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1. 发明授权

US08767349B2 Write head having recessed magnetic material in gap region 有权
公开(公告)号：US08767349B2
公开(公告)日：2014-07-01
申请号：US13367349
申请日：2012-02-06
申请人： Moris Dovek , Glen Garfunkel , Po Kang Wang
发明人： Moris Dovek , Glen Garfunkel , Po Kang Wang
IPC分类号： G11B5/127
CPC分类号： G11B5/2657 , Y10T29/49021 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： As track densities increase, it becomes increasingly important, while writing in a given track, not to inadvertently write data in adjoining tracks. This problem has been overcome by limiting the width of material in the ABS plane to what it is at the write gap. The part of the lower pole that is wider than this is recessed back away from the ABS, thereby greatly reducing its magnetic influence on adjacent tracks. Four different embodiments of write heads that incorporate this notion are described together with a description of a general process for their manufacture.

2. 发明授权

US08693273B2 Reference averaging for MRAM sense amplifiers 有权
标题翻译： MRAM读出放大器的参考平均
公开(公告)号：US08693273B2
公开(公告)日：2014-04-08
申请号：US13345116
申请日：2012-01-06
申请人： Perng-Fei Yuh , Po-Kang Wang , Lejan Pu
发明人： Perng-Fei Yuh , Po-Kang Wang , Lejan Pu
IPC分类号： G11C7/02
CPC分类号： G11C7/06 , G11C11/1673 , G11C2207/063
摘要： A sense amplifier comprising a reference current developed from a programmed and a non-programmed reference cell is used to read a signal from a magnetic random access memory (MRAM) comprising magnetic tunnel junction (MTJ) cells. The average current is determined from reference cells in as few as one sense amplifier and as many as n sense amplifiers, and is an average current between the programmed reference cell and the non-programmed reference cell that approximates the mid point between the two states. The sense amplifier can be fully differential or a non differential sense amplifier.
摘要翻译：包括从编程和非编程参考单元产生的参考电流的读出放大器用于从包括磁性隧道结（MTJ）单元的磁性随机存取存储器（MRAM）中读取信号。平均电流由少于1个读出放大器和多达n个读出放大器的参考单元确定，并且是编程参考单元和非编程参考单元之间的平均电流，其近似于两个状态之间的中点。读出放大器可以是全差分或非差分读出放大器。

3. 发明授权

US08497559B2 MRAM with means of controlling magnetic anisotropy 有权
标题翻译： MRAM具有控制磁各向异性的方法
公开(公告)号：US08497559B2
公开(公告)日：2013-07-30
申请号：US11973751
申请日：2007-10-10
申请人： Tai Min , Po Kang Wang
发明人： Tai Min , Po Kang Wang
IPC分类号： H01L29/82 , G11C11/00
CPC分类号： H01L43/08 , G11C11/1675 , H01L43/12
摘要： A CPP MTJ MRAM unit cell utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The strength of the switching field, Hs of the cell is controlled by the magnetic anisotropy of the cell which, in turn, is controlled by a combination of the shape anisotropy and the stress and magnetostriction of the cell free layer. The coefficient of magnetostriction of the free layer can be adjusted by methods such as adding Nb or Hf to alloys of Ni, Fe, Co and B or by forming the free layer as a lamination of layers having different values of their coefficients of magnetostriction. Thus, by tuning the coefficient of magnetostriction of the cell free layer it is possible to produce a switching field of sufficient magnitude to render the cell thermally stable while maintaining a desirable switching current.
摘要翻译： CPP MTJ MRAM单元利用自旋角动量的传递作为改变自由层的磁矩方向的机制。开关场的强度，电池的Hs由电池的磁各向异性控制，电池的磁各向异性又由形状各向异性和无电解层的应力和磁致伸缩的组合控制。自由层的磁致伸缩系数可以通过添加Nb，Hf等Ni，Fe，Co，B的合金的方法来进行，也可以通过形成自由层作为其磁致伸缩系数不同的层的叠层来进行。因此，通过调谐无电解层的磁致伸缩系数，可以产生足够大的开关场，使电池热稳定，同时保持理想的开关电流。

