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1. 发明授权

US09436084B2 Positive-working photoresist composition for thick film formation 有权
标题翻译：用于厚膜形成的正性光致抗蚀剂组合物
公开(公告)号：US09436084B2
公开(公告)日：2016-09-06
申请号：US11792752
申请日：2006-03-22
申请人： Koichi Misumi , Toshiki Okui
发明人： Koichi Misumi , Toshiki Okui
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027 , C08F220/18 , C07D251/02
CPC分类号： G03F7/0397 , C07D251/02 , C08F220/18 , G03F7/004 , G03F7/0392 , H01L21/0274
摘要： The invention provides a chemical-amplification positive-working photoresist composition suitable for forming a resist film of a relatively large thickness on a substrate in addition to other advantages. The inventive composition contains (A) a photoacid-generating agent, (B) an alkali-insoluble resin capable of being imparted with increased alkali-solubility by interaction with an acid, (C) an alkali-soluble resin and (D) an organic solvent, wherein the component (C) is (C1) a polyhydroxystyrene or a copolymer having at least 80% by mass of the hydroxystyrene units in an amount not exceeding 15 parts by mass relative to 100 parts by mass of the total amount of the components (B) and (C).
摘要翻译：本发明提供了除了其它优点之外，还适用于在基片上形成厚度相对较大的抗蚀剂膜的化学放大正性光致抗蚀剂组合物。本发明的组合物含有（A）光致酸产生剂，（B）能够通过与酸相互作用而赋予碱溶性增加的碱不溶性树脂，（C）碱溶性树脂和（D）有机溶剂，其中组分（C）为（C1）聚羟基苯乙烯或共聚物，相对于100质量份的组分的总量，相对于100质量份，羟基苯乙烯单元的至少80质量％的量不超过15质量份（B）和（C）。

2. 发明申请

US20060141388A1 Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal 有权
标题翻译：化学扩增用于厚膜，厚膜光致抗蚀剂层压产品的正性光致抗蚀剂组合物，厚膜抗蚀剂图案的制造方法和连接端子的制造方法
公开(公告)号：US20060141388A1
公开(公告)日：2006-06-29
申请号：US11025833
申请日：2004-12-29
申请人： Toshiki Okui , Koichi Misumi
发明人： Toshiki Okui , Koichi Misumi
IPC分类号： G03C1/76
CPC分类号： G03F7/0397
摘要： A chemically amplified positive photoresist composition for thick film that is used for forming a thick-film photoresist layer with a film thickness of 10 to 150 μm on top of a support, including (A) a compound that generates acid on irradiation with active light or radiation, and (B) a resin that displays increased alkali solubility under the action of acid, wherein the component (B) comprises a resin containing a structural unit (b1) with a specific structure, and another resin containing a structural unit (b2) with a specific structure.
摘要翻译：一种用于厚膜的化学放大型正性光致抗蚀剂组合物，其用于在载体上形成膜厚度为10至150μm的厚膜光致抗蚀剂层，包括（A）在用活性光照射时产生酸的化合物或（B）包含具有特定结构的结构单元（b1）的树脂和含有结构单元（b2）的树脂，（B）含有结构单元（b2）的树脂，具体结构。

3. 发明申请

US20060141386A1 Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal 有权
标题翻译：化学扩增用于厚膜，厚膜光致抗蚀剂层压产品的正性光致抗蚀剂组合物，厚膜抗蚀剂图案的制造方法和连接端子的制造方法
公开(公告)号：US20060141386A1
公开(公告)日：2006-06-29
申请号：US11025589
申请日：2004-12-29
申请人： Toshiki Okui , Koichi Misumi , Koji Saito
发明人： Toshiki Okui , Koichi Misumi , Koji Saito
IPC分类号： G03C1/76
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0397 , Y10S430/106 , Y10T428/265 , Y10T428/269
摘要： A chemically amplified positive photoresist composition for thick film that is used for forming a thick-film photoresist layer with a film thickness of 10 to 150 μm on top of a support, comprising (A) a compound that generates acid on irradiation with active light or radiation, (B) a resin that displays increased alkali solubility under the action of acid, and (C) an alkali-soluble resin, wherein the component (B) comprises a resin formed from a copolymer containing a structural unit (b1) with a specific structure.
摘要翻译：一种用于厚膜的化学放大型正性光致抗蚀剂组合物，其用于在载体上形成膜厚度为10至150μm的厚膜光致抗蚀剂层，其包含（A）在活性光照射下产生酸的化合物或辐射，（B）在酸的作用下显示增加的碱溶性的树脂，和（C）碱溶性树脂，其中组分（B）包含由含有结构单元（b1）的共聚物形成的树脂，具体结构。

