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171. 发明授权

US06836357B2 Semiconductor optical amplifier using laser cavity energy to amplify signal and method of fabrication thereof 失效
标题翻译：使用激光腔能量放大信号的半导体光放大器及其制造方法
公开(公告)号：US06836357B2
公开(公告)日：2004-12-28
申请号：US10006435
申请日：2001-12-04
申请人： Shih-Yuan Wang , Miao Zhu , Zuhua Zhu , Haiqing Wei , Saif M. Islam
发明人： Shih-Yuan Wang , Miao Zhu , Zuhua Zhu , Haiqing Wei , Saif M. Islam
IPC分类号： H01S300
CPC分类号： B82Y20/00 , H01S5/3413 , H01S5/50 , H01S5/5027 , H01S5/5063 , H01S5/5072 , H01S2301/02
摘要： A semiconductor optical amplifier (SOA) apparatus and related methods are described. The SOA comprises a signal waveguide for guiding an optical signal along a signal path, and further comprises one or more laser cavities having a gain medium lying outside the signal waveguide, the gain medium being sufficiently close to the signal waveguide such that, when the gain medium is pumped with an excitation current, the optical signal traveling down the signal waveguide is amplified by an evanescent coupling effect with the laser cavity. When the gain medium is sufficiently pumped to cause lasing action in the laser cavity, gain-clamped amplification of the optical signal is achieved. Additional features relating to segmented laser cavities, separate pumping of laser cavity segments, DFB/DBR gratings, current profiling to improve ASE noise performance, coupled-cavity lasers, avoidance of injection locking effects, manipulation of gain curve peaks, integration with a tunable vertical cavity coupler, integration with a photodetector, integration with an RZ signal modulator, and other described features may be used with the evanescent coupling case or with an SOA having a laser cavity gain medium that is coextensive with the gain medium of the signal waveguide.
摘要翻译：描述了一种半导体光放大器（SOA）装置及相关方法。 SOA包括用于沿着信号路径引导光信号的信号波导，并且还包括一个或多个具有位于信号波导外部的增益介质的激光腔，增益介质足够靠近信号波导，使得当增益介质用激励电流泵浦，沿信号波导下行的光信号通过与激光腔的ev逝耦合效应放大。当增益介质被充分泵送以在激光腔中引起激光作用时，实现光信号的增益钳位放大。与分段激光腔相关的附加特征，激光腔段的独立泵浦，DFB / DBR光栅，电流分析以改善ASE噪声性能，耦合腔激光器，避免注入锁定效应，操纵增益曲线峰值，与可调谐垂直线空腔耦合器，与光电检测器的集成，与RZ信号调制器的集成以及其它所描述的特征可以与ev逝耦合壳体或具有与信号波导的增益介质共同延伸的激光腔增益介质的SOA一起使用。

172. 发明授权

US06429466B2 Integrated circuit substrate that accommodates lattice mismatch stress 有权
标题翻译：集成电路基板，适应晶格失配应力
公开(公告)号：US06429466B2
公开(公告)日：2002-08-06
申请号：US09774199
申请日：2001-01-29
申请人： Yong Chen , Scott W. Corzine , Theodore I. Kamins , Michael J. Ludowise , Pierre H. Mertz , Shih-Yuan Wang
发明人： Yong Chen , Scott W. Corzine , Theodore I. Kamins , Michael J. Ludowise , Pierre H. Mertz , Shih-Yuan Wang
IPC分类号： H01L31072
CPC分类号： H01L21/7624 , H01L21/02381 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02538 , H01L21/0254 , H01L21/02658 , H01L21/26533
摘要： A method for growing a crystalline layer that includes a first material on a growth surface of a crystalline substrate of a second material, wherein the first material and the second material have different lattice constants. A buried layer is generated in the substrate such that the buried layer isolates a layer of the substrate that includes the growth surface from the remainder of the substrate. The second material is then deposited on the growth surface at a growth temperature. The isolated layer of the substrate has a thickness that is less than the thickness at which defects are caused in the crystalline lattice of the first material by the second material crystallizing thereon. The buried layer is sufficiently malleable at the growth temperature to allow the deformation of the lattice of the isolated layer without deforming the remainder of the substrate. The present invention may be utilized for growing III-V semiconducting material layers on silicon substrates. In the case of silicon-based substrates, the buried layer is preferably SiO2 that is sufficiently malleable at the growth temperature to allow the deformation of the isolated substrate layer.
摘要翻译：一种用于生长晶体层的方法，其包括在第二材料的晶体衬底的生长表面上的第一材料，其中第一材料和第二材料具有不同的晶格常数。在衬底中产生掩埋层，使得掩埋层将衬底的包含生长表面的衬底与衬底的其余部分隔离。然后将第二种材料在生长温度下沉积在生长表面上。衬底的隔离层的厚度小于在其上结晶第二材料时在第一材料的晶格中产生缺陷的厚度。掩埋层在生长温度下具有足够的延展性，以允许隔离层的晶格变形，而不使基底的其余部分变形。本发明可用于在硅衬底上生长III-V半导体材料层。在硅基基板的情况下，掩埋层优选是在生长温度下足够有韧性的SiO 2，以允许隔离的基底层的变形。

