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1. 发明授权

US06136505A Liquid coating composition for use in forming antireflective film and photoresist material using said antireflective film 有权
标题翻译：用于使用所述抗反射膜形成抗反射膜和光致抗蚀剂材料的液体涂料组合物
公开(公告)号：US06136505A
公开(公告)日：2000-10-24
申请号：US330001
申请日：1999-06-11
申请人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Hiroshi Komano , Toshimasa Nakayama
发明人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Hiroshi Komano , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/09 , G03F7/11 , H01L21/027
CPC分类号： G03F7/091
摘要： Disclosed herein is a liquid coating composition for use in forming an antireflective film comprising a mixture of a cyclic perfluoroalkyl polyether and a chain perfluoroalkyl polyether in a ratio of from 3:10 to 10:1 by weight, and a fluorocarbon organic solvent. Disclosed also herein is a photoresist material consisting of a photoresist layer and said antireflective film formed thereon using said liquid coating composition. The antireflective film remarkably reduces the standing-wave effect especially in the case where the photoresist layer of chemically amplified type is used. The antireflective film also has good film quality and film removability.
摘要翻译：本文公开了一种用于形成抗反射膜的液体涂料组合物，其包含按重量比计为3:10至10:1的环状全氟烷基聚醚和链全氟烷基聚醚的混合物，以及氟碳有机溶剂。此处还公开了由光致抗蚀剂层和在其上使用所述液体涂料组合物形成的所述抗反射膜组成的光致抗蚀剂材料。抗反射膜特别是在使用化学放大型光致抗蚀剂层的情况下，显着地降低了驻波效应。抗反射膜也具有良好的膜质量和膜去除性。

2. 发明授权

US06261745B1 Post-ashing treating liquid compositions and a process for treatment therewith 有权
标题翻译：后灰化处理液体组合物及其处理方法
公开(公告)号：US06261745B1
公开(公告)日：2001-07-17
申请号：US09323988
申请日：1999-06-02
申请人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Hiroshi Komano , Toshimasa Nakayama
发明人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Hiroshi Komano , Toshimasa Nakayama
IPC分类号： G03F740
CPC分类号： H01L21/02071 , G03F7/425 , G03F7/427 , H01L21/02052 , H01L21/31116 , H01L21/31138
摘要： Disclosed herein is a post-ashing treating liquid composition comprising a salt of hydrofluoric acid with a base free from metal ions, a water-soluble organic solvent, water, and an acetylene alcohol/alkylene oxide adduct. Disclosed also herein is a process for treatment with said treating liquid composition. For removal of resist residues such as modified photoresist films and metal depositions, the treating liquid composition and the treating process can be advantageously applied to the substrates having been dry-etched, followed by ashing under severe conditions, without corrosion on metal layers and damage to an organic SOG layer formed thereon.
摘要翻译：本文公开了一种后灰化处理液体组合物，其包含氢氟酸盐与不含金属离子的碱，水溶性有机溶剂，水和乙炔醇/烯化氧加合物。本文还公开了用所述处理液组合物进行处理的方法。为了除去抗蚀剂残留物如改性光致抗蚀剂膜和金属沉积物，处理液组合物和处理方法可以有利地应用于已经被干法蚀刻的基底上，随后在苛刻条件下灰化，而不会对金属层产生腐蚀和损坏在其上形成有机SOG层。

