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11. 发明授权

US07443707B2 Magnetic random access memory array with free layer locking mechanism and method of its use 失效
标题翻译：磁性随机存取存储阵列具有自由层锁定机制及其使用方法
公开(公告)号：US07443707B2
公开(公告)日：2008-10-28
申请号：US11732073
申请日：2007-04-02
申请人： Yimin Guo , Po-Kang Wang , Xizeng Shi , Tai Min
发明人： Yimin Guo , Po-Kang Wang , Xizeng Shi , Tai Min
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method of using an MTJ MRAM cell element having two magnetization states of greater and lesser stability. During switching, the free layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with a SAL (soft adjacent layer), which is a layer of soft magnetic material formed on an adjacent current carrying line, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.
摘要翻译：一种使用具有较高和较小稳定性的两种磁化状态的MTJ MRAM单元元件的方法。在切换期间，自由层首先通过字线电流处于较不稳定的状态，使得小的位线电流可以切换其磁化方向。在切换之后，由于与在相邻的载流线上形成的软磁材料层的SAL（软相邻层）的静磁相互作用的结果，状态恢复到更稳定的形式，这防止了在相邻的载流线上形成的软磁材料层它实际上并没有被选中，也提供了抗热搅拌的稳定性。

12. 发明申请

US20080253025A1 METHOD AND APPARATUS FOR PROVIDING AN ADDITIONAL GROUND PAD AND ELECTRIC AL CONNECTION FOR GROUNDING A MAGNETIC RECORDING HEAD 有权
标题翻译：用于提供附加接地垫的方法和装置以及用于接地磁记录头的电气连接
公开(公告)号：US20080253025A1
公开(公告)日：2008-10-16
申请号：US12145464
申请日：2008-06-24
申请人： Yen FU , Ellis CHA , Po-Kang WANG , Hong TIAN , Manuel HERNANDEZ , Yaw-Shing TANG , Ben HU
发明人： Yen FU , Ellis CHA , Po-Kang WANG , Hong TIAN , Manuel HERNANDEZ , Yaw-Shing TANG , Ben HU
IPC分类号： G11B5/60
CPC分类号： H05K3/3442 , B24B37/00 , B24D18/00 , G11B5/4853 , H05K1/0215 , H05K2201/10727 , Y02P70/613
摘要： Method and apparatus are presented for electrically coupling a slider to ground. In one embodiment, a bonding pad is provided on a side of the slider body separate from the bonding pad(s) used for read/write signals. This separate bonding pad is electrically coupled within the slider body to components that are to be coupled to ground. A separate conductor provided on the suspension (e.g., a trace, a flex circuit, etc.) may be electrically coupled to the separate bonding pad via gold ball bonding. The conductor is also coupled to ground in the hard-disk drive device (e.g., via the preamplifier). The use of the separated bonding pad and trace may negate the need to use a conductive adhesive to electrically ground the slider via its attachment to the tongue of a slider.
摘要翻译：呈现用于将滑块电耦合到地面的方法和装置。在一个实施例中，接合焊盘设置在与用于读/写信号的接合焊盘分开的滑块体的一侧上。该单独的接合焊盘在滑块体内电耦合到要耦合到地面的部件。设置在悬架上的单独的导体（例如，迹线，柔性电路等）可以通过金球接合电耦合到单独的接合焊盘。导体也耦合到硬盘驱动装置中的接地（例如，经由前置放大器）。使用分离的接合焊盘和迹线可能会使得不需要使用导电粘合剂来将滑块经由其附接件电连接到滑块的舌部。

