专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20070190266A1 Water vapor passivation of a wall facing a plasma 有权
标题翻译：面对等离子体的水的水蒸气钝化
公开(公告)号：US20070190266A1
公开(公告)日：2007-08-16
申请号：US11351676
申请日：2006-02-10
申请人： Xinyu Fu
发明人： Xinyu Fu
IPC分类号： B08B6/00 , B08B9/00 , C23C16/00 , H05H1/24
CPC分类号： H01L21/76814 , H01L21/02063
摘要： A chamber passivation method particularly useful for hydrogen plasma cleaning of low-k dielectrics prior to coating a barrier layer into a via hole with hydrogen radicals are provided from a remote plasma source. For each wafer, the chamber is passivated with water vapor (or other gas even more chemabsorbed on plasma facing walls) passed through the remote plasma source prior to the ignition of the hydrogen plasma. The water vapor is absorbed on walls, such as alumina and quartz parts of the remote plasma source, and forms a protective mono-layer that endures sufficiently long to protect the walls during the generation of the hydrogen plasma. Thereby, the plasma facing walls, particularly of a dielectric such as alumina, are protected from etching.
摘要翻译：从远程等离子体源提供在将阻挡层涂覆到具有氢自由基的通孔中之前特别可用于低k电介质的氢等离子体清洗的室钝化方法。对于每个晶片，在氢等离子体点燃之前，通过远程等离子体源的水蒸气（或者在面向等离子体的壁上更多化学吸附的其它气体）钝化室。水蒸汽被吸收在诸如远距离等离子体源的氧化铝和石英部分的壁上，并且形成足够长的保护单层，以在氢等离子体的产生期间保护壁。因此，保护等离子体面对的壁，特别是电介质如氧化铝，防止蚀刻。

12. 发明授权

US5491284A Nude mouse model for neoplastic disease 失效
标题翻译：裸鼠模型为肿瘤性疾病
公开(公告)号：US5491284A
公开(公告)日：1996-02-13
申请号：US169735
申请日：1993-12-17
申请人： Ann Monosov , Xinyu Fu
发明人： Ann Monosov , Xinyu Fu
IPC分类号： A01K67/027 , C12N5/09 , C12N15/85 , A61K35/00 , A61K49/00
CPC分类号： A01K67/0271 , C12N5/0693
摘要： A nude mouse model for human neoplastic disease having histologically intact human neoplastic tissue transplanted onto an organ of the mouse which corresponds to the human organ from which the tissue is obtained.
摘要翻译：用于人肿瘤性疾病的裸小鼠模型，其具有移植到小鼠器官上的组织学上完整的人肿瘤组织，其对应于获得组织的人器官。

13. 发明申请

US20130260555A1 METHOD OF ENABLING SEAMLESS COBALT GAP-FILL 有权
标题翻译：实现无缝煤覆盖的方法
公开(公告)号：US20130260555A1
公开(公告)日：2013-10-03
申请号：US13786644
申请日：2013-03-06
申请人： Bhushan N. ZOPE , Avgerinos V. GELATOS , Bo ZHENG , Yu LEI , Xinyu FU , Srinivas GANDIKOTA , Sang-Ho YU , Mathew ABRAHAM
发明人： Bhushan N. ZOPE , Avgerinos V. GELATOS , Bo ZHENG , Yu LEI , Xinyu FU , Srinivas GANDIKOTA , Sang-Ho YU , Mathew ABRAHAM
IPC分类号： H01L21/48
CPC分类号： H01L21/76879 , H01L21/02057 , H01L21/2855 , H01L21/28556 , H01L21/4846 , H01L21/76814 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76877 , H01L21/76883 , H01L23/53209 , H01L23/5329 , H01L29/66621
摘要： Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.
摘要翻译：提供了在半导体器件的接触结构中沉积接触金属层的方法。在一个实施例中，提供了一种在半导体器件中沉积用于形成接触结构的接触金属层的方法。该方法包括进行循环金属沉积工艺，以将接触金属层沉积在衬底上并退火设置在衬底上的接触金属层。循环金属沉积工艺包括将衬底暴露于沉积前体气体混合物以将接触金属层的一部分沉积在衬底上，将接触金属层的该部分暴露于等离子体处理工艺，并重复将衬底暴露于沉积前体气体混合物，并将接触金属层的部分暴露于等离子体处理工艺，直到实现接触金属层的预定厚度。

