshiki Sugeta , Hiroshi Komano , Kiyoshi Ishikawa
发明人： Hideo Hada , Hiroyuki Yamazaki , Yoshiki Sugeta , Hiroshi Komano , Kiyoshi Ishikawa
IPC分类号： C09K3/00 , G03F7/004 , G03F7/033 , G03F7/038 , G03F7/039 , H01L21/027 , G03C5/00
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/039 , Y10S430/12 , Y10S430/122
摘要： Disclosed are novel high-sensitivity positive- and negative-working chemical-sensitization photoresist compositions capable of giving a highly heat-resistant patterned resist layer of high resolution having excellently orthogonal cross sectional profile without being influenced by standing waves. The composition contains, as an acid generating agent by irradiation with actinic rays, a specific cyano-substituted oximesulfonate compound such as .alpha.-(methylsulfonyloxyimino)-4-methoxybenzyl cyanide. The advantages obtained by the use of this specific acid-generating agent is remarkable when the film-forming resinous ingredient has such a molecular weight distribution that the ratio of the weight-average molecular weight to the number-average molecular weight does not exceed 3.5.

14. 发明授权

US06329126B1 Developer solution for acitinic ray sensitive resist 失效
标题翻译：用于acitinic光敏抗蚀剂的显影剂溶液
公开(公告)号：US06329126B1
公开(公告)日：2001-12-11
申请号：US08339340
申请日：1994-11-14
申请人： Hatsuyuki Tanaka , Mitsuru Sato , Toshimasa Nakayama , Hiroshi Komano
发明人： Hatsuyuki Tanaka , Mitsuru Sato , Toshimasa Nakayama , Hiroshi Komano
IPC分类号： G03F732
CPC分类号： G03F7/322
摘要： Disclosed is a novel aqueous developer solution used in the development treatment of an actinic ray-sensitive resist for the manufacture of, for example, semiconductor devices, which is capable of giving a patterned resist layer free from the troubles of film residue or scum deposition in any finest patterning. The developer solution contains, in addition to a nitrogen-containing organic basic compound, e.g., tetramethyl ammonium hydroxide, dissolved in an aqueous medium as the solvent, an anionic surface active agent which is a diphenyl ether compound having at least one ammonium sulfonate group, such as an ammonium alkyl diphenylether sulfonate, in a concentration of 0.05 to 5% by weight.
摘要翻译：公开了一种用于显影处理用于制造例如半导体器件的光化抗敏抗蚀剂的新型水性显影剂溶液，其能够提供没有膜残留物或浮渣沉积问题的图案化抗蚀剂层任何最好的图案。除了溶解在作为溶剂的水性介质中的含氮有机碱性化合物例如四甲基氢氧化铵之外，显影剂溶液还含有具有至少一个磺酸铵基团的二苯基醚化合物的阴离子表面活性剂，例如烷基二苯基醚磺酸铵，其浓度为0.05-5重量％。

15. 发明授权

US06171749B2 Negative-working chemical-amplification photoresist composition 失效
标题翻译：负性化学增幅光刻胶组合物
公开(公告)号：US06171749B2
公开(公告)日：2001-01-09
申请号：US09239798
申请日：1999-01-29
申请人： Toshikazu Tachikawa , Fumitake Kaneko , Satoshi Fujimura , Miwa Miyairi , Hiroshi Komano , Toshimasa Nakayama
发明人： Toshikazu Tachikawa , Fumitake Kaneko , Satoshi Fujimura , Miwa Miyairi , Hiroshi Komano , Toshimasa Nakayama
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/038 , Y10S430/106
摘要： Disclosed is a novel negative-working chemical-amplification photoresist composition comprising, as the essential ingredients, (A) an alkali-soluble resin, (B) a radiation-sensitive acid-generating agent and (C) a cross-linking agent. Characteristically, the component (B) is a combination of a halogenoacid-generating compound and a bis(alkylsulfonyl) diazomethane compound in a specified proportion. By virtue of this unique formulation of the composition, the photoresist composition can give a patterned resist layer having excellently orthogonal cross sectional profile in a high photosensitivity.
摘要翻译：公开了一种新型负性化学增幅光致抗蚀剂组合物，其包含（A）碱溶性树脂，（B）辐射敏感性产酸剂和（C）交联剂作为必要成分。特征地，组分（B）是指定比例的产生卤代酸的化合物和双（烷基磺酰基）重氮甲烷化合物的组合。由于该组合物的这种独特配方，光致抗蚀剂组合物可以在高感光度下得到具有优异正交横截面轮廓的图案化抗蚀剂层。