13. 发明申请

US20080160641A1 Multi-state thermally assisted storage 有权
标题翻译：多状态热辅助存储
公开(公告)号：US20080160641A1
公开(公告)日：2008-07-03
申请号：US12012576
申请日：2008-02-04
申请人： Tai Min , Po-Kang Wang
发明人： Tai Min , Po-Kang Wang
IPC分类号： H01L21/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , G11C11/1675 , G11C11/5607
摘要： A process for manufacturing a random access memory cell, that is capable of storing multiple information states in a single physical bit, is described. The basic structure combines a conventional MTJ with a reference stack that is magnetostatically coupled to the MTJ. The MTJ is read in the usual way but data is written and stored in the reference stack. Through use of two bit lines, the direction of magnetization of the free layer can be changed in small increments each unique direction representing a different information state.
摘要翻译：描述了能够在单个物理位中存储多个信息状态的随机存取存储器单元的制造过程。基本结构将传统的MTJ与静磁耦合到MTJ的参考堆叠相结合。 MTJ以通常的方式读取，但是数据被写入并存储在参考堆栈中。通过使用两个位线，自由层的磁化方向可以以小的增量改变每个独特的方向代表不同的信息状态。

14. 发明授权

US07369376B2 Amorphous layers in a magnetic tunnel junction device 失效
标题翻译：磁性隧道结装置中的非晶层
公开(公告)号：US07369376B2
公开(公告)日：2008-05-06
申请号：US11080867
申请日：2005-03-15
申请人： Yimin Guo , Tai Min , Po-Kang Wang
发明人： Yimin Guo , Tai Min , Po-Kang Wang
IPC分类号： G11B5/39
CPC分类号： G11C11/15
摘要： An improved TMR device is disclosed. The ferromagnetic layers of the device, particularly those that contact the dielectric tunneling layer have an amorphous structure as well as a minimum thickness (of about 15 Å). A preferred material for contacting the dielectric layer is CoFeB. Ways of overcoming problems relating to magnetostriction are disclosed and a description of a process for manufacturing the device is included.
摘要翻译：公开了一种改进的TMR装置。器件的铁磁层，特别是接触介电隧穿层的铁磁层具有无定形结构以及最小厚度（约15）。用于接触电介质层的优选材料是CoFeB。公开了克服与磁致伸缩相关的问题的方法，并且描述了用于制造该装置的方法。

15. 发明授权

US07321519B2 Adaptive algorithm for MRAM manufacturing 失效
标题翻译： MRAM制造的自适应算法
公开(公告)号：US07321519B2
公开(公告)日：2008-01-22
申请号：US11485195
申请日：2006-07-12
申请人： Hsu Kai Yang , Xi Zeng Shi , Po-Kang Wang , Bruce Yang
发明人： Hsu Kai Yang , Xi Zeng Shi , Po-Kang Wang , Bruce Yang
IPC分类号： G11C7/00
CPC分类号： G11C14/0081 , G11C11/1659 , G11C11/1675 , G11C29/02 , G11C29/08 , G11C29/50
摘要： Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.
摘要翻译：磁性随机存取存储器（MRAM）可以与静态随机存取存储器（SRAM）一样快速编程和读取，并且具有电可擦除可编程只读存储器（EEPROM），闪存EEPROM或一次可编程（OTP）的非易失性特性）EPROM。由于制造过程的随机性，MRAM单元中的磁隧道结（MTJ）将需要不同的行和列电流组合来编程，而不会干扰其他单元。基于用于编程的自适应电流源，本公开教导了用于从MRAM生成EEPROM，FLASH EEPROM或OTP EPROM的存储器的方法，设计，测试算法和制造流程。

