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    • 3. 发明申请
    • Magnetic random access memory array with free layer locking mechanism
    • 磁性随机存取存储阵列具有自由层锁定机制
    • US20050219895A1
    • 2005-10-06
    • US10818581
    • 2004-04-06
    • Yimin GuoPo-Kang WangXizeng ShiTai Min
    • Yimin GuoPo-Kang WangXizeng ShiTai Min
    • H01L27/105G11C11/16H01L21/8246H01L43/08G11C11/00G11C11/15
    • G11C11/16
    • An MTJ MRAM cell element, whose free layer has a shape induced magnetic anisotropy, is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity current carrying layer and a soft adjacent magnetic layer (SAL). During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer to produce two magnetization states of greater and lesser stability. During switching, the layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with the SAL, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.
    • 在正交字和位线之间形成MTJ MRAM单元元件,其自由层具有诱导磁各向异性的形状。 位线是包括高导电性载流层和软相邻磁性层(SAL)的复合线。 在操作期间,软磁层集中了电流的磁场,并且由于其接近于自由层,其与自由层磁耦合以产生更大和更小稳定性的两种磁化状态。 在切换期间,该层首先通过字线电流处于较不稳定的状态,使得小的位线电流可以切换其磁化方向。 在切换之后,由于与SAL的静磁相互作用,状态恢复到更稳定的形式,这防止了当它不被实际选择时被意外重写,并且还提供了抗热搅动的稳定性。
    • 5. 发明授权
    • Magnetic random access memory array with free layer locking mechanism
    • 磁性随机存取存储阵列具有自由层锁定机制
    • US07211874B2
    • 2007-05-01
    • US10818581
    • 2004-04-06
    • Yimin GuoPo-Kang WangXizeng ShiTai Min
    • Yimin GuoPo-Kang WangXizeng ShiTai Min
    • H01L29/82
    • G11C11/16
    • An MTJ MRAM cell element, whose free layer has a shape induced magnetic anisotropy, is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity current carrying layer and a soft adjacent magnetic layer (SAL). During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer to produce two magnetization states of greater and lesser stability. During switching, the layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with the SAL, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.
    • 在正交字和位线之间形成MTJ MRAM单元元件,其自由层具有诱导磁各向异性的形状。 位线是包括高导电性载流层和软相邻磁性层(SAL)的复合线。 在操作期间,软磁层集中了电流的磁场,并且由于其接近于自由层,其与自由层磁耦合以产生更大和更小稳定性的两种磁化状态。 在切换期间,该层首先通过字线电流处于较不稳定的状态,使得小的位线电流可以切换其磁化方向。 在切换之后,由于与SAL的静磁相互作用,状态恢复到更稳定的形式,这防止了当它不被实际选择时被意外重写,并且还提供了抗热搅动的稳定性。