14. 发明申请

US20120121799A1 Method For Segregating The Alloying Elements And Reducing The Residue Resistivity Of Copper Alloy Layers 有权
标题翻译：分离合金元素并降低铜合金层残留电阻率的方法
公开(公告)号：US20120121799A1
公开(公告)日：2012-05-17
申请号：US12945445
申请日：2010-11-12
申请人： Xinyu Fu , Jick M. Yu
发明人： Xinyu Fu , Jick M. Yu
IPC分类号： H05K3/22
CPC分类号： H01L23/53233 , H01L21/76831 , H01L21/76843 , H01L21/76849 , H01L21/76855 , H01L21/76867 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Methods for forming interconnect or interconnections on a substrate for use in a microelectric device are disclosed. In one or more embodiments, the method includes depositing an alloy layer comprising Cu and an alloying element, for, example, Mn, in a dielectric layer and segregating or diffusing the alloying element from the bulk Cu portion of the alloy layer. In one or more embodiments, the method includes annealing the alloy layer in an atomic hydrogen atmosphere. After annealing, the alloy layer exhibits a resistivity that is substantially equivalent to the resistivity of a pure Cu layer.
摘要翻译：公开了在用于微电子器件的衬底上形成互连或互连的方法。在一个或多个实施例中，该方法包括在电介质层中沉积包含Cu和合金元素（例如Mn）的合金层，并将合金元素与合金层的本体Cu部分分离或扩散。在一个或多个实施例中，该方法包括在原子氢气氛中退火合金层。退火后，合金层的电阻率基本上等于纯Cu层的电阻率。

15. 发明授权

US07704887B2 Remote plasma pre-clean with low hydrogen pressure 有权
标题翻译：远程等离子体预清洁，氢气压力低
公开(公告)号：US07704887B2
公开(公告)日：2010-04-27
申请号：US11334803
申请日：2006-01-17
申请人： Xinyu Fu , John Forster , Jick Yu , Ajay Bhatnagar , Praburam Gopalraja
发明人： Xinyu Fu , John Forster , Jick Yu , Ajay Bhatnagar , Praburam Gopalraja
IPC分类号： B08B3/00 , H01L21/302
CPC分类号： H01L21/02063 , G03F7/427 , H01J37/32357 , H01J37/32422 , H01J37/3266 , H01L21/02068 , H01L21/67028 , H01L21/67069 , H01L21/76814
摘要： A plasma cleaning method particularly useful for removing photoresist and oxide residue from a porous low-k dielectric with a high carbon content prior to sputter deposition. A remote plasma source produces a plasma primarily of hydrogen radicals. The hydrogen pressure may be kept relatively low, for example, at 30 milliTorr. Optionally, helium may be added to the processing gas with the hydrogen partial pressure held below 150 milliTorr. Superior results are obtained with 70% helium in 400 milliTorr of hydrogen and helium. Preferably, an ion filter, such as a magnetic filter, removes hydrogen and other ions from the output of the remote plasma source and a supply tube from the remote plasma source includes a removable dielectric liner in combination with dielectric showerhead and manifold liner.
摘要翻译：一种等离子体清洗方法，特别适用于在溅射沉积之前从具有高碳含量的多孔低k电介质中除去光致抗蚀剂和氧化物残留物。远程等离子体源产生主要为氢自由基的等离子体。氢气压力可以保持相对较低，例如在30毫乇。任选地，氦气可以被加到处理气体中，氢分压保持在150毫乇以下。在400毫乇的氢气和氦气中，70％的氦气可获得卓越的结果。优选地，诸如磁性过滤器的离子过滤器从远程等离子体源的输出中除去氢和其它离子，并且来自远程等离子体源的供应管包括与介电喷头和歧管衬套组合的可移除绝缘衬垫。