173. 发明授权

US06327288B1 Buried heterostructure for lasers and light emitting diodes 失效
标题翻译：用于激光器和发光二极管的埋入异质结构
公开(公告)号：US06327288B1
公开(公告)日：2001-12-04
申请号：US09263654
申请日：1999-03-05
申请人： Shih-Yuan Wang , Yong Chen
发明人： Shih-Yuan Wang , Yong Chen
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/2232 , H01S5/227 , H01S5/32341 , H01S5/34333 , H01S2304/00 , H01S2304/04 , H01S2304/12
摘要： A laser diode that is constructed in a trench in a manner such that the material in the trench acts as a waveguide. The laser diode includes a first contact layer constructed from a first semiconducting material of a first carrier type, the first semiconducting material having a first index of refraction. The first contact layer has a trench therein. The trench has a layer of a second semiconducting material of the first carrier type on the bottom surface. The index of refraction of the second semiconducting material is at least one percent greater than the index of refraction of the first semiconducting material. The laser also includes a first dielectric layer covering the first layer in those regions outside of the trench and a first cladding layer constructed from a third semiconducting material of the first carrier type. The first cladding layer overlies the dielectric layer. An active layer overlies the first cladding layer. A second cladding layer constructed from a fourth semiconducting material of the opposite carrier type from the first carrier type overlies the active layer. A second contact layer of a fifth semiconducting material of the opposite carrier type from the first carrier type overlies the second cladding layer. The invention is particularly well suited for constructing laser diodes based on group III-V material systems such as GaN.
摘要翻译：一种激光二极管，其以沟槽中的材料作为波导的方式构造在沟槽中。激光二极管包括由第一载体类型的第一半导体材料构成的第一接触层，第一半导体材料具有第一折射率。第一接触层在其中具有沟槽。沟槽在底表面上具有第一载体类型的第二半导体材料层。第二半导体材料的折射率比第一半导体材料的折射率大至少一个百分点。激光器还包括覆盖在沟槽外的那些区域中的第一层的第一介电层和由第一载流子类型的第三半导体材料构成的第一覆层。第一包覆层覆盖在电介质层上。有源层覆盖在第一覆层上。由与第一载体类型相反的载体类型的第四半导体材料构成的第二覆层覆盖有源层。与第一载体类型相反的载体类型的第五半导体材料的第二接触层覆盖第二覆层。本发明特别适用于构建基于III-V族材料体系的诸如GaN的激光二极管。

