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1. 发明申请

US20060174819A1 Method for producing single crystal and single crystal 有权
标题翻译：单晶和单晶的制造方法
公开(公告)号：US20060174819A1
公开(公告)日：2006-08-10
申请号：US10561865
申请日：2004-05-27
申请人： Nobuaki Mitamura , Tomohiko Ohta , Izumi Fusegawa , Masahiro Sakurada , Atsushi Ozaki
发明人： Nobuaki Mitamura , Tomohiko Ohta , Izumi Fusegawa , Masahiro Sakurada , Atsushi Ozaki
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B29/06 , C30B15/203
摘要： The present invention is a method for producing a single crystal of which a whole plane in a radial direction is a defect-free region with pulling the single crystal from a raw material melt in a chamber by Czochralski method, wherein a pulling condition is changed in a direction of the crystal growth axis during pulling the single crystal so that a margin of a pulling rate is always a predetermined value or more that the single crystal of which the whole plane in a radial direction is a defect-free region can be pulled. Thereby, there can be provided a method for producing a single crystal in which when a single crystal is produced by CZ method, the single crystal of which a whole plane in a radial direction is a defect-free region entirely in a direction of the crystal growth axis can be produced with stability.
摘要翻译：本发明是一种单晶的制造方法，其中，通过Czochralski法从室内的原料熔融物中拉出单晶，其径向全平面为无缺陷区域，其中拉拔条件发生变化拉伸单晶时的晶体生长轴的方向，使得拉伸速度的余量总是预先确定的值以上，使得整个平面在径向方向上的单晶是无缺陷区域。因此，可以提供一种单晶的制造方法，其中当通过CZ法制造单晶时，其整个平面在径向方向上的无缺陷区域的单晶完全在晶体的方向上生长轴可以稳定地生产。

2. 发明授权

US6027794A Prepregs, processes for their production, and composite laminates 失效
标题翻译：预浸料，生产工艺和复合层压板
公开(公告)号：US6027794A
公开(公告)日：2000-02-22
申请号：US999931
申请日：1997-08-08
申请人： Atsushi Ozaki , Hajime Kishi , Nobuyuki Odagiri , Hiroki Oosedo , Hiroaki Hinomiya
发明人： Atsushi Ozaki , Hajime Kishi , Nobuyuki Odagiri , Hiroki Oosedo , Hiroaki Hinomiya
IPC分类号： C08J5/24 , B32B27/04
CPC分类号： C08J5/24 , B29K2301/12 , Y10T428/249927 , Y10T428/249933 , Y10T428/249934 , Y10T428/24994 , Y10T428/249941 , Y10T428/249942 , Y10T428/249949 , Y10T428/24995 , Y10T442/2877 , Y10T442/2885 , Y10T442/2893 , Y10T442/291 , Y10T442/2918 , Y10T442/2951 , Y10T442/659
摘要： Prepregs, comprising the following components [A], [B] and [C], with the component [C] distributed near either or both of the surface layers without being regularly arranged.[A]: Long reinforcing fibers[B]: A matrix resin[C]: Long thermoplastic resin fibersThe prepregs of the present invention are tacky and drapable, and the composite materials obtained by heating and forming the prepregs are high in heat resistance, and very high in impact resistance and inter-layer toughness. Furthermore, the prepregs are easy to produce and high in their latitude in availability of materials.
摘要翻译：包含以下组分[A]，[B]和[C]的预浸料，组分[C]分布在任何一个或两个表面层附近，而不经常排列。 [A]：长增强纤维[B]：基体树脂[C]：长的热塑性树脂纤维本发明的预浸料是粘性和可悬挂性的，通过加热和形成预浸料获得的复合材料的耐热性高，并且耐冲击性和层间韧性非常高。此外，预浸料容易生产，并且在材料可用性方面的纬度高。

