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1. 发明授权

US07588638B2 Single crystal pulling apparatus 有权
标题翻译：单晶拉丝机
公开(公告)号：US07588638B2
公开(公告)日：2009-09-15
申请号：US12021828
申请日：2008-01-29
申请人： Toshio Hisaichi
发明人： Toshio Hisaichi
IPC分类号： C30B35/00
CPC分类号： C30B15/305 , C30B15/14 , C30B29/06 , Y10S117/90 , Y10T117/10 , Y10T117/1024 , Y10T117/1068 , Y10T117/1072
摘要： A single crystal pulling apparatus having a heater 4 melting material silicon by thermal radiation from a cylindrical exothermic part 4a which surrounds a crucible 3 inside a furnace body 2 and an electromagnet 13 which is prepared to surround the furnace body 2 and applies a transverse magnetic field to the silicon liquid melt in the crucible 3 is provided. A length h in a pull-up axis direction in the exothermic part 4a of the heater 4 is arranged to be 0.5 times to 0.9 times an inner diameter of the crucible 3, a first middle position in the pull-up axis direction in the exothermic part 4a is arranged below a second middle position in the pull-up axis direction in the electromagnet 13, and a distance difference d between the first and second middle positions is 0.15 times to 0.55 times the inner diameter R of the crucible 3.
摘要翻译：具有加热器4的单晶拉制装置，该加热器4通过围绕炉体2内的坩埚3的圆柱形放热部分4a的热辐射熔化材料硅，以及制备为围绕炉体2并施加横向磁场的电磁体13 提供了坩埚3中的硅液体熔体。加热器4的放热部4a中的上拉轴方向的长度h被配置为坩埚3的内径的0.5倍〜0.9倍，放热轴向上的第一中间位置部分4a布置在电磁体13的上拉轴方向上的第二中间位置的下方，第一和第二中间位置之间的距离差d为坩埚3的内径R的0.15倍至0.55倍。

2. 发明申请

US20080184929A1 SINGLE CRYSTAL PULLING APPARATUS 有权
标题翻译：单晶拉丝装置
公开(公告)号：US20080184929A1
公开(公告)日：2008-08-07
申请号：US12021828
申请日：2008-01-29
申请人： Toshio HISAICHI
发明人： Toshio HISAICHI
IPC分类号： C30B35/00
CPC分类号： C30B15/305 , C30B15/14 , C30B29/06 , Y10S117/90 , Y10T117/10 , Y10T117/1024 , Y10T117/1068 , Y10T117/1072
摘要： A single crystal pulling apparatus having a heater 4 melting material silicon by thermal radiation from a cylindrical exothermic part 4a which surrounds a crucible 3 inside a furnace body 2 and an electromagnet 13 which is prepared to surround the furnace body 2 and applies a transverse magnetic field to the silicon liquid melt in the crucible 3 is provided. A length h in a pull-up axis direction in the exothermic part 4a of the heater 4 is arranged to be 0.5 times to 0.9 times an inner diameter of the crucible 3, a first middle position in the pull-up axis direction in the exothermic part 4a is arranged below a second middle position in the pull-up axis direction in the electromagent 13, and a distance difference d between the first and second middle positions is 0.15 times to 0.55 times the inner diameter R of the crucible 3.
摘要翻译：具有加热器4的单晶拉制装置，该加热器4通过热辐射熔化材料硅，该圆柱形放热部分4a围绕炉体2内的坩埚3和电磁体13，电磁体13准备围绕炉体2并施加横向磁提供了坩埚3中的硅液体熔融的场。加热器4的放热部分4a中的上拉轴方向上的长度h被设置为坩埚3的内径的0.5倍至0.9倍，在上升轴方向上的第一中间位置放热部分4a被布置在电磁体13的上拉轴方向的第二中间位置的下方，第一和第二中间位置之间的距离差d是坩埚3的内径R的0.15倍至0.55倍。

