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11. 发明申请

US20070017433A1 Process for producing single crystal and single crystal 失效
标题翻译：制造单晶和单晶的方法
公开(公告)号：US20070017433A1
公开(公告)日：2007-01-25
申请号：US10560581
申请日：2004-05-28
申请人： Masahiro Sakurada , Makoto Iida , Nobuaki Mitamura , Atsushi Ozaki
发明人： Masahiro Sakurada , Makoto Iida , Nobuaki Mitamura , Atsushi Ozaki
IPC分类号： C30B15/00 , C30B21/06 , C30B28/10 , C30B30/04 , C30B27/02
CPC分类号： C30B29/06 , C30B15/203
摘要： The present invention is a method for producing a single crystal with pulling the single crystal from a raw material melt in a chamber by CZ method, wherein when growing the single crystal, where a pulling rate is defined as V and a temperature gradient of the crystal is defined as G during growing the single crystal, the temperature gradient G of the crystal is controlled by changing at least two or more of pulling conditions including a diameter of the straight body of the single crystal, a rotation rate of the single crystal during pulling the single crystal, a flow rate of an inert-gas introduced into the chamber, a position of a heater heating the raw material melt and a distance between the melt surface of the raw material melt and a heat insulating member provided in the chamber so as to oppose to the surface of the raw material melt, thereby V/G which is a ratio of the pulling rate V and the temperature gradient G of the crystal is controlled so that a single crystal including a desired defect region is grown. Thereby, there is provided a method for producing a single crystal in which when the single crystal is grown by CZ method, V/G can be controlled without lowering a pulling rate V, and thus the single crystal including a desired defect region can be produced effectively for a short time.
摘要翻译：本发明是一种通过CZ法从室内的原料熔融物中拉出单晶的单晶的制造方法，其中，当生长单晶时，拉伸速度定义为V，晶体的温度梯度在生长单晶时被定义为G，通过改变至少两个或更多个拉丝条件来控制晶体的温度梯度G，所述拉伸条件包括单晶直直体的直径，拉伸期间单晶的旋转速率单晶，引入到室中的惰性气体的流量，加热原料熔体的加热器的位置以及原料熔体的熔融表面与设置在室中的绝热构件之间的距离，以便与原料熔体的表面相对，从而控制作为晶体的拉伸速度V与温度梯度G的比的V / G，使得包含生长期望的缺陷区域。因此，提供了一种单晶的制造方法，其中当通过CZ法生长单晶时，可以在不降低拉伸速度V的情况下控制V / G，从而可以产生包含所需缺陷区的单晶有效地在短时间内。

12. 发明申请

US20050187210A1 Method for treating severe heart failure and medicament therefor 有权
标题翻译：治疗严重心力衰竭的方法及其药物
公开(公告)号：US20050187210A1
公开(公告)日：2005-08-25
申请号：US10523020
申请日：2004-02-23
申请人： Atsushi Ozaki , Yosuke Maki , Osamu Sato , Yoshitaka Yamamura
发明人： Atsushi Ozaki , Yosuke Maki , Osamu Sato , Yoshitaka Yamamura
IPC分类号： A61K31/55 , A61P9/00 , C07D223/16
CPC分类号： A61K31/55
摘要： A method for treating severe heart failure, comprising administering to a patient an effective amount of a benzazepine compound (1): wherein R1 is H or halogen, R2 is OH, or —NR5R6 (R5 and R6 are H or lower alkyl, R3 is H, halogen, lower alkyl, or lower alkoxy, R4 is halogen, lower alkyl or lower alkoxy, or a salt thereof, and a pharmaceutical composition containing the benzazepine compound (1) or a salt thereof and use of the compound (1) or a salt thereof for preparing a medicament for treatment of severe heart failure.
摘要翻译：一种治疗严重心力衰竭的方法，包括向患者施用有效量的苯并氮杂化合物（1）：其中R 1为H或卤素，R 2为OH ，或-NR 5 R 6（R 5和R 6）是H或低级烷基，R SUB > 3是H，卤素，低级烷基或低级烷氧基，R 4是卤素，低级烷基或低级烷氧基或其盐，以及含有苯并氮杂化合物的药物组合物 1）或其盐和化合物（1）或其盐的用途，用于制备用于治疗严重心力衰竭的药物。

