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11. 发明授权

US07964750B2 Method for synthesizing 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide or a derivative thereof 有权
标题翻译：合成9,10-二氢-9-氧杂-10-磷杂菲-10-氧化物或其衍生物的方法
公开(公告)号：US07964750B2
公开(公告)日：2011-06-21
申请号：US12535897
申请日：2009-08-05
申请人： Ling Lu , Kai-Chiang Huang , Kuan-Chieh Tseng , Chung-Ning Fan , Yu-Cheng Lee , Tien-Wen Lo , Yu-Chin Lee
发明人： Ling Lu , Kai-Chiang Huang , Kuan-Chieh Tseng , Chung-Ning Fan , Yu-Cheng Lee , Tien-Wen Lo , Yu-Chin Lee
IPC分类号： C07F9/6571
CPC分类号： C07F9/657172 , C07F9/65719
摘要： A method for synthesizing 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide or its derivatives has a step of introducing 6-chloro-6H-dibenz[c,e][1,2]oxaphosphorin or its derivative, an acid compound and water into a reacting chamber to form an organic layer having 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide or its derivative and an aqueous layer. Because the acid compound is from an external source and has a catalyzing effect, employing the method can prevent side reaction from occurring and increase yield of 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide or its derivative. Furthermore, the method is a one-pot operation of hydrolysis, dehydration and cyclization, so the method does not require purification of intermediates. Therefore, the method is time- and cost-saving and requires less organic solvent, resulting in less pollution to the environment.
摘要翻译：合成9,10-二氢-9-氧杂-10-磷杂菲-10-氧化物或其衍生物的方法具有引入6-氯-6H-二苯并[c，e] [1,2]氧杂磷杂环丁烷或其衍生物的步骤，酸化合物和水加入到反应室中以形成具有9,10-二氢-9-氧杂-10-磷杂菲-10-氧化物或其衍生物和水层的有机层。由于酸化合物来自外源并具有催化作用，所以采用该方法可以防止发生副反应，提高9,10-二氢-9-氧杂-10-磷杂菲-10-氧化物或其衍生物的产率。此外，该方法是水解，脱水和环化的一锅操作，因此该方法不需要中间体的纯化。因此，该方法节省时间并且需要更少的有机溶剂，从而减少对环境的污染。

12. 发明申请

US20110073179A1 ILLUMINANT TYPE TRANSPARENT SOLAR CELL DEVICE 审中-公开
标题翻译：发光型透明太阳能电池装置
公开(公告)号：US20110073179A1
公开(公告)日：2011-03-31
申请号：US12890148
申请日：2010-09-24
申请人： Hsin-Chun LU , Chun-Lung Chu , Chen-Sung Chang , Jo-Ling Lu , Chen-Yang Lo
发明人： Hsin-Chun LU , Chun-Lung Chu , Chen-Sung Chang , Jo-Ling Lu , Chen-Yang Lo
IPC分类号： H01L31/00
CPC分类号： H01L31/02322 , H01L31/022466
摘要： An illuminant transparent solar cell device, comprising a transparent substrate and the following layers disposed from bottom up sequentially on the transparent substrate: a transparent fluorescent layer, a p-type transparent conductive oxide layer, an intrinsic-type transparent conductive oxide layer, a n-type transparent conductive oxide layer, and an anti-reflection layer serving as a protection layer. In the illuminant transparent solar cell device, the characteristics of a p-type and an n-type transparent conductive oxide layers as well as a transparent fluorescent layer are utilized so that sunlight can not only be used to provide natural lighting in daytime but also be used to generate electricity which is stored in an electricity storage device by transmitting through this device while the electricity stored therein can be used to provide indoor lighting at night, thus saving the consumption of fossil fuel energy.
摘要翻译：一种透明太阳能电池器件，包括透明基板和从下而上依次设置在透明基板上的透明基板和透明基板上的下列层：透明荧光层，p型透明导电氧化物层，本征型透明导电氧化物层，n 型透明导电氧化物层和用作保护层的防反射层。在发光体透明太阳能电池器件中，利用p型和n型透明导电氧化物层以及透明荧光层的特性，使得阳光不仅可以用于在白天提供自然光照，而且还可以是用于通过在该蓄电装置中发送的电力来存储在蓄电装置中的电力，而其中存储的电能可以用于夜间提供室内照明，因此节省了化石燃料的消耗。