16. 发明授权

US07304360B2 Method of forming super-paramagnetic cladding material on conductive lines of MRAM devices 失效
标题翻译：在MRAM器件的导线上形成超顺磁覆层材料的方法
公开(公告)号：US07304360B2
公开(公告)日：2007-12-04
申请号：US11179251
申请日：2005-07-12
申请人： Yimin Guo , Po-Kang Wang
发明人： Yimin Guo , Po-Kang Wang
IPC分类号： H01L29/82
CPC分类号： G11C11/16
摘要： A super-paramagnetic cladding layer formed on from 1 to 3 sides of a conductive line in a magnetic device is disclosed. The cladding layer is made of “x” ML/SL stacks in which x is between 5 and 50, SL is an amorphous AlOx seed layer, and ML is a composite with a soft magnetic layer comprised of discontinuous particles less than 2 nm in size on the seed layer and a capping layer of Ru, Ta, or Cu on the soft magnetic layer. Fringing fields and hysteresis effects from continuous ferromagnetic cladding layers associated with switching the magnetic state of an adjacent MTJ are totally eliminated because of the super-paramagnetic character of the soft magnetic layer at room temperature. The soft magnetic layer has near zero magnetostriction, very high susceptibility, and may be made of Ni˜80Fe˜20, Ni˜30Fe˜70, Co˜90Fe˜10, or CoNiFe.
摘要翻译：公开了一种形成在磁性装置中的导线的1至3侧的超顺磁覆层。包层由“x”ML / SL堆叠制成，其中x在5和50之间，SL是无定形AlO x种子层，ML是具有由以下组成的软磁性层的复合材料：在种子层上尺寸小于2nm的不连续粒子和软磁层上的Ru，Ta或Cu的覆盖层。由于在室温下软磁性层的超顺磁特性，完全消除了与切换相邻MTJ的磁状态相关联的连续铁磁覆层的起始场和滞后效应。软磁性层具有接近零的磁致伸缩性，非常高的磁化率，并且可以由Ni-80Fe-20，Ni-30Fe CoNiFe，或CoNiFe。

17. 发明授权

US07283337B2 Abutted exchange bias design for sensor stabilization 失效
标题翻译：传感器稳定的基准交换偏置设计
公开(公告)号：US07283337B2
公开(公告)日：2007-10-16
申请号：US11074270
申请日：2005-03-04
申请人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
发明人： Masanori Sakai , Kunliang Zhang , Kenichi Takano , Chyu-Jiuh Torng , Yunfei Li , Po-Kang Wang
IPC分类号： G11B5/127
CPC分类号： G11B5/3932
摘要： A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.
摘要翻译：用于偏置磁读头内的MR传感器中的自由层的硬偏置（HB）结构包括具有大的负磁致伸缩（λS S S S S）值的主偏置层。研磨后装置中的压缩应力引起强的面内各向异性，其有效地提供纵向偏压以稳定传感器。主偏置层形成在两个FM层之间，并且至少一个AFM层设置在上FM层上方或下FM层的下方。另外，可以存在作为HB结构中的底层的Ta / Ni或Ta / NiFe种子层。与传统的邻接结交换偏置设计相比，本文所述的HB结构在类似的不对称西格玛下产生更高的输出幅度，并显着降低旁瓣发生。此外，由于主偏置层用作侧屏蔽，所以实现了具有相似轨道宽度的较小MRWu。

18. 发明申请

US20070184561A1 Magnetic random access memory array with free layer locking mechanism and method of its use 失效
标题翻译：磁性随机存取存储阵列具有自由层锁定机制及其使用方法
公开(公告)号：US20070184561A1
公开(公告)日：2007-08-09
申请号：US11732073
申请日：2007-04-02
申请人： Yimin Guo , Po-Kang Wang , Xizeng Shi , Tai Min
发明人： Yimin Guo , Po-Kang Wang , Xizeng Shi , Tai Min
IPC分类号： H01L21/00
CPC分类号： G11C11/16
摘要： A method of using an MTJ MRAM cell element having two magnetization states of greater and lesser stability. During switching, the free layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with a SAL (soft adjacent layer), which is a layer of soft magnetic material formed on an adjacent current carrying line, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.
摘要翻译：一种使用具有较高和较小稳定性的两种磁化状态的MTJ MRAM单元元件的方法。在切换期间，自由层首先通过字线电流处于较不稳定的状态，使得小的位线电流可以切换其磁化方向。在切换之后，由于与在相邻的载流线上形成的软磁材料层的SAL（软相邻层）的静磁相互作用的结果，状态恢复到更稳定的形式，这防止了在相邻的载流线上形成的软磁材料层它实际上并没有被选中，也提供了抗热搅拌的稳定性。