3. 发明授权

US4985641A Semiconductor integrated circuit device having selectable operational functions 失效
标题翻译：具有可选操作功能的半导体集成电路器件
公开(公告)号：US4985641A
公开(公告)日：1991-01-15
申请号：US315084
申请日：1989-02-24
申请人： Yasuji Nagayama , Atsushi Ozaki
发明人： Yasuji Nagayama , Atsushi Ozaki
IPC分类号： H01L21/822 , G11C11/401 , H01L21/82 , H01L27/04 , H01L27/118 , H03K17/22 , H03K19/173
CPC分类号： H03K17/223 , H01L27/118 , H03K17/22 , H01L2924/0002
摘要： A semiconductor integrated circuit device for setting operational functions dependent on connection of a first bonding pad (20) to a power supply includes switching transistors (Q11, Q40, Q52, Q32) for resetting an input signal line (30) connected to the first bonding pad to a predetermined potential when there is no power supply potential applied to the first bonding pad immediately after turn-on of an operation power supply, at least one inverter (Q3, Q4, Q13, Q14; Q42, Q43; Q50, Q51) responsive to the turn-on of the power supply for the device, for setting and maintaining the potential on the input signal line, and switching transistors (Q12; Q32; Q41; Q52) to be turned on in response to output of the inverter, for cutting off a current path from the power supply through the bonding pad to the input signal line.
摘要翻译：用于根据第一接合焊盘（20）与电源的连接来设定操作功能的半导体集成电路装置包括用于复位与第一接合（20）连接的输入信号线（30）的开关晶体管（Q11，Q40，Q52，Q32）至少一个逆变器（Q3，Q4，Q13，Q14; Q42，Q43; Q50，Q51），在操作电源接通后立即施加到第一焊盘上的电源电位，响应于所述装置的电源的接通，用于设置和维持所述输入信号线上的电位，以及响应于所述逆变器的输出而导通的开关晶体管（Q12; Q32; Q41; Q52）用于切断从电源通过接合焊盘到输入信号线的电流路径。

4. 发明授权

US07423032B2 Method for treating severe heart failure and medicament therefor 有权
标题翻译：治疗严重心力衰竭的方法及其药物
公开(公告)号：US07423032B2
公开(公告)日：2008-09-09
申请号：US10523020
申请日：2004-02-23
申请人： Atsushi Ozaki , Yosuke Maki , Osamu Sato , Yoshitaka Yamamura
发明人： Atsushi Ozaki , Yosuke Maki , Osamu Sato , Yoshitaka Yamamura
IPC分类号： A61K31/55
CPC分类号： A61K31/55
摘要： A method for treating severe heart failure, comprising administering to a patient an effective amount of a benzazepine compound (1): wherein R1 is H or halogen, R2 is OH, or —NR5R6 (R5 and R6 are H or lower alkyl, R3 is H, halogen, lower alkyl, or lower alkoxy, R4 is halogen, lower alkyl or lower alkoxy, or a salt thereof, and a pharmaceutical composition containing the benzazepine compound (1) or a salt thereof and use of the compound (1) or a salt thereof for preparing a medicament for treatment of severe heart failure
摘要翻译：一种治疗严重心力衰竭的方法，包括向患者施用有效量的苯并氮杂化合物（1）：其中R 1为H或卤素，R 2为OH ，或-NR 5 R 6（R 5和R 6）是H或低级烷基，R SUB > 3是H，卤素，低级烷基或低级烷氧基，R 4是卤素，低级烷基或低级烷氧基或其盐，以及含有苯并氮杂化合物的药物组合物 1）或其盐和化合物（1）或其盐的用途，用于制备用于治疗严重心力衰竭的药物

5. 发明申请

US20080214523A1 Method for treating severe heart failure and medicament therefor 有权
标题翻译：治疗严重心力衰竭的方法及其药物
公开(公告)号：US20080214523A1
公开(公告)日：2008-09-04
申请号：US12149578
申请日：2008-05-05
申请人： Atsushi Ozaki , Yosuke Maki , Osamu Sato , Yoshitaka Yamamura
发明人： Atsushi Ozaki , Yosuke Maki , Osamu Sato , Yoshitaka Yamamura
IPC分类号： A61K31/55 , A61P9/04
CPC分类号： A61K31/55
摘要： A method for treating severe heart failure, comprising administering to a patient an effective amount of a benzazepine compound (1): wherein R1 is H or halogen, R2 is OH, or —NR5R6 (R5 and R6 are H or lower alkyl, R3 is H, halogen, lower alkyl, or lower alkoxy, R4 is halogen, lower alkyl or lower alkoxy, or a salt thereof, and a pharmaceutical composition containing the benzazepine compound (1) or a salt thereof and use of the compound (1) or a salt thereof for preparing a medicament for treatment of severe heart failure.
摘要翻译：一种治疗严重心力衰竭的方法，包括向患者施用有效量的苯并氮杂化合物（1）：其中R 1为H或卤素，R 2为OH ，或-NR 5 R 6（R 5和R 6）是H或低级烷基，R SUB > 3是H，卤素，低级烷基或低级烷氧基，R 4是卤素，低级烷基或低级烷氧基或其盐，以及含有苯并氮杂化合物的药物组合物 1）或其盐和化合物（1）或其盐的用途，用于制备用于治疗严重心力衰竭的药物。