13. 发明申请

US20110034717A1 METHOD FOR SYNTHESIZING 9,10-DIHYDRO-9-OXA-10-PHOSPHAPHENANTHRENE-10-OXIDE AND DERIVATIVES THEREOF 有权
标题翻译：合成9,10-二氢-9-氧代-10-磷杂环戊烯-10-氧化物及其衍生物的方法
公开(公告)号：US20110034717A1
公开(公告)日：2011-02-10
申请号：US12535897
申请日：2009-08-05
申请人： Ling Lu , Kai-Chiang Huang , Kuan-Chieh Tseng , Chung-Ning Fan , Yu-Cheng Lee , Tien-Wen Lo , Yu-Chin Lee
发明人： Ling Lu , Kai-Chiang Huang , Kuan-Chieh Tseng , Chung-Ning Fan , Yu-Cheng Lee , Tien-Wen Lo , Yu-Chin Lee
IPC分类号： C07F9/32
CPC分类号： C07F9/657172 , C07F9/65719
摘要： A method for synthesizing 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide or its derivatives has a step of introducing 6-chloro-6H-dibenz[c,e][1,2]oxaphosphorin or its derivative, an acid compound and water into a reacting chamber to form an organic layer having 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide or its derivative and an aqueous layer. Because the acid compound is from an external source and has a catalyzing effect, employing the method can prevent side reaction from occurring and increase yield of 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide or its derivative. Furthermore, the method is a one-pot operation of hydrolysis, dehydration and cyclization, so the method does not require purification of intermediates. Therefore, the method is time-and cost-saving and requires less organic solvent, resulting in less pollution to the environment.
摘要翻译：合成9,10-二氢-9-氧杂-10-磷杂菲-10-氧化物或其衍生物的方法具有引入6-氯-6H-二苯并[c，e] [1,2]氧杂磷杂环丁烷或其衍生物的步骤，酸化合物和水加入到反应室中以形成具有9,10-二氢-9-氧杂-10-磷杂菲-10-氧化物或其衍生物和水层的有机层。由于酸化合物来自外源并具有催化作用，所以采用该方法可以防止发生副反应，提高9,10-二氢-9-氧杂-10-磷杂菲-10-氧化物或其衍生物的产率。此外，该方法是水解，脱水和环化的一锅操作，因此该方法不需要中间体的纯化。因此，该方法节省时间并且需要更少的有机溶剂，导致对环境的污染较少。

14. 发明授权

US07613317B2 Image processing apparatus, image processing method, computer program and computer readable storage medium 失效
标题翻译：图像处理装置，图像处理方法，计算机程序和计算机可读存储介质
公开(公告)号：US07613317B2
公开(公告)日：2009-11-03
申请号：US11151989
申请日：2005-06-14
申请人： Ling Lu
发明人： Ling Lu
IPC分类号： G06K9/00
CPC分类号： H04N1/32219 , H04N1/32203 , H04N1/32251 , H04N2201/3233 , H04N2201/327
摘要： There is provided a message processing apparatus including an image inputting unit for inputting a document image, an extracting unit for extracting a character image from the input document image, and an embedding unit for embedding watermark message by correcting a density value of the extracted character image.
摘要翻译：提供了一种消息处理装置，包括用于输入文档图像的图像输入单元，用于从输入文档图像中提取字符图像的提取单元，以及用于通过校正提取的字符图像的浓度值来嵌入水印消息的嵌入单元。