16. 发明授权

US5543268A Developer solution for actinic ray-sensitive resist 失效
标题翻译：用于光化射线敏感抗蚀剂的显影剂溶液
公开(公告)号：US5543268A
公开(公告)日：1996-08-06
申请号：US231877
申请日：1994-04-22
申请人： Hatsuyuki Tanaka , Mitsuru Sato , Toshimasa Nakayama , Hiroshi Komano
发明人： Hatsuyuki Tanaka , Mitsuru Sato , Toshimasa Nakayama , Hiroshi Komano
IPC分类号： G03F7/32
CPC分类号： G03F7/322
摘要： Disclosed is a novel aqueous developer solution used in the development treatment of an actinic ray-sensitive resist for the manufacture of, for example, semiconductor devices, which is capable of giving a patterned resist layer free from the troubles of film residue or scum deposition in any finest patterning. The developer solution contains, in addition to a nitrogen-containing organic basic compound, e.g., tetramethyl ammonium hydroxide, dissolved in an aqueous medium as the solvent, an anionic surface active agent which is a diphenyl ether compound having at least one ammonium sulfonate group, such as an ammonium alkyl diphenylether sulfonate, in a concentration of 0.05 to 5% by weight.
摘要翻译：公开了一种用于显影处理用于制造例如半导体器件的光化抗敏抗蚀剂的新型水性显影剂溶液，其能够提供没有膜残留物或浮渣沉积问题的图案化抗蚀剂层任何最好的图案。除了溶解在作为溶剂的水性介质中的含氮有机碱性化合物例如四甲基氢氧化铵之外，显影剂溶液还含有具有至少一个磺酸铵基团的二苯基醚化合物的阴离子表面活性剂，例如烷基二苯基醚磺酸铵，其浓度为0.05-5重量％。

17. 发明授权

US06261745B1 Post-ashing treating liquid compositions and a process for treatment therewith 有权
标题翻译：后灰化处理液体组合物及其处理方法
公开(公告)号：US06261745B1
公开(公告)日：2001-07-17
申请号：US09323988
申请日：1999-06-02
申请人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Hiroshi Komano , Toshimasa Nakayama
发明人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Hiroshi Komano , Toshimasa Nakayama
IPC分类号： G03F740
CPC分类号： H01L21/02071 , G03F7/425 , G03F7/427 , H01L21/02052 , H01L21/31116 , H01L21/31138
摘要： Disclosed herein is a post-ashing treating liquid composition comprising a salt of hydrofluoric acid with a base free from metal ions, a water-soluble organic solvent, water, and an acetylene alcohol/alkylene oxide adduct. Disclosed also herein is a process for treatment with said treating liquid composition. For removal of resist residues such as modified photoresist films and metal depositions, the treating liquid composition and the treating process can be advantageously applied to the substrates having been dry-etched, followed by ashing under severe conditions, without corrosion on metal layers and damage to an organic SOG layer formed thereon.
摘要翻译：本文公开了一种后灰化处理液体组合物，其包含氢氟酸盐与不含金属离子的碱，水溶性有机溶剂，水和乙炔醇/烯化氧加合物。本文还公开了用所述处理液组合物进行处理的方法。为了除去抗蚀剂残留物如改性光致抗蚀剂膜和金属沉积物，处理液组合物和处理方法可以有利地应用于已经被干法蚀刻的基底上，随后在苛刻条件下灰化，而不会对金属层产生腐蚀和损坏在其上形成有机SOG层。