3. 发明授权

US6132928A Coating solution for forming antireflective coating film 失效
标题翻译：用于形成抗反射涂膜的涂布溶液
公开(公告)号：US6132928A
公开(公告)日：2000-10-17
申请号：US148997
申请日：1998-09-08
申请人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
发明人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
IPC分类号： G03F7/004 , C09D5/00 , G03F7/09 , G03F7/11 , H01L21/027 , G03C1/72
CPC分类号： G03F7/091 , Y10S430/106 , Y10S430/121
摘要： A coating solution for forming an antireflective coating film making it possible to form a uniform coating film, which sustains an antireflective effect and shows no unevenness of coating or little surface discontinuity, even in a small application dose and thus ensuring the production of semiconductor devices at a low cost and a high efficiency. The coating solution for forming an antireflective coating film is one to be used for forming an anti-interference film on a resist film, characterized in that the coating solution gives a contact angle to the resist film of 15.degree. or below, when applied onto the resist film.
摘要翻译：一种用于形成抗反射涂膜的涂布溶液，使得可以形成均匀的涂膜，即使在小的涂布剂量下也能保持抗反射效果，并且不显示涂层不均匀或少量的表面不连续性，从而确保半导体器件的生产成本低，效率高。用于形成抗反射涂膜的涂布溶液是用于在抗蚀剂膜上形成抗干扰膜的涂布溶液，其特征在于，当涂布在抗蚀剂膜上时，涂布溶液与抗蚀剂膜接触角为15°或更低抗拒膜。

4. 发明授权

US5792274A Remover solution composition for resist and method for removing resist using the same 失效
标题翻译：去除抗蚀剂的溶液组合物及使用其去除抗蚀剂的方法
公开(公告)号：US5792274A
公开(公告)日：1998-08-11
申请号：US747898
申请日：1996-11-13
申请人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
发明人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
IPC分类号： C11D7/10 , C11D7/26 , C11D7/32 , C11D7/50 , C11D17/08 , G03F7/42 , H01L21/027 , B08B3/04 , B08B3/08
CPC分类号： G03F7/423 , G03F7/425
摘要： A remover solution composition for resist which comprises (a) a salt of hydrofluoric acid with a metal-free base, (b) a water-soluble organic solvent, and (c) water and optionally (d) an anticorrosive, and has a pH of 5 to 8. A method for removing resist which comprises the steps of (I) forming a resist layer on a substrate having a metal film, (II) light-exposing the resist layer through a mask pattern and subsequently developing the resist layer to form a resist pattern, and (III) dry-etching the substrate using the resist pattern as a mask and then removing the unnecessary resist and modified resist film with the remover solution composition.
摘要翻译：一种抗蚀剂去除剂溶液组合物，其包含（a）氢氟酸与无金属碱的盐，（b）水溶性有机溶剂和（c）水和任选的（d）防腐蚀剂，并具有pH （I）在具有金属膜的基板上形成抗蚀剂层的步骤，（II）通过掩模图案曝光抗蚀剂层，然后将抗蚀剂层显影到形成抗蚀剂图案，（III）使用抗蚀剂图案作为掩模对基板进行干蚀刻，然后用去除剂溶液组合物除去不需要的抗蚀剂和改性的抗蚀剂膜。

5. 发明授权

US06815151B2 Rinsing solution for lithography and method for processing substrate with the use of the same 有权
标题翻译：用于光刻的冲洗溶液和使用它的基板处理方法
公开(公告)号：US06815151B2
公开(公告)日：2004-11-09
申请号：US09877124
申请日：2001-06-11
申请人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
发明人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
IPC分类号： G03F742
CPC分类号： G03F7/42 , G03F7/425
摘要： The present invention provides a rinsing solution for lithography with which finely processed parts of a resist pattern can be well rinsed without corroding a metallic film made of Al, Al—Si, Al—Si—Cu, etc. and which is economically advantageous and has a high safety; and a method for processing a substrate with the use of the same. The rinsing solution contains at least one selected from the group consisting of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether and ethyl lactate.
摘要翻译：本发明提供了一种用于光刻的冲洗溶液，其中抗蚀剂图案的精细加工部分可以很好地冲洗而不腐蚀由Al，Al-Si，Al-Si-Cu等制成的金属膜，并且在经济上有利并具有安全性高以及使用该方法处理基板的方法。冲洗溶液含有选自乙二醇单甲醚，乙二醇单乙醚，丙二醇单甲醚，丙二醇单乙醚和乳酸乙酯中的至少一种。