16. 发明申请

US20100099251A1 METHOD FOR NITRIDATION PRETREATMENT 审中-公开
标题翻译：硝化预处理方法
公开(公告)号：US20100099251A1
公开(公告)日：2010-04-22
申请号：US12256235
申请日：2008-10-22
申请人： XINYU FU , Jick M. Yu
发明人： XINYU FU , Jick M. Yu
IPC分类号： H01L21/768
CPC分类号： H01L21/76826 , H01L21/76814 , H01L21/76831 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a method for fabricating a damascene structure is provided which includes exposing a dielectric surface on a substrate to a nitrogen plasma to form a nitrided dielectric layer, wherein the dielectric surface contains a plurality of openings therein, depositing a barrier layer on the nitrided dielectric surface, and depositing a seed layer over the barrier layer. In some examples, the nitrogen plasma is formed from nitrogen gas or a mixture of nitrogen gas and hydrogen gas. The nitrogen plasma may be formed in a barrier deposition chamber or by a reactive preclean chamber. In another embodiment, a bulk layer may be deposited to fill the openings after depositing the seed layer. In one example, the bulk layer may contain copper, tungsten, or alloys thereof, and be deposited by an electrochemical plating process.
摘要翻译：在一个实施例中，提供了一种用于制造镶嵌结构的方法，其包括将衬底上的电介质表面暴露于氮等离子体以形成氮化介电层，其中电介质表面包含多个开口，在其上沉积阻挡层氮化电介质表面，并且在阻挡层上沉积种子层。在一些实例中，氮等离子体由氮气或氮气和氢气的混合物形成。氮等离子体可以形成在阻挡沉积室中或通过反应性预清洗室形成。在另一个实施例中，沉积种子层之后可沉积体层以填充开口。在一个实例中，本体层可以包含铜，钨或其合金，并且通过电化学电镀工艺沉积。

17. 发明授权

US07658802B2 Apparatus and a method for cleaning a dielectric film 有权
标题翻译：用于清洁电介质膜的装置和方法
公开(公告)号：US07658802B2
公开(公告)日：2010-02-09
申请号：US11284775
申请日：2005-11-22
申请人： Xinyu Fu , John Forster , Wei W. Wang
发明人： Xinyu Fu , John Forster , Wei W. Wang
IPC分类号： B08B6/00
CPC分类号： H01L21/02063 , H01J37/32357 , H01J37/32422 , H01J37/3266
摘要： An apparatus and a method of cleaning a dielectric film are provided in the present invention. In one embodiment, an apparatus of cleaning a dielectric film the apparatus includes a chamber body adapted to support a substrate therein, a remote plasma source adapted to provide a plurality of reactive radicals to the chamber body, a passage coupling the remote plasma source to the chamber body, and at least one magnet disposed adjacent the passage. In another embodiment, a method of cleaning a dielectric film that includes providing a substrate having an at least partially exposed dielectric layer disposed in a process chamber, generating a plurality of reactive radicals in a remote plasma source, flowing the reactive radicals from the remote plasma source into the process chamber through a passage having at least one magnet disposed adjacent the passage, and magnetically filtering the reactive radicals passing through the passage.
摘要翻译：在本发明中提供了一种清洁电介质膜的装置和方法。在一个实施例中，一种清洁电介质膜的装置包括适于在其中支撑衬底的室主体，适于向室主体提供多个反应性基团的远程等离子体源，将远程等离子体源耦合到室主体，以及邻近通道设置的至少一个磁体。在另一个实施例中，一种清洁电介质膜的方法，该方法包括提供具有设置在处理室中的至少部分暴露的电介质层的衬底，在远程等离子体源中产生多个反应性基团，使来自远端等离子体的反应性基团通过具有邻近通道设置的至少一个磁体的通道进入处理室，并对穿过通道的反应性基团进行磁过滤。