6. 发明授权

US5876496A Method for feeding a granular raw material and feeding apparatus 失效
标题翻译：颗粒状原料供给装置的供给方法
公开(公告)号：US5876496A
公开(公告)日：1999-03-02
申请号：US827105
申请日：1997-03-17
申请人： Naoki Nagai , Chihiro Tashiro , Atsushi Ozaki , Michiaki Oda
发明人： Naoki Nagai , Chihiro Tashiro , Atsushi Ozaki , Michiaki Oda
IPC分类号： C30B15/02 , C30B29/06
CPC分类号： C30B15/02 , Y10T117/1056 , Y10T117/1064
摘要： A feeding reservoir 11 for intermittently or continuously feeding granular raw material into a pulling apparatus 1, a chamber 13 connected to the feeding reservoir 11 through a gate valve 12, a granular raw material supply section 15 by which the granular raw material is supplied to the chamber 13 through a gate valve 14 and a pressure adjustment means 20 which adjusts the inner pressure of the chamber 13 is provided, and the granular raw material is fed to the feeding reservoir 11 while maintaining the inner pressure of the feeding reservoir 11 as the same as the inner pressure of the single crystal pulling apparatus 1. This feeding method and structure makes it possible to feed an additional amount of granular raw material even during the continuous charging process and or the recharging process without interrupting the process and also to pull a heavy single crystal rod with a large diameter without increasing the capacity of the feeding reservoir.
摘要翻译：用于将颗粒状原料间歇地或连续地供给到牵引装置1的供给储存器11，通过闸阀12连接到供给储存器11的室13，粒状原料供给部15，向颗粒状原料供给部设置通过闸阀14的室13和调节室13的内部压力的压力调节装置20，并且将颗粒状原料供给到供给储存器11，同时保持供给储存器11的内部压力相同作为单晶拉制装置1的内压。该供给方法和结构使得即使在连续充电过程和充电过程中也可以不间断地进行加工而再次加入附加量的颗粒状原料单晶棒直径大，不增加供料槽的容量。

7. 发明授权

US5851286A Crystal pulling apparatus 失效
标题翻译：水晶拉机
公开(公告)号：US5851286A
公开(公告)日：1998-12-22
申请号：US763888
申请日：1996-12-11
申请人： Atsushi Ozaki , Masahiko Urano , Isamu Harada , Tomohiro Kakegawa , Hideki Nakano
发明人： Atsushi Ozaki , Masahiko Urano , Isamu Harada , Tomohiro Kakegawa , Hideki Nakano
IPC分类号： C30B15/00 , C30B15/14 , C30B35/00
CPC分类号： C30B15/14 , Y10S117/90 , Y10T117/1004 , Y10T117/1008
摘要： A crystal pulling apparatus is disclosed which employs the Czochralski method. The crystal pulling apparatus is operated while a heater for heating a material melt in a crucible is controlled by the main controller of a main system. When maintenance of a heating state is disabled for some reason, a relay of a signal changeover circuit is switched so as to maintain the heating state under control of the backup controller of a backup system, thereby maintaining the material melt in a molten state. Thus, even when it becomes impossible for the main system to heat the material melt within the crucible, the material melt can be prevented from becoming solidified.
摘要翻译：公开了采用Czochralski法的晶体拉制装置。在通过主系统的主控制器控制用于加热坩埚中的材料熔化的加热器的同时操作晶体拉制装置。当由于某种原因禁用加热状态的维持时，切换信号切换电路的继电器，以便在备用系统的备用控制器的控制下保持加热状态，从而将材料熔体保持在熔融状态。因此，即使主体系不可能在坩埚内加热材料熔融物，也可以防止材料熔融变得凝固。