6. 发明授权

US06291142B1 Photoresist stripping liquid compositions and a method of stripping photoresists using the same 有权
标题翻译：光刻胶剥离液体组合物和使用其剥离光致抗蚀剂的方法
公开(公告)号：US06291142B1
公开(公告)日：2001-09-18
申请号：US09599729
申请日：2000-06-23
申请人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
发明人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
IPC分类号： G03C1124
CPC分类号： G03F7/425
摘要： The present invention relates to photoresist stripping liquid compositions comprising (a) 2-30 wt % of a hydroxylamine, (b) 2-35 wt % of water, (c) 25-40 wt % of at least one member selected from monoethanolamine and diethanolamine, (d) 20-32 wt % of dimethyl sulfoxide and (e) 2-20 wt % of an aromatic hydroxy compound and a method of stripping photoresists with the use of the same. The present invention provides photoresist stripping liquid compositions which are, even at higher treating temperatures, excellent in the capabilities of both stripping photoresist films and modified films and effective in prevention of the corrosion that would otherwise occur in substrates overlaid with Al or Al alloy layers or Ti layers, and a method for stripping photoresists by using the same.
摘要翻译：本发明涉及光致抗蚀剂剥离液体组合物，其包含（a）2-30重量％的羟胺，（b）2-35重量％的水，（c）25-40重量％的至少一种选自单乙醇胺和二乙醇胺，（d）20-32重量％的二甲基亚砜和（e）2-20重量％的芳族羟基化合物，以及使用它们剥离光致抗蚀剂的方法。本发明提供了光刻胶剥离液体组合物，即使在更高的处理温度下，剥离光致抗蚀剂膜和改性膜的性能也是优异的，并且有效地防止了否则会发生在覆盖有Al或Al合金层的基材中的腐蚀，或者 Ti层，以及通过使用它们剥离光致抗蚀剂的方法。

7. 发明授权

US06225030B1 Post-ashing treating method for substrates 有权
标题翻译：基板后灰化处理方法
公开(公告)号：US06225030B1
公开(公告)日：2001-05-01
申请号：US09260051
申请日：1999-03-02
申请人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
发明人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
IPC分类号： G03F740
CPC分类号： G03F7/425
摘要： A post-ashing treating method for substrates comprising the following steps: forming a photoresist layer on a substrate having metallic layer(s) thereon; selectively exposing the photoresist layer to light; developing the light-exposed photoresist layer to provide a photoresist pattern; etching the substrate through the photoresist pattern as a mask pattern to form a metallic wired pattern; ashing the photoresist pattern; and after the completion of the ashing, bringing the substrate into contact with a treating liquid composition to thereby treat the substrate; characterized in that said treating liquid composition is one which comprises: (a) 0.5-10 wt % of a lower alkyl quaternary ammonium salt; (b) 1-50 wt % of a polyhydric alcohol; and (c) water as the balance. The post-ashing treating method for substrates provided by the present invention makes it possible to efficiently remove residues formed by dry etching followed by ashing under strict conditions and to achieve favorable corrosion-inhibiting effects on the substrates.
摘要翻译：一种用于基板的后灰化处理方法，包括以下步骤：在其上具有金属层的基板上形成光致抗蚀剂层; 选择性地将光致抗蚀剂层曝光; 显影曝光的光致抗蚀剂层以提供光致抗蚀剂图案; 通过光致抗蚀剂图案蚀刻基板作为掩模图案以形成金属布线图案; 灰化光致抗蚀剂图案; 并且在灰化完成之后，使基板与处理液体组合物接触，从而处理基板; 其特征在于所述处理液体组合物是包含：（a）0.5-10重量％的低级烷基季铵盐的组合物; （b）1-50重量％的多元醇; 和（c）水作为平衡。通过本发明提供的基板的后灰化处理方法，可以有效地除去由干蚀刻形成的残留物，在严格条件下进行灰化，并对基板实现良好的腐蚀抑制效果。