15. 发明授权

US07544305B2 Chemical mechanical polishing process for forming shallow trench isolation structure 有权
标题翻译：用于形成浅沟槽隔离结构的化学机械抛光工艺
公开(公告)号：US07544305B2
公开(公告)日：2009-06-09
申请号：US11863665
申请日：2007-09-28
申请人： Chia-Jung Hsu , Art Yu , Hsiao-Ling Lu , Teng-Chun Tsai
发明人： Chia-Jung Hsu , Art Yu , Hsiao-Ling Lu , Teng-Chun Tsai
IPC分类号： B44C1/22
CPC分类号： H01L21/76229 , H01L21/31053
摘要： A shallow trench isolation (STI) multistage chemical mechanical polishing (CMP) method for forming a shallow trench isolation structure is provided. The substrate comprising a dense region and an isolation region, a silicon nitride layer formed over the substrate, a plurality of trenches formed in the silicon nitride layer and the substrate, an oxide layer formed over the substrate, filling the trenches, wherein a width of the trenches in the dense region is smaller than that in the isolation region. A first polishing step is performed to remove a portion of the silicon oxide layer until a thickness of the remaining portion of the oxide layer reaches a predetermined thickness. A second polishing step is performed to remove a portion of the remaining portion of the silicon oxide layer until the silicon nitride layer is exposed.
摘要翻译：提供了一种用于形成浅沟槽隔离结构的浅沟槽隔离（STI）多级化学机械抛光（CMP）方法。所述基板包括致密区域和隔离区域，在所述基板上形成的氮化硅层，形成在所述氮化硅层和所述基板中的多个沟槽，形成在所述基板上方的填充所述沟槽的氧化物层，密集区域中的沟槽小于隔离区域中的沟槽。执行第一抛光步骤以除去氧化硅层的一部分直到氧化物层的剩余部分的厚度达到预定厚度。执行第二抛光步骤以去除氧化硅层的剩余部分的一部分，直到暴露氮化硅层。

16. 发明授权

US07291870B2 Electrostatic protection circuit 有权
标题翻译：静电保护电路
公开(公告)号：US07291870B2
公开(公告)日：2007-11-06
申请号：US10904475
申请日：2004-11-12
申请人： Chun-Hsiang Lai , Shin Su , Chia-Ling Lu , Yen-Hung Yeh , Tao-Cheng Lu
发明人： Chun-Hsiang Lai , Shin Su , Chia-Ling Lu , Yen-Hung Yeh , Tao-Cheng Lu
IPC分类号： H01L29/72
CPC分类号： H01L27/0266 , H01L29/7436 , H01L29/87
摘要： An electrostatic discharge (ESD) protection circuit coupled to an input pad comprises a diode formed in a substrate and coupled to the input pad; a P deep well formed in the substrate; an N well formed in the P deep well; a first P+ doped region in the N well; and an NMOS transistor formed on the substrate, comprising a gate, a source and a drain, wherein the drain is formed in the N well and coupled to a Vcc, and the source is formed in the P deep well; and a second P+ doped region formed in the P deep well. The ESD protection circuit uses a smaller area than the conventional ESD protection circuit.
摘要翻译：耦合到输入焊盘的静电放电（ESD）保护电路包括形成在衬底中并耦合到输入焊盘的二极管; 在衬底中形成的P阱; 在P深井中形成N井; N阱中的第一P +掺杂区; 以及形成在所述衬底上的NMOS晶体管，包括栅极，源极和漏极，其中所述漏极形成在所述N阱中并耦合到Vcc，并且所述源极形成在所述P阱中; 以及形成在P深井中的第二P +掺杂区域。 ESD保护电路使用比常规ESD保护电路更小的面积。

17. 发明授权

US07187527B2 Electrostatic discharge conduction device and mixed power integrated circuits using same 有权
标题翻译：静电放电传导器件和混合功率集成电路使用相同
公开(公告)号：US07187527B2
公开(公告)日：2007-03-06
申请号：US10933181
申请日：2004-09-02
申请人： Shin Su , Chun-Hsiang Lai , Cha-Ling Lu , Yen-Hung Yeh , Tao-Cheng Lu
发明人： Shin Su , Chun-Hsiang Lai , Cha-Ling Lu , Yen-Hung Yeh , Tao-Cheng Lu
IPC分类号： H02H9/00
CPC分类号： H01L27/0251 , H01L27/0292
摘要： A device for connection between supply buses in mixed power integrated circuits includes a diode in series with a transistor with an active p-ring in a semiconductor substrate. The active p-ring surrounds the source and drain of the transistor with a conductive region having the same conductivity type as the semiconductor substrate. A control circuit coupled to the p-ring applies a bias voltage in response to an ESD event affecting the first and second conductors. The bias voltage tends to inject carriers into the semiconductor substrate which enables discharge of the short voltage pulse via a parasitic SCR in the substrate from the anode of the diode to the source of the transistor.
摘要翻译：用于在混合功率集成电路中的电源总线之间连接的装置包括与在半导体衬底中具有有源p型环的晶体管串联的二极管。有源P环围绕具有与半导体衬底相同的导电类型的导电区域的晶体管的源极和漏极。耦合到p型环的控制电路响应于影响第一和第二导体的ESD事件施加偏置电压。偏置电压倾向于将载流子注入到半导体衬底中，其能够通过衬底中的寄生SCR从二极管的阳极到晶体管的源极放电短电压脉冲。