13. 发明授权

US5888299A Apparatus for adjusting initial position of melt surface 失效
标题翻译：用于调节熔体表面初始位置的装置
公开(公告)号：US5888299A
公开(公告)日：1999-03-30
申请号：US760963
申请日：1996-12-05
申请人： Masahiko Urano , Atsushi Ozaki , Tomohiro Kakegawa , Hideki Nakano
发明人： Masahiko Urano , Atsushi Ozaki , Tomohiro Kakegawa , Hideki Nakano
IPC分类号： C30B15/20 , C30B15/26 , C30B35/00
CPC分类号： C30B15/20 , C30B15/26 , Y10T117/1004 , Y10T117/1008
摘要： An apparatus and a method capable of automatically adjusting an initial position of the surface of a melt without an operator are provided. In a single crystal puller using a wire as a suspender for a seed crystal for growing a single crystal of silicon or the like according to the CZ method, a reference position of the seed crystal is detected, the wire is unwound to lower the end of the wire to a position higher by a distance W-X from the reference position and then pulled upward above said reference position to correct the wire for an extension due to the weight of a single crystal attached thereto. Also, the wire is left above a melt for about ten minutes to provide a constant amount of extension to the wire due to heat of the melt These operations are automatically performed.
摘要翻译：提供一种能够自动调节熔体表面的初始位置而不需要操作者的装置和方法。在根据CZ方法使用线作为用于生长硅等单晶的晶种的悬挂器的单晶拉拔器中，检测到晶种的参考位置，使线退绕以降低该线材从参考位置到距离WX更高的位置，然后在所述参考位置上方向上拉，以便由于连接到其上的单晶体的重量来校正线材的延伸。此外，将线材保留在熔体上方约十分钟，以由于熔体的热量而提供恒定量的延伸线。这些操作被自动执行。

14. 发明授权

US5223078A Conical portion growth control method and apparatus 失效
标题翻译： CONICAL部分生长控制方法和装置
公开(公告)号：US5223078A
公开(公告)日：1993-06-29
申请号：US776774
申请日：1991-10-15
申请人： Akiho Maeda , Atsushi Ozaki
发明人： Akiho Maeda , Atsushi Ozaki
IPC分类号： C30B15/20 , C30B15/22 , C30B29/06
CPC分类号： C30B15/22 , Y10S117/902 , Y10T117/1008
摘要： A conical portion growth control method and an apparatus used in the method grow a conical portion 32B of a single crystal rod 32 by pulling the crystal rod from a melt 16 heated by a heater 14 in the Czochralski method, and aim to enhance reproducibility of the shape of the conical portion 32B and shorten the conical portion 32B. The control method has the steps of presetting a target value pattern 66 of the temperature of a concave portion 46 formed on a heat-insulating material 18 and a target value pattern 64 of the diameter change rate of a growing portion of the crystal rod, measuring the diameter of the crystal growing portion, calculating the change rate of the diameter, measuring the temperature of the concave portion, correcting the target temperature based on a difference between the calculated value and the target value of the diameter change rate, and controlling the amount of electricity supplied to the heater so that the measured temperature becomes equal to the corrected target temperature.

15. 发明授权

US5169977A Process for purifying dimethyl-2,6-naphthalene dicarboxylate 失效
标题翻译：二甲基-2,6-萘二甲酸二甲酯的制备方法
公开(公告)号：US5169977A
公开(公告)日：1992-12-08
申请号：US669247
申请日：1991-03-14
申请人： Toru Tanaka , Masami Matsumoto , Atsushi Ozaki , Hideaki Fujita
发明人： Toru Tanaka , Masami Matsumoto , Atsushi Ozaki , Hideaki Fujita
IPC分类号： C07C67/56
CPC分类号： C07C67/56
摘要： A process for purifying crude 2,6-naphthalene dimethyl dicarboxylate (hereinunder referred to as 2,6-NDM) which comprises dissolving the crude 2,6-NDM into a C.sub.6 -C.sub.9 aromatic hydrocarbon, then contacting the solution of 2,6-NDM and the hydrocarbon with an hydrotalcite-like laminar crystalline compound and activated carbon, then carrying out thermal filtration of the solution, and then cooling the solution to separate 2,6-NDM crystal from the solution is disclosed.