18. 发明授权

US06225476B1 Positive-working photoresist composition 有权
标题翻译：正光刻胶组合物
公开(公告)号：US06225476B1
公开(公告)日：2001-05-01
申请号：US09542952
申请日：2000-04-04
申请人： Hideo Hada , Kazufumi Sato , Hiroshi Komano
发明人： Hideo Hada , Kazufumi Sato , Hiroshi Komano
IPC分类号： C07D30733
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： Provided by the invention is a chemical-amplification positive-working photoresist composition used in the fine photolithographic patterning in the manufacturing process of semiconductor devices, which is suitable for the patterning light exposure with ArF excimer laser beams of very short wavelength by virtue of absence of aromatic structure in the ingredients of the composition. The composition comprises, as the film-forming resinous ingredient, an acrylic resin having unique monomeric units represented by the general formula &Brketopenst;CH2—CR1(—CO—O—CR2R3R4)&Brketclosest;, in which R1 is a hydrogen atom or a methyl group, R2 and R3 are each, independently from the other, an alkyl group having 1 to 4 carbon atoms and R4 is an alkoxycarbonyl group or a group derived from a molecule of a lactone compound or ketone compound by removing a hydrogen atom bonded to the carbon atom.
摘要翻译：本发明提供的是在半导体器件的制造过程中用于精细光刻图案化的化学放大正性光致抗蚀剂组合物，其适用于通过不存在非常短的波长的ArF准分子激光束来图案化曝光芳香结构在组成成分中。该组合物包含作为成膜树脂成分的丙烯酸树脂，其具有由通式为R 1为氢原子或甲基的单体单元表示的独特单体单元，R 2和R 3各自独立地为具有通过除去与碳原子键合的氢原子，R4是烷氧基羰基或衍生自内酯化合物或酮化合物的分子的基团。

19. 发明授权

US5973187A Positive-working chemical-sensitization photoresist composition 有权
标题翻译：正性化学增感光刻胶组合物
公开(公告)号：US5973187A
公开(公告)日：1999-10-26
申请号：US179818
申请日：1998-10-28
申请人： Hideo Hada , Yoshiki Sugeta , Hiroyuki Yamazaki , Hiroshi Komano
发明人： Hideo Hada , Yoshiki Sugeta , Hiroyuki Yamazaki , Hiroshi Komano
IPC分类号： C07C307/02 , C07C309/65 , C07C309/66 , C07C309/73 , G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , C07C255/00
CPC分类号： C07C309/66 , C07C309/65 , C07C309/73 , G03F7/0045
摘要： Disclosed is a novel positive-working or negative-working chemical-sensitization photoresist composition useful in the photolithographic patterning works for the manufacture of electronic devices. The photoresist composition is characterized by a unique acid-generating agent capable of releasing an acid by the pattern-wise exposure of the resist layer to actinic rays so as to increase or decrease the solubility of the resist layer in an aqueous alkaline developer solution. The acid-generating agent proposed is a novel cyano group-containing oxime sulfonate di- or triester compound represented by the general formulaA[C(CN).dbd.N--O--SO.sub.2 --R].sub.n,in which each R is, independently from the others, an unsubstituted or substituted monovalent hydrocarbon group such as alkyl groups, A is a divalent or tervalent organic group or, preferably, phenylene group and the subscript n is 2, when A is a divalent group, or 3, when A is a tervalent group or, preferably 2. Since more than one of sulfonic acid molecules are released from one molecule of the sulfonate compound by the exposure to actinic rays, the chemical-sensitization photoresist composition exhibits high photosensitivity.
摘要翻译：公开了一种用于制造电子器件的光刻图案化工艺中的新型正性或负性化学增感光致抗蚀剂组合物。光致抗蚀剂组合物的特征在于能够通过抗蚀剂层与光化射线的图案曝光而释放酸的独特的酸产生剂，从而增加或降低抗蚀剂层在碱性显影剂水溶液中的溶解度。所提出的酸产生剂是由通式A [C（CN）= NO-SO 2 -R] n表示的新的含氰基的肟磺酸酯二酯或三酯化合物，其中每个R独立地为未取代或取代的一价烃基如烷基，A是二价或三价有机基团，或优选亚苯基，下标n为2，当A为二价基团时，或3，当A为三价基团或，优选2.由于通过暴露于光化射线，一个以上的磺酸分子从一分子的磺酸酯化合物中释放出来，化学增感光致抗蚀剂组合物表现出高的光敏性。

20. 发明申请

US20060035170A1 Negative photoresist compositions for the formation of thick films, photoresist films and methods of forming bumps using the same 有权
公开(公告)号：US20060035170A1
公开(公告)日：2006-02-16
申请号：US11258274
申请日：2005-10-26
申请人： Koji Saito , Kouichi Misumi , Toshiki Okui , Hiroshi Komano
发明人： Koji Saito , Kouichi Misumi , Toshiki Okui , Hiroshi Komano
IPC分类号： G03C1/76
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , Y10S430/111 , Y10S430/113
摘要： A negative photoresist composition is used for the formation of thick films and includes (A) a novolak resin, (B) a plasticizer, (C) a crosslinking agent and (D) an acid generator. The composition is applied onto a substrate and thereby yields a photoresist film 5 to 100 μm thick. Likewise, the composition is applied onto a substrate of an electronic part, is patterned, is plated and thereby yields a bump.

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