4. 发明申请

US20120137507A1 Write Head Having Recessed Magnetic Material In Gap Region 有权
公开(公告)号：US20120137507A1
公开(公告)日：2012-06-07
申请号：US13367355
申请日：2012-02-06
申请人： Moris Dovek , Glen Garfunkel , Po Kang Wang
发明人： Moris Dovek , Glen Garfunkel , Po Kang Wang
IPC分类号： G11B5/127
CPC分类号： G11B5/2657 , Y10T29/49021 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： As track densities increase, it becomes increasingly important, while writing in a given track, not to inadvertently write data in adjoining tracks. This problem has been overcome by limiting the width of material in the ABS plane to what it is at the write gap. The part of the lower pole that is wider than this is recessed back away from the ABS, thereby greatly reducing its magnetic influence on adjacent tracks. Four different embodiments of write heads that incorporate this notion are described together with a description of a general process for their manufacture.

5. 发明授权

US08133439B2 GMR biosensor with enhanced sensitivity 有权
标题翻译： GMR生物传感器具有增强的灵敏度
公开(公告)号：US08133439B2
公开(公告)日：2012-03-13
申请号：US11497162
申请日：2006-08-01
申请人： Po-Kang Wang , Xizeng Shi , Chyu-Jiuh Torng
发明人： Po-Kang Wang , Xizeng Shi , Chyu-Jiuh Torng
IPC分类号： G01N15/06
CPC分类号： G01R33/0052 , B82Y25/00 , G01N15/0656 , G01N27/745 , G01N2015/0065 , G01R33/05 , G01R33/093 , G01R33/098 , Y10T29/49124 , Y10T29/49986
摘要： A sensor array comprising a series connection of parallel GMR sensor stripes provides a sensitive mechanism for detecting the presence of magnetized particles bonded to biological molecules that are affixed to a substrate. The adverse effect of hysteresis on the maintenance of a stable bias point for the magnetic moment of the sensor free layer is eliminated by a combination of biasing the sensor along its longitudinal direction rather than the usual transverse direction and by using the overcoat stress and magnetostriction of magnetic layers to create a compensatory transverse magnetic anisotropy. By making the spaces between the stripes narrower than the dimension of the magnetized particle and by making the width of the stripes equal to the dimension of the particle, the sensitivity of the sensor array is enhanced.
摘要翻译：包括并联GMR传感器条的串联连接的传感器阵列提供了用于检测粘附到固定到基底上的生物分子的磁化颗粒的存在的敏感机制。通过将传感器沿着其纵向方向而不是通常的横向偏置并通过使用传感器的外涂层应力和磁致伸缩的组合来消除滞后对维持传感器自由层的磁矩的稳定偏置点的不利影响磁性层产生补偿横向磁各向异性。通过使条纹之间的空间比磁化粒子的尺寸窄，并且通过使条纹的宽度等于粒子的尺寸，传感器阵列的灵敏度增强。

6. 发明申请

US20120058574A1 MRAM with storage layer and super-paramagnetic sensing layer 有权
公开(公告)号：US20120058574A1
公开(公告)日：2012-03-08
申请号：US13373127
申请日：2011-11-04
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L21/02
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