174. 发明授权

US5892787A N-drive, p-common light-emitting devices fabricated on an n-type substrate and method of making same 失效
标题翻译：在n型衬底上制造的N驱动p普通发光器件及其制造方法
公开(公告)号：US5892787A
公开(公告)日：1999-04-06
申请号：US635838
申请日：1996-04-22
申请人： Michael R. T. Tan , Albert T. Yuen , Shih-Yuan Wang , Ghulam Hasnain , Yu-Min Houng
发明人： Michael R. T. Tan , Albert T. Yuen , Shih-Yuan Wang , Ghulam Hasnain , Yu-Min Houng
IPC分类号： H01S5/00 , H01L33/00 , H01L33/30 , H01S5/042 , H01S5/183 , H01S5/30 , H01S5/42 , H01S3/19
CPC分类号： H01L33/30 , H01L33/0016 , H01L33/0062 , H01S5/18308 , H01S5/0207 , H01S5/0421 , H01S5/18305 , H01S5/2059 , H01S5/2063 , H01S5/3054 , H01S5/3095 , H01S5/423
摘要： A substantially n-type substrate structure having a p-type surface for use in semiconductor devices as a substitute for a p-type semiconductor substrate. The substrate structure comprises a substrate region and a buffer region. The substrate region is a region of n-type compound semiconductor, and includes a degeneratively n-doped portion adjacent its first surface. The buffer region is a region of compound semiconductor doped with a p-type dopant. The buffer region is located on the first surface of the substrate region and includes a surface remote from the substrate region that provides the p-type surface of the substrate structure. The buffer region also includes a degeneratively p-doped portion adjacent the degeneratively n-doped portion of the substrate region. The substrate structure includes a tunnel junction between the degeneratively n-doped portion of the substrate region and the degeneratively p-doped portion of the buffer region. The substrate structure is made by degeneratively doping a substrate region of n-type compound semiconductor material adjacent its first surface with an n-type impurity, and depositing a layer of compound semiconductor material doped with a p-type impurity on the first surface of the substrate region to form a buffer region that includes a surface remote from the substrate region. In the course of depositing the compound semiconductor material to form the buffer region, the compound semiconductor material is degeneratively doped with the p-type impurity at least in a portion adjacent the substrate region to form a tunnel junction between the substrate region and the buffer region.
摘要翻译：具有用于半导体器件的p型表面作为p型半导体衬底的替代物的基本为n型衬底结构。衬底结构包括衬底区域和缓冲区域。衬底区域是n型化合物半导体的区域，并且包括与其第一表面相邻的退化的n-掺杂部分。缓冲区是掺杂有p型掺杂剂的化合物半导体的区域。缓冲区域位于衬底区域的第一表面上并且包括远离衬底区域的表面，该表面提供衬底结构的p型表面。缓冲区还包括与衬底区域的退化的n掺杂部分相邻的退化的p掺杂部分。衬底结构包括在衬底区域的退化的n掺杂部分和缓冲区域的退化的p掺杂部分之间的隧道结。衬底结构是通过用n型杂质将邻近其第一表面的n型化合物半导体材料的衬底区域简单地掺杂制成的，并且在第一表面上沉积掺杂有p型杂质的化合物半导体材料层衬底区域以形成包括远离衬底区域的表面的缓冲区域。在沉积化合物半导体材料以形成缓冲区的过程中，化合物半导体材料至少在与衬底区域相邻的部分中被p型杂质退变掺杂以在衬底区域和缓冲区域之间形成隧道结。

175. 发明授权

US5266503A Method of making a surface emitting laser with oxygen ion implants followed by epitaxial regrowth 失效
标题翻译：用氧离子注入制造表面发射激光，然后进行外延再生的方法
公开(公告)号：US5266503A
公开(公告)日：1993-11-30
申请号：US771069
申请日：1991-10-02
申请人： Shih-Yuan Wang , Michael R. T. Tan
发明人： Shih-Yuan Wang , Michael R. T. Tan
IPC分类号： H01L21/76 , H01L33/00 , H01S5/183 , H01S5/20 , H01S5/223 , H01S5/24 , H01S5/343
CPC分类号： B82Y20/00 , H01L21/7605 , H01L33/0062 , H01S5/0207 , H01S5/18308 , H01S5/18305 , H01S5/2063 , H01S5/2234 , H01S5/24 , H01S5/3432 , Y10S148/095
摘要： A surface emitting laser diode device is disclosed where an active layer is implanted with oxygen ions except for a small active region. The active region includes a pn junction for generating radiation in response to passage of electrical current therethrough. After the oxygen implantation, mirror layers are grown on top of the active layer to reflect light generated in the active region back into the active region to induce more radiation emission. Mirror layers are also provided underneath the active region for the same purpose. Contact layers are provided on the top and bottom of the structure just described so that when an electrical potential is applied between the two contacts, electrical current will flow between the contacts between the active region for generating radiation. The oxygen-implanted isolation region surrounds the active region in order to confine current flow to the active region.
摘要翻译：公开了一种表面发射激光二极管器件，其中除了小的有源区域之外，用氧离子注入有源层。有源区包括用于响应电流通过其中的辐射而产生辐射的pn结。在氧注入之后，镜层生长在有源层的顶部上，以将在有源区中产生的光反射回有源区，以引起更多的辐射发射。为了相同的目的，镜面层也设置在活动区域的下方。接触层设置在刚刚描述的结构的顶部和底部，使得当在两个触点之间施加电势时，电流将在用于产生辐射的有源区域之间的触点之间流动。氧注入的隔离区围绕有源区域，以限制电流流向有源区。