8. 发明授权

US5484326A Semiconductor ingot machining method 失效
标题翻译：半导体锭加工方法
公开(公告)号：US5484326A
公开(公告)日：1996-01-16
申请号：US159501
申请日：1993-11-30
申请人： Yoshihiro Hirano , Atsushi Ozaki
发明人： Yoshihiro Hirano , Atsushi Ozaki
IPC分类号： B24B1/00 , B23D5/00 , B28D1/22 , B28D5/00 , B28D5/02 , C30B33/00 , G01N23/207 , H01L21/304 , B24B7/00
CPC分类号： B24B5/50 , B23D5/00 , C30B33/00
摘要： The cutting process is executed after the grinding process and for one semiconductor ingot, one grinding device and one inner diameter saw slicing machine are used to perform grinding process and cutting process respectively. During the grinding process, the entirety of the cylindrical body portion of the semiconductor ingot is cylindrically ground, a portion of the tail end is cylindrically ground, the orientation flat position is determined and an orientation flat is formed by surface grinding. During the cutting process the tail portion is cut off and a sample for lifetime measurement is taken and a wafer sample is cut off from the end of the cylindrical body portion on the tail side. The semiconductor ingot is reversed in the direction of the axis and the head portion of the semiconductor ingot is cut off and a wafer sample is cut off from the cylindrical body portion on the head side. Wafer samples are cut off from the end of the cylindrical body portion on the head side and from the middle portion of cylindrical body portion to divide the cylindrical body portion into two blocks.
摘要翻译：在研磨过程之后执行切割过程，并且对于一个半导体锭，一个研磨装置和一个内径锯切机分别进行研磨处理和切割处理。在研磨过程中，半导体锭的圆筒体部分的整体是圆柱形的，尾端的一部分是圆柱形的，确定取向平面位置，并通过表面研磨形成取向平面。在切割过程中，尾部被切断，并且进行寿命测量的样品，并且从尾侧的圆柱体部分的端部切下晶片样品。半导体锭在轴线方向上反转，并且半导体锭的头部被切断，并且晶片样品从头侧的圆柱形主体部分切除。将晶片样品从头侧的圆筒体部分的端部和圆筒体部分的中间部分切除，以将圆柱体部分分成两个块。

9. 发明授权

US5370077A Single crystal rod pull-up growing apparatus 失效
标题翻译：单晶棒上拉生长装置
公开(公告)号：US5370077A
公开(公告)日：1994-12-06
申请号：US933375
申请日：1992-08-24
申请人： Yoshihiro Hirano , Atsushi Ozaki , Masahiko Urano
发明人： Yoshihiro Hirano , Atsushi Ozaki , Masahiko Urano
IPC分类号： C30B15/20
CPC分类号： C30B15/20 , Y10T117/1004 , Y10T117/1032
摘要： The present invention provides control of single crystal growth after the recovery from power failure when controlling crystal growth in an automatic mode. A source voltage is supplied to a controller 70 through a no-break power supply 62. At the time of recovery from power failure, the controller continues the automatic operation mode with the same control output as that stored when power failure is detected (84, 85) if the power failure time t is t .ltoreq.t.sub.1 (for example, 1 second), switches the control mode to the manual control mode with the same control output as that stored when the power failure is detected (86, 87) if t.sub.1 t.sub.3.
摘要翻译：本发明在控制自动模式下的晶体生长的同时，提供从断电恢复之后对单晶生长的控制。源电压通过无断开电源62提供给控制器70.在电源故障恢复时，控制器以与检测到电源故障时存储的控制输出相同的控制输出继续自动运行模式（84， 85）如果电源故障时间t为t <= = t1（例如1秒），则以与检测到电源故障时存储的控制输出相同的控制输出将控制模式切换到手动控制模式（86,87）如果t1 t3则向上移动坩埚16（90），将生长的晶体与熔体22分离。

10. 发明授权

US07226507B2 Method for producing single crystal and single crystal 有权
标题翻译：单晶和单晶的制造方法
公开(公告)号：US07226507B2
公开(公告)日：2007-06-05
申请号：US10561865
申请日：2004-05-27
申请人： Nobuaki Mitamura , Tomohiko Ohta , Izumi Fusegawa , Masahiro Sakurada , Atsushi Ozaki
发明人： Nobuaki Mitamura , Tomohiko Ohta , Izumi Fusegawa , Masahiro Sakurada , Atsushi Ozaki
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/203
摘要： The present invention is a method for producing a single crystal of which a whole plane in a radial direction is a defect-free region with pulling the single crystal from a raw material melt in a chamber by Czochralski method, wherein a pulling condition is changed in a direction of the crystal growth axis during pulling the single crystal so that a margin of a pulling rate is always a predetermined value or more that the single crystal of which the whole plane in a radial direction is a defect-free region can be pulled. Thereby, there can be provided a method for producing a single crystal in which when a single crystal is produced by CZ method, the single crystal of which a whole plane in a radial direction is a defect-free region entirely in a direction of the crystal growth axis can be produced with stability.
摘要翻译：本发明是一种单晶的制造方法，其中，通过Czochralski法从室内的原料熔融物中拉出单晶，其径向全平面为无缺陷区域，其中拉拔条件发生变化拉伸单晶时的晶体生长轴的方向，使得拉伸速度的余量总是预先确定的值以上，使得整个平面在径向方向上的单晶是无缺陷区域。因此，可以提供一种单晶的制造方法，其中当通过CZ法制造单晶时，其整个平面在径向方向上的无缺陷区域的单晶完全在晶体的方向上生长轴可以稳定地生产。

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