4. 发明授权

US07063934B2 Negative photoresist compositions for the formation of thick films, photoresist films and methods of forming bumps using the same 失效
公开(公告)号：US07063934B2
公开(公告)日：2006-06-20
申请号：US10147984
申请日：2002-05-20
申请人： Koji Saito , Kouichi Misumi , Toshiki Okui , Hiroshi Komano
发明人： Koji Saito , Kouichi Misumi , Toshiki Okui , Hiroshi Komano
IPC分类号： G03F7/038 , G03F7/11 , G03F7/40 , G03F7/023
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , Y10S430/111 , Y10S430/113
摘要： A negative photoresist composition is used for the formation of thick films and includes (A) a novolak resin, (B) a plasticizer, (C) a crosslinking agent and (D) an acid generator. The composition is applied onto a substrate and thereby yields a photoresist film 5 to 100 μm thick. Likewise, the composition is applied onto a substrate of an electronic part, is patterned, is plated and thereby yields a bump.

5. 发明授权

US07951522B2 Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal 有权
标题翻译：化学扩增用于厚膜，厚膜光致抗蚀剂层压产品的正性光致抗蚀剂组合物，厚膜抗蚀剂图案的制造方法和连接端子的制造方法
公开(公告)号：US07951522B2
公开(公告)日：2011-05-31
申请号：US11025591
申请日：2004-12-29
申请人： Toshiki Okui , Koichi Misumi
发明人： Toshiki Okui , Koichi Misumi
IPC分类号： G03C1/00 , G03F7/00
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0397
摘要： A chemically amplified positive photoresist composition for thick film that is used for forming a thick-film photoresist layer with a film thickness of 10 to 150 μm on top of a support, comprising (A) a compound that generates acid on irradiation with active light or radiation, (B) a resin that displays increased alkali solubility under the action of acid, and (C) an alkali-soluble resin, wherein the component (B) comprises a resin formed from a copolymer containing a structural unit (b1) with a specific structure.
摘要翻译：一种用于厚膜的化学放大型正性光致抗蚀剂组合物，其用于在支撑体顶部上形成膜厚度为10至150μm的厚膜光致抗蚀剂层，其包含（A）在活性光照射下产生酸的化合物或辐射，（B）在酸的作用下显示增加的碱溶性的树脂，和（C）碱溶性树脂，其中组分（B）包含由含有结构单元（b1）的共聚物形成的树脂，具体结构。

6. 发明授权

US07169532B2 Chemically amplified positive photoresist composition for thick film, thick-film photoresist laminated product, manufacturing method for thick-film resist pattern, and manufacturing method for connection terminal 有权
标题翻译：化学扩增用于厚膜，厚膜光致抗蚀剂层压产品的正性光致抗蚀剂组合物，厚膜抗蚀剂图案的制造方法和连接端子的制造方法
公开(公告)号：US07169532B2
公开(公告)日：2007-01-30
申请号：US11025589
申请日：2004-12-29
申请人： Toshiki Okui , Koichi Misumi , Koji Saito
发明人： Toshiki Okui , Koichi Misumi , Koji Saito
IPC分类号： G03F7/004 , G11B5/64 , B32B17/10
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0397 , Y10S430/106 , Y10T428/265 , Y10T428/269
摘要： A chemically amplified positive photoresist composition for thick film that is used for forming a thick-film photoresist layer with a film thickness of 10 to 150 μm on top of a support, comprising (A) a compound that generates acid on irradiation with active light or radiation, (B) a resin that displays increased alkali solubility under the action of acid, and (C) an alkali-soluble resin, wherein the component (B) comprises a resin formed from a copolymer containing a structural unit (b1) with a specific structure.
摘要翻译：一种用于厚膜的化学放大型正性光致抗蚀剂组合物，其用于在载体上形成膜厚度为10至150μm的厚膜光致抗蚀剂层，其包含（A）在活性光照射下产生酸的化合物或辐射，（B）在酸的作用下显示增加的碱溶性的树脂，和（C）碱溶性树脂，其中组分（B）包含由含有结构单元（b1）的共聚物形成的树脂，具体结构。

7. 发明授权

US07129018B2 Negative photoresist compositions for the formation of thick films, photoresist films and methods of forming bumps using the same 有权
公开(公告)号：US07129018B2
公开(公告)日：2006-10-31
申请号：US11258274
申请日：2005-10-26
申请人： Koji Saito , Kouichi Misumi , Toshiki Okui , Hiroshi Komano
发明人： Koji Saito , Kouichi Misumi , Toshiki Okui , Hiroshi Komano
IPC分类号： G03F7/038
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , Y10S430/111 , Y10S430/113
摘要： A negative photoresist composition is used for the formation of thick films and includes (A) a novolak resin, (B) a plasticizer, (C) a crosslinking agent and (D) an acid generator. The composition is applied onto a substrate and thereby yields a photoresist film 5 to 100 μm thick. Likewise, the composition is applied onto a substrate of an electronic part, is patterned, is plated and thereby yields a bump.

