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1. 发明申请

US20100178715A1 MRAM with storage layer and super-paramagnetic sensing layer 有权
公开(公告)号：US20100178715A1
公开(公告)日：2010-07-15
申请号：US12661365
申请日：2010-03-16
申请人： Po-Kang Wang , Yimin Guo , Cheng T. Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng T. Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L21/336 , H01L21/8246
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

2. 发明申请

US20080001207A1 Planar flux concentrator for MRAM devices 有权
公开(公告)号：US20080001207A1
公开(公告)日：2008-01-03
申请号：US11476495
申请日：2006-06-28
申请人： Yimin Guo , Po-Kang Wang
发明人： Yimin Guo , Po-Kang Wang
IPC分类号： H01L29/788
CPC分类号： H01L43/12 , G11C11/15 , H01L27/222
摘要： The present invention provides an MRAM that includes a conductive line for generating a magnetic field. The latter is enhanced by the addition of a flux concentrator made from a single plane of soft ferromagnetic material, magnetically stabilized by means of an antiferromagnetic layer. This structure, in addition to being very easy to fabricate, facilitates close control over its magnetic properties, including uniformity and domain structure.

3. 发明申请

US20070012952A1 Segmented magnetic shielding elements 失效
标题翻译：分段磁屏蔽元件
公开(公告)号：US20070012952A1
公开(公告)日：2007-01-18
申请号：US11182255
申请日：2005-07-15
申请人： Yimin Guo , Po-Kang Wang
发明人： Yimin Guo , Po-Kang Wang
IPC分类号： H01L43/00 , H01L21/00
CPC分类号： H01L27/222 , G11C11/1675 , G11C11/1695
摘要： A second shield layer, under the master shielding layer, is added to a segmented MRAM array. This additional shielding is patterned so as to provide one shield per bit slice. The placement of longitudinal biasing tabs at the ends of these segmented shields ensures that each segmented shield is a single magnetic domain, making it highly effective as a shield against very small stray fields.
摘要翻译：在主屏蔽层下方的第二屏蔽层被添加到分段的MRAM阵列。图案化附加屏蔽，以便每位片提供一个屏蔽。在这些分段屏蔽的端部处放置纵向偏置突片确保每个分段屏蔽是单个磁畴，使其作为防止非常小的杂散场的屏蔽非常有效。

4. 发明授权

US08089265B2 MTJ sensor including domain stable free layer 有权
标题翻译： MTJ传感器包括域稳定自由层
公开(公告)号：US08089265B2
公开(公告)日：2012-01-03
申请号：US12321772
申请日：2009-01-26
申请人： Yimin Guo , Po-Kang Wang
发明人： Yimin Guo , Po-Kang Wang
IPC分类号： G01R15/18 , G01R33/02
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R15/205 , G01R33/098 , G11B5/3932 , H01F10/3254 , H01F10/3277 , H01F41/302
摘要： By subdividing the free layer of a GMR/TMR device into multiple sub-elements that share common top and bottom electrodes, a magnetic detector is produced that is domain stable in the presence of large stray fields, thereby eliminating the need for longitudinal bias magnets. Said detector may be used to measure electric currents without being affected by local temperature fluctuations and/or stray fields.
摘要翻译：通过将GMR / TMR器件的自由层细分成共享共同的顶部和底部电极的多个子元件，产生在大的杂散场存在下稳定的磁性检测器，从而不需要纵向偏置磁体。所述检测器可用于测量电流而不受局部温度波动和/或杂散场的影响。

5. 发明授权

US07635974B2 Magnetic tunnel junction (MTJ) based magnetic field angle sensor 有权
标题翻译：磁隧道结（MTJ）磁场角传感器
公开(公告)号：US07635974B2
公开(公告)日：2009-12-22
申请号：US11799706
申请日：2007-05-02
申请人： Yimin Guo , Po-Kang Wang
发明人： Yimin Guo , Po-Kang Wang
IPC分类号： G01B7/30
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/098
摘要： A magnetic field angle sensor for measurement of a magnetic field angle over a 360° range has magnetic tunnel junction elements oriented at multiple angles. The magnetic field angle sensor includes multiple magnetic tunnel junction elements formed on a substrate that have an anti-ferromagnetic layer and pinned synthetic multiple layer. The magnetic tunnel junction elements are patterned to have a large dimensional aspect ratio and large anisotropies the pinned synthetic multiple layer of the magnetic tunnel junction elements. The magnetic tunnel junction elements are annealed in the presence of a strong magnetic field in a direction of the reference axis and the annealed for a second time with no external magnetic field so that exchange pinning is reduced and strong stress induced anisotropies of the pinned synthetic multiple layer align magnetization of the pinned synthetic multiple layer align a long axis of each of the magnetic tunnel junction elements.
摘要翻译：用于测量360°范围内的磁场角的磁场角传感器具有以多个角度定向的磁性隧道结元件。磁场角传感器包括形成在具有反铁磁层和固定合成多层的基板上的多个磁性隧道结元件。磁性隧道结元件被图案化以具有大的尺寸长宽比和大的各向异性的磁性隧道结元件的被钉合的合成多层。磁性隧道结元件在存在强磁场的情况下在参考轴的方向上进行退火，并且在没有外部磁场的情况下第二次退火，从而减少了交换钉扎和强制应力引起的固定合成倍数的各向异性钉扎合成多层的层对准磁化使每个磁性隧道结元件的长轴对齐。