19. 发明申请

US20070164380A1 MRAM with split read-write cell structures 失效
标题翻译：具有分割读写单元结构的MRAM
公开(公告)号：US20070164380A1
公开(公告)日：2007-07-19
申请号：US11331998
申请日：2006-01-13
申请人： Tai Min , Po-Kang Wang
发明人： Tai Min , Po-Kang Wang
IPC分类号： H01L43/00
CPC分类号： H01L27/228
摘要： An MRAM cell is formed in two separate portions. A first portion, that includes a pinned layer, a tunneling barrier layer and first free layer part, is used to read the value of a stored bit of information. A second portion includes a second free layer part on which information is written and stored. The second free layer part is formed with a high aspect ratio cross-section that renders it strongly magnetically anisotropic and enables it to couple to the relatively isotropic first free layer through a magnetostatic interaction. This interaction aligns the magnetization of the first free layer part in an opposite direction to the magnetization of the second free layer part. The magnetic orientation of the first free layer part relative to that of its adjacent pinned layer determines the resistance state of the first cell portion and this resistance state can be read by passing a current through the first cell portion. Thus, in effect, the first cell portion becomes a remote sensing device for the magnetization orientation of the second free layer part
摘要翻译： MRAM单元分成两部分形成。使用包括被钉扎层，隧道势垒层和第一自由层部分的第一部分来读取存储的信息位的值。第二部分包括其上写入和存储信息的第二自由层部分。第二自由层部分形成有高纵横比的横截面，其使得其具有强烈的磁性各向异性，并使其能够通过静磁相互作用耦合到相对各向同性的第一自由层。这种相互作用使第一自由层部分的磁化方向与第二自由层部分的磁化方向相反。第一自由层部分相对于其相邻被钉扎层的磁取向确定第一单元部分的电阻状态，并且可以通过使电流通过第一单元部分来读取该电阻状态。因此，实际上，第一单元部分成为用于第二自由层部分的磁化取向的遥感装置

20. 发明授权

US07242046B2 Magnetic random access memory designs with controlled magnetic switching mechanism by magnetostatic coupling 失效
标题翻译：磁性随机存取存储器设计采用静磁耦合控制磁切换机构
公开(公告)号：US07242046B2
公开(公告)日：2007-07-10
申请号：US11167852
申请日：2005-06-27
申请人： Tai Min , Po Kang Wang
发明人： Tai Min , Po Kang Wang
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： G11C11/16 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3272 , H01F41/308 , H01L43/08
摘要： A magnetic tunneling junction (MTJ) memory cell for a magnetic random access memory (MRAM) array is formed as a chain of magnetostatically coupled segments. The segments can be circular, elliptical, lozenge shaped or shaped in other geometrical forms. Unlike the isolated cells of typical MTJ designs which exhibit curling of the magnetization at the cell ends and uncompensated pole structures, the present multi-segmented design, with the segments being magnetostatically coupled, undergoes magnetization switching at controlled nucleation sites by the fanning mode. As a result, the multi-segmented cells of the present invention are not subject to variations in switching fields due to irregularities an structural defects.
摘要翻译：形成磁性随机存取存储器（MRAM）阵列的磁性隧道结（MTJ）存储单元作为静磁耦合段的链。片段可以是圆形，椭圆形，菱形形状或其他几何形状的形状。与在单元端和未补偿的极结构处呈现卷曲的典型MTJ设计的隔离单元不同，具有磁静态耦合的段的当前多段设计在受控成核位置通过扇形模式进行磁化切换。结果，本发明的多分段电池由于不规则性而不会因结构缺陷而变化。

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