7. 发明申请

US20110284977A1 Array of magnetic tunneling junction film structures with process determined in-plane magnetic anisotropy 有权
标题翻译：具有工艺确定的面内磁各向异性的磁隧道结膜结构阵列
公开(公告)号：US20110284977A1
公开(公告)日：2011-11-24
申请号：US13136194
申请日：2011-07-26
申请人： Tai Min , Cheng Horng , Po Kang Wang
发明人： Tai Min , Cheng Horng , Po Kang Wang
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3218 , H01F10/3272 , H01F41/307 , H01L43/12
摘要： An MRAM array of MTJ memory cells is provided wherein each such cell is a layered MTJ structure located at an intersection of a word and bit line and has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The array of MTJ memory cells so provided is far less sensitive to shape irregularities and edge defects of individual cells than arrays of the prior art.
摘要翻译：提供了MTJ存储器单元的MRAM阵列，其中每个这样的单元是位于字和位线的交叉点处的分层MTJ结构，并且具有直径为1.0微米或更小的小的圆形水平横截面，并且其中铁磁自由层每个这样的电池具有由形成在自由层上的薄的反铁磁性层的磁耦合产生的磁各向异性。如此提供的MTJ存储器单元的阵列比现有技术的阵列对单个单元的形状不规则和边缘缺陷的敏感性差。

8. 发明申请

US20100191896A1 Solid state drive controller with fast NVRAM buffer and non-volatile tables 审中-公开
标题翻译：具有快速NVRAM缓冲器和非易失性表的固态驱动器控制器
公开(公告)号：US20100191896A1
公开(公告)日：2010-07-29
申请号：US12321663
申请日：2009-01-23
申请人： Hsu Kai Yang , Po-Kang Wang , Takuma Murai , Takehiro Kamigama
发明人： Hsu Kai Yang , Po-Kang Wang , Takuma Murai , Takehiro Kamigama
IPC分类号： G06F12/02 , G06F12/00 , G06F12/08
CPC分类号： G06F12/0246 , G06F12/0873 , G06F2212/214 , G06F2212/7201 , G06F2212/7203
摘要： Systems and methods for a SSD controller enabling data transfer between a host and flash memories have been achieved. A major component of the SSD controller is a non-volatile buffer memory, which interfaces fast disk drive protocols and slow write and read cycles of NAND flash. Preferably MRAM or Phase Change RAM can be used for the buffer memory. Non-volatile tables can also be implemented for storing dynamic logical to physical address translation, defective sector information and their spare sectors and/or SSD configuration parameters. data are kept in a buffer memory when the buffer memory is not powered
摘要翻译： SSD控制器的系统和方法实现了主机和闪速存储器之间的数据传输。 SSD控制器的一个主要组成部分是非易失性缓冲存储器，它接口快速磁盘驱动器协议和NAND闪存的缓慢写入和读取周期。优选地，MRAM或相变RAM可用于缓冲存储器。还可以实现非易失性表，用于存储动态逻辑到物理地址转换，缺陷扇区信息及其备用扇区和/或SSD配置参数。当缓冲存储器未通电时，数据保存在缓冲存储器中

9. 发明申请

US20100176429A1 MRAM with storage layer and super-paramagnetic sensing layer 有权
标题翻译： MRAM与存储层和超顺磁感应层
公开(公告)号：US20100176429A1
公开(公告)日：2010-07-15
申请号：US12661345
申请日：2010-03-16
申请人： Po-Kang Wang , Yimin Guo , Cheng T. Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng T. Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L29/94
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.
摘要翻译：公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。存储层可以具有SyAP配置和层压结构。

10. 发明授权

US07582942B2 Planar flux concentrator for MRAM devices 有权
公开(公告)号：US07582942B2
公开(公告)日：2009-09-01
申请号：US12290410
申请日：2008-10-30
申请人： Yimin Guo , Po-Kang Wang
发明人： Yimin Guo , Po-Kang Wang
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , G11C11/15 , H01L27/222
摘要： The present invention provides an MRAM that includes a conductive line for generating a magnetic field. The latter is enhanced by the addition of a flux concentrator made from a single plane of soft ferromagnetic material, magnetically stabilized by means of an antiferromagnetic layer. This structure, in addition to being very easy to fabricate, facilitates close control over its magnetic properties, including uniformity and domain structure.

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