6. 发明申请

US20090184704A1 MTJ sensor including domain stable free layer 有权
标题翻译： MTJ传感器包括域稳定自由层
公开(公告)号：US20090184704A1
公开(公告)日：2009-07-23
申请号：US12321772
申请日：2009-01-26
申请人： Yimin Guo , Po-Kang Wang
发明人： Yimin Guo , Po-Kang Wang
IPC分类号： G01R1/20
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R15/205 , G01R33/098 , G11B5/3932 , H01F10/3254 , H01F10/3277 , H01F41/302
摘要： By subdividing the free layer of a GMR/TMR device into multiple sub-elements that share common top and bottom electrodes, a magnetic detector is produced that is domain stable in the presence of large stray fields, thereby eliminating the need for longitudinal bias magnets. Said detector may be used to measure electric currents without being affected by local temperature fluctuations and/or stray fields.
摘要翻译：通过将GMR / TMR器件的自由层细分成共享共同的顶部和底部电极的多个子元件，产生在大的杂散场存在下稳定的磁性检测器，从而不需要纵向偏置磁体。所述检测器可用于测量电流而不受局部温度波动和/或杂散场的影响。

7. 发明申请

US20090065909A1 Segmented magnetic shielding elements 失效
公开(公告)号：US20090065909A1
公开(公告)日：2009-03-12
申请号：US12290703
申请日：2008-11-03
申请人： Yimin Guo , Po-Kang Wang
发明人： Yimin Guo , Po-Kang Wang
IPC分类号： H01L23/552 , G11C11/14
CPC分类号： H01L27/222 , G11C11/1675 , G11C11/1695
摘要： A second shield layer, under the master shielding layer, is added to a segmented MRAM array. This additional shielding is patterned so as to provide one shield per bit slice. The placement of longitudinal biasing tabs at the ends of these segmented shields ensures that each segmented shield is a single magnetic domain, making it highly effective as a shield against very small stray fields.

8. 发明申请

US20080272771A1 Magnetic tunnel junction (MTJ) based magnetic field angle sensor 有权
标题翻译：磁隧道结（MTJ）磁场角传感器
公开(公告)号：US20080272771A1
公开(公告)日：2008-11-06
申请号：US11799706
申请日：2007-05-02
申请人： Yimin Guo , Po-Kang Wang
发明人： Yimin Guo , Po-Kang Wang
IPC分类号： G01R33/00
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/098
摘要： A magnetic field angle sensor for measurement of a magnetic field angle over a 360° range has magnetic tunnel junction elements oriented at multiple angles. The magnetic field angle sensor includes multiple magnetic tunnel junction elements formed on a substrate that have an anti-ferromagnetic layer and pinned synthetic multiple layer. The magnetic tunnel junction elements are patterned to have a large dimensional aspect ratio and large anisotropies the pinned synthetic multiple layer of the magnetic tunnel junction elements. The magnetic tunnel junction elements are annealed in the presence of a strong magnetic field in a direction of the reference axis and the annealed for a second time with no external magnetic field so that exchange pinning is reduced and strong stress induced anisotropies of the pinned synthetic multiple layer align magnetization of the pinned synthetic multiple layer align a long axis of each of the magnetic tunnel junction elements.
摘要翻译：用于测量360°范围内的磁场角的磁场角传感器具有以多个角度定向的磁性隧道结元件。磁场角传感器包括形成在具有反铁磁层和固定合成多层的基板上的多个磁性隧道结元件。磁性隧道结元件被图案化以具有大的尺寸长宽比和大的各向异性的磁性隧道结元件的被钉合的合成多层。磁性隧道结元件在存在强磁场的情况下在参考轴的方向上进行退火，并且在没有外部磁场的情况下第二次退火，从而减少了交换钉扎和强制应力引起的固定合成倍数的各向异性钉扎合成多层的层对准磁化使每个磁性隧道结元件的长轴对齐。

9. 发明授权

US06373667B1 Single stripe magnetoresistive (MR) head 失效
标题翻译：单条磁阻（MR）头
公开(公告)号：US06373667B1
公开(公告)日：2002-04-16
申请号：US09637208
申请日：2000-08-14
申请人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju , Yimin Guo
发明人： Cherng-Chyi Han , Mao-Min Chen , Cheng Tzong Horng , Po-Kang Wang , Chyu Jiuh Torng , Kochan Ju , Yimin Guo
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , Y10T29/49048
摘要： A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.
摘要翻译：一种用于制造软相邻层（SAL）磁阻（MR）传感器元件和若干软相邻层（SAL）磁阻（MR））传感器元件的方法，其可以使用该方法制造。首先提供基板。在衬底上形成介电层，其中电介质层具有电介质层的第一表面和电介质层与电介质层的第一表面相对的第二表面。还在衬底上形成与电介质层的第一表面接触的磁阻（MR）层。还在衬底上形成软相邻层（SAL），其中软相邻层（SAL）具有软相邻层（SAL）的第一表面和软相邻层（SAL）的第二表面。软相邻层（SAL）的第一表面接触电介质层的第二表面。最后，还在衬底上形成横向磁偏置层，横向磁偏置层接触软相邻层（SAL）的第二表面，并且其中介电层，磁阻（MR）层中的至少一个，软相邻层（SAL）和横向磁偏置层是使用蚀刻掩模形成的图案层，其用作用于形成与图案化层的边缘相邻的图案化的第二介电层的剥离模板。本发明还考虑了由介于基板和软相邻层（SAL）之间的磁阻（MR）层形成的软相邻层（SAL）磁阻（MR）传感器元件。类似地，本发明还考虑使用由硬偏磁永磁材料形成的横向磁偏置层的软相邻层（SAL）磁阻（MR）传感器元件。

10. 发明申请

US20120058574A1 MRAM with storage layer and super-paramagnetic sensing layer 有权
公开(公告)号：US20120058574A1
公开(公告)日：2012-03-08
申请号：US13373127
申请日：2011-11-04
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L21/02
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

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