8. 发明申请

US20060210914A1 Positive photoresist composition and method of forming resist pattern 有权
标题翻译：正型光致抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US20060210914A1
公开(公告)日：2006-09-21
申请号：US10564510
申请日：2004-07-13
申请人： Yasuo Masuda , Toshiki Okui
发明人： Yasuo Masuda , Toshiki Okui
IPC分类号： G03C1/76 , G03C1/492
CPC分类号： G03F7/0226 , C08G14/04 , G03F7/023
摘要： There is provided a positive photoresist composition capable of forming a pattern with excellent resolution, excellent resistance to reflection off the substrate, and excellent perpendicularity. The positive photoresist composition comprises (A) an alkali-soluble novolak resin in which a portion of the hydrogen atoms of all the phenolic hydroxyl groups are substituted with 1,2-naphthoquinonediazidesulfonyl groups, and (B) a dissolution promoter represented by a general formula (b-1) and/or a general formula (b-11) shown below.
摘要翻译：提供了能够形成具有优异分辨率，优异的抗反射性的基板的极好的垂直性的正型光致抗蚀剂组合物。正型光致抗蚀剂组合物包含（A）其中所有酚羟基的一部分氢原子被1,2-萘醌二叠氮基磺酰基取代的碱溶性酚醛清漆树脂，（B）由通式（b-1）和/或下述通式（b-11）。

9. 发明申请

US20060183048A1 Positive photoresist composition and resist pattern formation 审中-公开
标题翻译：正光致抗蚀剂组合物和抗蚀剂图案形成
公开(公告)号：US20060183048A1
公开(公告)日：2006-08-17
申请号：US10568126
申请日：2004-08-19
申请人： Yasuo Masuda , Toshiki Okui
发明人： Yasuo Masuda , Toshiki Okui
IPC分类号： G03C5/18
CPC分类号： G03F7/023 , G03F7/0236
摘要： A means for increasing development velocity of a positive photoresist composition is provided which contains a photosensitive novolak resin formed by replacing some hydrogen atoms within those of all phenolic hydroxyl groups of alkali soluble novolak resin by 1,2-naphthoquinonediazide sulfonyl group. This means is positive photoresist composition and a formation method of a resist pattern using the composition which contains (A) a photosensitive novolak resin formed by replacing some hydrogen atoms within those of all phenolic hydroxyl groups of alkali soluble novolak resin by 1,2-naphthoquinonediazide sulfonyl group, which is dissolved in (B) propylene glycol alkyl ether acetate.
摘要翻译：提供了用于提高正性光致抗蚀剂组合物的显影速度的手段，其含有通过用1,2-萘醌二叠氮基磺酰基取代碱溶性酚醛清漆树脂的所有酚羟基的那些中的一些氢原子形成的感光酚醛清漆树脂。这是指使用该组合物的正型光致抗蚀剂组合物和抗蚀剂图案的形成方法，该组合物含有（A）通过用1,2-萘醌二叠氮化物替代碱溶性酚醛清漆树脂的所有酚羟基中的一些氢原子形成的感光酚醛清漆树脂磺酰基，其溶于（B）丙二醇烷基醚乙酸酯中。

10. 发明申请

US20060035169A1 Negative photoresist compositions for the formation of thick films, photoresist films and methods of forming bumps using the same 有权
公开(公告)号：US20060035169A1
公开(公告)日：2006-02-16
申请号：US11258273
申请日：2005-10-26
申请人： Koji Saito , Kouichi Misumi , Toshiki Okui , Hiroshi Komano
发明人： Koji Saito , Kouichi Misumi , Toshiki Okui , Hiroshi Komano
IPC分类号： G03C1/76
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , Y10S430/111 , Y10S430/113
摘要： A negative photoresist composition is used for the formation of thick films and includes (A) a novolak resin, (B) a plasticizer, (C) a crosslinking agent and (D) an acid generator. The composition is applied onto a substrate and thereby yields a photoresist film 5 to 100 μm thick. Likewise, the composition is applied onto a substrate of an electronic part, is patterned, is plated and thereby yields a bump.

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