16. 发明授权

US07749993B2 Method for treating severe heart failure and medicament therefor 有权
标题翻译：治疗严重心力衰竭的方法及其药物
公开(公告)号：US07749993B2
公开(公告)日：2010-07-06
申请号：US12149578
申请日：2008-05-05
申请人： Atsushi Ozaki , Yôsuke Maki , Osamu Sato , Yoshitaka Yamamura
发明人： Atsushi Ozaki , Yôsuke Maki , Osamu Sato , Yoshitaka Yamamura
IPC分类号： A61K31/55
CPC分类号： A61K31/55
摘要： A method for treating severe heart failure, comprising administering to a patient an effective amount of a benzazepine compound (1): wherein R1 is H or halogen, R2 is OH, or —NR5R6 (R5 and R6 are H or lower alkyl, R3 is H, halogen, lower alkyl, or lower alkoxy, R4 is halogen, lower alkyl or lower alkoxy, or a salt thereof, and a pharmaceutical composition containing the benzazepine compound (1) or a salt thereof and use of the compound (1) or a salt thereof for preparing a medicament for treatment of severe heart failure.
摘要翻译：一种治疗严重心力衰竭的方法，包括向患者施用有效量的苯并氮杂化合物（1）：其中R1是H或卤素，R2是OH或-NR5R6（R5和R6是H或低级烷基，R3是 H，卤素，低级烷基或低级烷氧基，R 4为卤素，低级烷基或低级烷氧基或其盐，以及含有苯并氮杂化合物（1）或其盐的药物组合物和化合物（1）或其盐，用于制备用于治疗严重心力衰竭的药物。

17. 发明授权

US07323048B2 Method for producing a single crystal and a single crystal 失效
标题翻译：单晶和单晶的制造方法
公开(公告)号：US07323048B2
公开(公告)日：2008-01-29
申请号：US10561205
申请日：2004-05-28
申请人： Masahiro Sakurada , Makoto Iida , Nobuaki Mitamura , Atsushi Ozaki
发明人： Masahiro Sakurada , Makoto Iida , Nobuaki Mitamura , Atsushi Ozaki
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/203
摘要： A method for producing a single crystal in which when the single crystal is grown by Czochralski method, V/G is controlled by controlling a fluctuation of a temperature gradient G of the crystal which is being pulled without lowering a pulling rate V, thereby the single crystal including a desired defect region over a whole plane in a radial direction of the crystal entirely in a direction of the crystal growth axis can be produced effectively for a short time at a high yield.
摘要翻译：一种单晶的制造方法，其中，当通过Czochralski法生长单晶时，通过控制正在拉动的晶体的温度梯度G的波动来控制V / G，而不降低拉伸速率V，从而单可以在晶体生长轴方向上在整个晶体的径向方向上的整个平面上包括期望的缺陷区域的产物在短时间内以高产率有效地产生。

18. 发明授权

US5985431A Prepreg, and a fiber reinforced composite material 失效
标题翻译：预浸料和纤维增强复合材料
公开(公告)号：US5985431A
公开(公告)日：1999-11-16
申请号：US682761
申请日：1996-12-10
申请人： Hiroki Oosedo , Atsushi Ozaki , Hideo Nagata
发明人： Hiroki Oosedo , Atsushi Ozaki , Hideo Nagata
IPC分类号： C08G59/20 , C08G59/32 , C08G59/38 , C08G59/50 , C08J5/24 , C08L63/00 , B32B27/04 , B32B5/16 , B32B27/38
CPC分类号： C08J5/24 , C08G59/20 , C08G59/3227 , C08G59/38 , C08G59/5033 , C08L63/00 , C08J2363/00 , Y10T428/24994 , Y10T428/25 , Y10T428/254 , Y10T428/31511 , Y10T428/31721 , Y10T428/31725 , Y10T428/31728 , Y10T428/31786 , Y10T428/31942
摘要： A prepreg comprising (a) reinforcing fibers and (b) a matrix resin which comprises specific epoxy resin composition, a curing agent with a specific structure and a highly heat resistant thermoplastic resin, the cured product of which has a low water absorption. An interlayer toughened prepreg containing reinforcing fibers and a matrix resin comprising a specific epoxy resin composition, a hardening agent with a specific structure and a highly heat resistant thermoplastic resin is also provided. In addition, a cured product can be obtained by curing any of the above prepregs, which product satisfies both impact resistance (residual compressive strength after impact) and heat and wet property (compressive strength of notched coupon at high temperature and high humidity) at high levels, even though these properties have been in contradictory relation in the conventional techniques.
摘要翻译： PCT No.PCT / JP95 / 02474。 371日期1996年12月10日第 102（e）日期1996年12月10日PCT 1995年12月4日PCT PCT。公开号WO96 / 日期：1996年6月6日一种预浸料，其包含（a）增强纤维和（b）包含特定环氧树脂组合物的基质树脂，具有特定结构的固化剂和高耐热性热塑性树脂，其固化产物具有低吸水。还提供了含有增强纤维的层间增韧预浸料和包含特定环氧树脂组合物的基质树脂，具有特定结构的硬化剂和高耐热性热塑性树脂。此外，通过固化上述预浸料，可以获得固化产物，该产品满足耐冲击性（冲击后的残余压缩强度）和高和湿性（高温高湿下的缺口试样的抗压强度）高水平，即使这些性质在常规技术中是相互矛盾的关系。