8. 发明授权

US5968848A Process for treating a lithographic substrate and a rinse solution for the treatment 失效
标题翻译：用于处理平版印刷基材和用于处理的冲洗溶液的方法
公开(公告)号：US5968848A
公开(公告)日：1999-10-19
申请号：US998378
申请日：1997-12-24
申请人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
发明人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
IPC分类号： G03F7/42 , H01L21/02 , H01L21/306 , H01L21/3213 , B08B3/08
CPC分类号： H01L21/02071 , G03F7/423 , G03F7/425 , H01L21/02052 , Y10S438/906
摘要： This invention relates to a process for rinsing a substrate which has been provided with a desired resist pattern and subjected to an etching treatment, and optionally, subsequent ashing treatment, said process including the steps of: (I) treating said resist pattern with a remover solution which contains, as a principal ingredient, a salt of hydrofluoric acid and a metallic-ion-free base; (II) rinsing said substrate with a rinse solution for lithography which contains ethylene glycol and/or propylene glycol, and a water-soluble organic solvent other than said glycol; and (III) washing said substrate with water.
摘要翻译：本发明涉及一种漂洗已经提供了所需抗蚀剂图案并进行蚀刻处理的衬底的方法，并且可选地，随后的灰化处理，所述方法包括以下步骤：（I）用去除剂处理所述抗蚀剂图案溶液，其含有氢氟酸和无金属离子的碱的主要成分; （II）用含有乙二醇和/或丙二醇的光刻用冲洗溶液和除所述二醇以外的水溶性有机溶剂冲洗所述基材; 和（III）用水洗涤所述基材。

9. 发明授权

US5795702A Photoresist stripping liquid compositions and a method of stripping photoresists using the same 失效
标题翻译：光刻胶剥离液体组合物和使用其剥离光致抗蚀剂的方法
公开(公告)号：US5795702A
公开(公告)日：1998-08-18
申请号：US717778
申请日：1996-09-24
申请人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
发明人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
IPC分类号： C11D7/32 , C11D7/50 , G03F7/42 , H01L21/027 , H01L21/304 , G03C5/00 , C11D9/04
CPC分类号： G03F7/425
摘要： The improved photoresist stripping liquid composition comprises (a) 2-30 wt % of a hydroxylamine, (b) 2-35 wt % of water, (c) 2-20 wt % of an amine having an acid dissociation constant (pKa) of 7.5-13 in aqueous solution at 25.degree. C., (d) 35-80 wt % of a water-soluble organic solvent and (e) 2-20 wt % of a corrosion inhibitor and the. method using this composition are capable of not only efficient removal of modified photoresist films that have been formed by dry etching, ashing, ion implantation and other treatments under hostile conditions but also effective prevention of the corrosion that would otherwise occur in substrates irrespective of whether they are overlaid with Al or Al alloy layers or Ti layers.
摘要翻译：改进的光致抗蚀剂剥离液体组合物包含（a）2-30重量％的羟胺，（b）2-35重量％的水，（c）2-20重量％的具有酸解离常数（pKa）的胺在25℃的水溶液中为7.5-13，（d）35-80重量％的水溶性有机溶剂和（e）2-20重量％的缓蚀剂，使用该组合物的方法不仅能够有效去除在恶劣条件下通过干法蚀刻，灰化，离子注入和其它处理形成的改性光致抗蚀剂膜，而且可以有效地防止否则会在基材中发生的腐蚀，而不管它们是否覆盖有Al或Al合金层或Ti层。

10. 发明授权

US06225034B1 Photoresist stripping liquid compositions and a method of stripping photoresists using the same 有权
公开(公告)号：US06225034B1
公开(公告)日：2001-05-01
申请号：US09173005
申请日：1998-10-15
申请人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
发明人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
IPC分类号： G03F742
CPC分类号： G03F7/425
摘要： The present invention relates to photoresist stripping liquid compositions comprising (a) 2-30 wt % of a hydroxylamine, (b) 2-35 wt % of water, (c) 25-40 wt % of at least one member selected from monoethanolamine and diethanolamine, (d) 20-32 wt % of dimethyl sulfoxide and (e) 2-20 wt % of an aromatic hydroxy compound and a method of stripping photoresists with the use of the same. The present invention provides photoresist stripping liquid compositions which are, even at higher treating temperatures, excellent in the capabilities of both stripping photoresist films and modified films and effective in prevention of the corrosion that would otherwise occur in substrates overlaid with Al or Al alloy layers or Ti layers, and a method for stripping photoresists by using the same.

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