176. 发明授权

US09515262B2 Resistive random-access memory with implanted and radiated channels 有权
标题翻译：具有植入和辐射通道的电阻式随机存取存储器
公开(公告)号：US09515262B2
公开(公告)日：2016-12-06
申请号：US14829327
申请日：2015-08-18
申请人： Shih-Yuan Wang , Shih-Ping Wang
发明人： Shih-Yuan Wang , Shih-Ping Wang
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L27/2409 , H01L27/2481 , H01L27/249 , H01L45/06 , H01L45/08 , H01L45/1226 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/146 , H01L45/1608 , H01L45/1633 , H01L45/165
摘要： Resistive RAM (RRAM) devices having increased uniformity and related manufacturing methods are described. Greater uniformity of performance across an entire chip that includes larger numbers of RRAM cells can be achieved by uniformly creating enhanced channels in the switching layers through the use of radiation damage. The radiation, according to various described embodiments, can be in the form of ions, electromagnetic photons, neutral particles, electrons, and ultrasound.
摘要翻译：描述具有增加的均匀性和相关制造方法的电阻RAM（RRAM）装置。通过使用辐射损伤在开关层中均匀地产生增强的通道，可以实现包括更大数量的RRAM单元的整个芯片的更高的性能均匀性。根据各种描述的实施例，辐射可以是离子，电磁光子，中性粒子，电子和超声波的形式。

177. 发明授权

US08687186B2 Nanowire-based systems for performing raman spectroscopy 有权
标题翻译：用于执行拉曼光谱的基于纳米线的系统
公开(公告)号：US08687186B2
公开(公告)日：2014-04-01
申请号：US13383387
申请日：2009-07-30
申请人： Shih-Yuan Wang , Jingjing Li , Huei Pei Kuo , David A. Fattal , Nobuhiko Kobayashi , Zhiyong Li
发明人： Shih-Yuan Wang , Jingjing Li , Huei Pei Kuo , David A. Fattal , Nobuhiko Kobayashi , Zhiyong Li
IPC分类号： G01J3/44
CPC分类号： G01N21/658 , B82Y15/00 , G01J3/44
摘要： Embodiments of the present invention are directed to nanowire-based systems for performing surface-enhanced Raman spectroscopy. In one embodiment, a system comprises a substrate having a surface and a plurality of tapered nanowires disposed on the surface. Each nanowire has a tapered end directed away from the surface. The system also includes a plurality of nanoparticles disposed near the tapered end of each nanowire. When each nanowire is illuminated with light of a pump wavelength, Raman excitation light is emitted from the tapered end of the nanowire to interact with the nanoparticles and produce enhanced Raman scattered light from molecules located in close proximity to the nanoparticles.
摘要翻译：本发明的实施方案涉及用于进行表面增强拉曼光谱的基于纳米线的系统。在一个实施例中，系统包括具有设置在表面上的表面和多个锥形纳米线的基板。每个纳米线具有远离表面的锥形端。该系统还包括设置在每个纳米线的锥形端附近的多个纳米颗粒。当每个纳米线被泵浦波长的光照射时，拉曼激发光从纳米线的锥形端发射以与纳米颗粒相互作用，并从位于紧邻纳米颗粒的分子产生增强的拉曼散射光。