3. 发明申请

US20100101485A1 Manufacturing method of silicon single crystal 审中-公开
标题翻译：硅单晶的制造方法
公开(公告)号：US20100101485A1
公开(公告)日：2010-04-29
申请号：US12588391
申请日：2009-10-14
申请人： Senlin Fu , Toshio Hisaichi
发明人： Senlin Fu , Toshio Hisaichi
IPC分类号： C30B15/22
CPC分类号： C30B29/06 , C30B15/305
摘要： In appropriate setting of magnetic field applied to a molten silicon 12 stored in a cylindrical quartz crucible 11, the maximum value B0 of magnetic flux density on a vertical symmetric axis 17 as a cylindrical axis of the quartz crucible 11 in horizontal magnetic field generated by a pair of exciting coils 13 and 14 calls B0. On circle at which horizontally symmetric plane 18 traversing and perpendicular to a vertically symmetric axis 17 becoming magnetic flux B0 crosses an inner diameter of the quartz crucible 11, the minimum value of magnetic flux density calls Bmin, and the maximum value of magnetic flux density calls Bmax. Those magnetic flux densities B0, Bmin and Bmax are adjusted to be given ranges, and upward flow and temperature of a molten silicon 12 at the lower part of a solid-liquid interface 15a are appropriately controlled.
摘要翻译：在施加到存储在圆柱形石英坩埚11中的熔融硅12上的磁场的适当设定中，作为石英坩埚11的圆柱轴的垂直对称轴17上的磁通密度的最大值B0在水平磁场中由一对励磁线圈13和14调用B0。在水平对称平面18横穿并垂直于成为磁通B0的垂直对称轴17的圆上，与石英坩埚11的内径交叉，磁通密度的最小值调用Bmin，并且磁通密度的最大值调用最大将这些磁通密度B0，Bmin和Bmax调节为给定范围，并且适当地控制固 - 液界面15a下部的熔融硅12的向上流动和温度。

4. 发明授权

US6153009A Method for producing a silicon single crystal and the silicon single crystal produced thereby 失效
标题翻译：制造硅单晶的方法和由此制造的硅单晶
公开(公告)号：US6153009A
公开(公告)日：2000-11-28
申请号：US270277
申请日：1999-03-16
申请人： Toshiharu Uesugi , Toshio Hisaichi , Izumi Fusegawa , Tomohiko Ohta , Tetsuya Igarashi , Tetsuhiro Oda
发明人： Toshiharu Uesugi , Toshio Hisaichi , Izumi Fusegawa , Tomohiko Ohta , Tetsuya Igarashi , Tetsuhiro Oda
IPC分类号： C30B15/00 , C30B15/20
CPC分类号： C30B29/06 , C30B15/00
摘要： In a Czochralski method for producing a silicon single crystal by growing the crystal, the pulling rate of the single crystal is gradually increased during formation of a tail part after formation of a predetermined or constant diameter part of the single crystal. The length t of the tail part is defined to be a or more, where a represents a distance from the tip end of the tail part to a position of an extraordinary oxygen precipitation area when the tail part is formed after the predetermined or constant diameter part is grown. Productivity and yield of the silicon single crystal are improved by preventing rapid change in temperature while the single crystal is separated from the melt in the tailing process, to suppress generation of an area where the amount of precipitated oxygen is extraordinarily large and an OSF ring due to rapid increase in temperature when the tail part is formed, in the predetermined or constant diameter part near the tail part.
摘要翻译：在通过生长晶体生产硅单晶的切克劳斯基法中，在形成单晶的预定或恒定直径部分之后形成尾部部分期间，单晶的拉伸速率逐渐增加。尾部的长度t被定义为一个或多个，其中a表示当尾部在预定的或恒定的直径部分之后形成时从尾部的末端到非常的氧沉淀区域的位置的距离长大了通过在拖尾工序中从熔体中分离单晶而防止温度快速变化，提高硅单晶的生产率和产率，抑制沉淀氧量异常大的区域和OSF环的产生当尾部形成时，在靠近尾部的预定或恒定直径部分中的温度快速增加。

5. 发明授权

US5131974A Method of controlling oxygen concentration in single crystal and an apparatus therefor 失效
标题翻译：单晶中的氧浓度控制方法及其装置
公开(公告)号：US5131974A
公开(公告)日：1992-07-21
申请号：US614760
申请日：1990-11-16
申请人： Tetsuhiro Oda , Susumu Sonokawa , Atsushi Ozaki , Toshio Hisaichi
发明人： Tetsuhiro Oda , Susumu Sonokawa , Atsushi Ozaki , Toshio Hisaichi
IPC分类号： C30B15/20 , C30B15/00 , C30B29/06
CPC分类号： C30B29/06 , C30B15/00
摘要： A method for controlling an oxygen concentration of a single crystal which is pulled up in a Czochralski-method type single crystal pulling apparatus having a hermetical chamber in which the single crystal is pulled up and an inert gas supply and exhaust system by means of which an inert gas is supplied to the hermetical chamber and exhausted therefrom; the method being characterized in that the pneumatic pressure in the hermetical chamber and the supply rate of the inert gas are controlled in accordance with a prepared control pattern with respect to the proportion of the length of the as-grown crystal to the aimed final length thereof or with respect to the passage of time.

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