19. 发明授权

US5282166A Serial access memory comprising disconnecting circuit between serial bus lines and preamplifier 失效
标题翻译：串行存取存储器包括在串行总线和前置放大器之间断开电路
公开(公告)号：US5282166A
公开(公告)日：1994-01-25
申请号：US825214
申请日：1992-01-24
申请人： Atsushi Ozaki
发明人： Atsushi Ozaki
IPC分类号： G11C8/04 , G11C7/06 , G11C7/12 , G11C11/401 , G11C11/409 , G11C11/417 , G11C7/00
CPC分类号： G11C7/12 , G11C7/062 , G11C7/065
摘要： An improved serial access memory without erroneous reading where a faster reading operation is required. The serial access memory includes a disconnecting circuit connected between a serial bus line pair and a preamplifier. A data signal read out from a memory cell is provided to the preamplifier via the serial bus line pair. The disconnecting circuit electrically disconnects the serial bus line pair from the preamplifier after a predetermined time has elapsed since the preamplifier commences amplifying operation. An equalize circuit commences equalization of a next data signal right after the operation of the disconnecting circuit. Since the equalize timing of the serial bus line pair for reading the next data is made to commence earlier, proper reading operation can be realized even if the frequency of an externally applied serial out clock signal SOC is increased.
摘要翻译：改进的串行访问存储器，而不需要更快读取操作的错误读取。串行存取存储器包括连接在串行总线对和前置放大器之间的断开电路。从存储单元读出的数据信号通过串行总线对提供给前置放大器。在从前置放大器开始放大操作经过预定时间之后，断开电路将串行总线线对与前置放大器电气断开。均衡电路在断开电路的操作之后开始下一个数据信号的均衡。由于用于读取下一个数据的串行总线线对的均衡时间早于开始，因此即使外部施加的串行输出时钟信号SOC的频率增加，也可以实现适当的读取操作。

20. 发明授权

US5131974A Method of controlling oxygen concentration in single crystal and an apparatus therefor 失效
标题翻译：单晶中的氧浓度控制方法及其装置
公开(公告)号：US5131974A
公开(公告)日：1992-07-21
申请号：US614760
申请日：1990-11-16
申请人： Tetsuhiro Oda , Susumu Sonokawa , Atsushi Ozaki , Toshio Hisaichi
发明人： Tetsuhiro Oda , Susumu Sonokawa , Atsushi Ozaki , Toshio Hisaichi
IPC分类号： C30B15/20 , C30B15/00 , C30B29/06
CPC分类号： C30B29/06 , C30B15/00
摘要： A method for controlling an oxygen concentration of a single crystal which is pulled up in a Czochralski-method type single crystal pulling apparatus having a hermetical chamber in which the single crystal is pulled up and an inert gas supply and exhaust system by means of which an inert gas is supplied to the hermetical chamber and exhausted therefrom; the method being characterized in that the pneumatic pressure in the hermetical chamber and the supply rate of the inert gas are controlled in accordance with a prepared control pattern with respect to the proportion of the length of the as-grown crystal to the aimed final length thereof or with respect to the passage of time.

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