18. 发明申请

US20090017227A1 Remote Plasma Source for Pre-Treatment of Substrates Prior to Deposition 有权
标题翻译：远程等离子体源在沉积前预处理基板
公开(公告)号：US20090017227A1
公开(公告)日：2009-01-15
申请号：US11776131
申请日：2007-07-11
申请人： Xinyu FU , Jick M. YU
发明人： Xinyu FU , Jick M. YU
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： C23C16/0245 , H01J37/32357
摘要： A plasma processing chamber particularly useful for pre-treating low-k dielectric films and refractory metal films subject to oxidation prior to deposition of other layers. A remote plasma source (RPS) excites a processing gas into a plasma and delivers it through a supply tube to a manifold in back of a showerhead faceplate. The chamber is configured for oxidizing and reducing plasmas in the same or different processes when oxygen and hydrogen are selectively supplied to the RPS. The supply tube and showerhead may be formed of dielectric oxides which may be passivated by a water vapor plasma from the remote plasma source. In one novel process, a protective hydroxide coating is formed on refractory metals by alternating neutral plasmas of hydrogen and oxygen.
摘要翻译：一种等离子体处理室，特别适用于在沉积其它层之前预处理低k电介质膜和难以处理的金属薄膜。远程等离子体源（RPS）将处理气体激发到等离子体中并将其通过供应管输送到喷头面板背面的歧管。当氧气和氢气选择性地供应给RPS时，该室被配置用于在相同或不同的过程中氧化和还原等离子体。供应管和喷头可以由介电氧化物形成，其可以由远程等离子体源的水蒸汽等离子体钝化。在一个新颖的方法中，通过交替的氢和氧的中性等离子体在难熔金属上形成保护性氢氧化物涂层。

19. 发明申请

US20070113868A1 Apparatus and a method for cleaning a dielectric film 有权
标题翻译：用于清洁电介质膜的装置和方法
公开(公告)号：US20070113868A1
公开(公告)日：2007-05-24
申请号：US11284775
申请日：2005-11-22
申请人： Xinyu Fu , John Forster , Wei Wang
发明人： Xinyu Fu , John Forster , Wei Wang
IPC分类号： B08B6/00
CPC分类号： H01L21/02063 , H01J37/32357 , H01J37/32422 , H01J37/3266
摘要： An apparatus and a method of cleaning a dielectric film are provided in the present invention. In one embodiment, an apparatus of cleaning a dielectric film the apparatus includes a chamber body adapted to support a substrate therein, a remote plasma source adapted to provide a plurality of reactive radicals to the chamber body, a passage coupling the remote plasma source to the chamber body, and at least one magnet disposed adjacent the passage. In another embodiment, a method of cleaning a dielectric film that includes providing a substrate having an at least partially exposed dielectric layer disposed in a process chamber, generating a plurality of reactive radicals in a remote plasma source, flowing the reactive radicals from the remote plasma source into the process chamber through a passage having at least one magnet disposed adjacent the passage, and magnetically filtering the reactive radicals passing through the passage.
摘要翻译：在本发明中提供了一种清洁电介质膜的装置和方法。在一个实施例中，一种清洁电介质膜的装置包括适于在其中支撑衬底的室主体，适于向室主体提供多个反应性基团的远程等离子体源，将远程等离子体源耦合到室主体，以及邻近通道设置的至少一个磁体。在另一个实施例中，一种清洁电介质膜的方法，该方法包括提供具有设置在处理室中的至少部分暴露的电介质层的衬底，在远程等离子体源中产生多个反应性基团，使来自远端等离子体的反应性基团通过具有邻近通道设置的至少一个磁体的通道进入处理室，并对穿过通道的反应性基团进行磁过滤。

20. 发明授权

US5569812A Nude mouse model for human neoplastic disease 失效
标题翻译：人类肿瘤性疾病的裸鼠模型
公开(公告)号：US5569812A
公开(公告)日：1996-10-29
申请号：US459730
申请日：1995-06-02
申请人： Ann Monosov , Xinyu Fu
发明人： Ann Monosov , Xinyu Fu
IPC分类号： A01K67/027 , C12N5/09 , C12N15/85 , A61K35/00 , A61K49/00
CPC分类号： A01K67/0271 , C12N5/0693
摘要： A nude mouse model for human neoplastic disease having histologically intact human neoplastic tissue transplanted onto an organ of the mouse which corresponds to the human organ from which the tissue is obtained.
摘要翻译：用于人肿瘤性疾病的裸小鼠模型，其具有移植到小鼠器官上的组织学上完整的人肿瘤组织，其对应于获得组织的人器官。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式