18. 发明申请

US20060172526A1 Method for preventing edge peeling defect 审中-公开
标题翻译：防止边缘剥落缺陷的方法
公开(公告)号：US20060172526A1
公开(公告)日：2006-08-03
申请号：US11331361
申请日：2006-01-13
申请人： Chia-Lin Hsu , Shu-Hsien Lee , Chien-Chien Tsai , Hsiao-Ling Lu
发明人： Chia-Lin Hsu , Shu-Hsien Lee , Chien-Chien Tsai , Hsiao-Ling Lu
IPC分类号： H01L21/4763
CPC分类号： H01L21/0209 , H01L21/02087 , H01L21/76883
摘要： A method for improving edge peeling defect is disclosed in this invention. According to this invention, a wafer can be kept from the edge peeling defect of the prior art by introducing a step for removing the weakly adhesive films and the metal structures at the wafer edge after forming a metal interconnect layer on the wafer. Thus, this invention can raise the yield of semiconductor manufacturing, and reduce the pollution chance of the chamber of the semiconductor manufacture.
摘要翻译：本发明公开了一种改善边缘剥离缺陷的方法。根据本发明，通过在晶片上形成金属互连层之后，通过引入在晶片边缘处去除弱粘合膜和金属结构的步骤，可以保持晶片免受现有技术的边缘剥离缺陷的影响。因此，本发明可以提高半导体制造的产量，并且减少半导体制造室的污染机会。

19. 发明授权

US06433176B1 Method for making 8-hydroxyjulolidine compound 失效
标题翻译：制备8-羟基果肉苷化合物的方法
公开(公告)号：US06433176B1
公开(公告)日：2002-08-13
申请号：US09793627
申请日：2001-02-27
申请人： Chao-Tsen Chen , Shao-Tzu Tang , Ling Lu , Jim-Min Fang
发明人： Chao-Tsen Chen , Shao-Tzu Tang , Ling Lu , Jim-Min Fang
IPC分类号： C07D45504
CPC分类号： C07D455/04
摘要： An 8-hydroxyjulolidine compound, having the formula: (wherein R1 and R2 represent independently H, halogen, hydroxyl or alkyl) is prepared by the following chemical reaction: wherein X and Y represent independently halogen, acyloxyl, sulfonyloxyl or phosphoryloxyl and R1 and R2 are as defined above.
摘要翻译：具有下式的8-羟基久洛尼定化合物（其中R1和R2独立地表示H，卤素，羟基或烷基）通过以下化学反应制备：其中X和Y独立地表示卤素，酰氧基，磺酰氧基或磷酰氧基，R1和R2 如上所述。

20. 发明授权

US08952457B2 Electrostatic discharge protection circuit 有权
标题翻译：静电放电保护电路
公开(公告)号：US08952457B2
公开(公告)日：2015-02-10
申请号：US12181545
申请日：2008-07-29
申请人： Shih-Yu Wang , Chia-Ling Lu , Yan-Yu Chen , Yu-Lien Liu , Tao-Cheng Lu
发明人： Shih-Yu Wang , Chia-Ling Lu , Yan-Yu Chen , Yu-Lien Liu , Tao-Cheng Lu
IPC分类号： H01L23/62 , H01L27/02
CPC分类号： H01L27/0266
摘要： An ESD protection circuit including a substrate of a first conductivity type, an annular well region of a second conductivity type, two first regions of the first conductivity type and at least one transistor of the second conductivity type is provided. The annular well region is disposed in the substrate. The first regions are disposed in the substrate and surrounded by the annular well region. The at least one transistor is disposed on the substrate between the first regions and including a source, a gate, and a drain. The annular well region and the drain are coupled to a first voltage source. The source and one of the first regions are coupled to a second voltage source, and the other of the first regions is coupled to a substrate triggering circuit.
摘要翻译：提供了包括第一导电类型的衬底，第二导电类型的环形阱区域，第一导电类型的两个第一区域和第二导电类型的至少一个晶体管的ESD保护电路。环形阱区域设置在基板中。第一区域设置在基板中并被环形区域包围。至少一个晶体管设置在第一区域之间的衬底上，并且包括源极，栅极和漏极。环形阱区域和漏极耦合到第一电压源。源极和第一区域中的一个耦合到第二电压源，并且第一区域中的另一个耦合到衬底触发电路。

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