178. 发明授权

US08547727B2 Memristive device 有权
标题翻译：忆阻器
公开(公告)号：US08547727B2
公开(公告)日：2013-10-01
申请号：US13119932
申请日：2008-12-12
申请人： Wei Wu , John Paul Strachan , R. Stanley Williams , Marco Florentino , Shih-Yuan Wang , Nathaniel J. Quitoriano , Hans S. Cho , Julien Borghetti , Sagi Varghese Mathai
发明人： Wei Wu , John Paul Strachan , R. Stanley Williams , Marco Florentino , Shih-Yuan Wang , Nathaniel J. Quitoriano , Hans S. Cho , Julien Borghetti , Sagi Varghese Mathai
IPC分类号： G11C11/00
CPC分类号： H01L45/145 , H01L27/2472 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/14 , H01L45/146 , H01L45/147
摘要： A memristive routing device includes a memristive matrix, mobile dopants moving with the memristive matrix in response to programming electrical fields and remaining stable within the memristive matrix in the absence of the programming electrical fields; and at least three electrodes surrounding the memristive matrix. A method for tuning electrical circuits with a memristive device includes measuring a circuit characteristic and applying a programming voltage to the memristive device which causes motion of dopants within the memristive device to alter the circuit characteristic. A method for increasing a switching speed of a memristive device includes drawing dopants from two geometrically separated locations into close proximity to form two conductive regions and then switching the memristive device to a conductive state by applying a programming voltage which rapidly merges the two conductive regions to form a conductive pathway between a source electrode and a drain electrode.
摘要翻译：忆阻路由设备包括忆阻矩阵，响应于编程电场而与忆阻矩阵一起移动的移动掺杂物，并且在没有编程电场的情况下在忆阻矩阵内保持稳定; 以及围绕忆阻矩阵的至少三个电极。一种用忆阻器件调谐电路的方法包括测量电路特性并将编程电压施加到忆阻器件，其使得忆阻器件内的掺杂剂的运动改变电路特性。用于增加忆阻器件的切换速度的方法包括将来自两个几何分离位置的掺杂剂绘制成紧密接近形成两个导电区域，然后通过施加快速合并两个导电区域的编程电压将忆阻器件切换到导通状态在源电极和漏电极之间形成导电路径。

179. 发明授权

US08546898B2 Optoelectronic light exposure memory 有权
标题翻译：光电曝光记忆体
公开(公告)号：US08546898B2
公开(公告)日：2013-10-01
申请号：US13259196
申请日：2009-09-29
申请人： Lars Thylen , Alexandre Bratkovski , Shih-Yuan Wang , R. Stanley Williams
发明人： Lars Thylen , Alexandre Bratkovski , Shih-Yuan Wang , R. Stanley Williams
IPC分类号： H01L27/14 , G11C19/08 , G11C17/06 , G11C11/00
CPC分类号： H01L27/14609 , G11C7/005 , G11C13/0007 , G11C13/0014 , G11C13/047 , G11C2213/55 , G11C2213/56 , G11C2213/77 , H01L27/14621 , H01L27/307
摘要： An optoelectronic memory cell has a transparent top electrode, a photoactive layer, a latching layer, and a bottom electrode. The photoactive layer absorbs photons transmitted through the top electrode and generates charge carriers. During light exposure, the latching layer changes its resistance under an applied electric field in response to the generation of charge carriers in the photoactive layer.
摘要翻译：光电存储单元具有透明的顶电极，光敏层，闭锁层和底电极。光活性层吸收通过顶部电极传输的光子并产生电荷载体。在曝光期间，响应于光活性层中的电荷载体的产生，锁存层在施加的电场下改变其电阻。

180. 发明授权

US08519372B2 Electroforming-free nanoscale switching device 有权
标题翻译：无电成形纳米级开关器件
公开(公告)号：US08519372B2
公开(公告)日：2013-08-27
申请号：US13259173
申请日：2009-07-30
申请人： Jianhua Yang , Shih-Yuan Wang , R. Stanley Williams , Alexandre Bratkovski , Gilberto Ribeiro
发明人： Jianhua Yang , Shih-Yuan Wang , R. Stanley Williams , Alexandre Bratkovski , Gilberto Ribeiro
IPC分类号： H01L29/02
CPC分类号： H01L29/417 , B82Y10/00 , H01L27/101 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146
摘要： A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching material capable of transporting dopants under an electric field, and at least one conductive layer formed of a dopant source material containing dopants that can drift into the switching layer under an electric field. The switching layer has a thickness about 6 nm or less.
摘要翻译：构造纳米级开关器件，使得不需要电铸工艺来调节器件以进行正常的开关操作。开关装置具有设置在两个电极之间的有源区域。有源区具有由能够在电场下输送掺杂剂的开关材料形成的至少一个开关层，以及由掺杂剂源材料形成的至少一个导电层，所述掺杂剂源材料含有可在电场下漂移到开关层中的掺杂剂。开关层的厚度为6nm以下。

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